First International WorkShop
on
New Group IV (Si-Ge-C)
Semiconductors :
Control of Properties
and
Applications to
Ultrahigh Speed and
Opto-Electronic Devices
January 21(Sun.) - 23(Tue.),
2001
HOTEL JAL CITY SENDAI, JAPAN
Supported by
The Ministry of Education, Science,
Sports and Culture, Japan
and
RIEC,
Tohoku
University
PROGRAM
- Sunday, January 21
- Registration 17:30-20:30
- Reception 19:00-20:30
- Monday, January 22
- Introductory Talk 9:00-9:15
- Special Session I : System Application of SiGe(C) 9:15-10:45
- Session II : Electronic Devices & Fabrication (Short Presentation 3min x 17 Talks ) 11:00-11:51
- Special Session III : Process Technologies with SiGe(C) 14:00-16:00
- Session IV : Growth Technologies & Materials (Short Presentation 3min x 13 Talks ) 16:15-16:54
- Poster Session II & IV 17:00-18:30
- Banquet 18:45-20:45
- Tuesday, January 23
- Special Session V : SiGe(C) Heterostructure Substrates for High
Performance Devices 9:00-10:30
- Session VI : Optical Devices, Quantum Dots & Quantum Effects
(Short Presentation 3min x 26 Talks ) 10:45-12:03
- Poster Session VI : 13:30-15:00
- Special Session VII : Advanced Analysis & Future Devices
15:10-16:40
- Closing Remarks 16:40-16:50
