I. 学術論文 / Journal

・２０１１年
・２０１０年
・２００９年
・２００８年
・２００７年
・２００６年
・２００５年
・２００４年
・２００３年
・２００２年
・２００１年
・２０００年
・１９９９年
・１９９８年

２０１１年

  1. "Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation", M. Sakuraba, K. Sugawara and J. Murota, Key Engineering Materials, Vol.470, pp.98-103, (2011), doi:10.4028/www.scientific.net/KEM.470.98.
  2. "Capture/Emission Process of Carriers in Heterointerface Traps Observed in the Transient Charge Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs", T. Tsuchiya, K. Yoshida, M. Sakuraba and J. Murota, Key Engineering Materials, Vol.470, pp.201-206, (2011), doi:10.4028/www.scientific.net/KEM.470.201.
  3. "Fabrication of High-Ge-Fraction Strained Si1-xGex/Si Hole Resonant Tunneling Diode Using Low-Temperature Si2H6 Reaction for Nanometer-Order Ultrathin Si Barriers", K. Takahashi, M. Sakuraba and J. Murota, Solid-State Electron., Vol.60, pp.112-115, (2011), doi:10.1016/j.sse.2011.01.040.
  4. "Silicon-germanium (SiGe) crystal growth using chemical vapour deposition", B. Tillack and J. Murota, Chapter 6 in "Silicon-germanium (SiGe) nanostructures: Production, properties and applications in electronics", ed. Y. Shiraki and N. Usami, (Woodhead Publishing Ltd., Cambridge, UK, 2011 Feb.), pp.117-146 (2011).
  5. "Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth", J. Murota, M. Sakuraba and B. Tillack, J. Nanosci. Nanotechnol., Vol.11, pp.8348-8353 (2011), doi:10.1166/jnn.2011.5052.
  6. "Behavior of N Atoms after Thermal Nitridation of Si1-xGex Surface", T. Kawashima, M. Sakuraba, B. Tillack and J. Murota, Thin Solid Films, Vol.520, pp.3392-3396 (2012), doi:10.1016/j.tsf.2011.10.108.
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２０１０年

  1. "B atomic layer doping of Ge", Y. Yamamoto, K. Koepke, R. Kurps, J. Murota and B. Tillack, Thin Solid Films, Vol.518, pp.S44-S47, (2010), doi:10.1016/j.tsf.2009.10.052.
  2. "Electrical Characteristics of Thermal CVD B-Doped Si Films on Highly Strained Si Epitaxially Grown on Ge(100) by Plasma CVD without Substrate Heating", K. Sugawara, M. Sakuraba and J. Murota, Thin Solid Films, Vol.518, pp.S57-S61, (2010), doi:10.1016/j.tsf.2009.10.055.
  3. "Heavy Atomic-Layer Doping of Nitrogen in Si1-xGex Film Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD", T. Kawashima, M. Sakuraba, B. Tillack and J. Murota, Thin Solid Films, Vol.518, pp.S62-S64, (2010), doi:10.1016/j.tsf.2009.10.056.
  4. "Heavy B Atomic-Layer Doping in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Plasma CVD", T. Nosaka, M. Sakuraba, B. Tillack and J. Murota, Thin Solid Films, Vol.518, pp.S140-S142, (2010), doi:10.1016/j.tsf.2009.10.073.
  5. "Heavy Carbon Atomic-Layer Doping at Si1-xGex/Si Heterointerface", T. Hirano, M. Sakuraba, B. Tillack and J. Murota, Thin Solid Films, Vol.518, pp.S222-S225, (2010), doi:10.1016/j.tsf.2009.10.093.
  6. "Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic Layer Doping", Y. Chiba, M. Sakuraba, B. Tillack and J. Murota, Thin Solid Films, Vol.518, pp.S231-S233, (2010), doi:10.1016/j.tsf.2009.10.095.
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２００９年

  1. "Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System", H. Tanno, M. Sakuraba, B. Tillack and J. Murota, Solid-State Electron., Vol.53, pp.877-879 (2009), doi:10.1016/j.sse.2009.04.015.
  2. "Improvement in Negative Differential Conductance Characteristics of Hole Resonant-Tunneling Diodes with High Ge Fraction Si/Strained Si1-xGex/Si(100) Heterostructure", T. Seo, K. Takahashi, M. Sakuraba and J. Murota, Solid-State Electron., Vol.53, pp.912-915 (2009), doi:10.1016/j.sse.2009.04.016.
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２００８年

  1. "Behavior of N Atoms in Atomic-Order Nitrided Si0.5Ge0.5(100)", N. Akiyama, M. Sakuraba, B. Tillack and J. Murota, Appl. Surf. Sci., Vol.254, No.19, pp.6021-6024 (2008), doi:10.1016/j.apsusc.2008.02.125.
  2. "Heavy Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition", H. Tanno, M. Sakuraba, B. Tillack and J. Murota, Appl. Surf. Sci., Vol.254, No.19, pp.6086-6089 (2008), doi:10.1016/j.apsusc.2008.02.132.
  3. "Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System", T. Yokogawa, K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii and H. Kurokawa, Appl. Surf. Sci., Vol.254, No.19, pp.6090-6093 (2008), doi:10.1016/j.apsusc.2008.02.131.
  4. "Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si1-xGex/Si(100) Heterostructure", T. Seo, M. Sakuraba and J. Murota, Appl. Surf. Sci., Vol.254, No.19, pp.6265-6267 (2008), doi:10.1016/j.apsusc.2008.02.153.
  5. "Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD", M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota, Thin Solid Films, Vol.517, pp.10-13, (2008), doi:10.1016/j.tsf.2008.08.028.
  6. "Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si1-xGex/Si(100) Heterostructure", T. Seo, M. Sakuraba and J. Murota, Thin Solid Films, Vol.517, pp.110-112, (2008), doi:10.1016/j.tsf.2008.08.037.
  7. "Structural Change of Atomic-Order Nitride Formed on Si1-xGex(100) and Ge(100) by Heat Treatment", N. Akiyama, M. Sakuraba, B.Tillack and J. Murota, Thin Solid Films, Vol.517, pp.219-221, (2008), doi:10.1016/j.tsf.2008.08.007.
  8. "Si Epitaxial Growth on Self-Limitedly B Adsorbed Si1-xGex(100) by Ultraclean Low-Pressure CVD System", K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii and H. Kurokawa, Thin Solid Films, Vol.517, pp.229-231, (2008), doi:10.1016/j.tsf.2008.08.012.
  9. "Local Strain in Si/Si0.6Ge0.4/Si(100) Heterostructures by Stripe-Shape Patterning", J. Uhm, M. Sakuraba and J. Murota, Thin Solid Films, Vol.517, pp.300-302, (2008), doi:10.1016/j.tsf.2008.08.094.
  10. "High Ge Fraction Intrinsic SiGe-Heterochannel MOSFETs with Embedded SiGe Source/Drain Electrode Formed by In-Situ Doped Selective CVD Epitaxial Growth", S. Takehiro, M. Sakuraba, T. Tsuchiya and J. Murota, Thin Solid Films, Vol.517, pp.346-349, (2008), doi:10.1016/j.tsf.2008.08.040.
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２００７年

  1. "Carbon doping effect on strain relaxation during Si1-xGexCy epitaxial growth on Si(100) at 500 ℃", H. Nitta, M. Sakuraba and J. Murota, Semicond. Sci. Technol., Vol.22, pp.S5-S8, (2007).
  2. "Strain control and electrical properties of stripe patterned Si/Si1-xGex/Si(100) heterostructures", J. Uhm, M. Sakuraba and J. Murota, Semicond. Sci. Technol., Vol.22, pp.S33-S37, (2007).
  3. "Hole tunneling properties in resonant tunneling diodes with Si/Strained Si0.8Ge0.2　heterostructures grown on Si(100) by low-temperature ultraclean LPCVD", R. Ito, M. Sakuraba and J. Murota, Semicond. Sci. Technol., Vol.22, pp.S38-S41, (2007).
  4. "Epitaxial growth of highly strained Si on relaxed Ge/Si(100) using ECR plasma CVD without substrate heating", K. Sugawara, M. Sakuraba and J. Murota, Semicond. Sci. Technol., Vol.22, pp.S42-S45, (2007).
  5. "Epitaxial growth of P atomic layer doped Si film by alternate surface reaction of PH3 and Si2H6 on strained Si1-xGex/Si(100) in ultraclean low pressure CVD", Y. Chiba, M. Sakuraba and J. Murota, Semicond. Sci. Technol., Vol.22, pp.S118-S122, (2007).
  6. "Hot Carrier Degradation of SiGe/Si Heterointerface and Experimental Estimation of Density of Locally Generated Heterointerface Traps", T. Tsuchiya, S. Mishima, M. Sakuraba and J. Murota, Jpn. J. Appl. Phys., Vol.46, No.8A, pp.5015-5020, (2007).
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２００６年

  1. "BドープSiGe選択CVD成長により形成された極浅ソース・ドレインと高Ge比率歪SiGeヘテロチャネルを有する高性能pMOSFET",
    竹廣忍，櫻庭政夫，室田淳一，土屋敏章 電気学会論文誌C，電気学会，Vol.126, No.9, pp.1079-1082, (2006).
    ("High Performance pMOSFETs with High Ge Fraction Strained SiGe-heterostructure-channel and Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD", S. Takehiro, M. Sakuraba, J. Murota and T. Tsuchiya, IEEJ Trans. Electron., Info. and Syst. (The Institute of Electrical Engineers of Japan), Vol.126, No.9, pp.1079-1082, (2006, in Japanese).) [Translated Version in English, Electr. Eng. Jpn., Vol.165, No.3, pp.46-50 (2008).]
  2. "SiGe/SiヘテロMOSFETにおけるホットキャリアによるヘテロ界面準位の発生",
    土屋敏章，櫻庭政夫，室田淳一， 電気学会論文誌C，電気学会，Vol.126, No.9, pp. 1101-1106, (2006).
    ("Hetero-Interface-Trap Generation due to Hot Carriers in SiGe/Si-Hetero-MOSFETs", T. Tsuchiya, M. Sakuraba and J. Murota, IEEJ Trans. Electron., Info. and Syst. (The Institute of Electrical Engineers of Japan), Vol.126, No.9, pp.1101-1106, (2006, in Japanese).)
  3. "Effect of Grain Boundary on Electrical Characteristics in B- and P-Doped Polycrystalline Si1-x-yGexCy Film Deposited by Ultraclean LPCVD", H. Shim, M. Sakuraba and J. Murota, Thin Solid Films, Vol.508, pp.36-39, (2006).
  4. "Carbon Effect on Strain Compensation in Si1-x-yGexCy Films Epitaxially Grown on Si(100)", H. Nitta, J. Tanabe, M. Sakuraba and J. Murota, Thin Solid Films, Vol.508, pp.140-142, (2006).
  5. "Thermal Effect on Strain Relaxation in Ge Films Epitaxially Grown on Si(100) Using ECR Plasma CVD", K. Sugawara, M. Sakuraba and J. Murota, Thin Solid Films, Vol.508, pp.143-146, (2006).
  6. "Strain Relaxation by Stripe Patterning in Si/Si1-xGex/Si(100) Hetereostructures", J. Uhm, M. Sakuraba and J. Murota, Thin Solid Films, Vol.508, pp.239-242, (2006).
  7. "Atomic layer processing for doping of SiGe", B. Tillack, Y. Yamamoto, D. Bolze, B. Heinemann, H. Ruecker, D. Knoll, J. Murota and W. Mehr, Thin Solid Films, Vol.508, pp.279-283, (2006).
  8. "Surface reaction and B Atom Segregation in ECR Chlorine Plasma Etching of B-Doped Si1-xGex Epitaxial Films", H.-S. Cho, M. Sakuraba and J. Murota, Thin Solid Films, Vol.508, pp.301-304, (2006).
  9. "Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs", T. Tsuchiya, M. Sakuraba, and J. Murota, Thin Solid Films, Vol.508, pp.326-328, (2006).
  10. "Photo Detection Characteristics of Si/Si1-xGex/Si p-i-n Diodes Integrated with Optical Waveguides", A. Yamada, M. Sakuraba and J. Murota, Thin Solid Films, Vol.508, pp.399-401, (2006).
  11. "Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition" (Invited Review Paper), J. Murota, M. Sakuraba and B. Tillack, Jpn. J. Appl. Phys., Vol.45, No.9A, pp.6767-6785, (2006).
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２００５年

  1. "Atomically Controlled Ge Epitaxial Growth on Si(100) in Ar Plasma Enhanced GeH4 Reaction", K. Sugawara, M. Sakuraba and J. Murota, Mat. Sci. Semiconductor Processing, Vol. 8, pp. 69-72, (2005).
  2. "Electrical Properties of W Delta Doped Si Epitaxial Films Grown on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition", T. Kurosawa, T. Komatsu, M. Sakuraba and J. Murota, Mat. Sci. Semiconductor Processing, Vol. 8, pp. 125-129, (2005).
  3. "Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition", Y. Jeong, M. Sakuraba and J. Murota, Mat. Sci. Semiconductor Processing, Vol. 8, pp. 121-124, (2005).
  4. "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma", M. Mori, T. Seino, D. Muto, M. Sakuraba and J. Murota, Mat. Sci. Semiconductor Processing, Vol. 8, pp. 65-68, (2005).
  5. "Sidewall Protection by Nitrogen and Oxygen in Poly-Si1-xGex Anisotropic Etching Using Cl2/N2/O2 Plasma", H.-S. Cho, S. Takehiro, M. Sakuraba and J. Murota, Mat. Sci. Semiconductor Processing, Vol. 8, pp. 239-243, (2005).
  6. "Integration of Si p-i-n diodes for light emitter and detector with optical waveguides", Atsushi Yamada, Masao Sakuraba and Junichi Murota, Materials Science in Semiconductor Processing, Vol. 8, pp. 435-438, (2005).
  7. "Separation by bonding Si Islands (SBSI) for LSI applications", T. Yamazaki, S. Ohmi, S. Morita, H. Ohri, J. Murota, M. Sakuraba, H. Omi, Y. Takahashi and T. Sakai, Materials Science in Semiconductor Processing, Vol. 8, pp. 59-63, (2005).
  8. "SiGe系エピタキシャル成長とその原子層制御（解説）", 室田淳一，櫻庭政夫， 真空，日本真空協会，Vol.48，1月号，pp.8-12, (2005).
  9. "Separation by Bonding Si Islands for Advanced CMOS LSIs Application", T. Yamazaki, S. Ohmi, S. Morita, H. Ohri, J. Murota, M. Sakuraba, H. Ohmi and T. Sakai, IEICE Trans. Electron, Vol.E88-C, pp.656-661, (2005).
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２００４年

  1. "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth", D. Muto, M. Sakuraba, T. Seino and J. Murota, Appl. Surf. Sci., Vol.224, pp.210-214 , (2004).
  2. "Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(100)", M. Fujiu, K. Takahashi, M. Sakuraba and J. Murota, Appl. Surf. Sci., Vol.224, pp.206-209 , (2004).
  3. "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique", Y. Shimamune, M. Sakuraba and J. Murota, Appl. Surf. Sci., Vol.224, pp.202-205 , (2004).
  4. "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH3 and SiH4", Y. Jeong, M. Sakuraba and J. Murota, Appl. Surf. Sci., Vol.224, pp.197-201 , (2004).
  5. "Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment", J. Noh, S. Takehiro, M. Sakuraba and J. Murota, Appl. Surf. Sci., Vol.224, pp.77-81 , (2004).
  6. "In-situ B Doping of SiGe(C) Using BCl3 in Ultraclean Hot-Wall LPCVD", Y. Kunii, Y. Inokuchi, A. Moriya, H. Kurokawa and J. Murota, Appl. Surf. Sci., Vol.224, pp.68- 72, (2004).
  7. "Interfacial Reaction and Electrical Properties in Ni/Si and Ni/SiGe(C) Contacts", S. Zaima, O. Nakatsuka, A.Sakai, J. Murota and Y. Yasuda, Appl. Surf. Sci., Vol.224, pp.215-221 , (2004).
  8. "Proposal of a Multi-Layer Channel MOSFET: The Application of Selective Etching for Si/SiGe Stacked Layers", D. Sasaki, S. Ohmi, M. Sakuraba, J. Murota and T. Sakai, Appl. Surf. Sci., Vol.224, pp.270-273 , (2004).
  9. "Fabrication of 0.12μm pMOSFETs on High Ge Fraction Si/Si1-xGex/Si(100) Heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD", D. Lee, S. Takehiro, M. Sakuraba, J. Murota and T. Tsuchiya, Appl. Surf. Sci., Vol.224, pp.254-259 , (2004).
  10. "Atomically Controlled Technology for Future Si-Based Devices", J. Murota, M. Sakuraba and B. Tillack, Solid State Phenomena, Vol.95-96, pp.607-616, (2004).
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２００３年

  1. "Direct Measurements of Trap Density in a SiGe/Si Hetero-Interface and Correlation between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs", T. Tsuchiya, Y. Imada, and J. Murota, IEEE Trans. Electron Devices, Vol. 50, pp. 2507-2512, (2003).
  2. "Atomic-layer doping in Si by alternately supplied NH3 and SiH4", Y. Jeong, M. Sakuraba and J. Murota, Appl. Phys. Lett., Vol.82, pp.3472-3474, (2003).
  3. "Si epitaxial growth on SiH3CH3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment", K. Takahashi, M. Fujiu, M. Sakuraba, J. Murota, Appl. Surf. Sci., Vol.212-213, pp.193-196, (2003) .
  4. "Si atomic layer-by-layer epitaxial growth process using alternate exposure of Si(1 0 0) to SiH4 and to Ar plasma", M. Sakuraba, D. Muto, T. Seino, J. Murota, Appl. Surf. Sci., Vol.212-213, pp.197-200, (2003) .
  5. "Work function of impurity-doped polycrystalline Si1-x-yGexCy film deposited by ultraclean low-pressure CVD", H. Shim, M. Sakuraba, T. Tsuchiya, J. Murota, Appl. Surf. Sci., Vol.212-213, pp.209-212, (2003) .
  6. "Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer", J. Noh, M. Sakuraba, J. Murota, S. Zaima, Y. Yasuda, Appl. Surf. Sci., Vol.212-213, pp.679-683, (2003) .
  7. "W delta doping in Si(1 0 0) using ultraclean low-pressure CVD", T. Kanaya, M. Sakuraba, J. Murota, Appl. Surf. Sci., Vol.212-213, pp.684-688, (2003) .
  8. "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH3 and SiH4", Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota, Rapid Thermal Processing for Future Semiconductor Devices, pp. 145-150, (2003).
  9. "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH4 Reaction", Y. Jeong, M. Sakuraba, T. Matsuura and J.Murota, Rapid Thermal Processing for Future Semiconductor Devices, pp. 139-144, (2003).
  10. "Type and charge states of point defects in heavily As- and B-doped silicon", Y. Nakabayashi, H. I. Osman, K. Yokota, K. Toyonaga, S. Matsumoto, J. Murota, K.Wada, T. Abe, Materials Science in Semiconductor Processing 6, pp.15-19, (2003).
  11. "Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure 30Silicon/Natural Silicon Heterostructures", Y. Nakabayashi, Hirman I. Osman, K. Toyonaga, K. Yokota, S. Matsumoto, J. Murota, K.Wada and T. Abe, Jpn. J. Appl. Phys., Vol.42, Part 1, No.6A, pp.3304-3310, (2003).
  12. "Transient processes and structural transformations in SixGe1-x layers during oxygen implantation and sputtering", D. Krueger, A. A. Efremov, J. Murota, B. Tillack, R. Kurps and G. Ph. Romanova, Appl.Surf.Sci., Vol.203-204, pp.285-289, (2003).
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２００２年

  1. "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si1-xGex CVD",
    T. Yamashiro, T. Kikuchi, M. Ishii, F. Honma, M. Sakuraba, T. Matsuura, J. Murota and T. Tsuchiya,
    Mat. Sci. Eng. B, Vol. 89, pp.120-124, (2002).
  2. "Study on Solid-Phase Reactions in Ti/p+-Si1-x-yGexCy/Si(100) Contacts,"
    A. Tobioka, Y. Tsuchiya, H. Ikeda, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda
    Mat. Sci. Eng. B, Vol.89, pp. 373-377, (2002).
  3. "Thermal Effects in Atomic-Order Nitridation of Si by a Nitrogen Plasma",
    T. Seino, D. Muto, T. Matsuura and J. Murota,
    J. Vac. Sci. Technol. B, Vol.20, pp.1431-1435, (2002).
  4. "Oxygen beam SIMS depth profiling of Si1-xGex layers:transient processes",
    D. Krueger, A.A. Efremov, J. Murota, R. Kurps, E. Bugiel, B. Tillack and G.Ph. Romanova,
    Surf.Interface Anal., Vol.33, pp.663-671, (2002).
  5. "Atomically controlled processing for group Ⅳ semiconductors",
    J. Murota, T. Matsuura, M. Sakuraba,
    Surf. Interface Anal., Vol.34, pp.423-431, (2002).
  6. "Atomic-order nitridation of SiO2 by nitrogen plasma",
    T. Seino, T. Matsuura, J. Murota,
    Surf. Interface Anal., Vol.34, pp.451-455, (2002).
  7. "Thermal nitridation of ultrathin SiO2 on Si by NH3",
    O. Jintsugawa, M. Sakuraba, T. Matsuura, J. Murota,
    Surf. Interface Anal., Vol.34, pp.456-459, (2002).
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２００１年

  1. "Self-Diffusion in Extrinsic Silicon Using Isotopically Enriched 30Si Layer",
    Y. Nakabayashi, H. I. Osman, T. Segawa, K. Saito, S. Matsumoto, J. Murota, K. Wada and T. Abe,
    Jpn. J. Appl. Phys., Vol.40, pp.L181-L182, (2001).
  2. "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si",
    T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota,
    J. Vac. Sci. Technol. A, Vol.19, pp.1907-1911, (2001).
  3. "Phosphorus Doping in Si1-x-yGexCy Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH4-GeH4-CH3SiH3-PH3-H2 Gas System",
    D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura, J. Murota,
    Jpn. J. Appl. Phys., Vol.40, pp.2697-2700, (2001).
  4. "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma",
    T. Kanetsuna, T. Matsuura and J. Murota,
    J. Electrochem. Soc. Vol.148, pp.G420-G423, (2001).
  5. "CVD法によるSi1-x-yGexCyエピタキシャル成長とドーピング制御",
    室田淳一, 櫻庭政夫, 松浦孝,
    応用物理学会誌, 第70巻, 第9号, pp.1082-1086, (2001).
  6. "Epitaxial Growth of Heavily P-doped Si Films at 450oC by Alternately Supplied PH3 and SiH4",
    Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
    J. Phys. IV France, Vol.11, Pr3, pp.255-260, (2001).
  7. "Low-Frequency Noise in Si1-xGex p-Channel Metal Oxide Semiconductor Field-Effect Transistors",
    T. Tsuchiya, T. Matsuura and J. Murota,
    Jpn. J. Appl. Phys., Vol.40, pp.5290-5293, (2001).
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２０００年　

  1. "Contribution of Radicals and Ions in Atomic-Order Plasma Nitridation of Si",
    T. Seino, T. Matsuura and J. Murota,
    Appl. Phys. Lett., Vol.76, No.3, pp.342-344, (2000).
  2. "Observation of Sharp Current Peaks in Resonant Tunneling Diode with Strained Si0.6Ge0.4/Si(100) Grown by Low-Temperature Low-Pressure CVD",
    P. Han, M. Sakuraba, Y. C. Jeong, K. Bock, T. Matsuura and J. Murota,
    J. Crystal Growth, Vol.209, No.2-3, pp.315-320, (2000).
  3. "Surface Reaction of CH3SiH3 on Ge(100) and Si(100)",
    T. Takatsuka, M. Fujiu, M. Sakuraba, T. Matsuura and J. Murota,
    Appl. Surf. Sci., Vol.162-163, pp.156-160, (2000).
  4. "Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH3 Using an Ultraclean Low-Pressure Chemical Vapor Deposition",
    Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
    Appl. Surf. Sci., Vol.162-163, pp.390-394, (2000) .
  5. "Epitaxial Growth of Si1-x-yGexCy Film on Si(100) in a SiH4-GeH4-CH3SiH3 Reaction",
    A. Ichikawa, Y. Hirose, T. Ikeda, T. Noda, M. Fujiu, T. Takatsuka, A. Moriya, M. Sakuraba, T. Matsuura and J. Murota,
    Thin Solid Films, Vol.369, No.1-2, pp.167-170, (2000).
  6. "Segregation and Diffusion of Impurities from Doped Si1-xGex Films into Silicon",
    S. Kobayashi, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura and J. Murota,
    Thin Solid Films, Vol.369, No.1-2, pp.222-225, (2000).
  7. "Drain Leakage Current and Instability of Drain Current in Si/Si1-xGex MOSFETs",
    T. Tsuchiya, K. Goto, M. Sakuraba, T. Matsuura and J. Murota,
    Thin Solid Films, Vol.369, No.1-2, pp.379-382, (2000).
  8. "Contribution of Ions and Radicals in Etching of Si1-xGex Epitaxial Films Using an Electron-Cyclotron-Resonance Chlorine Plasma",
    H. Takeuchi, T. Matsuura and J. Murota,
    Appl. Phys. Lett., Vol.77, No.12, pp.1828-1830, (2000).
  9. "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si1-x-yGexCy Films Epitaxially Grown Using Ultraclean LPCVD",
    T. Noda, D. Lee, H. Shim, M. Sakuraba, T. Matsuura and J. Murota,
    Thin Solid Films, Vol.380, No.1-2, pp.57-60, (2000).
  10. "Atomic-Layer Doping in Si by Alternately Supplied PH3 and SiH4",
    Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
    Thin Solid Films, Vol.380, No.1-2, pp.134-136, (2000).
  11. "CVD Si1-xGexエピタキシャル成長とドーピング制御",
    室田淳一, 櫻庭政夫, 松浦孝,
    「日本結晶成長学会誌」, 日本結晶成長学会, Vol.27, No.4, pp.171-178, (2000).
  12. "Epitaxial Growth of Pure 30Si Layers on a Natural Si(100) Substrate Using Enriched 30SiH4",
    Y. Nakabayashi, T. Segawa, H. I. Osman, K. Saito, S. Matsumoto, J. Murota, K. Wada and T. Abe,
    Jpn. J. Appl. Phys., Vol.39, Part 2, No.11B, pp.L1133-L1134, (2000).
  13. "Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures",
    P. Han, C. Xue-Mei, M. Sakuraba, Y. C. Jeong, T. Matsuura and J. Murota,
    Chin. Phys. Lett., Vol.17, No.11, pp.844-846, (2000).
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１９９９年　　

  1. "Separation between Surface Adsorption and Reaction of NH3 on Si(100) by Flash Heating",
    T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota,
    Jpn. J. Appl. Phys., Vol.38, Part 1, No.1B, pp.515-517, (1999).
  2. "Doping and Electrical Characteristics of In Situ Heavily B-Doped Si1-xGex Films Epitaxially Grown Using Ultraclean LPCVD",
    A. Moriya, M. Sakuraba, T. Matsuura and J. Murota,
    Thin Solid Films, Vol.343-344, pp.541-544, (1999).
  3. "Atomic-Order Layer-by-Layer Role-Share Etching of Silicon Nitride Using an Electron Cyclotron Resonance Plasma",
    T. Matsuura, Y. Honda and J. Murota,
    Appl. Phys. Lett., Vol.74, No.23, pp.3573-3575, (1999).
  4. "Layer-by-Layer Growth of Silicon Nitride Films by NH3 and SiH4",
    T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota,
    J. Phys. IV France, Vol.9, pp.Pr8-333-Pr8-340, (1999).
  5. "H-Termination Effects on Initial Growth Characteristics of W on Si Using WF6 and SiH4 Gases",
    Y. Yamamoto,T. Matsuura and J. Murota,
    J. Phys. IV France, Vol.9, pp.Pr8-431-Pr8-436,(1999).
  6. "Segregation and Diffusion of Phosphorus from Doped Si1-xGex Films into Silicon",
    S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura and J. Murota,
    J. Appl. Phys., Vol.86, No.10, pp.5480-5483, (1999).
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１９９８年

  1. "Low-Temperature Reaction of CH4 on Si(100)",
    A. Izena, M. Sakuraba, T. Matsuura and J. Murota,
    J. Crystal Growth, Vol.188, No.1-4, pp.131-136, (1998).
  2. "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma",
    T. Matsuura, T. Sugiyama and J. Murota,
    Surf. Sci., Vol.402-404, pp.202-205, (1998).
  3. "Surface Reaction of Alternately Supplied WF6 and SiH4 Gases",
    Y. Yamamoto, T. Matsuura and J. Murota,
    Surf. Sci., Vol.408, No.1-3, pp.190-194, (1998).
  4. "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures",
    T. Watanabe, A. Ichikawa, M. Sakuraba, T. Matsuura and J. Murota,
    J. Electrochem. Soc., Vol.145, No.12, pp.4252-4256, (1998).
  5. "Si-C Atomic Bond and Electronic Band Structure of a Cubic Si1-yCy Alloy",
    Y. Fu, M. Willander, P. Han, T. Matsuura and J. Murota,
    Phys. Rev. B, Vol.58, No.12, pp.7717-7722, (1998).
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