First International WorkShop on 

New Group IV
  Semiconductor Nanoelectronics

ABSTRACT DEADLINE: April 15, 2005.

SCHEDULE
PROGRAM
PROGRAM  (Excel file)

SCOPE
SUBMISSION OF ABSTRACT
ORGANIZATION
WORKSHOP PRESENTATIONS
INVITED SPEAKERS
REGISTRATION
HOTEL ACCOMMODATION
CORRESPONDENCE
TRANSPORTATION
SCHEDULE
PROGRAM
PROGRAM  (Excel file)
LINK

     The first International Workshop on New Group IV Semiconductor Nanoelectronics (SiGeC Workshop 2005) will be held in Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, Sendai, Japan, on May 27-28, 2005, just after fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4). This workshop will focus on new group IV semiconductor nanoelectronics.

SCOPE

-  Theoretical and Experimental Aspects on Homo-and Heteroepitaxial growth

-  Growth Mechanisms of Molecular Beam Epitaxy and Chemical Vapor Deposition

-  Formation and Properties of Self-Organized/ Quantum-Confined Structures

-  Novel Growth Techniques

-  Electronic and Crystallographic Structures of Surfaces and Interfaces

-  Si-Ge and Si-Ge-C and other Group IV Materials

-  Silicides/Si(Ge, C) Heterostructures

-  Oxides and Nitrides/Si(Ge, C) Heterostructures

-  Electronic Device Applications of Si/Ge(C) Systems

-  Optical Device Applications of Si/Ge(C) Systems

-  Si-Based Light Emission and Detection

-  Relaxed Buffers, Compliant Substrates

-  Doping in Group IV Systems

-  Device Technology for Si-based group IV Systems

SUBMISSION OF ABSTRACTS

  Submission Deadline: April 15, 2005  

      ONE ORIGINAL and TWO COPIES of a one-page camera-ready abstract with one-page figures, written in English on white bond paper (A4 size; 2.5cm margin on four sides), should be submitted to the Program Chairman at the following address:

Prof. Junichi Murota

Program Committee Chairman, SiGeC Workshop 2005

Research Institute of Electrical Communication,

Tohoku University

2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan

Tel. & Fax.: +81-22-217-5548

e-mail: SiGe@murota.riec.tohoku.ac.jp

     The abstract should be headed by the title, author(s), affiliation(s), address, telephone number, fax number and e-mail address, and clearly describe the originality and new contributions of the work. The title, author(s), affiliation(s), address, telephone number, fax number and e-mail address should be also sent by E-mail to SiGe@murota.riec.tohoku.ac.jp

     Papers to be presented at the workshop will be selected by the Program Committee based on the submitted abstracts. The notice of acceptance will be e-mailed to the first author by April 22, 2005.

  INTERNATIONAL ADVISORY COMMITTEE

ORGANIZING COMMITTEE

PROGRAM COMMITTEE

WORKSHOP PRESENTATIONS

　INVITED SPEAKERS (Tentative) 

The Workshop registration desk will be open for;
11:30-18:00 on Friday, May 27.
9:30-12:00 on Saturday, May 28.

Your completed registration form should be sent to Prof. J. Murota for advanced registration. Payment must be made in Japanese yen by bank transfer or credit card. If paying by bank transfer, please pay your bank commission charge and send a copy of your receipt together with the registration form. Accepted credit cards are VISA and MasterCard. Personal checks and bank checks are NOT ACCEPTABLE.  

IMPORTANT DATES

　

Abstract Deadline	April 15, 2005
Notice of Acceptance	April 22, 2005

  CORRESPONDENCE

TRANSPORTATION

Sendai

Via Awaji Island, Hyogo (ICSI-4 Conference)

Via New Tokyo International Airport (Narita)

Via Sendai International Airport

From JR Sendai Station

LINK

Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4) Homepage
May 23(Mon)-26(Thu), 2005, Awaji Island, Hyogo, Japan

http://edmain.ed.kyushu-u.ac.jp/~icsi4/