Link to "College of Nanoscale Science and Engineering (CNSE)"   Link to "JSPS Core-to-Core Program : ICRC-ACP4ULSI"


CNSE and JSPS Core-to-Core Program Joint Seminar
"Atomically Controlled Processing/Nanotechnology for Ultralarge Scale Integration"

June 8, 2012,
NanoFab South Auditorium, College of Nanoscale Science and Engineering (CNSE),
State University of New York at Albany, USA

 

Abstract
PDF

 

Program (Ver. 2012-6/7b)

  09:00 - 09:05 Introductory
     
     
  - - - - - - - - - - - - - - - [ Session 1 ] - - - - - - - - - - - - - - -
     
  09:05 - 09:25 (20 min)
PDF 1. " Molecular Self-assembly of Direct Plate Cu Diffusion Barriers",
    Daniel Greenslit and Eric Eisenbraun,
College of Nanoscale Science and Engineering, State University of New York, Albany, USA
     
  09:25 - 09:45 (20 min)
PDF 2. " Atomically Controlled Cu Thin Film Deposition at Ultra-low Temperature",
    Jiajun Mao and Eric Eisenbraun,
College of Nanoscale Science and Engineering, State University of New York, Albany, USA
     
  09:45 - 10:10 (25 min)
PDF 3. " Atomic Scale Processing of Ultra-thin Barriers for Advanced Interconnects",
    Daniel Greenslit, Tonmoy Chakraborty and Eric Eisenbraun,
College of Nanoscale Science and Engineering, State University of New York at Albany, USA
     
     
  10:10 - 10:20 Break (10 min)
     
     
  - - - - - - - - - - - - - - - [ Session 2 ] - - - - - - - - - - - - - - -
     
  10:20 - 10:40 (20 min)
PDF 4. " High Temperature Selective Gas Sensing Using the Plasmonic Response from Au / Metal Oxide Nanocomposite Films",
    Nicholas A. Joy1, Manjula I. Nandasiri2,3, Phillip H. Rogers4, Weilin Jiang5, Tamas Varga3, Satyanarayana V N T Kuchibhatla3,6, Suntharampillai Thevuthasan3 and Michael A. Carpenter1
1 College of Nanoscale Science and Engineering, State University of New York, Albany, USA,
2 Department of Physics, Western Michigan University, USA,
3 EMSL, Pacific Northwest National Laboratory, USA,
4 Cortana Corporation, USA,
5 FCSD, Pacific Northwest National Laboratory, USA,
6 Battelle Science and Technology India, India
     
  10:40 - 11:00 (20 min)
PDF 5. " Electrical Characterization of Ultrathin Ag Films Deposited on Cu",
    E. Tatem, E. Eisenbraun and A. E. Kaloyeros,
College of Nanoscale Science and Engineering, State University of New York, Albany, USA
     
  11:00 - 11:25 (25 min)
PDF 6. " Dynamic Characteristics of Neuron Models and Microchip Integration",
    Koji Nakajima,
Research Institute of Electrical Communication, Tohoku University, Japan
     
  11:25 - 11:45 (20 min)
PDF 7. " Graphene p-n junctions (GPNJ) for Electrical Switching",
    S. Sutar1, E. Comfort1, J. Liu1, T. Taniguchi2, K. Watanabe2 and J. U. Lee1,
1 College of Nanoscale Science and Engineering, State University of New York, Albany, USA,
2 NIMS, Japan
     
  11:45 - 12:05 (20 min)
PDF 8. " Current-Induced Cleaning of Adsorbates from Suspended Single-Walled Carbon Nanotube Diodes",
    Argyrios Malapanis, Everett Comfort and Ji Ung Lee,
College of Nanoscale Science and Engineering, State University of New York at Albany
     
     
  12:05 - 13:05 Lunch (60 min)
     
     
  - - - - - - - - - - - - - - - [ Session 3 ] - - - - - - - - - - - - - - -
     
  13:05 - 13:25 (20 min)
PDF 9. " Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structures",
    Kimihiko Kato1,2, Mitsuo Sakashita1, Wakana Takeuchi1, Noriyuki Taoka1, Osamu Nakatsuka1, and Shigeaki Zaima1,
1 Nagoya University, Japan,
2 Research Fellow of JSPS, Japan
     
  13:25 - 13:45 (20 min)
PDF 10. " Epitaxial Growth and Characterization of GeSn Layers on Ge(110) and Si(110) Substrates",
    Takanori Asano, Shohei Kidowaki, Yosuke Shimura, Noriyuki Taoka, Osamu Nakatsuka and Shigeaki Zaima,
Graduate School of Engineering, Nagoya University, Japan
     
  13:45 - 14:10 (25 min)
PDF 11. " Optical and X-Ray Characterization of Pseudomorphic Si1-xGex/Si",
    A. C. Diebold1, G. Muthinti1, M. Medikonda1, T. N. Adam1 and A. Reznicek2,
1 College of Nanoscale Science and Engineering, State University of New York, Albany, USA,
2 IBM, USA
     
  14:10 - 14:35 (25 min)
PDF 12. " GeSn Alloy for Nanoelectronic and Optoelectronic Devices",
    Osamu Nakatsuka, Yosuke Shimura, Wakana Takeuchi, Noriyuki Taoka and Shigeaki Zaima,
Department of Crystalline Materials Science, Graduate School of Engineering,
Nagoya University, Japan
     
     
  14:35 - 14:45 Break (10 min)
     
     
  - - - - - - - - - - - - - - - [ Session 4 ] - - - - - - - - - - - - - - -
     
  14:45 - 15:10 (25 min)
PDF 13. " Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application",
    Seiichi Miyazaki,
Department of Electrical Engineering and Computer Science, Graduate School of Engineering,
Nagoya University, Japan
     
  15:10 - 15:35 (25 min)
PDF 14. " Fabrication of Single-Electron Transistors with a Self-Alignment Process Using Anodization of Aluminum Microelectrodes",
    Michio Niwano and Yasuo Kimura,
Research Institute of Electrical Communication, Tohoku University, Japan
     
  15:35 - 16:00 (25 min)
PDF 15. " Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors",
    Masao Sakuraba and Junichi Murota,
Research Institute of Electrical Communication, Tohoku University, Japan
     
     
  16:00 - 16:05 Closing Remarks
     
     

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