First International WorkShop on 

New Group IV (Si-Ge-C)
  Semiconductors :
Control of Properties
and
  Applications to
  Ultrahigh Speed and
Opto-Electronic Devices

• Sunday, January 21
  
  
  • Registration 17:30-20:30
  
  
  • Reception 19:00-20:30



• Monday, January 22
  
  
  • Introductory Talk 9:00-9:15
    
    
  • Special Session I : System Application of SiGe(C) 9:15-10:45
    
    

    Time	ID No.	Title	Authors	Affiliation
    9:15-9:45	I-01 Invited	Technologies for Wireless: A Value-added Approach	A. Ourmazd	IHP, Germany
    9:45-10:15	I-02 Invited	Self-Aligned SEG SiGe HBT and Bi CMOS Technology	K. Washio	ULSI Research Dept., Central Research Lab., Hitachi Ltd., Japan
    10:15-10:45	I-03 Invited	SiGe Nanoelectronics: From Increasing CMOS Functionality to Quantum Information Systems Using Self-Assembled Ge Quantum Dots on Si	K. L. Wang, J. L. Liu, and G. Jin	UCLA, USA

    
    
    
  • Session II : Electronic Devices & Fabrication (Short Presentation 3min x 17 Talks ) 11:00-11:51
    
    

    Time	ID No.	Title	Authors	Affiliation
    11:00-11:03	II-01	Low-Frequency-Noise and Its Correlation with Transconductance in Si1-xGex-Channel pMOSFETs	T. Tsuchiya, T. Matsuura*, and J. Murota*	Fac. of Interdisciplinary Science & Engineering, Shimane Univ., Japan * RIEC, Tohoku Univ., Japan
    11:03-11:06	II-02	High Hole Mobility in SiGe/Pure-Ge Channel /SiGe Hetero Structures and Its Application to FETs	S. Tokumitsu, T. Irisawa*, H. Miura*, S. Koh*, K. Nakagawa+, T. Hattori, and Y. Shiraki*	Dept. of Electrical & Electrical Engineering Musashi Inst. of Technology., Japan * RCAST, Univ. of Tokyo., Japan + Inst. of Inorganic Synthesis, Yamanashi Univ., Japan
    11:06-11:09	II-03	δ-Doped-Channel Si1-xGex FETs Grown by MBE	H. Miura, Y. P. Wang*, S. Koh, S. L. Wu+, S. J. Chang*, and Y. Shiraki	RCAST, Univ. of Tokyo., Japan * Dept. of Electrical Engineering, National Cheng Kung Univ., Taiwan + Dept. of Electronics Engineering, Cheng Shiu Inst. of Technology, Kaohsiung., Taiwan
    11:09-11:12	II-04	Comparison of Temperature Dependent Device Parameters for Strained-Si1-xGex and Partially Strain Compensated Si1-x-yGexCy Heterostructure PMOSFETs	S. K. Ray, G. S. Kar, S. Maikap, and S. K. Banerjee*	Dept. of Physics & Meteorology, IIT., India * Microelectronics Research Center, Univ. of Texas., USA
    11:12-11:15	II-05	High Performance SiGe Channel Heterostructure Dynamic Threshold pMOSFET (HDTMOS)	T.Takagi, A.Inoue, Y.Hara, Y.Kanzawa, and M.Kubo	Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd., Japan
    11:15-11:18	II-06	Si/SiGe-Heterojunction Bipolar Power Transistors for 25 V Cellular Base Station Type of Applications	T. Johansson, and W.-X. Ni*	Ericsson Microelectronics AB., Sweden * Dept. of Physics, Linköping Univ., Sweden
    11:18-11:21	II-07	Fabrication of 0.1µm MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si1-xGex CVD	T. Yamashiro*, M. Sakuraba, T. Matsuura, J. Murota and T. Tsuchiya+	RIEC, Tohoku Univ., Japan * Miyagi OKI Electric Co., Ltd., Japan + Fac. of Science and Engineering, Shimane Univ., Japan
    11:21-11:24	II-08	Selective Growth of Amorphous SiGe Films for Facet-Free Elevated Source/Drain Structure	A. Miyauchi, Y. Inoue, and T. Andou*	Hitachi Research Lab., Hitachi Ltd., Japan * Device Development Center, Hitachi Ltd., Japan
    11:24-11:27	II-09	Ultra-Shallow Junction with Elevated SiGe Source/Drain Fabricated by Laser Induced Atomic Layer Doping	K.W. Koh, J.C. Bea, H.J.Oh, H. Choi, M.G. Lee, T. Tanabe, T. Hirosue, K.T.Park, H. Kurino, and M. Koyanagi	Dept. of Machine Intelligence & Systems Engineering, Tohoku Univ., Japan
    11:27-11:30	II-10	Improvement of Thermal Stability in In-Situ Doped Poly-SiGe Gate on SiON	T. Sadoh, Fitrianto, A. Kenjo, A. Miyauchi*, H. Inoue*, and M. Miyao	Dept. of Electronics, Kyushu Univ., Japan * Hitachi Research Lab., Hitachi., Japan
    11:30-11:33	II-11	Etching Feature Improvement by Side-Wall Protection with B in P-Doped Polysilicon	A. Fukuchi, T. Seino, T. Matsuura and J. Murota	RIEC, Tohoku Univ., Japan
    11:33-11:36	II-12	Heavy Doping Characteristics in Si Epitaxial Growth at 450oC by Alternate Supplies of PH3 and SiH4	Y.Shimamune, M.Sakuraba, T.Matsuura and J.Murota	RIEC, Tohoku Univ., Japan
    11:36-11:39	II-13	Temperature Effects on Oxidization Process of SiGe-on-Insulator Structures to Form Thin and High-Ge-Content SiGe Virtual Substrates	N. Sugiyama, T. Tezuka, T. Mizuno, M. Suzuki*, Y. Ishikawa+, N. Shibata+, and S. Takagi	Advanced LSI Technology Lab., Corporate R&D Center, Toshiba Corp., Japan * Environmental Engineering & Analysis Center, Corporate R&D Center, Toshiba Corp., Japan + Japan Fine Ceramics Center., Japan
    11:39-11:42	II-14	Growth of Si0.75Ge0.25 Alloy Layers Using 1-Step Short-Period (Si14/Ge1)N Superlattices as Buffer Layers on Si(001) Substrates	M.M.Rahman, H.Matada, T.Tambo, and C. Tatsuyama	Dept. of Electrical & Electronic Engineering, Fac. of Engineering, Toyama Univ., Japan
    11:42-11:45	II-15	Formation of Strain-Relaxed SiGe Films on Si Substrates with Cap Layers	K. Sugimoto, T. Yamamoto, M. Okada, H.Ikeda, A. Sakai, S. Zaima* and Y. Yasuda	Dept. of Crystalline Materials Science, Graduate School of Engineering, Nagoya Univ., Japan * Center for Cooperative Research in Advanced Science & Technology, Nagoya Univ., Japan
    11:45-11:48	II-16	Successful Fabrication of SiGe Bulk Crystal with Uniform Composition as a Substrate for Si-Based Heterostructures	Y.Azuma, N.Usami, T.Ujihara, G.Sazaki, Y.Murakami, K.Fujiwara, S.Miyashita*, and K.Nakajima	IMR, Tohoku Univ., Japan * Toyama Medical & Pharmaceutical Univ., Japan
    11:48-11:51	II-17	A Study from First Principles of Atomic and Electronic Structures in Si1-x-yGexCy Alloys	M. Ohfuti, Y. Sugiyama, Y. Awano, and N. Yokoyama	Fujitsu Laboratories Ltd., Japan

    
    
    
  • Special Session III : Process Technologies with SiGe(C) 14:00-16:00
    
    

    Time	ID No.	Title	Authors	Affiliation
    14:00-14:30	III-01 Invited	SiGe:C Epitaxy for HBT Applications	B. Tillack, D. Knoll, B. Heinemann, K.E. Ehwald, D. Wolansky, Y. Yamamoto, D. Krüger, and P. Schley	IHP, Germany
    14:30-15:00	III-02 Invited	Point Defect Engineering for Dopant Control in Silicon-Based Nanodevices	J.C. Sturm, M.S. Carroll, M. Yang*, E. Stewart, and J. Gray	Dept. of Electrical Engineering, Center for Photonics & Optoelectronic Materials, Princeton Univ., USA
    15:00-15:30	III-03 Invited	Growth and Characterisation of Abrupt Doping Profiles in Si and SiGe Epitaxy	C.P. Parry, G. Eifler, M. Oehme, M. Bauer, E. Kasper, T.G. Grasby,* A.D. Lambert*	Inst. für Halbleitertechnik, Univ. Stuttgart, Germany *Advanced. Semiconductor. Research. Group, Dept. of Physics, Univ. of Warwick, UK
    15:30-16:00	III-04 Invited	Si1-xGex Channel Field Effect Transistors Using δ-Doping Technique	S. J. Chang, and S. L. Wu*	Inst. of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung Univ.., Taiwan * Dept. of Electronics Engineering, Cheng Shiu Inst. of Technology., Taiwan

    
    
    
  • Session IV : Growth Technologies & Materials (Short Presentation 3min x 13 Talks ) 16:15-16:54
    
    

    Time	ID No.	Title	Authors	Affiliation
    16:15-16:18	IV-01	Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition	S. Yagi, K. Abe, T. Okabayashi, A. Yamada, and M. Konagai	Dept. of Physical Electronics, Tokyo Inst. of Technology, Japan
    16:18-16:21	IV-02	RTCVD of Si1-xGex:C in a Production Single Wafer Epitaxy System	D. J. Meyer	ASM America, Inc., USA
    16:21-16:24	IV-03	Growth of High-Quality Si1-x-yGexCy Alloys over a Wide Range of Carbon Content Using Rapid Thermal Chemical Vapor Deposition	Y. Sakuma, T. Ueno, Y. Sugiyama, H. Tanaka, and N. Yokoyama	Fujitsu Laboratories Ltd., Japan
    16:24-16:27	IV-04	Investigation of Epitaxy Loading and Geometry Effects in an 8-Inch SiGe:C BiCMOS Technology	D. Knoll, B. Heinemann, K.E. Ehwald, D. Wolansky, P. Schley, and B. Tillack	IHP, Germany
    16:27-16:30	IV-05	Development of Ultraclean LPCVD Equipment for SiGe(C) Epitaxial Growth	Y. Kunii, Y. Inokuchi, A. Moriya, and J. Murota*	Hitachi Kokusai Electric Inc., Japan * RIEC, Tohoku Univ., Japan
    16:30-16:33	IV-06	Growth of Si1-x-yGexCy Crystals by UHV-CVD: Effect of Ge Content on Substitutional C Incorporation	Y.Kanzawa, K.Nozawa, T.Saitoh, T.Takagi and M.Kubo	Advanced Semiconductor Group, Advanced Technology Research Lab., Matsushita Electric. Industrial, Japan
    16:33-16:36	IV-07	Properties of Si1-x-yGexCy Low-Temperature Epitaxial Growth by UHV/CVD	I. Suzumura, K. Oda, and K. Washio	Central Research Lab., Hitachi Ltd., Japan
    16:36-16:39	IV-08	B- and P-Doped SiGe(C) Epitaxial Growth on Si(100) by Ultraclean LPCVD	T. Noda*, D. Lee, H. Shim, M. Sakuraba, T. Matsuura, and J. Murota	RIEC, Tohoku Univ., Japan * Hitachi Kokusai Electric Co., Ltd., Japan
    16:39-16:42	IV-09	Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces	Y. Hayashi*,***, T. Katoh*, H. Ikeda*, A. Sakai*, S. Zaima**, and Y. Yasuda*	* Dept. of Crystalline Materials Science, Graduate School of Engineering, Nagoya Univ., Japan ** Center for Cooperative Research in Advanced Science & Technology, Nagoya Univ., Japan *** Electronics & Information Dept., Nagoya Municipal Industrial Research Inst., Japan
    16:42-16:45	IV-10	Effects of Sb Atoms on Epitaxial Growth of CoSi2(100) Films on Si(100) Surfaces	H. Onoda*, Y. Hayashi*,#, H. Ikeda*, A. Sakai*, S. Zaima+, and Y. Yasuda*	* Graduate School of Engineering, Nagoya Univ., Japan + Center for Cooperative Research in Advanced Science & Technology, Nagoya Univ., Japan # Electronics & Information Dept., Nagoya Municipal Industrial Research Inst., Japan
    16:45-16:48	IV-11	First Principles Study on Heteroepitaxial FeSi2 on Si(111)	K. Yamaguchi and K. Mizushima	Central Research Inst., Mitsubishi Materials Corp., Japan
    16:48-16:51	IV-12	Solid-Phase Reactions of a Ti/Si1-xGex/Si System	A. Tobioka, A. Yamanaka, O. Nakatsuka, H. Ikeda, A. Sakai, S. Zaima* and Y. Yasuda	Graduate School of Engineering, Nagoya Univ., Japan * Center for Cooperative Research in Advanced Science & Technology, Nagoya Univ., Japan
    16:51-16:54	IV-13	Study on Solid-Phase Reactions in Ti/p+-Si1-x-yGexCy/Si(100) Contacts	A. Tobioka, Y. Tsuchiya, H. Ikeda, A. Sakai, S. Zaima*, J. Murota**, and Y. Yasuda	Graduate School of Engineering, Nagoya Univ., Japan * Center for Cooperative Research in Advanced Science & Technology, Nagoya Univ., Japan ** RIEC, Tohoku Univ., Japan

    
    
    
  • Poster Session II & IV 17:00-18:30
  • Banquet 18:45-20:45



• Tuesday, January 23
  
  
  • Special Session V : SiGe(C) Heterostructure Substrates for High Performance Devices 9:00-10:30
    
  • Session VI : Optical Devices, Quantum Dots & Quantum Effects (Short Presentation 3min x 26 Talks ) 10:45-12:03
    
  • Poster Session VI : 13:30-15:00
    
  • Special Session VII : Advanced Analysis & Future Devices 15:10-16:40
    
  • Closing Remarks 16:40-16:50