Third International WorkShop on 

New Group IV (Si-Ge-C)
  Semiconductors
Control of Properties
and
  Applications to
  Ultrahigh Speed and
Opto-Electronic Devices

　The Ministry of Education, Science,
Sports and Culture, Japan

and

Research Institute of Electrical Communication,
Tohoku University

ABSTRACT DEADLINE: September 10, 2004.

SCHEDULE
PROGRAM

SCOPE
SUBMISSION OF ABSTRACT
ORGANIZATION
WORKSHOP PRESENTATIONS
REGISTRATION
HOTEL ACCOMMODATION
CORRESPONDENCE
TRANSPORTATION
SCHEDULE
PROGRAM
LINK

     The Third International Workshop on New Group IV(Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop) will be held in Laboratory for Nanoelectronics and Spintronics, Tohoku-Univ., Sendai, Japan, on October 12-13, 2004.

     Recent rapid progress in Si-based heterostructures has opened up a possibility of the realization of ultrahigh speed and opto-electronic devices. In succession of the Second International Workshop on New Group IV(Si-Ge-C) Semiconductors held in 2002, this workshop will continue to promote the research project on the new group IV semiconductors .

-  Theoretical and Experimental Aspects on Homo-and Heteroepitaxial growth

-  Growth Mechanisms of Molecular Beam Epitaxy and Chemical Vapor Deposition

-  Formation and Properties of Self-Organized/Quantum-Confined Structures

-  Novel Growth Techniques

-  Electronic and Crystallographic Structures of Surfaces and Interfaces

-  Si-Ge and Si-Ge-C and other Group IV Materials

-  Silicides/Si(Ge, C) Heterostructures

-  Oxides and Nitrides/Si(Ge, C) Heterostructures

-  SiC and Diamond/Si Heterostructures

-  Nanoporous Si, Photo-and Electroluminescence in SiGe and other Group IV Materials

-  Rare Earth Atoms in Si

-  Electronic Device Applications of Si/Ge(C) Systems

-  Optical Device Applications of Si/Ge(C) Systems

-  Si-Based Light Emission and Detection

-  Relaxed Buffers, Compliant Substrates

-  Doping in Group IV Systems

-  Device Technology for Si-based group IV Systems

-  In-situ Characterization  

      ONE ORIGINAL and TWO COPIES of a one-page camera-ready abstract with one-page figures, written in English on white bond paper (A4 size; 2.5cm margin on four sides), should be submitted to the Program Chairman at the following address:

Prof. Junichi Murota

Program Committee Chairman, SiGe(C) 2004

Research Institute of Electrical Communication,

Tohoku University

2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan

Tel. & Fax.: +81-22-217-5548

e-mail: SiGe@murota.riec.tohoku.ac.jp

     The abstract should be headed by the title, author(s), affiliation(s), address, telephone number, fax number and e-mail address, and clearly describe the originality and new contributions of the work. The title, author(s), affiliation(s), address, telephone number, fax number and e-mail address should be also sent by E-mail to SiGe@murota.riec.tohoku.ac.jp

     Papers to be presented at the workshop will be selected by the Program Committee based on the submitted abstracts. The notice of acceptance will be e-mailed to the first author by September 15, 2004.

  ORGANIZING COMMITTEE

SCIENTIFIC PROGRAM COMMITTEE

INTERNATIONAL ADVISORY COMMITTE

WORKSHOP PRESENTATIONS

The Workshop registration desk will be open for;
12:00-18:00 on Tuesday, Oct. 12
8:30-15:00 on Wednesday, Oct. 13

Your completed registration form should be sent to Prof. J. Murota for advanced registration. Payment must be made in Japanese yen by bank transfer or credit card. If paying by bank transfer, please pay your bank commission charge and send a copy of your receipt together with the registration form. Accepted credit cards are VISA and MasterCard. Personal checks and bank checks are NOT ACCEPTABLE.  

BANQUET

A banquet will be held 18:45-20:45 on Tuesday, October 12, 2004. 

IMPORTANT DATES

Abstract Deadline	September 10, 2004
Notice of Acceptance	September 15, 2004
Pre-Registration	September 30, 2004

  CORRESPONDENCE

TRANSPORTATION

Sendai

Sendai is located 350 kilometers north of Tokyo on the pacific coast of Japan. Domestic flights to Sendai from Kansai and Nagoya airports are available but not from Narita. The JR Shinkansen Express (bullet train) connects major cities in Japan, and it takes only 2 hours from Tokyo to Sendai. The trip from Narita Airport to Sendai takes around 3.5 hours by Narita Express (a shuttle between the airport and Tokyo) and Shinkansen. From Kansai International Airport, it takes only 80 minutes by air. Sendai International Airport also services six regular international destinations including Hawaii and Hong Kong. From Sendai International Airport to JR Sendai Station West Bus Pool, a public shuttle bus runs frequently. For more details, visit the website of Sendai Convention Bureau: http://v-sendai.comminet.or.jp/~sendaicb/index_e.html

Via New Tokyo International Airport (Narita)

Participants arriving in New Tokyo International Airport (Narita Airport) have the following options for traveling to Sendai via Tokyo. Take either the JR Narita Express Train or a Limousine Bus to Tokyo Station. Narita Express is available at 30 minutes interval and it takes approximately 60 minutes from Narita to Tokyo Station at 2940 yen. Limousine Bus is available every 15 minutes and it takes 80 minutes at 3000 yen. Take the JR Shinkansen Express (bullet train) from Tokyo Station to Sendai. The train is available every 15 minutes and it takes 2 hours at 10,590 yen. See the JR Shinkansen Schedule. Also check the JR East website: http://www.jreast.co.jp/

Via Sendai International Airport

A shuttle bus service is available to the Sendai Station at 910 yen. Scheduled travel time: 40 minutes

Via Sendai Station

From Sendai station to Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku-Univ., it takes approximately 10 minutes on foot.

LINK

SiGe Materials Processing and Device (The Electrochemical Society 206th Meeting) Homepage
October 3(Sun) - 8(Fri), 2004, Honolulu, Hawaii ,USA

http://www.ecs2004sige.org/

Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) Homepage
May 23(Mon)-26(Thu), 2005, Awaji Island, Hyogo, Japan

http://edmain.ed.kyushu-u.ac.jp/~icsi4/