FIRST INTERNATIONAL
SiGe Technology and Device Meeting
(From Materials and Process Technology to Device and Circuit Technology)
Nagoya University Symposion, Nagoya, Japan
January 15-17, 2003


http://www.murota.riec.tohoku.ac.jp/ISTDM2003Jan

>>> "ISTDM 2003 Call for Paper"(.pdf, about 220KB) <<<

What's New
- "ABSTRACT" & "PROCEEDINGS" are updated.
- "Numbers of Participants and Paper Presentaions" is uploaded.
in "PARTICIPANT" on Jan. 27, 2003.

 

PARTICIPANT

updated on Jan. 27
  IMPORTANT SCHEDULES updated on Nov. 20
  PREFACE  
  PROGRAM updated on Dec. 18
  PRESENTATION updated on Dec. 12
  ABSTRACTS updated on Feb. 21
  PROCEEDINGS updated on Feb. 21
  REGISTRATION  
............................ LOCATION & TRANSPORTATION updated on Dec. 7
  ACCOMMODATION  
  BANQUET  
  CORRESPONDENCE  
  COMITTEE MEMBERS  

 

PARTICIPANT

"Numbers of Participants and Paper Presentaions" (pdf File)

 

IMPORTANT SCHEDULES

Abstract Deadline: September 30, 2002
Extended to
October 10, 2002
Scheduled Paper
(Number)
Total
Time
Talk/Discussion
Time
Proceeding pages printed
in Appl. Surf. Sci
Plenary (2) 35min 30min/5min 8 pages/paper
Invited (17) 25min 20min/5min 6 pages/paper
Contributed (116) Regular 15min 12min/3min 4 pages/paper
Short 4min 3min/
(1min-Alternation)
Notification of
Abstract Acceptance:
November middle, 2002

Advanced Program:

December 18, 2002

Advanced Registration:

December 10, 2002

Late News Deadline: December 10, 2002

Proceedings
Manuscript Deadline:

(ONE ORIGINAL and
THREE COPIES)

End of the Lunch Time on January 15, 2003
for
Submission at the Publication Office by one of the authors

and
Additional Sending by E-mail
(Note: Both of them are necessary!)

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PREFACE

The first International SiGe Technology and Device Meeting (ISTDM) will be held in Nagoya, Japan, on January 15-17, 2003. This meeting will provide a forum for reviewing and discussing all technological aspects from materials and process technologies to device and circuit technologies for SiGe(C) semiconductor. The meeting will consist of both invited and contributed papers. Contributed papers are solicited in the following areas;

Technical Area

1. Materials in Si-Ge-(C) System: SiGe wafer fabrication; Strained or Strain-relaxed Si, Ge, SiGe(C) or Si:C formation; Novel growth technique; Si, Ge and SiGe(C) quantum wire/dot formation; Defect-controlled buffer layer growth; Defect engineering and characterization.

2. Process Technology: Gate, source/drain and channel engineering; SiGe(C) and Si:C epitaxy; Polycrystalline/ amorphous SiGe(C) and Si:C deposition; Cleaning and treatment of SiGe(C) surface; Impurity doping; Impurity diffusion and diffusion suppression; Dry etching; Metal contact; Si/Ge intermixing control; Oxide and nitride on SiGe heterostructure; Ge and C contamination in Si process; Process characterization.

3. Device Technology: HBT; CMOS; BiCMOS; Hetero-FET over CMOS; RTD; Optical devices (emitters and receivers); Ultimate small device; High-speed devices; Low-voltage/low-power devices; SOI; SoC.

4. Circuit Technology: Analog; RF power amplifier; High-speed; Mixed-analog/digital; RF mobile communication; Wireline data-/tele-communication; Ubiquitous network.

On behalf of the Committees, it is our great pleasure to welcome you to the ISTDM Conference at Nagoya, Japan.

Yukio Yasuda (Nagoya University)
Chair of the Organizing Committee
for the 1st Meeting

Junichi Murota (Tohoku University)
Chair of the International Technical Program Committee
for the 1st Meeting

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PROGRAM

Time Table for Presentations and Advanced Program are distributed as follows.

Time Table for Presentations Advanced Program
MS Excel File (updated on Nov. 21)
PDF File (updated on Nov. 21)
MS Excel File (updated on Dec. 18)
PDF File (updated on Dec. 18)

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PRESENTATION

Information on Oral and Poster Presentation is distributed as follows.

Note: We need your cooperation to avoid time delay due to use of PC projector. Even if you use PC projector, please keep the printed materials on the OHP transparency sheets. In the case that problem happens at the computer-projector connection, the presentor should have presentation with use of conventional OHP projector.

Note: ISTDM2003 does not provide computers for the PC-projector Presentation.

Information on Oral Presentation Information on Poster Presentation
MS Word File
PDF File
MS Word File
PDF File

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ABSTRACTS

Issue of "ISTDM 2003 Program & Abstracts" is stocked. If you want to buy, please order to SiGe@murota.riec.tohoku.ac.jp and it will cost 7,500 Japanese Yen per book. Please understand the stocked number is limited.

Deadline : October 10, 2002

Late News Deadline : December 10, 2002

"Abstract Preparation Form"

MS WORD File

PDF File

Use of the above "Abstract Preparation Form" is strongly recommended to prepare your abstract.

ONE ORIGINAL and THREE COPIES of camera-ready two-page abstract with one page of text and one page of figures, written in English on white bond paper (A4 size; 2.5cm margin on four sides, use of Times New Roman Font and Single Spacing is recommended) should be submitted by December 10, 2002 to the following address. Abstract submission as E-MAIL-ATTACHED WORD-file or PDF-file is also available.

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Abstract Submission Address Prof. Junichi Murota
Research Institute of Electrical Communication, Tohoku University
Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan.
E-Mail:
SiGe@murota.riec.tohoku.ac.jp.

The abstract text (in normal 12-point font) should be headed by the Title (in bold 14-point font), Author(s), Affiliation(s), Address, Telephone number, Fax number and E-mail address (in normal 12-point font), and clearly describes the new contributions of the work.

The submission notification included Title, Author(s), Affiliation(s), Address, Telephone number, Fax number and E-mail address should be also sent by E-mail.

Papers to be presented at the meeting will be selected by the Program Committee based on the submitted abstracts. The notice of acceptance and the advanced program will be e-mailed to one of the authors by the middle of November 2002.

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PROCEEDINGS

Issue of the ISTDM 2003 Proceedings will be published in a special issue of Applied Surface Science.
The publication schedule will be updated here.

Receiptance of manuscripts for the Proceedings was finished on Jan. 15, 2003.
The manuscripts are now in 2nd reviewing procedure.

"Guide for Preparation of Manuscript" is now distributed. --> <MS Word File> <PDF File>

ONE ORIGINAL and THREE COPIES of the manuscript should be submitted to the PUBLICATION OFFICE by one of the authors until the END OF THE LUNCH TIME ON JANUARY 15, 2003 (the first day of the ISTDM2003). Any manuscript that is not submitted by one of the authors until the deadline will not be included in the Proceedings. IN ADDITION, in order to perform rapid editorial works in publication, the manuscript SHOULD BE SENT BY E-MAIL to SiGe@riec.tohoku.ac.jp until January 15, 2003.

All manuscripts will be reviewed with normal refereeing procedures during the ISTDM.

Number of the pages printed on Applied Surface Science is assigned as follows:

Plenary Paper : 8 pages/paper
Invited Paper : 6 pages/paper
Contributed Paper : 4 pages/paper

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REGISTRATION

 

Registration Fee

Banquet Fee

before Dec. 10, 2002

after Dec. 10, 2002

Regular

25,000 Japanese yen

30,000 Japanese yen

5,000 Japanese yen

Student

12,000 Japanese yen

15,000 Japanese yen

5,000 Japanese yen

Accompanying
Person

------

3,000 Japanese yen

Your completed registration form should be sent to Prof. Y. Yasuda for advanced registration. Payment must be made in Japanese yen by bank transfer or credit card. If paying by bank transfer, please pay your bank commission charge and send a copy of your receipt together with the registration form. Accepted credit cards are VISA, Master, American Express, JCB, UFJ, and Million. Personal checks and bank checks are NOT ACCEPTABLE.

"Registration Form" (MS WORD File) Bank Transfer (Please pay your bank commission charge.)
Account Name: ISTDM2003 Yukio Yasuda
Account Number: 4581507
Bank: UFJ Bank, Hoshigaoka Branch
14-14 Hoshigaoka-Motomachi, Chikusa-ku, Nagoya 464-0802, Japan
"Registration Form" (PDF File)

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LOCATION & TRANSPORTATION

Meeting Site:
Nagoya University Symposion, Furo-cho, Chikusa-ku, Nagoya, Japan

Transportation
(for Screen-Preview)

Hotel Map
(for Screen-Preview)

Meeting Site Map
(for Screen-Preview)

Motoyama Station
Exit Map
(for Screen-Preview)

Map & Transportation
(MS WORD File for Print, ~240kB)

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ACCOMMODATION

JTB Corp. has been appointed as the official travel agent for the meeting and will handle accommodations.

JTB Convention Support Center (c/o JTB Event & Convention Service)
"ISTDM" DESK

Koutsu Bldg.6F, 3-13-26 Meieki, Nakamura-ku,Nagoya,450-0002 JAPAN
Phone:(81)52-541-2521, Fax:(81)52-541-2520, E-mail:
jtbecs@cjn.or.jp

Detail Informations about Hotel Reservation are described in the following "Hotel Infomation".

"Hotel Information" MS WORD File / PDF File
"Hotel Application Form" MS WORD File / PDF File

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  1. Participants wishing to make reservations for accommodations should complete the above "Hotel Application Form" and return it to JTB no later than December 25, 2002. Applications for hotel accommodations should be accompanied by a deposit of one night room charge plus a handling charge of 500 Japanese Yen per one room in advance. Please pay for the balance when checking out the hotel.

  2. Payments must be made by either one of the following:

NOTE: Personal checks are not acceptable. We would appreciate your kindly sending us a photo-copy of the bank's receipt for your remittance.

CANCELLATION: If you decided to make any changes or cancellations, please inform JTB by FAX or E-mail. JTB accept only written notification. The cancellation fees apply according to the date of your notification.

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BANQUET

A banquet will be held on January 15, 2003. Please make your reservation by using the attached registration form. Tickets can also be purchased at the registration desk.

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CORRESPONDENCE

For further information, please contact to:

Prof. Junichi Murota,
Chair of the International Technical Program Committee,
Research Institute of Electrical Communication, Tohoku University
2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan
Tel.&Fax: +81-22-217-5548
E-mail:SiGe@murota.riec.tohoku.ac.jp
URL: http://www.murota.riec.tohoku.ac.jp/ISTDM2003Jan

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COMITTEE MEMBERS

 

INTERNATIONAL ADVISORY COMMITTEE

P. Ashburn (Southampton Univ., UK)
M.R. Caymax (IMEC, Belgium)
S.-J. Chang (National Cheng Kung Univ., Taiwan)
J. Derrien (CRMC2-CNRS, France)
J. Eymery (CEA DRFMC, France)

D. Gruetzmacher (PSI, Switzerland)
J.L. Hoyt (MIT, USA)
E. Kasper (Stuttgart Univ., Germany)
J. Murota (Tohoku Univ., Japan)
A. Ourmazd (IHP, Germany)

Y. Shiraki (Univ. Tokyo, Japan)
J.C. Sturm (Princeton Univ., USA)
B. Tillack (IHP, Germany)
Y. Yasuda (Nagoya Univ., Japan)
S. Zaima (Nagoya Univ., Japan)

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INTERNATIONAL TECHNICAL PROGRAM COMMITTEE

J. Murota (Chair, Tohoku Univ., Japan)
B. Tillack (Vice Chair, IHP, Germany)
J.C. Sturm (Vice Chair, Princeton Univ., USA)
M.R. Caymax (Publication; IMEC, Belgium)
T. Abe (Shin-Etsu Handotai, Japan)
W. Arden (Infineon, Germany)
J. Arndt (Atmel, Germany)
S. Banerjee (Univ. Texas at Austin, USA)
D. Bouchier (UMR CNRS, France)
M. Carroll (USA)
A. Chantre (STMicroelectronics, France)
S.-C. Chen (TSMC, Taiwan)
J.D. Cressler (Georgia Inst. Tech., USA)
M. Currie (AmberWave Systems, USA)
D. Dutartre (STMicroelectronics, France)
I. Eisele (Univ. Bundeswehr, Germany)
J.M. Hartmann (CEA LETI, France)
D. Houghton (Aixtron-Canada, Canada)
V. Ilderem (Motorola, USA)
H. von Kaenel (ETH Zurich, Switzerland)
T.-J. King (UC Berkeley, USA)
J. Kolodzey (Univ. Delaware, USA)
Y. Kunii (Hitachi Kokusai Electric, Japan)
H. Kurino (Tohoku Univ., Japan)
C.W. Liu (National Taiwan Univ., Taiwan)
B. Meinerzhagen (Univ. Bremen, Germany)
T. Mimura (Fujitsu Laboratories, Japan)
M. Miyao (Kyushu Univ., Japan)
M. Nakamae (Sumitomo Mitsubishi Silicon, Japan)
M. Nakamura (SONY, Japan)
J. Osten (Univ. Hannover, Germany)
R. Plana (LAAS-CNRS, France)
J. Ramm (Unaxis, Liechtenstein)
H.-M. Rein (Ruhr-Univ. Bochum, Germany)
F.M. Ross (IBM T.J. Watson Research Center, USA)
H. Ruecker (IHP, Germany)
J. Sakai (Anelva, Japan)
A. Samoilov (Applied Materials, USA)
K. Saraswat (Stanford Univ., USA)
S. Selberherr (Tech. Univ. Vienna, Austria)
D. Singh (IBM T.J. Watson Research Center, USA)
J.W. Slotboom (Philips, The Netherlands)
Y. Suda (Tokyo Univ. Agric. and Tech., Japan)
N. Suematsu (Mitsubishi Electric, Japan)
S. Takagi (Toshiba, Japan)
T. Takagi (Matsushita Electric, Japan)
T. Tatsumi (NEC, Japan)
H.C. Tseng (UMC, Taiwan)
T. Tsuchiya (Shimane Univ., Japan)
L. Vescan (Forschungszentrum Julich, Germany)
K. Washio (Hitachi, Japan)
J. Wen (ASM America, USA)
M. Willander (Chalmers Univ. Tech., Sweden)
Y.-H. Xie (UCLA, USA)
T. Yoshikawa (Matsushita Electric, Japan)
Y.-D. Zheng (Nanjing Univ., China)

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ORGANIZING COMMITTEE for the 1st Meeting STEERING COMMITTEE for the 1st Meeting
Y. Yasuda (Chair, Nagoya Univ., Japan)
Y. Shiraki (Vice Chair, Univ. Tokyo, Japan)
A. Ourmazd (Vice Chair, IHP, Germany)
J. Murota (Secretary, Tohoku Univ., Japan)
B. Tillack (Secretary, IHP, Germany)
S. Zaima (Secretary, Nagoya Univ., Japan)
S. Zaima (Chair, Nagoya Univ., Japan)
A. Sakai (Nagoya Univ., Japan)
M. Sakuraba (Tohoku Univ., Japan)
O. Nakatsuka (Nagoya Univ., Japan)
S. Takehiro (Tohoku Univ., Japan)

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