September
4-6, 2012,
Vigo, Spain
Final Program |
||
September 4th (Tuesday) |
||
Meeting point: Entrance of the Industrial Engineering School (EEI) at Campus Marcosende | ||
10:30 - 10:45 | ||
Welcome and opening | ||
-
Vice-Rector for International Relations: Manuel Fernández
(University of Vigo) - School of Industrial Engineering, Director: Juan Pou (University of Vigo) - Coordinator at Japan: Junichi Murota (Tohoku University) - Coordinator at Spain: Stefano Chiussi (University of Vigo) |
||
Abstract |
Session 1 : General introductions |
|
10:45 - 11:00 (15 min) |
||
1. " | General information on research lines of possible interest at the Laser group of the University of Vigo", | |
Stefano
Chiussi, Pio González, Julia
Serra, New Materials Group, University of Vigo (Spain) |
||
11:00 - 11:30 (30 min) | ||
2. " |
Laser processing and synthesis of materials at micro- and nanoscale", | |
Juan Pou,
Fernando Lusquiños, Felix Quintero, Mohammed
Boutinguiza, Rafael Comesaña, Antonio Riveiro,
Jesus del Val, Industrial Applications of Lasers Group, University of Vigo (Spain) |
||
11:30 - 13:30 | ||
Guided
visit to the Laboratories of the Laser group |
||
13:30 - 15:00 Lunch: Light buffet (pinchos) at EEI (sponsored) |
||
15:00 - 18:00 | ||
Guided visit to the Central Research facilities (CACTI) and the Campus Marcosende | ||
Abstract |
||
September 5th (Wednesday) |
||
09:50 | ||
Meeting point: “Aula de Grados” at the Industrial Engineering School (EEI), Campus Marcosende | ||
Presenting authors are requested to upload their final presentation on our computer and to thoroughly check every aspect of their presentation. Confidentiality is guaranteed and presentations will be erased from the computer after the JSPS-Seminar. | ||
Session 2 : Si and SiGe based materials |
||
10:00 - 10:25 (25 min) | ||
3. " | Atomically Controlled Formation of Strained Si1-xGex/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode", | |
Masao Sakuraba,
Junichi Murota, Tohoku University (Japan) |
||
10:25 - 10:50 (25 min) | ||
4. " | Charge Storage and Optoelectronic Response of Silicide-Nanodots/Si-Quantum-Dots Hybrid-Floating-Gate MOS Devices", | |
Seiichi Miyazaki
1 , Katsunori Makihara 1,
Mitsuhisa Ikeda 2 1 Nagoya University, 2 Hiroshima University (Japan) |
||
10:50 - 11:15 (25 min) | ||
5. " | Optical studies of Ge/Si based heterostructures and self interstitials related defects in Si", | |
Joaquim Leitao,
Departamento de Física & I3N, Universidade de Aveiro (Portugal) |
||
11:15 - 11:40 (25 min) | ||
6. " |
Low threading dislocation density Ge growth and heavy phosphorus doping in Ge", | |
Yuji Yamamoto
1, Peter Zaumseil
1, Grzegorz Kozlowski
1, Rainer Kurps
1 and Bernd Tillack
1,2, 1 IHP, Frankfurt an der Oder (Germany), 2 Technische Universität Berlin (Germany) |
||
11:40 - 12:05 (25 min) | ||
7. " |
MBE growth of tensile-strained Ge/Si(001)", | |
K.P.T. Phuong
1, M.T. Dau
1, Vinh Le
Thanh 1,
M. Petit 1,
M. Stoffen 1,
S. Chiussi 2,
1 Aix-Marseille Université Marseille (France), 2 Department of Applied Physics, University of Vigo (Spain) |
||
12:05 - 12:15 Coffee break (sponsored) | ||
Presenting authors that did not upload an check their presentations are requested to do it now. Confidentiality is guaranteed and presentations will be erased from the computer after the JSPS-Seminar. | ||
Session 3 : SiGeSn based and other materials |
||
12:15 - 12:40 (25 min) | ||
8. " | Epitaxial Growth and Characterizations of GeSn and GeSiSn Thin Layers for Nanoelectronic and Optoelectronic Applications", | |
Osamu Nakatsuka,
Noriyuki Taoka, Mitsuo Sakashita, Wakana Takeuchi,
Shigeaki Zaima, Nagoya University (Japan) |
||
12:40 - 13:05 (25 min) | ||
9. " | Epitaxial Growth of Ge1-xSnx with high Sn content by Reduced Pressure CVD", | |
Stephan Wirths, Dan
Buca, Andreas T. Tiedemann, Bernd
Holländer, Patric Bernardy, Toma Stoica, Detlev Grützmacher,
Sigfried Mantl, Forschungszentrum Jülich (Germany) |
||
13:05 - 13:30 (25 min) | ||
10. " | FIB preparation and TEM characterization of Ge/Sn based alloys", | |
Alessandro Benedetti
*, Stefan Stefanov, Julia Serra, Pio González,
Stefano Chiussi, New Materials Group, * CACTI, University of Vigo (Spain) |
||
13:30 - 13:55 (25 min) | ||
11. " | Laser processing of heteroepitaxial GeSn and SiGeSn alloys", | |
Stefan Stefanov,
Carlos Conde, Carmen Serra *, Alessandro Benedetti *,
Stefano Chiussi, New Materials Group, * CACTI, University of Vigo (Spain) |
||
13:55 - 15:00 Lunch: Buffet at E.E.I. Cafeteria (sponsored) | ||
Session 4 : Modelling, applications, and other materials |
||
15:00 - 15:25 (25 min) | ||
12. " | Fabrication of Titanium Oxide Nanotube Micro Gas Sensors by Anodization", | |
Yasuo Kimura,
Ryota Kojima, Shota Kimura, Michio Niwano, Tohoku University (Japan) |
||
15:25 - 15:50 (25 min) | ||
13. " | Application of titanium oxide nanotube films to solar cells", | |
Michio Niwano,
Ryota Kojima, Ma Teng, Yasuo Kimura, Tohoku University (Japan) |
||
15:50 - 16:15 (25 min) | ||
14. " | Dynamic Characteristics of Neuron Models and Microchip Integration of Active Neural Networks", | |
Koji Nakajima,
Tohoku University (Japan) |
||
16:15 - 16:30 Coffee break (sponsored) | ||
16:30 - 16:55 (25 min) | ||
15. " | Ionic Liquid-Gated Organic Field-Effect Transistors", | |
Shohei Iino,
Yasuo Kimura, Michio Niwano, Tohoku University (Japan) |
||
16:55 - 17:20 (25 min) | ||
16. " | UV Excimer laser treatment of SiGe and SiGeSn: Numerical modeling through finite elements methods", | |
Stefan Stefanov,
Carlos Conde, Elena Martín, Julia Serra, Pío
González, Stefano Chiussi, New Materials Group, University of Vigo (Spain) |
||
17:20 - 17:45 (25 min) | ||
17. " | Ion doped apatite coatings by laser ablation", | |
Cosme Rodríguez-Valencia,
Miriam López-Alvarez, Diego Cordero, Helio Aguiar,
Julia Serra, Stefano Chiussi, Pío
González, New Materials Group, University of Vigo (Spain) |
||
17:45 - 18:10 (25 min) | ||
18. " |
Innovative porous SiC ceramics from natural precursors", | |
Miriam López-Alvarez,
Cosme Rodríguez-Valencia, Stefano Chiussi, Julia
Serra, Pío González, New Materials Group, University of Vigo (Spain) |
||
18:10 Closing remarks of seminar session | ||
21:30 - open end Dinner at typical local restaurant or Tapas | ||
September 6th (Thursday) |
||
Meeting point: Industrial Engineering School (EEI) or City Center (to be determined) | ||
10:00 - 13:00 | ||
Bilateral Meetings between participants for evaluating existing co-operations and planning future projects and agreements. | ||