January 21(Sun.) - 23(Tue.),
2001
HOTEL JAL CITY SENDAI, JAPAN
Supported by
The Ministry of Education, Science,
Sports & Culture, Japan
and
RIEC,
Tohoku
University
PROGRAM
Time | ID No. | Title | Authors | Affiliation |
---|---|---|---|---|
9:00-9:30 | V-01 Invited |
Application of Strained-Si Films and Strained-Si-on-Insulator Structures to Advanced CMOS | S. Takagi, T. Mizuno, N. Sugiyama, T. Tezuka, T. Hatakeyama and A. Kurobe | Advanced LSI Technology Lab., Corporate Research & Development Center, Toshiba Corp., Japan |
9:30-10:00 | V-02 Invited |
High Ge Content SiGe MODFET Heterostructures on Virtual Substrates for Device Applications: HOLE MOBILITIES Higher than Electrons in the Room Temperature Range of Operation | O.A. Mironov, M. Myronov, E.H.C. Parker, T.E. Whall | Dept. of Physics, Univ. of Warwick., UK |
10:00-10:30 | V-03 Invited | SiGe Technology Reduced to Commercial Practice | D. C. Houghton, S. Kovacic H. Lafontaine and N Rowell* | SiGe Microsystems Inc, Canada * National Research Council, Canada |
Time | ID No. | Title | Authors | Affiliation |
---|---|---|---|---|
10:45-10:48 | VI-01 | SiGe/Si Heterojunction Light Emitting Devices for Efficient Excitation of Er Ions, | W.-X. Ni, C.-X. Du, A. Elfving, and G.V. Hansson | Dept. of Physics, Linköping Univ., Sweden |
10:48-10:51 | VI-02 | Electroluminescence Behavior of a Schottky-Type Asymmetric Si1-xGex/Si DQW Diode | Y. Suda, S. Kaechi, and T. Date | Fac. of Technology, Tokyo Univ. of Agriculture & Technology, Japan |
10:51-10:54 | VI-03 | Surface Diffusion Limited Nucleation of Ge Dots on the Si(001) Surface | Y. H. Wu, C. Y. Wang, Göran V. Hansson, and W.-X. Ni | Dept. of Physics, Linköping Univ., Sweden |
10:54-10:57 | VI-04 | Si1-yCy Alloys Used as Self-Patterned Templates for Alignment of Ge Dots | L. Simon, D. Aubel, G. Castelein*, M. Stoffel, J. L. Bischoff and L. Kubler | Lab. de Physique et de Spectroscopie Electronique CNRS-ESA 7014, Fac. des Sciences et Techniques, Univ. de Haute Alsace., France * Inst. de Chimie des Surface et Interface CNRS UPR 9069, France |
10:57-11:00 | VI-05 | Electro- and Photoluminescence of C-Induced Ge Quantum Dots | A. Beyer, S. Stutz, H. Sigg, D. Grützmacher, M. Goryll*, T. Stoica*, L. Vescan* | Lab. for Micro- & Nanotechnology, Paul-Scherrer-Inst., Switzerland * Inst. für Schicht- und Ionentechnik, Forschungszentrum Jürich., Germany |
11:00-11:03 | VI-06 | Self-Ordering in Size and Position of Vertically Stacked Ge Islands | M. Miura, J. M. Hartmann*, J. Zhang*, S. Koh, B. A. Joyce*, and Y. Shiraki | RCAST, Univ. of Tokyo., Japan * CEDM, Blackett Lab., Imperial College., UK |
11:03-11:06 | VI-07 | Size Reduction of Ge Islands by Combining Vertical Stacking Effect and Low Temperature Growth | H. Takamiya, M. Miura*, J. Mitsui, S. Koh*, T. Hattori, and Y. Shiraki* | Dept. of Electrical & Electrical Engineering, Musashi Inst. of Technology., Japan * RCAST, Univ. of Tokyo., Japan |
11:06-11:09 | VI-08 | Strain-Balanced Si/Si1-xGex Multiple Quantum Wells on Si1-yGey Virtual Substrates for Optical Device Applications | K. Kawaguchi, S. Koh, Y. Shiraki, N. Usami*, J. Zhang+, N. J. Woods+, G. Breton+, and G. Parry+ | RCAST, Univ. of Tokyo., Japan * IMR, Tohoku Univ., Japan + CEMD, Imperial College, Blackett Lab., UK |
11:09-11:12 | VI-09 | Growth and Characterisation of Si/SiGe Quantum Cascade Structures Deposited by Molecular Beam Epitaxy | G. Dehlinger, L. Diehl, U. Gennser, H. Sigg, E. Müller, S. Stutz, J.Faist*, K. Ensslin+, G. Bauer#, J. Stangl#, and D. Grätzmacher | Lab. for Micro- & Nanotechnology, Paul-Scherrer-Inst., Switzerland * Inst. of Physics, Univ. of Neuchâtel., Switzerland + Solid State Physics Lab., ETH Zürich., Switzerland # Inst. für Halbleiterphysik, Johannes Kepler Univ. Linz., Austria |
11:12-11:15 | VI-10 | Study of Influence of Si Growth Rate on Ge Surface Segregation by Si Knudsen Cell | K. Nakagawa, N. Sugii*, S. Yamaguchi+, and S. Park+ | Inst. of Inorganic Synthesis, Yamanashi Univ., Japan * Central Research Lab., Hitachi Ltd., Japan + Hitachi Research Lab., Hitachi Ltd., Japan |
11:15-11:18 | VI-11 | Microscopic Analysis of Crystallization Process of Amorphous Si/Ge Multi-Layered Structures on Quartz Substrate | S. K. Park, S. Yamaguchi, and N. Sugii* | Hitachi Research Lab., Hitachi Ltd., Japan * Central Research Lab., Hitachi Ltd., Japan |
11:18-11:21 | VI-12 | Initial Growth Property of Ge on Si(100) Substrate by Ion-Beam Sputtering | K. Sasaki, and T. Hata | Graduate School of Natural Science & Technology, Kanazawa Univ., Japan |
11:21-11:24 | VI-13 | Adsorption and Thermal Decomposition Processes of Silane on SiGe Surfaces | N. Kamakura, A. Seyama, M. Shinohara, Y. Kimura, and M. Niwano | RIEC, Tohoku Univ., Japan |
11:24-11:27 | VI-14 | Suppressed Adsorption of Source-Gas Molecules on Strained Surface: RT Adsorption of GeH4 on Ge(111)-5x5/Si(111) | T. Murata, M. Suemitsu, T. Abe* | RIEC, Tohoku Univ., Japan * Dept. of Electronics, Tohoku Inst. of Technology, Japan |
11:27-11:30 | VI-15 | Surface Chemistry During Si Gas-Source Molecular Beam Epitaxy In-Situ Doped with Phosphine | M. Suemitsu and Y. Tsukidate | RIEC, Tohoku Univ., Japan |
11:30-11:33 | VI-16 | New Approach for Si Atomic-Layer-Controlled Growth Method Using Thermally-Cracked Hydride Molecule | N. Hosoya, S. Daiju, and Y. Suda | Fac. of Technology, Tokyo Univ. Agriculture & Technology, Japan |
11:33-11:36 | VI-17 | Scanning Tunneling Microscopy Study of Ge Epitaxy on C-Adsorbed Si(100) Surfaces | Y. Torige, M. Okada, H.Ikeda, A. Sakai, S. Zaima* and Y. Yasuda | Dept. of Crystalline Materials Science, Graduate School of Engineering, Nagoya Univ., Japan * Center for Cooperative Research in Advanced Science & Technology, Nagoya Univ., Japan |
11:36-11:39 | VI-18 | Atomic-Order Plasma Nitridation of Si under the Si Surface Cooling | T. Seino, D. Muto, T. Matsuura and J. Murota | RIEC, Tohoku Univ., Japan |
11:39-11:42 | VI-19 | Self-Limiting Surface Reaction of SiH4 and CH3SiH3 on Ge(100) | M. Fujiu, M. Sakuraba, T. Matsuura and J. Murota | RIEC, Tohoku Univ., Japan |
11:42-11:45 | VI-20 | Thermal Nitridation of Ultrathin Silicon Dioxide Films at 750-850oC in an NH3 Environment | O.Jintsugawa, M.Sakuraba, T.Matsuura and J.Murota | RIEC, Tohoku Univ., Japan |
11:45-11:48 | VI-21 | Buffered HF Etching Characteristics of Si1-x-yGexCy Epitaxial Films | S. Ishida*,+, Y. Hashiba*, T. Matsuura* and J. Murota* | * RIEC, Tohoku Univ., Japan + Morita Chemical Industries Co., Ltd., Japan |
11:48-11:51 | VI-22 | Anomaly of Ge Diffusion in Si/SiO2 Structure | S. Yamaguchi, S. K. Park, N. Sugii*, and K. Nakagawa+ | Hitachi Research Lab., Hitachi Ltd., Japan * Central Research Lab., Hitachi Ltd., Japan + Inst. of Inorganic Synthesis, Yamanashi Univ., Japan |
11:51-11:54 | VI-23 | Segregation and Diffusion of Ge and P for the In Situ P-Doped Si1-xGex/Si | K.W. Koh, J.C. Bea, H.J. Oh, H. Choi, T. Tanabe, M.G. Lee, T. Hirosue, K.T.Park, H. Kurino, and M. Koyanagi | Dept. of Machine Intelligence & Systems Engineering, Tohoku Univ., Japan |
11:54-11:57 | VI-24 | Ge Diffusion and Strain Relaxation During Annealing of the Strained-Si/Si0.7Ge0.3. | N. Sugii | Central Research Lab., Hitachi Ltd., Japan |
11:57-12:00 | VI-25 | Epitaxial Growth of Pure 30Si Layers on a Natural Si(100) Substrate Using Enriched 30SiH4 | Y. Nakabayashi, T. Segawa, H. I. Osman, K. Saito, S. Matsumoto, J. Murota*, K. Wada+, and T. Abe# | Dept. of Electronics & Electrical Engineering, Keio Univ., Japan * RIEC, Tohoku Univ., Japan + Dept. of Materials Science & Engineering, Massachusetts Inst. of Technology., USA # Isobe R&D Center, Shin-Etsu Handotai., Japan |
12:00-12:03 | VI-26 | Novel Ellipsometry Technique to Measure Strain in Si1-xGex and Si1-x-yGexCy Thin Films | S. Mukerjee, S. Madhavi, and V. Venkataraman | Dept. of Physics, Indian Inst. of Science., India |
Time | ID No. | Title | Authors | Affiliation |
---|---|---|---|---|
15:10-15:40 | VII-01 Invited |
High Spatial Resolution X-Ray Techniques for Semiconductor Studies | S. Lagomarsino(a), S. Di Fonzo (b), W. Jark (b), C. Giannini (c), L. De Caro (c) and A. Cedola (a) | (a) IESS-CNR, Rome., Italy
(b) Sincrotrone Trieste, Trieste., Italy (c) PASTIS-CNRSM, Brindisi., Italy |
15:40-16:10 | VII-02 Invited |
Self-Assembled Si/Ge Quantum Dots: Formation, Ordering and Infrared Applications | K. Brunner | Walter Schottky Inst., TU Munich., Germany |
16:10-16:40 | VII-03 Invited | Relationship between Graded Layer Structures and Defects in Silicon-Germanium Virtual Substrates | K. Mizushima, I. Shiono, K. Yamaguchi, and N. Muraki* | Central Research Inst., Mitsubishi Materials Corp., Japan
* Mitsubishi Materials Silicon Corp., Japan |