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・Symp. E9: "ULSI Process Integration 7",
220th Meeting of the Electrochem. Soc. Oct. 10-13, 2011 Boston, USA ・7th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-7) Aug. 28 - Sep. 2, 2011 Leuven, Belgium (Rescheduled) ・3rd Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT) June 26 - July 1, 2011 Hong Kong, China ・Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010) Nov. 1-4, 2010 Shanghai, China ・4th SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symp., 218th Meeting of the Electrochem. Soc. Oct. 10-15, 2010 Las Vegas, Nevada, USA ・Int. Symp. on Technology Evolution for Silicon Nano-Electronics (ISTESNE) Jun. 3-5, 2010 Tokyo, Japan ・5th Int. SiGe Technology and Device Meeting (ISTDM2010) May 24-26, 2010 Stockholm, Sweden ・5th Int. Workshop on New Group IV Semiconductor Nanoelectronics (RIEC Int. Symp.) Jan. 28-30, 2010 Tohoku Univ., Sendai, JAPAN ・Symp. E10: "ULSI Process Integration 6", 216th Meeting of the Electrochem. Soc. Oct. 4-9, 2009 Vienna, Austria ・1st Int. Workshop on Si based nano-electronics and -photonics (SiNEP-09) Sep. 20-23, 2009 Univ. Vigo, Spain ・2nd Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT) July 5-10, 2009 Xi'an, China ・6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6) May 17-22, 2009 Los Angeles, USA ・Symp. Z: “Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Materials Research Society - Int. Conf. in Asia 2008 (IUMRS-ICA 2008) Dec. 9-13, 2008 Nagoya, Japan ・3rd ECS Int. SiGe & Ge Symp Oct. 12-17, 2008, Hawaii, USA ・4th Int. Workshop on New Group IV Semiconductor Nanoelectronics Sep. 25-27, 2008 Tohoku Univ., Sendai, JAPAN ・4th Int. SiGe Technology and Device Meeting (ISTDM2008) May 11-14, 2008 Hsinchu, Taiwan ・3rd Int. WorkShop on New Group IV Semiconductor Nanoelectronics November 8(Thu.) - 9(Fri.), 2007 Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, SENDAI, JAPAN ・5th Int. Symp. on Control of Semiconductor Interfaces November 12(Mon.)-14(Wed.), 2007 Tokyo Metropolitan University, Hachioji, Tokyo, Japan ・Symp. E9: "ULSI Process Integration 5", 212th Meeting of the Electrochem. Soc. Oct. 7-12, 2007 Washington, DC, USA ・5th Int. Conf. on Silicon Epitaxy and Heterostructures May 20(Sat.)-24(Thu.), 2007, Marseille, France ・2006 Joint Int. Meeting, 210th Meeting of The Electrochemical Society, Inc. SiGe & Ge Materials, Processing, and Devices Symposium October 29(Sat)-November 3(Fri), 2006, Moon Palace Resort, Cancun, Mexico ・2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics Oct. 2(Mon.) - 3(Tue.), 2006, Tohoku University, Sendai, Japan ・3rd Int. SiGe Technology and Device Meeting (ISTDM2006) May 15(Mon)-17(Wed), 2006, Princeton University, New Jersey, USA ・The E-MRS 2006 Spring Meeting Symposium L : Characterization of High-K Dielectric Materials May 29(Mon)-June 2(Fri), 2006, Nice, France ・1st Int. Workshop on New Group IV Semiconductor Nanoelectronics May 27(Fri)-28(Sat), 2005, Tohoku University, Sendai, Japan ・Silicon Epitaxy and Heterostructures ICSI-4 (Fourth Int. Conf.) Homepage May 23(Mon)-26(Thu), 2005, Awaji Island, Hyogo, Japan ・Third Int. SiGe(C) Workshop Homepage October 12(Tue)-13(Wed), 2004, Laboratory for Nanoelectronics and Spintronics Research Institute of Electrical Communication Tohoku University, Sendai, Japan ・SiGe Materials Processing and Device (The Electrochemical Society 206th Meeting) Homepage October 3(Sun)-8(Fri), 2004, Honolulu, Hawaii, USA ・Second ISTDM (Int. SiGe Technol. and Device
Meeting) Homepage
May 16(Sun)-19(Wed), 2004, Frankfurt/Oder, Germany ・First ISTDM (Int. SiGe Technol. and Device
Meeting) Homepage
January 15(Wed)-17(Fri), 2003, NAGOYA, JAPAN ・Second SiGe(C) Workshop Homepage
June 2(Sun)-4(Tue), 2002, BELLCLASSIC KOFU, Yamanashi, JAPAN ・First SiGe(C) Workshop Homepage
January 21(Sun)-23(Tue), 2001, HOTEL JAL CITY SENDAI, JAPAN ・IJC-Si (Int. Joint Conf. of Silicon Epitaxy
and Heterostructures)
September 12 (Sun)-17(Fri), 1999, Miyagi-Zao Royal Hotel, Miyagi, Japan |