Link to "College of Nanoscale Science and Engineering (CNSE)" | Link to "JSPS Core-to-Core Program : ICRC-ACP4ULSI" |
June
8, 2012,
NanoFab South Auditorium, College of Nanoscale Science and
Engineering (CNSE),
State University of New York at Albany, USA
Abstract |
Program (Ver. 2012-6/7b) |
|
09:00 - 09:05 Introductory | ||
- - - - - - - - - - - - - - - [ Session 1 ] - - - - - - - - - - - - - - - | ||
09:05 - 09:25 (20 min) | ||
1. " | Molecular Self-assembly of Direct Plate Cu Diffusion Barriers", | |
Daniel Greenslit
and Eric Eisenbraun, College of Nanoscale Science and Engineering, State University of New York, Albany, USA |
||
09:25 - 09:45 (20 min) | ||
2. " | Atomically Controlled Cu Thin Film Deposition at Ultra-low Temperature", | |
Jiajun Mao
and Eric Eisenbraun, College of Nanoscale Science and Engineering, State University of New York, Albany, USA |
||
09:45 - 10:10 (25 min) | ||
3. " | Atomic Scale Processing of Ultra-thin Barriers for Advanced Interconnects", | |
Daniel Greenslit, Tonmoy Chakraborty
and Eric Eisenbraun,
College of Nanoscale Science and Engineering, State University of New York at Albany, USA |
||
10:10 - 10:20 Break (10 min) | ||
- - - - - - - - - - - - - - - [ Session 2 ] - - - - - - - - - - - - - - - | ||
10:20 - 10:40 (20 min) | ||
4. " | High Temperature Selective Gas Sensing Using the Plasmonic Response from Au / Metal Oxide Nanocomposite Films", | |
Nicholas A. Joy1,
Manjula I. Nandasiri2,3,
Phillip H. Rogers4,
Weilin Jiang5,
Tamas Varga3,
Satyanarayana V N T Kuchibhatla3,6,
Suntharampillai Thevuthasan3
and Michael A. Carpenter1 1 College of Nanoscale Science and Engineering, State University of New York, Albany, USA, 2 Department of Physics, Western Michigan University, USA, 3 EMSL, Pacific Northwest National Laboratory, USA, 4 Cortana Corporation, USA, 5 FCSD, Pacific Northwest National Laboratory, USA, 6 Battelle Science and Technology India, India |
||
10:40 - 11:00 (20 min) | ||
5. " | Electrical Characterization of Ultrathin Ag Films Deposited on Cu", | |
E. Tatem, E.
Eisenbraun and A. E. Kaloyeros, College of Nanoscale Science and Engineering, State University of New York, Albany, USA |
||
11:00 - 11:25 (25 min) | ||
6. " | Dynamic Characteristics of Neuron Models and Microchip Integration", | |
Koji Nakajima,
Research Institute of Electrical Communication, Tohoku University, Japan |
||
11:25 - 11:45 (20 min) | ||
7. " | Graphene p-n junctions (GPNJ) for Electrical Switching", | |
S. Sutar1,
E. Comfort1,
J. Liu1, T.
Taniguchi2,
K. Watanabe2
and J. U. Lee1, 1 College of Nanoscale Science and Engineering, State University of New York, Albany, USA, 2 NIMS, Japan |
||
11:45 - 12:05 (20 min) | ||
8. " | Current-Induced Cleaning of Adsorbates from Suspended Single-Walled Carbon Nanotube Diodes", | |
Argyrios Malapanis,
Everett Comfort and Ji Ung Lee, College of Nanoscale Science and Engineering, State University of New York at Albany |
||
12:05 - 13:05 Lunch (60 min) | ||
- - - - - - - - - - - - - - - [ Session 3 ] - - - - - - - - - - - - - - - | ||
13:05 - 13:25 (20 min) | ||
9. " | Control of Interfacial Properties of Pr-oxide/Ge Gate Stack Structures", | |
Kimihiko Kato1,2,
Mitsuo Sakashita1,
Wakana Takeuchi1,
Noriyuki Taoka1,
Osamu Nakatsuka1,
and Shigeaki Zaima1,
1 Nagoya University, Japan, 2 Research Fellow of JSPS, Japan |
||
13:25 - 13:45 (20 min) | ||
10. " | Epitaxial Growth and Characterization of GeSn Layers on Ge(110) and Si(110) Substrates", | |
Takanori Asano,
Shohei Kidowaki, Yosuke Shimura, Noriyuki Taoka, Osamu
Nakatsuka and Shigeaki Zaima, Graduate School of Engineering, Nagoya University, Japan |
||
13:45 - 14:10 (25 min) | ||
11. " | Optical and X-Ray Characterization of Pseudomorphic Si1-xGex/Si", | |
A. C. Diebold1,
G. Muthinti1,
M. Medikonda1,
T. N. Adam1
and A. Reznicek2, 1 College of Nanoscale Science and Engineering, State University of New York, Albany, USA, 2 IBM, USA |
||
14:10 - 14:35 (25 min) | ||
12. " | GeSn Alloy for Nanoelectronic and Optoelectronic Devices", | |
Osamu Nakatsuka,
Yosuke Shimura, Wakana Takeuchi, Noriyuki Taoka and
Shigeaki Zaima, Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan |
||
14:35 - 14:45 Break (10 min) | ||
- - - - - - - - - - - - - - - [ Session 4 ] - - - - - - - - - - - - - - - | ||
14:45 - 15:10 (25 min) | ||
13. " | Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Application", | |
Seiichi Miyazaki,
Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Japan |
||
15:10 - 15:35 (25 min) | ||
14. " | Fabrication of Single-Electron Transistors with a Self-Alignment Process Using Anodization of Aluminum Microelectrodes", | |
Michio Niwano
and Yasuo Kimura, Research Institute of Electrical Communication, Tohoku University, Japan |
||
15:35 - 16:00 (25 min) | ||
15. " | Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors", | |
Masao Sakuraba
and Junichi Murota, Research Institute of Electrical Communication, Tohoku University, Japan |
||
16:00 - 16:05 Closing Remarks | ||