"Atomically Controlled CVD Processing for Doping in Future Si-Based Devices" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, 2011 Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT), Hong Kong, China, Jun. 26-Jul. 1, 2011: ECS Trans., Vol.37, No.1 (Edited by Y. Kuo and G. Bersuker, The Electrochem. Soc., Pennington, NJ, 2011), pp.181-188 (2011).

"Behavior of N Atoms after Thermal Nitridation of Si_1-xGe_x Surface", T. Kawashima, M. Sakuraba, B. Tillack and J. Murota, 7th Int. Conf. on Si Epitaxy and Heterostructures (ICSI-7), Leuven, Belgium, Aug. 28-Sep. 1, 2011, Abs.No.1171.

"Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth", J. Murota, M. Sakuraba and B. Tillack, 18th Euro. Conf. on Chemical Vapor Deposition (EuroCVD 18), County Cork, Ireland, Sep. 4-9, 2011, No.13.2.

"Atomically Controlled Formation of Strained Si_1-xGe_x/Si Quantum Heterostructure for Room-Temperature Resonant Tunneling Diode", M. Sakuraba and J. Murota, Symp. E9: ULSI Process Integration 7 (220th Meeting of the Electrochem. Soc.), Boston, USA, Oct. 9-14, 2011: ECS Trans., Vol.41, No.7 (Edited by C. Claeys et al., The Electrochem. Soc., Pennington, NJ, 2011), pp.309-314 (2011).

"Atomically Controlled Plasma Processing for Quantum Heterointegration of Group IV Semiconductors", M. Sakuraba and J. Murota, Symp. E9: ULSI Process Integration 7 (220th Meeting of the Electrochem. Soc.), Boston, USA, Oct. 9-14, 2011: ECS Trans., Vol.41, No.7 (Edited by C. Claeys et al., The Electrochem. Soc., Pennington, NJ, 2011), pp.337-343 (2011).

"Atomic Level Control for Group IV Semiconductor Processing" (Invited Paper), B. Tillack, Y. Yamamoto and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.I-05, pp.9-10.

"Effects of 193 nm Excimer laser radiation on SiO₂/Si/SiGe heterostructures grown on s-SOI substrates" (Invited Paper), S. Chiussi, J.C. Conde, A. Benedetti, C. Serra, M. Sakuraba and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.I-11, pp.65-66.

"Epitaxial Growth of Group IV Semiconductor Nanostructures Using Atomically Controlled Plasma Processing" (Invited Paper), M. Sakuraba, T. Nosaka, K. Sugawara and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.I-13, pp.69-70.

"Adsorption and Desorption of Hydrogen on Si(100) in H₂ or Ar Heat Treatment", A. Uto, M. Sakuraba, M. Caymax and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.P-04, pp.25-26.

"Mobility Enhancement by Highly Strained Si on Relaxed Ge(100) Buffer Grown by Plasma CVD", K. Sugawara, M. Sakuraba and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.P-11, pp.39-40.

"Atomic Level Control of B doping in Ge", Y. Yamamoto, R. Kurps, J. Murota and B. Tillack, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.P-17, pp.51-52.

"Heavy P Atomic-Layer Doping between Si and Si_0.3Ge_0.7(100) by Ultraclean Low Pressure CVD", Y. Chiba, M. Sakuraba, B. Tillack and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.P-19, pp.55-56.

"Evaluation of Valence Band Offsets for SiO₂/Si/SiGe_0.5/Si Heterostructures Using by X-ray Photoelectron Spectroscopy", A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.P-20, pp.57-58.

"Effect of Heavy Carbon Atomic-Layer Doping upon Intermixing and Strain at Si_1-xGe_x/Si(100) Heterointerface", T. Hirano, M. Sakuraba, B. Tillack and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.P-21, pp.59-60.

"N Atomic-Layer Doping in Si/Si_1-xGe_x/Si(100) Heterostructure Growth by Low-Pressure CVD", T. Kawashima , M. Sakuraba, B. Tillack and J. Murota, 5th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Jan. 29-30, 2010, Abs.No.P-22, pp.61-62.

"Determination of Valence Band Alignment in SiO₂/Si/Si_0.55Ge_0.45/Si(100) Heterostructures", A. Ohta, K. Makihara, S. Miyazaki, M. Sakuraba and J. Murota, 5th Int. SiGe Technology and Device Meeting (ISTDM2010), Stockholm, Sweden, May 24-26, 2010, Abs.No.1910265.

"Evolution of the Hydrogen Terminated Structure of the Si(100) Surface and Its Interaction with H₂ at 20-800^oC", A. Uto, M. Sakuraba, M. Caymax and J. Murota, 5th Int. SiGe Technology and Device Meeting (ISTDM2010), Stockholm, Sweden, May 24-26, 2010, Abs.No.1918397.

"In-Situ Heavy B-Doped Si Epitaxial Growth on Tensile-Strained Si(100) by Ultraclean Low-Pressure CVD Using SiH₄ and B₂H₆", M. Nagato, M. Sakuraba, J. Murota, B. Tillack, Y. Inokuchi, Y. Kunii and H. Kurokawa, 5th Int. SiGe Technology and Device Meeting (ISTDM2010), Stockholm, Sweden, May 24-26, 2010, Abs.No.1918419.

"Influence of Strain on P Atomic-Layer Doping Characteristics in Strained Si_0.3Ge_0.7/Si(100) Heterostructures", Y. Chiba, M. Sakuraba, B. Tillack and J. Murota, 5th Int. SiGe Technology and Device Meeting (ISTDM2010), Stockholm, Sweden, May 24-26, 2010, Abs.No.1918431.

"Fabrication of High-Ge-Fraction Strained Si_1-xGe_x/Si Hole Resonant Tunneling Diode Using Low-Temperature Si₂H₆ Reaction for Nanometer-Order Ultrathin Si Barriers", K. Takahashi, M. Sakuraba and J. Murota, 5th Int. SiGe Technology and Device Meeting (ISTDM2010), Stockholm, Sweden, May 24-26, 2010, Abs.No.1918443.

"Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation", M. Sakuraba, K. Sugawara and J. Murota, Int. Symp. on Technology Evolution for Silicon Nano-Eelectronics (ISTESNE), Tokyo, Japan, Jun. 3-5, 2010, p.36.

"Room-Temperature Resonant Tunneling Diode with Nanometer-Order High-Ge-Fraction Strained Si_1-xGe_x/Si Heterostructures on Si(100)", M. Sakuraba, K. Takahashi and J. Murota, Int. Symp. on Technology Evolution for Silicon Nano-Eelectronics (ISTESNE), Tokyo, Japan, Jun. 3-5, 2010, p.44.

"Atomic Control of Doping during Si Based Epitaxial Layer Growth Processes" (Invited Paper), B. Tillack, Y. Yamamoto and J. Murota, 4th SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symp. (218th Meeting of the Electrochem. Soc.), Las Vegas, USA, Oct. 10-15, 2010, Abs.No.1917: ECS Trans., Vol.33, No.6 (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2010), pp.603-614 (2010).

"Room-Temperature Resonant Tunneling Diode with High-Ge-Fraction Strained Si_1-xGe_x and Nanometer-Order Ultrathin Si", M. Sakuraba, K. Takahashi and J. Murota, 4th SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symp. (218th Meeting of the Electrochem. Soc.), Las Vegas, USA, Oct. 10-15, 2010, Abs.No.1895: ECS Trans., Vol.33, No.6 (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2010), pp.379-387 (2010).

"Phosphorus Atomic Layer Doping in Si Using PH₃", Y. Yamamoto, J. Murota and B. Tillack, 4th SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symp. (218th Meeting of the Electrochem. Soc.), Las Vegas, USA, Oct. 10-15, 2010, Abs.No.1958: ECS Trans., Vol.33, No.6 (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2010), pp.995-1002 (2010).

"Atomically Controlled Processing in Strained Si-Based CVD Epitaxial Growth" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010), Shanghai, China, Nov. 1-4, 2010, Proc.No.I12_05.

"Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductors" (Invited Paper), M. Sakuraba and J. Murota, Int. Conf. on Solid-State and Integrated Circuit Technology (ICSICT-2010), Shanghai, China, Nov. 1-4, 2010, Proc.No.I12_07.

"Atomically controlled processing in strained Si-based CVD epitaxial growth" (Invited Paper), J. Murota and M. Sakuraba, 3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010), Albi, France, Dec. 7-11, 2010, p.55.

"Atomically controlled plasma processing for group IV quantum heterointegration", M. Sakuraba and J. Murota, 3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010), Albi, France, Dec. 7-11, 2010, No.P-12, p.116.

"Formation of room-temperature resonant-tunneling quantum heterostructures with high-Ge-fraction strained Si_1-xGe_x/Si(100)", M. Sakuraba and J. Murota, 3rd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2010), Albi, France, Dec. 7-11, 2010, No.P-13, p.117.

"Atomic Layer Doping of B in Ge", Y. Yamamoto, K. Koepke, R. Kurps, J. Murota and B. Tillack, 6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, USA, May 17-22, 2009, No.3A.3, pp.74-75.

"Electrical Characteristics of B-Doped Highly Strained Si Films Epitaxially Grown on Ge(100) Formed by Plasma CVD", K. Sugawara, M. Sakuraba and J. Murota, 6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, USA, May 17-22, 2009, No.3B.3, pp.84-85.

"Heavy Nitrogen Atomic-Layer Doping of Si_1-xGe_x Epitaxially Grown on Si(100) by Ultraclean Low-Pressure CVD", T. Kawashima, M. Sakuraba, B. Tillack and J. Murota, 6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, USA, May 17-22, 2009, No.3B.4, pp.86-87.

"Heavily B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma", T. Nosaka, M. Sakuraba, B. Tillack and J. Murota, 6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, USA, May 17-22, 2009, No.1P.11, pp.P21-P22.

"Heavy Carbon Atomic-Layer Doping at Si_1-xGe_x/Si Heterointerface", T. Hirano, M. Sakuraba, B. Tillack and J. Murota, 6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, USA, May 17-22, 2009, No.3P.3, pp.P90-P91.

"Impact of Si Cap Layer Growth on Surface Segregation of P Incorporated by Atomic-Layer Doping of Strained Si_1-xGe_x", Y. Chiba, M. Sakuraba, B. Tillack and J. Murota, 6th Int. Conf. on Silicon Epitaxy and Heterostructures (ICSI-6), Los Angeles, USA, May 17-22, 2009, No.3P.8, pp.88-89.

"Atomically Controlled Processing for Group-IV Semiconductors" (Invited Paper), J. Murota and M. Sakuraba, 2009 Int. Conf. on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT), Xi'an, China, Jul. 5-10, 2009: ECS Trans., Vol.22, No.1 (Edited by Y. Kuo, The Electrochem. Soc., Pennington, NJ, 2009), pp.111-120 (2009).

"Control of Group IV Semiconductor Processing on Atomic Scale" (Keynote Lecture), B. Tillack, Y. Yamamoto and J. Murota, 1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09), Vigo, Spain, Sep. 20-23, 2009, pp.71-72.

"Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_1-xGe_x Epitaxially Grown on Si(100)" (Invited Paper), M. Sakuraba and J. Murota, 1st Int. Workshop on Si Based Nano-Electronics and -Photonics (SiNEP-09), Vigo, Spain, Sep. 20-23, 2009, pp.81-82.

"Atomically Controlled CVD Processing for Doping of Si-Based Group IV Semiconductors" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, Symp. E10: ULSI Process Integration 6 (216th Meeting of the Electrochem. Soc.), Vienna, Austria, Oct. 4-9, 2009, Abs.No.2360: ECS Trans., Vol.25, No.7 (Edited by C. Claeys et al., The Electrochem. Soc., Pennington, NJ, 2009), pp.177-184 (2009).

"Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures", M. Sakuraba, K. Sugawara and J. Murota, Symp. E10: ULSI Process Integration 6 (216th Meeting of the Electrochem. Soc.), Vienna, Austria, Oct. 4-9, 2009, Abst.No.2367: ECS Trans., Vol.25, No.7 (Edited by C. Claeys et al., The Electrochem. Soc., Pennington, NJ, 2009), pp.229-236 (2009).

"Atomically Controlled Processing for Future Si-Based Devices" (Invited Paper), J. Murota and M. Sakuraba, 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2009), Sendai, Japan, Nov. 29-Dec. 3, 2009, Abs.No.O-4, p.22.

"Atomically Controlled Plasma Processing for Epitaxial Growth of Group IV Semiconductor Nanostructures", K. Sugawara, M. Sakuraba and J. Murota, 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2009), Sendai, Japan, Nov. 29-Dec. 3, 2009, Abs.No.P-70, p.131.

"Resonant Tunneling Diodes with Highly Strained Heterostructures of Si/Si_1-xGe_x Epitaxially Grown on Si(100)", M. Sakuraba and J. Murota, 2nd French Research Organizations-Tohoku University Joint Workshop on Frontier Materials (FRONTIER 2009), Sendai, Japan, Nov. 29-Dec. 3, 2009, Abs.No.P-71, p.132.

"Transient Charge-Pumping Characteristics Related to Heterointerface Traps in SiGe/Si-Hetero-Channel pMOSFETs", T. Tsuchiya, K. Yoshida, M. Sakuraba and J. Murota, 4th Int. SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May 11-14, 2008, No.Tue-S5-04, pp.64-65.

"Improvement in Negative Differential Conductance Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_1-xGe_x/Si(100) Heterostructure", T. Seo, K. Takahashi, M. Sakuraba and J. Murota, 4th Int. SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May 11-14, 2008, No.Tue-S5-05, pp.66-67.

"Heavy B Atomic-Layer Doping Characteristics in Si Epitaxial Growth on B Adsorbed Si(100) by Ultraclean Low-Pressure CVD System", H. Tanno, M. Sakuraba, B. Tillack and J. Murota, 4th Int. SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May 11-14, 2008, No.Wed-S8-04, pp.100-101.

"Change of H-Termination on Wet-Cleaned Si(100) and Ge(100) by Heat-Treatment in H₂ or Ar", A. Uto, M. Sakuraba, M. Caymax and J. Murota, 4th Int. SiGe Technology and Device Meeting (ISTDM2008), Hsinchu, Taiwan, May 11-14, 2008, No.Mon-P1-51, pp.231-232.

"Atomically Controlled Processing for Impurity Doping in Si-Based CVD Epitaxial Growth" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, 8th Int. Conf. on Atomic Layer Deposition (ALD 2008), Bruges, Belgium, Jun. 29-Jul. 2, 2008, No. TueM1-4.

"Transition from Epitaxial to Polycrystalline Selective Si Deposition Induced by B-Atomic Layer Doping", Y. Yamamoto, K. Koepke, O. Fursenko, G. Weidner, J. Murota and B. Tillack, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.P-02, pp.25-26.

"Application of Relaxed Ge/Si(100) by ECR Plasma CVD to Highly Strained B Doped Si", K. Sugawara, M. Sakuraba and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.P-10, pp.41-42.

"P Atomic-Layer Doping in Heteroepitaxial Growth of Si on Strained Si_1-xGe_x/Si(100) by Ultraclean Low-Pressure CVD", Y. Chiba, M. Sakuraba and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.P-11, pp.43-44.

"Formation of Nitrogen Atomic-Layer Doped Si/Si_1-xGe_x/Si(100) Epitaxially Grown by Ultraclean Low-Pressure CVD", T. Kawashima, M. Sakuraba and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.P-12, pp.45-46.

"Epitaxial Growth of B Atomic-Layer Doped Si Film on Si(100) Using Electron-Cyclotron-Resonance Ar Plasma", T. Nosaka, M. Sakuraba and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.P-13, pp.47-48.

"Hole Resonant Tunneling Diodes Utilizing High Ge Fraction (x>0.5) Si/Strained Si_1-xGe_x/Si(100) Heterostructure with Improved Performance at Higher Temperature above 200 K", K. Takahashi, T. Seo, M. Sakuraba and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.P-14, pp.49-50.

"Heat-Treatment Effect upon H-Terminated Structure Formed on Wet-Cleaned Si(100) and Ge(100)", A. Uto, M. Sakuraba, M. Caymax and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.P-15, pp.51-52.

"Transient Charge-Pumping Characteristics in SiGe/Si-Hetero-Channel MOSFETs", T. Tsuchiya, K. Yoshida, M. Sakuraba and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.Z-02, pp.55-56.

"Fabrication of Hole Resonant Tunneling Diodes Utilizing Nanometer-Order Strained SiGe/Si(100) Heterostructures with High Ge Fraction", M. Sakuraba, R. Ito, T. Seo, and J. Murota, 4th Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Sep. 25-27, 2008, No.Z-12, pp.75-76.

"Selective Polycrystalline Si Deposition on Epitaxial Si induced by B-Atomic Layer Doping", Y. Yamamoto, K. Koepke, O. Fursenko, G. Weidner, J. Murota, and B. Tillack, 3rd Int. SiGe, Ge, & Related Compounds Symp. (2008 Joint Int. Meeting (PRiME 2008) of 214th Meeting of The Electrochem. Soc. and The Electrochem. Soc. Japan), Honolulu, Hawaii, Oct. 13-17, 2008, No.8.5: ECS Trans., Vol.16, No.10 (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2008), pp.503-510 (2008).

"Atomically Controlled CVD Processing for Future Si-Based Devices" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, 9th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2008), Beijing, China, Oct. 20-23, 2008, No.E6.7.

"Atomically Controlled Processing in Si-Based CVD Epitaxial Growth" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008, No.ZI-3.

"Nitrogen Atomic-Layer Doping in Nanometer-Order Heterostructure of Si/Si_1-xGe_x/Si(100) by Ultraclean Low-Pressure CVD", T. Kawashima, M. Sakuraba and J. Murota, Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008, No.ZO-4.

"Heavily B Atomic-Layer Doping in Si Epitaxial Growth Using Electron-Cyclotron-Resonance Plasma", T. Nosaka, M. Sakuraba and J. Murota, Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008, No.ZO-5.

"Epitaxial Growth of Highly Strained B Doped Si on Relaxed Ge/Si(100)", K. Sugawara, M. Sakuraba and J. Murota, Symp. Z:"Material Science and Process Technologies for Advanced Nano-Electronic Devices", Int. Union of Mat. Res. Soc. - Int. Conf. in Asia 2008 (IUMRS-ICA 2008), Nagoya, Japan, Dec. 9-13, 2008, No.ZP-9.

"Atomically Controlled Technology for Group IV Semiconductors" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, 4th Int. Workshop on Nanoscale Semiconductor Devices, Jeju, Korea, Apr. 5-6, 2007, No.I-10.

"Very Low-Temperature Epitaxial Growth of Silicon and Germanium Using Plasma-Assisted CVD" (Invited Paper), M. Sakuraba, D. Muto, M. Mori, K. Sugawara and J. Murota, 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, No.S1-I3.

"Reliability and instability of a SiGe/Si-hetero-interface in hetero-channel MOSFETs" (Invited Paper), T. Tsuchiya, M. Sakuraba and J. Murota, 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, No.S4-I22.

"Impact of Ge Fraction Modulation upon Electrical Characteristics of Hole Resonant Tunneling Diodes with Si/Strained Si_1-xGe_x/Si(100) Heterostructure", T. Seo, M. Sakuraba and J. Murota, 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, No.S4-O41.

"Structural Change of Atomic-Order Nitride Formed on Si_1-xGe_x(100) and Ge(100) by Heat Treatment", N. Akiyama, M. Sakuraba, B. Tillack and J. Murota, 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, No.21P 1-8.

"Si Epitaxial Growth on Self-Limitedly B Adsorbed Si_1-xGe_x(100) by Ultraclean Low-Pressure CVD System", K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii and H. Kurokawa, 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, No.21P 1-12.

"Local Strain in Si/Si_0.6Ge_0.4/Si(100) Heterostructures by Stripe-Shape Patterning", J. Uhm, M. Sakuraba and J. Murota, 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, No.22P 2-13.

"High Ge fraction intrinsic SiGe-heterochannel MOSFETs with embedded SiGe source/drain electrode formed by in-situ doped selective CVD epitaxial growth", S. Takehiro, M. Sakuraba, T. Tsuchiya and J. Murota, 5th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-5), Marseille, France, May 20-24, 2007, No.22P 4-03.

"Strain Control of Si and Si_1-xGe_x Layers in the Si/Si_1-xGe_x/Si Heterostructures by Stripe-Shape Patterning for Future Si-Based Devices" (Invited Paper), J. Murota, J. Uhm and M. Sakuraba, Symp. E9: "ULSI Process Integration 5", 212th Meeting of the Electrochem. Soc., Washington, DC, USA, Oct. 7-12, 2007, Abst.No.1280: ECS Trans., Vol.11 (Edited by C. Claeys et al., The Electrochem. Soc., Pennington, NJ, 2007), pp.91-99 (2007).

"Fabrication of Hole Resonant Tunneling Diodes with Nanometer Order Heterostructures of Si/Strained Si_1-xGe_x Epitaxially Grown on Si(100)" (Invited Paper), M. Sakuraba, R. Ito, T. Seo and J. Murota, Symp. E9: "ULSI Process Integration 5", 212th Meeting of the Electrochem. Soc., Washington, DC, USA, Oct. 7-12, 2007, Abst.No.1283: ECS Trans., Vol.11 (Edited by C. Claeys et al., The Electrochem. Soc., Pennington, NJ, 2007), pp.131-139 (2007).

"Instability of a SiGe/Si-hetereo-interface in hetero-channel MOSFETs due to Joule heating" (Invited Paper), T. Tsuchiya, M. Sakuraba and J. Murota, 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Nov. 8-9, 2007, No.I-08, pp.17-18.

"Characterization of B Incorporation in B Atomic Layer Doping at Si/Ge(100) Heterointerface", T. Yokogawa, K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii and H. Kurokawa, 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Nov. 8-9, 2007, No.P-17, pp.53-54.

"Heat-Treatment Effect on Structure of Atomic-Order Nitrided Si_0.5Ge_0.5(100) Using Low Pressure CVD", N. Akiyama, M. Sakuraba, B. Tillack and J. Murota, 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Nov. 8-9, 2007, No.P-18, pp.55-56.

"Effect of Low-Temperature SiH₄ Exposure on Heavily Atomic-Layer Doping of B in Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure CVD", H. Tanno, M. Sakuraba, B. Tillack and J. Murota, 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Nov. 8-9, 2007, No.P-19, pp.57-58.

"Characterization of Temperature-Dependent Hole Resonant Tunneling Properties with High Ge Fraction (x>0.4) Si/Strained Si_1-xGe_x/Si(100) Heterostructure", T. Seo, M. Sakuraba and J. Murota, 3rd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Nov. 8-9, 2007, No.P-20, pp.59-60.

"Behavior of N Atoms on Atomic-Order Nitrided Si_0.5Ge_0.5(100)", N. Akiyama, M. Sakuraba, B. Tillack and J. Murota, 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V), Hachioji, Japan, Nov. 12-14, 2007, No.OA2-4, pp.71-72.

"Heavily Atomic-Layer Doping of B in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition", H. Tanno, M. Sakuraba, B. Tillack and J. Murota, 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V), Hachioji, Japan, Nov. 12-14, 2007, No.P-32, pp.151-152.

"Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction (x>0.4) Si/Strained Si_1-xGe_x/Si(100) Heterostructure", T. Seo, M. Sakuraba and J. Murota, 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V), Hachioji, Japan, Nov. 12-14, 2007, No.P-33, pp.153-154.

"Self-Limited Growth of Si on B Atomic-Layer Formed Ge(100) by Ultraclean Low-Pressure CVD System", T. Yokogawa, K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii and H. Kurokawa, 5th Int. Symp. Control of Semiconductor Interfaces (ISCSI-V), Hachioji, Japan, Nov. 12-14, 2007, No.P-37, pp.161-162.

"Silicon Self-Diffusion in Heavily B-Doped Si Using Highly Pure ³⁰Si Epitaxial Layer", S. Matsumoto, S. R. Aid, S. Seto, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada and T. Abe, ECS Trans., Vol.2, No.2, Silicon Materials Science and Technology X (Edited by H. Huff et al., The Electrochem. Soc., Pennington, NJ, 2006), pp.287-297 (2006). (Ext. Abs. Electrochem. Soc. Spring Meeting, Denver, Colorado, May 7-12, 2006, Abs.No. 528.)

"Carbon Doping Effect on Strain Relaxation during Si_1-x-yGe_xC_y Epitaxial Growth on Si(100) at 500 ℃", H. Nitta, M. Sakuraba and J. Murota, 3rd Int. SiGe Technol. and Device Meeting (ISTDM), Princeton, USA, May 15-17, 2006, Paper No.5P.24.

"Hole Tunneling Properties in Resonant Tunneling Diodes with Si/Strained Si_0.8Ge_0.2 Heterostructures Grown on Si(100) by Low-Temperature Ultraclean LPCVD", R. Ito, M. Sakuraba and J. Murota, 3rd Int. SiGe Technol. and Device Meeting (ISTDM), Princeton, USA, May 15-17, 2006, Paper No.5P.25.

"Epitaxial Growth of Highly Strained Si on Relaxed Ge/Si(100) Using ECR Plasma CVD without Substrate Heating", K. Sugawara, M. Sakuraba and J. Murota, 3rd Int. SiGe Technol. and Device Meeting (ISTDM), Princeton, USA, May 15-17, 2006, Paper No.5P.26.

"Epitaxial Growth of P Atomic Layer Doped Si Film by Alternate Surface Reaction of PH₃ and Si₂H₆ on Strained Si_1-xGe_x/Si(100) in Ultraclean Low Pressure CVD", Y. Chiba, M. Sakuraba and J. Murota, 3rd Int. SiGe Technol. and Device Meeting (ISTDM), Princeton, USA, May 15-17, 2006, Paper No.5P.27.　

"Strain Control and Electrical Properties of Stripe Patterned Si/Si_1-xGe_x/Si(100) Heterostructures", J. Uhm, M. Sakuraba and J. Murota, 3rd Int. SiGe Technol. and Device Meeting (ISTDM), Princeton, USA, May 15-17, 2006, Paper No.13B.4.

"Atomic-Order Si Nitride Formation on Ge(100) by Low-Pressure Chemical Vapor Deposition", N. Kanai, N. Akiyama, M. Sakuraba and J. Murota, Symp. L: Characterization of High-K Dielectric Materials, E-MRS 2006 Spring Meeting (IUMRS-ICEM 06), Nice, France, May 29-Jun. 2, 2006, Paper No.L-8b .

"Atomically Controlled Processing for Future Si-Based Devices" , J. Murota, M. Sakuraba and B. Tillack, 2006 Advanced Research Workshop on Future Trends in Microelectronics (FTM-5): Up the Nano Creek, Crete, Greece, Jun. 26-30, 2006.

"Quantitative Evaluation of Interface Traps in a Nanometer-Thick SiGe/Si Heterostructure in Hetero MOS Devices (Invited Paper)", T. Tsuchiya, M. Sakuraba and J. Murota, 2006 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, Sendai, Japan, Jul. 3-5, 2006, (IEICE Technical Report, The Institute of Electronics, Information and Communication Engineers), ED2006-61, SDM2006-69 (2006-7), pp.21-24.

"Strain Control of Stripe Patterned Si/Si_1-xGe_x/Si Heterostructures", J. Uhm, M. Sakuraba and J. Murota, 2nd Int. SiGe & Ge: Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting), Cancun, Mexico, Oct. 29-Nov. 3, 2006, Paper No.6.3.ECS Trans., Vol.3, No.7, SiGe and Ge: Materials, Processing, and Devices (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2006), pp.421-427 (2006).

"Development of High-Throughput Batch-Type Epitaxial Reactor" (Invited Paper), Y. Kunii, Y. Inokuchi, J. Wang, K. Yamamoto, A. Moriya, Y. Hashiba, H. Kurokawa and J. Murota, 2nd Int. SiGe & Ge: Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting), Cancun, Mexico, Oct. 29-Nov. 3, 2006, Paper No.13.2.ECS Trans., Vol.3, No.7, SiGe and Ge: Materials, Processing, and Devices (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2006), pp.841-847 (2006).

"A Study on B Atomic Layer Formation for B-Doped Si_1-xGe_x(100) Epitaxial Growth Using Ultraclean LPCVD System", K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii and H. Kurokawa, 2nd Int. SiGe & Ge: Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting), Cancun, Mexico, Oct. 29-Nov. 3, 2006, Paper No.13.4.ECS Trans., Vol.3, No.7, SiGe and Ge: Materials, Processing, and Devices (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2006), pp.861-866 (2006).

"Atomic-Order Thermal Nitridation of Si_1-xGe_x(100) at Low Temperatures by NH₃", N. Akiyama, M. Sakuraba and J. Murota, 2nd Int. SiGe & Ge: Materials, Processing, and Device Symp. (210th Electrochem. Soc. Meeting), Cancun, Mexico, Oct. 29-Nov. 3, 2006, Paper No.20.4. ECS Trans., Vol.3, No.7, SiGe and Ge: Materials, Processing, and Devices (Edited by D. Harame et al., The Electrochem. Soc., Pennington, NJ, 2006), pp.1205-1210 (2006).

"Hot-Carrier-Degradation of Hetero-Interface in SiGe/Si-Hetero-MOSFETs", T. Tsuchiya, M. Sakuraba and J. Murota,2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No. O-01.

"Epitaxial Growth of Group IV Semiconductor in ECR Plasma Enhanced CVD", M. Sakuraba, D. Muto, M Mori, K. Sugawara, J. Murota, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.O-09.

"Strain and Conductivity Behavior of Stripe Patterned Si/Si_1-xGe_x(100) Heterostructures", J. Uhm, M. Sakuraba and J. Murota, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.P-01.

"Fabrication of Sub-100-nm Gate-Length SiGe-Heterochannel MOSFETs with In-Situ Doped Selectively Epitaxial SiGe Source/Drain", S. Takehiro, M. Sakuraba, T. Tsuchiya J. Murota, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.P-02.

"B Atomic Layer Formation on Si_1-xGe_x(100) by Ultraclean LPCVD System", K. Ishibashi, M. Sakuraba, J. Murota, Y. Inokuchi, Y. Kunii, H. Kurokawa, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.P-16.

"Highly Strained-Si/Relaxed-Ge Epitaxial Growth on Si(100) by ECR Plasma CVD and Evaluation of Thermal Stability", K. Sugawara, M. Sakuraba and J. Murota, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.P-17.

"P atomic Layer Doping at Heterointerface of Epitaxial Si Layer and Si_1-xGe_x(100) Substrate by Alternate Surface Reaction of PH3 and Si2H6 in Ultraclean LPCVD", Y. Chiba, M. Sakuraba and J. Murota, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.P-27.

"Thermal Stability of Nitrided Si Atomic Layer on Ge(100) Using Low Pressure CVD", N. Akiyama, M. Sakuraba and J. Murota, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.P-28.

"Electrical Characteristics of Hole Resonant Tunneling Diodes with High Ge Fraction Si/Strained Si_1-xGe_x Heterostructures on Si(100) Grown by Low-Temperature Ultraclean LPCVD", T. Seo, M. Sakuraba and J. Murota, 2nd Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ., Sendai, Japan, Oct. 2-3, 2006, No.P-29.

"Atomically Controlled CVD Technology for Group IV Semiconductors" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, 8th Int. Conf. on Solid-State and Integrated-Circuit Technol. (ICSICT 2006), Shanghai, China, Oct. 23-26, 2006.

"The Instability of the SiGe/Si-Hetero-Interface in Hetero-MOSFETs due to Bias Stress", T. Tsuchiya, S. Mishima, M. Sakuraba and J. Murota, 37th IEEE Semiconductor Interface Specialists Conf. (IEEE SISC 2006), San Diego, CA, Dec. 7-9, 2006.

"Direct Measurements of Trap Density in a SiGe/Si Hetero Interface by New Charge-Pumping Technique" (Invited Paper), T. Tsuchiya, M. Sakuraba, and J. Murota, 2005 Mat. Res. Soc. Spring Meeting, Symp.E: "Semiconductor Defect Engineering - Materials, Synthetic Structures, and Devices, San Francisco, Mar. 28- Apr. 1, 2005, p108.

"Determination of Diffusivities of Si Self-Diffusion and Si Self-Interstitials using Isotopically Enriched Single- or Multi-³⁰Si Epitaxial Layers" (Invited Paper), S. Matsumoto, S. Seto, S. Aid, T. Sakaguchi, Y. Nakabayashi, K. Yoyonaga, Y. Shimamune, Y. Hashiba, M. Sakuraba, J. Murota, K. Wada, and T.Abe, 2005 Mat. Res. Soc. Spring Meeting, Symp.E: "Semiconductor Defect Engineering - Materials, Synthetic Structures, and Devices, San Francisco, Mar. 28- Apr. 1, 2005, p.126.

"Atomically Controlled CVD Technology for Future Si-Based Devices" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, Proceedings of Int. Symp. ULSI Process Integration IV (Spring Meeting of The Electrochem. Soc., Quebec City, Canada, May 15-20, 2005), Proc.Vol.2005-06, pp.53-66, (2005).

"Atomic Control of SiGe Epitaxy and Doping" (Invited Paper), B. Tillack, Y. Yamamoto, D. Bolze, B. Heinemann, H. Ruecker, D. Knoll, D. Wolansky, J. Murota and W. Mehr, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.82-83.

"Characterization of Hot-Carrier Degraded SiGe/Si-Hetero-PMOSFETs", T. Tsuchiya, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.104-105.

"P Atomic Layer Formation on Si_1-xGe_x(100) and Subsequent Si Epitaxy Using Si₂H₆ by Ultraclean Low Pressure CVD", Y. Chiba, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.10-11.

"Carbon Effect on Strain Compensation in Si_1-x-yGe_xC_y Films Epitaxially Grown on Si(100)", H. Nitta, J. Tanabe, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.122-123.

"Plasma Enhanced Surface Reaction of CH₄ on Si(100) and Subsequent Si Epitaxial Growth Using Ultraclean ECR Plasma CVD", Y. Noji, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.276-277

"Effect of Grain Boundary on Electrical Characteristics in B- and P-doped Polycrystalline Si_1-x-yGe_xC_y Film Deposited by Ultraclean LPCVD", H. Shim, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.172-173.

"Thermal Effect on Strain Relaxation in Ge Films Epitaxially Grown on Si(100) Using ECR Plasma CVD", K. Sugawara, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.278-279.

"Strain Relaxation by Line-Shape Patterning in Si/Si_1-xGe_x/Si(100) Heterostructures", J. Uhm, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.190-191.

"Surface Reaction and B Atom Segregation in ECR Chlorine Plasma Etching of B-Doped Si_1-xGe_x Epitaxial Films", H.-S. Cho, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.202-203.

"Photo Detection Characteristics of Si_1-xGe_x/Si p-i-n Diode Integrated with Optical Waveguides", A. Yamada, M. Sakuraba and J. Murota, 4th Int. Conf. Silicon Epitaxy and Heterostructures (ICSI-4), Awaji-Island, Hyogo, Japan, May 23-26, 2005, pp.332-333.

"Atomic Layer Processing for Doping of SiGe" (Invited Paper), B. Tillack, Y. Yamamoto, D. Bolze, B. Heinemann, H. Ruecker, D. Knoll, D. Wolansky, J. Murota and W. Mehr, 1st Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ. Sendai, Japan, May 27-28, 2005, pp.11-14.

"Line-Shape Patterning Effect on Strain in Si/Si_1-xGe_x/Si(100) Heterostructures", J. Uhm, M. Sakuraba and J. Murota, 1st Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ. Sendai, Japan, May 27-28, 2005, No,P-18 pp.57-59.

"Si Epitaxial Growth Using Si₂H₆ on PH₃ Reacted Si_1-xGe_x(100) by Ultraclean Low Pressure CVD", Y. Chiba, M. Sakuraba and J. Murota, 1st Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ. Sendai, Japan, May 27-28, 2005, pp.59-60.

"Strain Relaxation by Heat Treatment in Epitaxial Ge Films on Si(100) Using ECR Plasma CVD", K. Sugawara, M. Sakuraba and J. Murota, 1st Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ. Sendai, Japan, May 27-28, 2005, pp.61-62.

"Carbon Doping Effect on Strained Si_1-xGe_x Epitaxial Growth on Si(100)", H. Nitta, J. Tanabe, M. Sakuraba and J. Murota, 1st Int. Workshop on New Group IV Semiconductor Nanoelectronics, Tohoku Univ. Sendai, Japan, May 27-28, 2005, No,P-21 pp.63-64.

"Experimental Estimation of the Width of the Hot-Carrier-Degraded Region and the Density of Locally-Generated Hetero-Interface Traps in a SiGe/Si Heterostructure", T. Tsuchiya, S. Mishima, M. Sakuraba and J. Murota, 36th IEEE Semiconductor Interface Specialist Conf. (IEEE SISC 2005), Arlington, VA, USA, Dec. 1-3, 2005, Paper No.7.4.

"Quantitative Evaluation of the Interface Trap Density in Nanometer-Thick SiGe/Si Heterostructures by Low-Temperature Charge-Pumping Technique" (Invited Paper), T. Tsuchiya, M. Sakuraba and J. Murota, Proc. 13th Int. Workshop on The Physics of Semiconductor Devices, New Delhi, India, Dec. 13-17, 2005, pp.1171-1175.

"Atomically Controlled Impurity Doping in Si-Based CVD Epitaxial Growth" (Invited Paper), J. Murota, M. Sakuraba, and B. Tillack, Proceedings of MRS Symposium B: High-Mobility Group-IV Materials and Devices (2004 MRS Spring Meeting, San Francisco, CA, April 12-16, 2004), MRS Symp.Proc.Vol.809, pp.201-212.

"Atomically Controlled Processing for Future Si-Based Devices" (Invited Paper), J. Murota, M. Sakuraba and S. Takehiro, 2004 IEEE Workshop on Microelectronics and Electron Devices (WMED), Boise, Idaho USA, April 16, 2004, pp.31-34.

"Hot Carrier Reliability of a SiGe/Si Hetero-Interface in SiGe MOSFETs", T. Tsuchiya, M. Sakuraba and J. Murota, Proceedings of IEEE International Reliability Physics Symposium (IRPS), Phoenix, USA, April 25-29, 2004, pp. 449-454.

"Hot carrier reliability of SiGe/Si-hetero-MOSFETs" (Invited Paper), T. Tsuchiya, M. Sakuraba and J. Murota, 2nd Int. SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.127-128.

"Atomically Controlled Ge Epitaxial Growth on Si(100) in Ar Plasma Enhanced GeH₄ Reaction", K. Sugawara, M. Sakuraba and J. Murota, Second International SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.147-148.

"Integration of Light Emitter and Detector Using Si p-i-n Diodes with Optical Waveguides", A. Yamada, M. Sakuraba and J. Murota, 2nd Int. SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.159-160.

"Electrical Properties of W Delta Doped Si Epitaxial Films Grown on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition", T. Kurosawa, T. Komatsu, M. Sakuraba and J. Murota, 2nd Int. SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.165-166.

"Electrical Properties of N Atomic Layer Doped Si Epitaxial Films Grown by Ultraclean Low-Pressure Chemical Vapor Deposition", Y. Jeong, M. Sakuraba and J. Murota, 2nd Int. SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.211-212.

"Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using Electron Cyclotron Resonance Plasma", M. Mori, T. Seino, D. Muto, M. Sakuraba and J. Murota, 2nd Int. SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.224-225.

"Sidewall Protection by Nitrogen and Oxygen in Poly-Si_1-xGe_x Anisotropic Etching Using Cl₂/N₂/O₂ Plasma", H.-S. Cho, S. Takehiro, M. Sakuraba and J. Murota, 2nd Int. SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.226-227.

"Separation by Bonding Si Island (SBSI) for LSI Applications", T. Sakai, T. Yamazaki, S. Ohmi, S. Morita, H. Ohri, J. Murota, M. Sakuraba, H. Omi and Y. Takahashi, 2nd Int.l SiGe Technology and Device Meeting (ISTDM 2004), Frankfurt (Oder), Germany, May 16-19, 2004, pp.230-231.

"Atomically Controlled Processing for High-Performance Si-Based Devices", J. Murota, and M. Sakuraba, Tohoku-Cambridge Forum, University of Cambridge, U.K., June 10-11, 2004.

"Propagation Characteristics of Si Nitride Optical Waveguide Integrated with Si p-i-n Diodes for Light Emitter and Detector", A. Yamada, M. Sakuraba and J. Murota, 1st Int. Conf. on Group IV Photonics, Hong Kong, China, Sep.29-Oct.1, 2004, No. FA2.

"Sidewall Protection by Nitrogen in Anisotropic Etching of P-doped Poly-Si_1-xGe_x", H.-S. Cho, S. Takehiro, M. Sakuraba and J. Murota, Proceedings of the 1st Int. Symp. on SiGe: Materials Processing and Device (206th Meeting of the Electrochem. Soc., Hawaii, Oct. 3-8, 2004, Abs.No.1307), Proc.Vol.2004-07, pp.243-250, (2004).

"Electrical Properties of B-doped Polycrystalline Si_1-x-yGe_xC_y Film Deposited by Ultraclean Low-pressure CVD", H. Shim, M. Sakuraba and J. Murota, Proceedings of the 1st Int. Symp. on SiGe: Materials Processing and Device (206th Meeting of the Electrochem. Soc., Hawaii, Oct. 3-8, 2004, Abs.No.1309), Proc.Vol.2004-07, pp.261-268, (2004).

"C Atomic Order Doping at Si/Si_1-xGe_x/Si Heterointerface and Improvement of Thermal Stability", K. Takahashi, T. Kobayashi, M. Sakuraba and J. Murota, Proceedings of the 1st Int. Symp. on SiGe: Materials Processing and Device (206th Meeting of the Electrochem. Soc., Hawaii, Oct. 3-8, 2004, Abs.No.1373), Proc.Vol.2004-07, pp.915-922, (2004).

"Low-Temperature SiGe(C) Epitaxial Growth by Ultraclean Hot-Wall Low-Pressure CVD" (Invited Paper), J. Murota and M. Sakuraba, Workshop on Advanced Epitaxy of Si and SiGe, Proceedings of the 1st Int. Symp. on SiGe: Materials Processing and Device (206th Meeting of the Electrochem. Soc., Hawaii, Oct. 3-8, 2004, Abs.No.1364), Proc.Vol.2004-07, pp.825-836, (2004).

"Atomic Level Control of SiGe Epitaxy and Doping" (Invited Paper), B. Tillack, Y. Yamamoto and J. Murota, Workshop on Advanced Epitaxy of Si and SiGe, Proceedings of the 1st Int. Symp. on SiGe: Materials Processing and Device (206th Meeting of the Electrochem. Soc., Hawaii, Oct. 3-8, 2004, Abs.No.1362), Proc.Vol.2004-07, pp.803-813, (2004).

"Etching Characteristics of B-Doped Si_1-xGe_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma", H. Cho, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.47-48.

"Sidewall Protection by Nitrogen in Anisotropic Etching of P-Doped Poly-Si_1-xGe_x Using Cl₂/N₂/SiCl₄ Plasma", H. Cho, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.49-50.

"Electrical Properties of Impurity-doped Polycrystalline Si_1-x-yGe_xC_y Film Deposited on SiO₂ by Ultraclean LPCVD", H. Shim, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.51-52.

"Light Emission and Photo Detection Using Si p-i-n Diodes Integrated with Optical Waveguides", A. Yamada, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.53-54.

"Epitaxial Growth of Strained Ge Film on Si(100) by ECR Plasma CVD Using GeH₄ Gas", K. Sugawara, M. Sakuraba and J. Murota, 3rd International WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.55-56.

"Thermal Stability of Si/Si_1-xGe_x/Si Heterointerface with C Atomic Order Doping Using Ultraclean LPCVD", K. Takahashi, T. Kobayashi, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.57-58.

"Epitaxial Growth and Electrical Properties of W Delta Doped Si Films on Si(100) by Ultraclean LPCVD", T. Komatsu, T. Kurosawa, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.59-60.

"Epitaxial Growth and Electrical Properties of N Atomic Layer Doped Si Films on Si(100) by Ultraclean LPCVD", Y. Jeong, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.61-62.

"Epitaxial Growth of N Delta Doped Si Films on Si(100) by ECR Plasma CVD Using N₂ and SiH₄", M. Mori, T. Seino, D. Muto, M. Sakuraba and J. Murota, 3rd Int.l WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.63-64.

"High Performance Strained SiGe Channel pMOSFETs with Selective CVD B-Doped SiGe Source/Drain Electrode", S. Takehiro, D. Lee, M. Sakuraba, J. Murota and T. Tsuchiya, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.65-66.

"Novel SOI Fabrication Process Utilizing the Selective Etching for Si/SiGe Stacked Layers: Separation by Bonding Si Islands Technology (SBSI)", S. Ohmi, H. Ohri, T. Yamazaki, M. Sakuraba, J. Murota and T. Sakai, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.77-78.

"Hetero-interface traps and hot carrier reliability of SiGe/Si heterostructure and low frequency noise in SiGe-channel pMOSFETs", T. Tsuchiya, M. Sakuraba and J. Murota, 3rd Int. WorkShop on New Group �W (Si-Ge-C) Semiconductors, Sendai, Japan, Oct. 12-13, 2004, pp.89-90.

"Atomically Controlled Impurity Doping for Future Si-Based Devices (Invited Paper)", J. Murota, M. Sakuraba and B. Tillack, 2004 Int. Conference on Solid-State and Integrated-Circuit Technology (ICSICT), Beijing, China, Oct. 18-21, 2004, pp.557-562.

"Hot carrier reliability of a SiGe/Si hetero-interface in SiGe/Si-hetero-MOSFETs" (Invited Paper), T. Tsuchiya, and J. Murota, 2004 Int. Conf. Solid-State and Integrated-Circuit Technol. (ICSICT), Beijing, China, Oct. 18-21, 2004, pp.2120-2124.

"Formation of Stress Free Silicon Nitride Films by Silane Reaction and Nitridation under ECR Nitrogen Plasma Irradiation", M, Saito, M. Sakuraba, and J. Murota, 7th Int. Conf. on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-7), Nara, Japan, November 17-20, 2003, Abs.No.20C55.

"Atomically Controlled Technology for Future Si-Based Devices" (Invited Paper), J. Murota, M. Sakuraba and B. Tillack, The 10th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST 2003), Zeuthen, Germany, Sept.21-26, 2003.

"Atomically Controlled Processing for SiGe-Based Ultrasmall Devices" (Invited Paper),
J. Murota, M. Sakuraba and S. Takehiro,
22nd Electronic Materials Symposium, (EMS-22), Shiga, Japan, July 2-4, 2003, p. .

"Atomically Controlled Epitaxial Growth for Future Si-based Devices"
J. Murota, M. Sakuraba, B. Tillack
2003 Adv. Res. Workshop-Future Trends in Microelectronics, (FTM-4), Corsica, France, June 23-27, 2003, p.

"Noise properties and hetero-interface trap in SiGe-Channel pMOSFETs" (Invited Paper), T. Tsuchiya and J. Murota, Proc. of the 203rd Electrochemical Society Meeting, Symp. on ULSI Process Integration III, Paris, France, Proceedings Volume 2003-06, pp. 241-252, April 28-29, 2003. 203rd Meeting of the Electrochemical Society, Paris, France, April 27-May 2, 2003, Abs.No.966.

"Future Trends of Atomically Controlled Processing for Nano Telecommunication Devices" (Invited Paper),
B. Tillack and J. Murota,
International Forum on Nano and Bio-Technology for Future Info-Communications, Osaka, Japan, March 20, 2003, p.12.

"Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD",
S. Takehiro, D. Lee, M. Sakuraba, J. Murota and T. Tsuchiya,
Third International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI3), Santa Fe, NM, March 9-12, 2003, pp.179-181.

"Solid Phase Growth of Nickel Silicide for Low Resistance Contacts in Si and SiGe(C) Devices",
S. Zaima, Y. Tsuchiya, K. Okubo, O. Nakatsuka, A. Sakai, J. Murota and Y. Yasuda,
Third International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI3), Santa Fe, NM, March 9-12, 2003, pp.74-76.

"Atomically Controlled Silane Reaction on Si(100) Using Ar Plasma Irradiation without Substrate Heating",
D. Muto, M. Sakuraba, T. Seino and J. Murota,
Third International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI3), Santa Fe, NM, March 9-12, 2003, pp.59-61.

"Hole-tunneling nanoscale Si_0.6Ge_0.4/Si diode", P. Han, M. Sakuraba, J. Murota, and Y. Zheng, First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.99-100.

"Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth",
D. Muto, M. Sakuraba, T. Seino and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.251-252.

"Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)",
M. Fujiu, K. Takahashi, M. Sakuraba and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.249-250.

"Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique",
Y. Shimamune, M. Sakuraba and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.247-248.

"Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH₃ and SiH₄",
Y. C. Jeong, M. Sakuraba and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.243-244..

"Si self-diffusion in heavily B-doped epitaxial silicon",
K. Toyonaga, S. Rahamah Bt Aid, Y. Nakabayashi, S. Matsumoto, M. Sakuraba, Y. Shimada, A. Hashiba, and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.235-236.

"Etching Characteristics of Impurity-Doped Si_1-xGe_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma",
H.-S. Cho, S. Takehiro, M. Sakuraba and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.181-182.

"Relationship between Total Impurity(B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment",
J. Noh, S. Takehiro, M. Sakuraba and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.165-166.

"In-situ B doping of SiGe(C) using BCl₃ by hot-wall LPCVD",
Y. Kunii, Y. Inokuchi, A. Moriya, H. Kurokawa and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.161-162.

"Interfacial Reaction and Electrical Properties in Ni/Si and Ni/SiGe Contacts"(Invited Paper),
S. Zaima, O. Nakatsuka, A.Sakai, J. Murota and Y. Yasuda,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.107-108.

"Low Frequency Noise and Hetero-Interface Traps in SiGe-Channel pMOSFETs",
T. Tsuchiya, Y. Imada, and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.33-34.

"A Proposal of Multi-Layer Channel MOSFET: The Application of Selective Etching for Si/SiGe Stacked Layers",
T. Sakai, S. Ohmi, D. Sasaki, M. Sakuraba and J. Murota,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.31-32.

"Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD",
D. Lee, S. Takehiro, M. Sakuraba, J. Murota and T. Tsuchiya,
First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, 2003, pp.17-18.

"Atomically Controlled Processing"(Tutorial Lecture),
J. Murota,
2002 Taiwan First SiGe Technology Workshop, Taiwan, December 16-17, 2002.

"Fabrication of SiGe Channel MOSFET"(Tutorial Lecture),
J. Murota,
2002 Taiwan First SiGe Technology Workshop, Taiwan, December 16-17, 2002.

"CVD kinetics" (Tutorial Lecture),
J. Murota,
2002 Taiwan First SiGe Technology Workshop, Taiwan, December 16-17, 2002.

"Ultracleaning Processing"(Tutorial Lecture),
J. Murota,
2002 Taiwan First SiGe Technology Workshop, Taiwan, December 16-17, 2002.

"SiGe(C) Epitaxial CVD Technology for Si-based Ultrasmall Devices" (Keynote Lecture),
J. Murota,
2002 Taiwan First SiGe Technology Workshop, Taiwan, December 16-17, 2002.

"Atomically Controlled Si Epitaxial Growth in Ar Plasma Enhanced Silane Reaction",
D. Muto, M. Sakuraba, T. Seino and J. Murota,
Fourth International Symposium on Control of Semiconductor Interfaces, Karuizawa, Japan, October 21-25, 2002, Abs.No.P4-2

"Evaluation of Interface Trap Density in a SiGe/Si Heterostructure Using a Charge Pumping Technique and Correlation between the Trap Density and Low Frequency Noise in SiGe-Channel pMOSFETs",
T. Tsuchiya, Y. Imada and J. Murota,
32th European Solid-State Device Research Conference (ESSDERC), Florence, Italy, September 24-26, (2002).

"0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers",
D. Lee, M. Sakuraba, J. Murota and T. Tsuchiya,
2002 Int. Conf. on Solid State Devices and Materials (SSDM 2002), Nagoya, Japan, September 17-19, 2002, pp.764-765.

"SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices" (Invited Paper),
J. Murota and M. Sakuraba,
2nd Int. ECS Semiconductor Technology Conf. (ISTC), The Electrochem. Soc., Tokyo, Japan, September 11-14, 2002

"Atomically Controlled Heterostructure Growth of Group IV Semiconductors",
J. Murota and M. Sakuraba,
3rd "Trends in NanoTechnology" International Conference (TNT2002), the City of Santiago de Compostela (Spain), September 9-13,(2002), p.377.

"Electrical Properties of Impurity-Doped Polycrystalline Si_1-x-yGe_xC_y Films Using Ultraclean Low-Pressure CVD",
H. Shim, M. Sakuraba, T. Tsuchiya and J. Murota,
11th Int. Conf. on Solid Films and Surfaces (ICSFS-11), Marseille, France, July 8-12, 2002.

"Contact Resistivity between Tungsten and Impurity(P and B)-Doped Si_1-x-yGe_xC_y Epitaxial Layer",
J. Noh, M. Sakuraba, J. Murota, S. Zaima and Y. Yasuda,
11th Int. Conf. on Solid Films and Surfaces (ICSFS-11), Marseille, France, July 8-12, 2002.

"Si Epitaxial Growth on Monomethylsilane Reacted Ge(100) and Suppression of Si/Ge Interdiffusion",
K. Takahashi, M. Fujiu, M. Sakuraba and J. Murota,
11th Int. Conf. on Solid Films and Surfaces (ICSFS-11), Marseille, France, July 8-12, 2002.

"W Delta Doping in Si(100) Using Ultraclean Low-Pressure CVD",
T. Kanaya, M. Sakuraba and J. Murota,
11th Int. Conf. on Solid Films and Surfaces (ICSFS-11), Marseille, France, July 8-12, 2002.

"Atomic-Layer Doping of Boron in Si(100) by Ultraclean Low-Pressure CVD",
M. Nomura, M. Sakuraba and J. Murota,
11th Int. Conf. on Solid Films and Surfaces (ICSFS-11), Marseille, France, July 8-12, 2002.

"Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si(100) to SiH₄ and to Ar Plasma",
M. Sakuraba, D. Muto, T. Seino and J. Murota,
11th Int. Conf. on Solid Films and Surfaces (ICSFS-11), Marseille, France, July 8-12, 2002.

"Optoelectronic Conversion Through 850nm Band Single Mode Si₃N₄ Photonic Waveguides for Si-On-Chip Integration",
T. Matsuura, A. Yamada, J. Murota, E. Tamechika, K. Wada and L. C. Kimerling,
60th Annual Device Research Conference, TMS, UC Santa Barbara, California, June 24-26, 2002, pp.93-94.

"Photoguiding and Electronic Conversion Properties of Optoelectronic Integration Devices on Silicon",
A.Yamada, T.Matsuura, J.Murota, E.Tamechika, K.Wada and L.C.Kimerling,
2002 Spring Meeting, The European Materials Research Society, Symposium: H, Symposium Si-based Optoelectronics: Advances and Future Perspectives, Strasbourg, France, June 18-21, 2002.

"SiGe-Channel 0.1-μm pMOSFETs with Super Self-Aligned Ultra- Shallow Junction Formed by Selective In-Situ B-Doped SiGe CVD",
D. Lee, M. Sakuraba, T. Matsuura, J. Murota and T. Tsuchiya,
60th Annual Device Research Conference (DRC), UC Santa Barbara, California, June 24-26, 2002, pp.83-84.

"Double-Polysilicon Self-Aligned HBT with Non-Selective Epitaxial SiGe:C Base Layer",
T. Yamazaki, S. Ohmi, M. Sakuraba, J. Murota and T. Sakai,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.VIII-06.

"Evaluation of SiGe/Si Heterostructure Interface-Traps in SiGe-Channel MOSFETs",
T.Tsuchiya, Y.Imada and J.Murota,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.VII-01.

"Si Epitaxial Growth on SiH₃CH₃ Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment",
K. Takahashi, M. Fujiu, M. Sakuraba and J. Murota,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.IV-12.

"Side-Wall Protection by B in Poly-Si and Si_1-xGe_x in Gate Etching",
H.-S. Cho, T. Seino, A. Fukuchi,, M. Sakuraba and J. Murota,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.VI-05.

"Boron Atomic-Layer Doping in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low- Pressure Chemical Vapor Deposition",
M. Nomura, M. Sakuraba and J. Murota,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.VI-09.

"Work Function of Impurity-Doped Poly-Si_1-x-yGe_xC_y Film Deposited by Ultraclean Low-Pressure CVD",
H. Shim, M. Sakuraba, T. Tsuchiya and J. Murota,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.IV-10.

"Contact Resistivity between W and Heavily Doped Si_1-x-yGe_xC_y Epitaxial Film",
J. Noh, M. Sakuraba, J. Murota, S. Zaima and Y. Yasuda,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.VI-07.

"Fabrication of 0.1 μm SiGe-Channel pMOSFETs with In-Situ B-Doped SiGe Source/Drain",
D. Lee, M. Sakuraba, T. Tsuchiya and J. Murota,
2nd Int. Workshop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, 2002, Abs.No.VIII-05.

"Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma",
M. Mori, T. Seino, D. Muto, M. Sakuraba, T. Matsuura and J. Murota,
201th Meeting of the Electrochemical Society, Philadelphia, PA, May. 12-17, 2002, Abs.No.402.

"Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability",
Y. C. Jeong, M. Sakuraba, T. Matsuura and J. Murota,
Proceedings of the 19th International Symposium on Silicon Material Science and Technology,201th Meeting of the Electrochemical Society, Philadelpia, Pensilvania, May 12-17, 2002.

"Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH₄ Reaction",
Y. C. Jeong, M. Sakuraba, T. Matsuura and J. Murota,
Proceedings of the 6th Symp. on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science), Tokyo, March 1, 2002,pp.151-154.

"Atomic-Order Nitridation of SiO₂ by a Nitrogen Plasma",
T. Seino, T. Matsuura and J. Murota,
Proceedings of the 6th Symp. on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science), Tokyo, March 1, 2002, pp.145-149.

"Atomically Controlled Processing for Group IV Semiconductors",
J. Murota, T. Matsuura and M. Sakuraba,
Proceedings of the 6th Symp. on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science), Tokyo, March 1, 2002, pp.107-115.

"Transient Processes and Structural Transformations in Si and Si_xGe_1-x Layers During Oxygen Implantation and Sputtering",
D. Kruger, A. A. Efremov, J. Murota, B. Tillack, R.Kurps, and G. Ph. Romanova,
13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), Nara, Japan, Nov. 11-16, 2001, AA1,p.108.

"Heavy Doping Characteristics of Si Films Epitaxially Grown at 450^oC by Alternately Supplied PH₃ and SiH₄",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Ise-Shima Royal Hotel, Mie, Japan, Nov. 14-16, 2001, Abs.8.4.

"Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH₄ Reaction",
Y. C. Jeong, M. Sakuraba, T. Matsuura and J. Murota,
2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices, Ise-Shima Royal Hotel, Mie, Japan, Nov. 14-16, 2001, Abs.8.3.

"Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures",
T. Matsuura, A. Yamada and J. Murota,
AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2, 2001, PH-ThA7, p.229.

"Self-Limited Layer-by-Layer Growth of Si by Alternated SiH₄ Supply and Ar Plasma Exposure",
D. Muto, T. Seino, T. Matsuura, and J. Murota,
AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2, 2001, EL-WeA3, p.179.

"Growth Characteristics of Si_1-x-yGe_xC_y on Si(100) and SiO₂ in Ultraclean Low-Temperature LPCVD",
Y. Hashiba, M. Sakuraba, T. Matsuura and J. Murota,
AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2, 2001, SS-SC-TuP2, p.135.

"Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films",
T. Seino, T. Matsuura and J. Murota,
AVS 48th International Symposium, San Francisco, California, Oct. 29-Nov. 2, 2001, PS-MoP10, p.53.

"Exploration of SiGe/Si Heterostructure Interface in SiGe-Channel MOSFETs (Invited Paper)",
T. Tsuchiya, Y. Imada, and J. Murota,
The Sixth International Conference on Solid-State and Integrated-Circuit Technology, Oct. 22-25, 2001, Shanghai, China, Vol.1, pp.575-579.

"CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)",
J. Murota, M. Sakuraba and T. Matsuura,
The Sixth International Conference on Solid-State and Integrated-Circuit Technology, Oct. 22-25, 2001, Shanghai, China, Vol.1, pp.525-530.

"Thermal Nitridation of Ultrathin SiO₂ on Si by NH₃",
O. Jintsugawa, M. Sakuraba, T. Matsuura and J. Murota,
9th European Conference on Applications of Surface and Interface Analysis (SIA), Avignon, France,Sep. 30- Oct. 5, 2001, Abs.No.MO-P-MOE 08,p.194.

"Atomic-Order Nitridation of SiO₂ by a Nitrogen Plasma",
T. Seino, T. Matsuura, and J. Murota,
9th European Conference on Applications of Surface and Interface Analysis (SIA), Avignon, France, Sep. 30- Oct. 5, 2001, Abs.No.MO-P-MOE 07, p.193.

"Atomically Controlled Processing for Group IV Semiconductors",
(Keynote Lecture) J. Murota, T. Matsuura and M. Sakuraba,
9th European Conference on Applications of Surface and Interface Analysis (SIA), Avignon, France, Sep. 30- Oct. 5, 2001, Abs.No.MO-KL-MOE, p.20.

"Epitaxial Growth of Heavily P-doped Si Films at 450^oC by Alternately Supplied PH₃ and SiH₄",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
13th European Conference on Chemical Vapor Deposition, Glyfada, Athens, Greece, Aug.26-31, 2001, pr3, pp.255-260.

"Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices",
J. Murota, T. Matsuura, and M. Sakuraba,
2001 Advanced Research Workshop, Future Trends in Microelectronics: The Nano Millennium, Ile de Bendor, France, Jun. 25-29, 2001, p51.

"Study on Solid Phase Reaction in Ti/p⁺-Si_1-x-yGe_xC_y/Si Contacts",
A. Tobioka, Y. Tsuchiya, H. Ikeda, A. Sakai, Y. Yasuda, S. Zaima, and J. Murota,
2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, Jun. 5-8, 2001, Abs.No.D-XIII/P1.

"Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_1-xGe_x",
T. Yamashiro, M. Sakuraba, T. Matsuura, J. Murota and T. Tsuchiya,
2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, Jun. 5-8, 2001, Abs.No.D-V/P20.

"Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)",
M. Fujiu, M. Sakuraba, T. Matsuura and J. Murota,
2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, Jun. 5-8, 2001, Abs.No.D-VIII/P9.

"Doping and Electrical Characteristics of Si Films Eptaxially Grown at 450^oC by Alternately Supplied PH₃ and SiH₄",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, Jun. 5-8, 2001, Abs.No.D-X,3.

"Side-Wall Protection by B in P-Doped Polysilicon in Gate Etching",
T. Seino, A. Fukuchi, T. Matsuura and J. Murota,
Proceedings of the Second International Symposium on ULSI Process Integration II,(C.L. Claeys, F. Gonzalez, J. Murota and K. Saraswat eds., The Electrochemical Society, Pennington, NJ,2001),
199th Meeting of the Electrochemical Society, Washington, DC, Mar. 25-30, 2001. pp.324-329.

"Low Frequency Noise in Si_1-xGe_x-Channel pMOSFETs",
T. Tsuchiya, T. Matsuura, and J. Murota,
Proceedings of the Second International Symposium on ULSI Process Integration II,(C.L. Claeys, F. Gonzalez, J. Murota and K. Saraswat eds., The Electrochemical Society, Pennington, NJ,2001),
199th Meeting of the Electrochemical Society, Washington, DC, Mar. 25-30, 2001. pp.205-210.

"Epitaxial Growth of Pure ³⁰Si Layers on a Natural Si(100) Substrate Using Enriched ³⁰SiH₄",
Y. Nakabayashi, T. Segawa, H. I. Osman, K. Saito, S. Matsumoto, J. Murota, K. Wada, and T. Abe,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PVI-25.

"Buffered HF Etching Characteristics of Si_1-x-yGe_xC_y Epitaxial Films",
S. Ishida, Y. Hashiba, M. Miyamoto, T. Matsuura and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PVI-21.

"Thermal Nitridation of Ultrathin Silicon Dioxide Films at 750-850^oC in an NH₃ Environment",
O. Jintsugawa, M. Sakuraba, T. Matsuura and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PVI-20.

"Self-Limiting Surface Reaction of SiH₄ and CH₃SiH₃ on Ge(100)",
M. Fujiu, M. Sakuraba, T. Matsuura and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PVI-19.

"Atomic-Order Plasma Nitridation of Si under the Si Surface Cooling",
T. Seino, T. Matsuura and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PVI-18.

"Study on Solid-Phase Reactions in Ti/p⁺-Si_1-x-yGe_xC_y/Si(100) Contacts",
A. Tobioka, Y. Tsuchiya, H. Ikeda, A. Sakai, S. Zaima*, J. Murota+, and Y. Yasuda,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PIV-13.

"B- and P-Doped SiGe(C) Epitaxial Growth on Si(100) by Ultraclean LPCVD",
T. Noda, D. Lee, H. Shim, M. Sakuraba, T. Matsuura, and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PIV-08.

"Development of Ultraclean LPCVD Equipment for SiGe(C) Epitaxial Growth",
Y. Kunii, Y. Inokuchi, A. Moriya, and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PIV-05.

"Heavy Doping Characteristics in Si Epitaxial Growth at 450^oC by Alternate Supplies of PH₃ and SiH₄",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PII-12.

"Etching Feature Improvement by Side-Wall Protection with B in P-Doped Polysilicon",
A. Fukuchi, T. Seino, T. Matsuura and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PII-11.

"Fabrication of 0.1 μm MOSFETs with Super Self-Aligned Ultrashallow Junction Formed by Selective In-Situ Doped Si_1-xGe_x CVD",
T. Yamashiro, M. Sakuraba, T. Matsuura, J. Murota and T. Tsuchiya,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PII-07.

"Low-Frequency-Noise and Its Correlation with Transconductance in Si_1-xGe_x-Channel pMOSFETs",
T. Tsuchiya, T. Matsuura, and J. Murota,
First International WorkShop on New Group IV (Si-Ge-C) Semiconductors: Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices, Sendai, Japan, Jan. 21-23, 2001, Abs. No.PII-01.

"A New Process for Fabricating Three-Dimensional Periodic Structures Made of Photo-Resists",
K. Matsuda, T. Matsuura and J. Murota,
Materials Research Society 2000 Fall Meeting, Boston, Massachusetts, USA, Nov. 27 - Dec. 1, 2000, Abs.No.E1.6 p.94.

"Surface Adsorption and Reaction on Si and SiO₂ at Very Low Temperature in a WF₆-SiH₄ Gas System",
Y. Yamamoto, T. Matsuura and J. Murota,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.294-297.

"Epitaxial Growth and Electrical Characteristics of Impurity-Doped Si_1-x-yGe_xC_y on Si(100) by Ultraclean LPCVD",
D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura and J. Murota,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.270-273.

"Very Low-Resistive Si Epitaxial Growth at 450^oC by Alternately Supplied PH₃ and SiH₄",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.266-269.

"Surface Reaction of Silane and Methylsilane on Ge(100)",
M. Fujiu, M. Sakuraba, T. Matsuura and J. Murota,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.262-265.

"Nitrogen-Doped Si Epitaxial Growth by Alternately Supplied NH₃ and SiH₄",
T. Watanabe, Y. C. Jeong, M. Sakuraba, T. Matsuura and J. Murota,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.258-261.

"Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH₃ Gas",
O. Jintsugawa, M. Sakuraba, T. Matsuura and J. Murota,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.227-230.

"Influence of Surface Heating due to Plasma Exposure on Atomic-Order Plasma Nitridation of Si",
T. Seino, D. Muto, T. Matsuura and J. Murota,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.223-226.

"Atomically Controlled Processing for Fabrication of Si-based Ultimate-Small Devices",
J. Murota, T. Matsuura and M. Sakuraba,
Workshop on Selective and Functional Film Deposition Technologies as Applied to ULSI Technology (29th IUVSTA Workshop), 2nd International Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Ise-Shima Royal Hotel, Mie, Japan, Nov. 19-24, 2000, pp.131-134.

"Thermal Effects in Atomic-Order Nitridation of Si by a Nitrogen Plasma",
T. Seino, D. Muto, T. Matsuura and J. Murota,
The 47th International Symposium on Plasma Science and Technology at the American Vacuum Society, Boston, Massachusetts, USA, Oct. 2-6, 2000, Abs.No.PS-WeP17, p.141.

"Thermal Stability of Si and C Atomic Layers Formed on Ge(100) in Silane and Methylsilane Reactions",
M. Fujiu, M. Sakuraba, T. Matsuura and J. Murota,
American Vacuum Society 47th International Symposium: Vacuum Thin Films, Surfaces/Interfaces,
Processing & NANO-6, Boston, Massachusetts, Oct. 2-6, 2000, Abs.No.TF-MoM4, p.15.

"Thermal Nitridation of Ultrathin Silicon Dioxide Films Using NH₃ Gas",
O. Jintsugawa, M. Sakuraba, T. Matsuura and J. Murota,
American Vacuum Society 47th International Symposium: Vacuum Thin Films, Surfaces/Interfaces,
Processing & NANO-6, Boston, Massachusetts, Oct. 2-6, 2000, Abs.No.SC1+EL+SS-MoM4, p.8.

"Atomic-Order Thermal Nitridation of Si(100) and Subsequent Epitaxial Growth of Si",
T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota,
American Vacuum Society 47th International Symposium: Vacuum Thin Films, Surfaces/Interfaces,
Processing & NANO-6, Boston, Massachusetts, Oct. 2-6, 2000, Abs.No.SC1+EL+SS-MoM1, p.7.

"Heavily P-doped Si Films Epitaxially Grown at 450oC by Alternately Supplied PH₃ and SiH₄",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
2000 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS2000, Sapporo, Japan, Sep.10-14, 2000, Abs.No.Tul-4, p76.

"A Novel Lithographic Method for Fabricating Three Dimensional Periodic Stacks",
T. Matsuura, K. Matsuda and J. Murota,
2000 International Conference on Solid State Devices and Materials (SSDM2000), Sendai, Japan, Aug. 29-31, 2000, pp.542-543.

"In-Situ Impurity Doping in S_i1-x-yGe_xC,sub>y Epitaxial Growth Using Ultraclean LPCVD",
D. Lee, T. Noda, H. Shim, M. Sakuraba, T. Matsuura and J. Murota,
2000 International Conference on Solid State Devices and Materials (SSDM2000), Sendai, Japan, Aug. 29-31, 2000, pp.206-207.

"Atomic-Layer Doping in Si by Alternately Supplied PH₃ and SiH₄",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
2000 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, May 30-Jun. 2, 2000, Abs.No.F-IV.3.

"Doping and Electrical Characteristics of In Situ Heavily B-Doped Si_1-x-yGe_xC_y Films Epitaxially Grown Using Ultraclean LPCVD",
T. Noda, D. Lee, H. Shim, M. Sakuraba, T. Matsuura and J. Murota,
2000 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, May 30-Jun. 2, 2000, Abs.No.F-�U.6.

"Surface Adsorption of WF₆ on Si and SiO₂ in Selective W-CVD",
Y. Yamamoto, T. Matsuura and J. Murota,
Proceedings of the 15th International Conference on Chemical Vapor Deposition: CVD XV, ((M. D. Allendorf, T. M. Bessman, M. L. Hitchman, M Robinson, Y. Shimogaki, F. Teyssandier, and R. K. Ulrich eds., The Electrochemical Society, Pennington, NJ, 2000), Vol.PV2000-13, (in press).
197th Meeting of the Electrochemical Society, Toronto, Canada, May14-18, 2000, Abs.No.928.

"Surface Adsorption and Reaction of Chlorine on Impurity Doped Si Using an ECR Plasma",
Proceedings of the Plasma Processing XIII, (G. S. Mathad, D. W. Hess, M. Meyyappan, M. Yang and G. K. Celler eds., The Electrochemical Society, Pennington, NJ, 2000), 2000, pp.251-256.
T. Kanetsuna, T. Matsuura and J. Murota,
197th Meeting of the Electrochemical Society, Toronto, Canada, May14-18, 2000, Abs.No.294.

"Atomic-Order Side-Wall Passivation with Nitrogen in ECR Plasma Etching of Si",
T. Matsuura, T. Seino and J. Murota,
Proceedings of the Plasma Etching Processes for Sub-Quarter Micron Devices, (D. W. Hess, Y. Horiike, T. Lii, G. S. Mathad, D. Misra and L. Simpson eds., The Electrochemical Society, Pennington, NJ, 1999), Vol.PV99-30, pp.220-225.
196th Meeting of the Electrochemical Society, Honolulu, Hawaii, Oct.17-22, 1999, Abs.No.691.

"Super Self-Aligned Processing for Sub 0.1μm MOS Devices Using Selective Si_1-xGe_x CVD",
T. Kikuchi, T. Yamashiro, A. Moriya, T. Noda, Y. Yamamoto, C. Deng, M. Sakuraba, T. Matsuura and J. Murota,
Proceedings of the First International Symposium on ULSI Process Integration, (C.L.Claeys, H.Iwai, G.Bronner and R.Fair eds., The Electrochemical Society, Pennington, NJ, 1999), Vol.PV99-18, pp.147-153.
196th Meeting of the Electrochemical Society, Honolulu, Hawaii, Oct.17-22, 1999, Abs. No.1334.

"Atomically Controlled Processing for Si-Based Ultrasmall Devices (Invited paper)",
J. Murota, T. Matsuura and M. Sakuraba,
Extended Abstracts of 18th Symposium on Future Electron Devices, Tokyo, Oct.20-21, 1999, pp.65-70.

"SiGe Processing and its Application to MOS Devices (Invited paper)",
J. Murota, M. Sakuraba and T. Matsuura,
The 1st Microelectronics Workshop, Seoul, Korea, Oct.12-14, 1999, pp.30-31.

"CVD Si_1-xGe_x Epitaxial Growth and Its Application to MOS Devices (Invited paper)",
J. Murota, M. Sakuraba and T. Matsuura,
Proceedings of the SPIE Conference on Microelectronic Device Technology III, The International Society for Optical Engineering, Santa Clara, California, Sep.22-23, 1999, Vol.3881, pp.33-45.

"Drain Leakage Current and Instability of Drain Current in Si/Si_1-xGe_x MOSFETs",
T. Tsuchiya, K. Goto, M. Sakuraba, T. Matsuura and J. Murota,
Int. Joint Conf. on Si Epitaxy and Heterostructures (IJC-Si), Zao, Japan, Sep.12-17, 1999, Abs.No.P II-14.

"Diffusion and Segregation of Impurities from Doped Si_1-xGe_x Films into Silicon",
S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, and J. Murota,
Int. Joint Conf. on Si Epitaxy and Heterostructures (IJC-Si), Zao, Japan, Sep.12-17, 1999, Abs.No.P II-1.

"Micro-Roughness Control of the Si_1-xGe_x Surfaces Treated with Buffered Hydrofluoric Acid",
S. Ishida, T. Osada, M. Miyamoto, M. Sakuraba, T. Matsuura and J. Murota,
Int. Joint Conf. on Si Epitaxy and Heterostructures (IJC-Si), Zao, Japan, Sep.12-17, 1999, Abs.No.P I-2.

"C Introduced Si_1-xGe_x/Si Resonant Tunneling Diodes Epitaxially Grown Using Low-Temperature Low-Pressure CVD",
P. Han, M. Sakuraba, Y-C. Jeong, T. Matsuura and J. Murota,
Int. Joint Conf. on Si Epitaxy and Heterostructures (IJC-Si), Zao, Japan, Sep.12-17, 1999, Abs.No.J-4.

"Epitaxial Growth of Si_1-x-yGe,sub>xC_y Film on Si(100) in a SiH₄-GeH₄-CH₃SiH₃ Reaction",
A. Ichikawa, Y. Hirose, T. Ikeda, T. Noda, M. Fujiu, T. Takatsuka, A. Moriya, M. Sakuraba, T. Matsuura and J. Murota,
Int. Joint Conf. on Si Epitaxy and Heterostructures (IJC-Si), Zao, Japan, Sep.12-17, 1999, Abs.No.P�U-2.

"H-Termination Effects on Initial Growth Characteristics of W on Si Using WF₆ and SiH₄ Gases",
Y. Yamamoto, T. Matsuura and J. Murota,
EUROCVD 12, Sitges, Barcelona, Spain, Sep.5-10, 1999.

"Layer-by-Layer Growth of Silicon Nitride Films by NH₃ and SiH₄",
T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota,
EUROCVD 12, Sitges, Barcelona, Spain, Sep.5-10, 1999.

"Observation of Sharp Current Peaks in Resonant Tunneling Diode of Strained Si_0.6Ge_0.4/Si(100) Grown by Low-Temperature Low-Pressure CVD",
P. Han, M. Sakuraba, Y. C. Jeong, K. Bock, T. Matsuura and J. Murota,
7th International Conference on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, Jul. 27-30, 1999, pp.125-126.

"Evaluations of Dynamic Threshold-Voltage MOSFET's with Modulated Doping in Ge_xSi_1-x/Si Strained Layer Heterostructures",
B. Jicheol, S. Yunhup, M. Takahama, H. Kurino, J. Murota and M. Koyanagi,
1999 Silicon Nanoelectronics Workshop, Session 3, Kyoto, Japan, Jun. 12-13, 1999.

"Atomic-Layer Adsorption of P on Si(100) and Ge(100) by PH₃ Using an Ultraclean Low-Pressure Chemical Vapor Deposition",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
The 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5), Provence, France, Jul. 6-9, 1999, Abs.No.P37.

"Atomic-Order Surface Reaction of CH_{SiH3 on Ge(100) and Si(100)",
T. Takatsuka, M. Fujiu, M. Sakuraba, T. Matsuura and J. Murota,
The 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5), Provence, France, Jul. 6-9, 1999, Abs.No.P20.}

"Atomic Order Adsorption and Reaction of CVD Hydride Gases on the Si and Ge Surfaces",
J. Murota,
The 5th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5), Provence, France, Jul. 6-9, 1999, Abs.No.P19.

"Etching of Si_1-xGe_x Epitaxial Films Using an ECR Chlorine Plasma",
H. Takeuchi, T. Matsuura and J. Murota,
1999 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, Jun. 1-4, 1999, Abs.No.D-�V.2.

"Radical- and Ion-Induced Reactions in Atomic-Order Plasma Nitridation of Si",
T. Seino, T. Matsuura and J. Murota,
1999 Spring Meeting, The European Materials Research Society (E-MRS), Strasbourg, France, Jun. 1-4, 1999, Abs.No.D/P7.

"High Quality Si_1-xGe_x Epitaxial Growth by CVD (Invited Paper)",
J. Murota, M. Sakuraba and T. Matsuura,
Edited by T. Abe, W. M. Bullis, S. Kobayashi, W. Lin and P. Wagner, Proceedings of the Third International Symposium on Defects in Silicon, (The Electrochemical Society, Pennington, NJ, 1999), Vol.PV99-1, pp.189-202.
195th Meeting of The Electrochemical Society, Seattle, Washington, May 2-6, 1999, Abs.No.332.

"In-Situ Doping in CVD Epitaxial Si_1-xGe_x Heavy-Doping and Electrical Characteristics",
J. Murota, A. Moriya, T. Kikuchi, T. Noda, C. Deng, M. Sakuraba and T. Matsuura,
1999 Spring Meeting, Materials Research Society, San Francisco, California, Apr. 5-9, 1999, Abs.No.V2.3, pp.328-329.

"Phosphorus Diffusion from Doped Si_1-xGe_x Film into Silicon",
S. Kobayashi, M. Iizuka, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura and J. Murota,
1999 Spring Meeting, Materials Research Society, San Francisco, California, Apr. 5-9, 1999, Abs.No.S9.2, pp.301-302.

"Surface Termination of the Ge(100) and Si(100) Surfaces by Using DHF Solution Dipping",
M. Sakuraba, T. Matsuura and J. Murota,
1998 Fall Meeting, Materials Research Society, Symposium I（III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications), Boston, Massachusetts, Nov. 30-Dec. 4, 1998,
Mat.Res.Soc.Symp.Proc.Vol.535, pp.281-286, (1999).

"Atomic-Order Nitridation of Si by Radical- and Ion-Induced Reactions Using an Ultraclean ECR Nitrogen Plasma",
T. Seino, T. Matsuura and J. Murota,
194th Meeting of the Electrochemical Society, Boston, Massachusetts, November 1-6, 1998, Abs.No.799.
Edited by M. D. Allendorf, M. R. Zachariah, L. Mountziaris and A. H. McDaniel, Proceedings of the Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis, (The Electrochemical Society, Pennington, NJ, 1999), Vol.PV98-23, pp.191-196.

"Atomic-Layer Nitridation of Si(100) by NH₃ Using Flash Heating",
T. Watanabe, M. Sakuraba, T. Matsuura and J. Murota,
194th Meeting of the Electrochemical Society, Boston, Massachusetts, November 1-6, 1998, Abs.No.806.
Edited by M. D. Allendorf, M. R. Zachariah, L. Mountziaris and A. H. McDaniel,
Proceedings of the Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis, (The Electrochemical Society, Pennington, NJ, 1999), Vol.PV98-23, pp.69-74.

"Atomic-Layer Adsorption of P on Si(100) by Using Ultraclean LPCVD",
Y. Shimamune, M. Sakuraba, T. Matsuura and J. Murota,
194th Meeting of the Electrochemical Society, Boston, Massachusetts, November 1-6, 1998, Abs.No.784.
Edited by M. D. Allendorf, M. R. Zachariah, L. Mountziaris and A. H. McDaniel,
Proceedings of the Symposium on Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Materials Synthesis, (The Electrochemical Society, Pennington, NJ, 1999), Vol.PV98-23, pp.58-62.

"Initial Reaction in Low-Temperature Selective Growth of W Using a WF₆ and SiH₄ Gas System",
Y. Yamamoto, T. Matsuura and J. Murota,
194th Meeting of the Electrochemical Society, Boston, Massachusetts, Nov. 1-6, 1998, Abs.No.352.

"Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_1-xGe_x Films Epitaxially Grown Using Ultraclean LPCVD",
A. Moriya, M. Sakuraba, T. Matsuura and J. Murota,
14th International Vacuum Congress(IVC-14), 10th International Conference on Solid Surfaces (ICSS-10),
Birmingham, UK, Aug. 31-Sep. 4, Abs.No.EM.WeA.4, 1998, p.88.

"Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma",
T. Matsuura, Y. Honda and J. Murota,
4th Asia-Pacific Conference on Plasma Science & Technology (APCPST'98) & 11th Symposium on Plasma Science for Materials(SPSM'98), Sydney, NSW, Australia, Jul. 27-29, 1998, p.61.

"In-Situ Phosphorus Doping on Si_1-xGe_x Epitaxial Growth in the SiH₄-GeH₄-PH₃ Gas System by Using LPCVD",
C. J. Lee, T. Matsuura and J. Murota,
Digest of 1998 International Microprocesses and Nanotechnology Conference, Kyungju, Korea, Jul. 13-16, 1998, pp.31-32.

"Heavy Doping Characteristics of P and B in Si_1-xGe_x Epitaxial Films",
J. Murota, A. Moriya, M. Sakuraba and T. Matsuura,
1998 SPRING MEETING, The European Materials Research Society (E-MRS), Strasbourg, France, Jun. 16-19, 1998, p.D-24.

"Process Technology for Sub 0.1μm Si Devices",
J. Murota, T. Matsuura and M. Sakuraba,
1998 Advanced Research Workshop Future Trends in Microelectronics: Off the Beaten Path , Ile des Embiez, France, May 31-Jun. 5, 1998.

"Atomic-Layer Surface Reaction of NH₃ on Si (100) at Low Temperatures",
J. Murota, T. Watanabe, M. Sakuraba and T. Matsuura,
1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS'98, Sapporo, Japan, May 31-Jun. 4, 1998, Abs.No.Tu4-10, p134.

"Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma",
Y. Honda, T. Matsuura and J. Murota,
Edited by G. S. Mathad, D. Misra and K. B. Sundaram, Proceedings of the 12th International Symposium on Plasma Processing/1998, (The Electrochemical Society, Pennington, NJ, 1998), Vol.PV98-4, pp.94-100.
The Electrochemical Society 193rd Meeting Abstracts, San Diego, California, May 3-8, 1998, Vol.98-1, Abs.No.179.

"Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma",
Y. Honda, T. Matsuura and J. Murota,
Edited by G. S. Mathad, D. Misra and K. B. Sundaram, Proceedings of the 12th International Symposium on Plasma Processing/1998, (The Electrochemical Society, Pennington, NJ, 1998), Vol.PV98-4, pp.94-100.
The Electrochemical Society 193rd Meeting Abstracts, San Diego, California, May 3-8, 1998, Vol.98-1, Abs.No.179.

"Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_1-xGe_x Films Using Ultraclean LPCVD",
A. Moriya, M. Sakuraba, T. Matsuura, J. Murota, I. Kawashima and N. Yabumoto,
Spring Meeting, Materials Research Society, Symposium FF(Epitaxy and Applications of Si-Based Heterostructures), Abs.FF9.8, San Francisco, California, Apr. 13-17, 1998, p.490.
Mat. Res. Soc. Symp. Proc. Vol.533, pp.349-354(1998).