FIRST INTERNATIONAL
SiGe
Technology and Device Meeting
(From
Materials and Process Technology to Device and Circuit
Technology)
Nagoya
University Symposion, Nagoya, Japan
January 15-17, 2003
http://www.murota.riec.tohoku.ac.jp/ISTDM2003Jan
>>>
"ISTDM
2003 Call for Paper"(.pdf, about 220KB) <<<
What's New |
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updated on Jan. 27 | ||
IMPORTANT SCHEDULES | updated on Nov. 20 | |
PREFACE | ||
PROGRAM | updated on Dec. 18 | |
PRESENTATION | updated on Dec. 12 | |
ABSTRACTS | updated on Feb. 21 | |
PROCEEDINGS | updated on Feb. 21 | |
REGISTRATION | ||
............................ | LOCATION & TRANSPORTATION | updated on Dec. 7 |
ACCOMMODATION | ||
BANQUET | ||
CORRESPONDENCE | ||
COMITTEE MEMBERS |
"Numbers of Participants and Paper Presentaions" (pdf File)
Abstract Deadline: | September 30, 2002 Extended to October 10, 2002 |
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Scheduled Paper (Number) |
Total Time |
Talk/Discussion Time |
Proceeding pages printed in Appl. Surf. Sci |
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Plenary (2) | 35min | 30min/5min | 8 pages/paper | |
Invited (17) | 25min | 20min/5min | 6 pages/paper | |
Contributed (116) | Regular | 15min | 12min/3min | 4 pages/paper |
Short | 4min | 3min/ (1min-Alternation) |
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Notification of Abstract Acceptance: |
November middle, 2002 | |||
Advanced Program: |
December 18, 2002 |
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Advanced Registration: |
December 10, 2002 |
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Late News Deadline: | December 10, 2002 | |||
Proceedings |
End of the Lunch
Time on January 15, 2003 |
The first International SiGe Technology and Device Meeting (ISTDM) will be held in Nagoya, Japan, on January 15-17, 2003. This meeting will provide a forum for reviewing and discussing all technological aspects from materials and process technologies to device and circuit technologies for SiGe(C) semiconductor. The meeting will consist of both invited and contributed papers. Contributed papers are solicited in the following areas;
Technical Area
1. Materials in Si-Ge-(C) System: SiGe wafer fabrication; Strained or Strain-relaxed Si, Ge, SiGe(C) or Si:C formation; Novel growth technique; Si, Ge and SiGe(C) quantum wire/dot formation; Defect-controlled buffer layer growth; Defect engineering and characterization.
2. Process Technology: Gate, source/drain and channel engineering; SiGe(C) and Si:C epitaxy; Polycrystalline/ amorphous SiGe(C) and Si:C deposition; Cleaning and treatment of SiGe(C) surface; Impurity doping; Impurity diffusion and diffusion suppression; Dry etching; Metal contact; Si/Ge intermixing control; Oxide and nitride on SiGe heterostructure; Ge and C contamination in Si process; Process characterization.
3. Device Technology: HBT; CMOS; BiCMOS; Hetero-FET over CMOS; RTD; Optical devices (emitters and receivers); Ultimate small device; High-speed devices; Low-voltage/low-power devices; SOI; SoC.
4. Circuit Technology: Analog; RF power amplifier; High-speed; Mixed-analog/digital; RF mobile communication; Wireline data-/tele-communication; Ubiquitous network.
On behalf of the Committees, it is our great pleasure to welcome you to the ISTDM Conference at Nagoya, Japan.
Yukio
Yasuda (Nagoya University) Chair of the Organizing Committee for the 1st Meeting |
|
Time Table for Presentations and Advanced Program are distributed as follows.
Time Table for Presentations | Advanced Program |
MS Excel File (updated
on Nov. 21) PDF File (updated on Nov. 21) |
MS Excel File (updated
on Dec. 18) PDF File (updated on Dec. 18) |
Information on Oral and Poster Presentation is distributed as follows.
Note: We need your cooperation to avoid time delay due to use of PC projector. Even if you use PC projector, please keep the printed materials on the OHP transparency sheets. In the case that problem happens at the computer-projector connection, the presentor should have presentation with use of conventional OHP projector.
Note: ISTDM2003 does not provide computers for the PC-projector Presentation.
Information on Oral Presentation | Information on Poster Presentation |
MS Word File PDF File |
MS Word File PDF File |
Issue of "ISTDM 2003 Program & Abstracts" is stocked. If you want to buy, please order to SiGe@murota.riec.tohoku.ac.jp and it will cost 7,500 Japanese Yen per book. Please understand the stocked number is limited.
Deadline
: October 10, 2002
Late News Deadline : December 10, 2002
"Abstract Preparation Form" |
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Use of the above "Abstract Preparation Form" is strongly recommended to prepare your abstract.
ONE ORIGINAL and THREE COPIES of camera-ready two-page abstract with one page of text and one page of figures, written in English on white bond paper (A4 size; 2.5cm margin on four sides, use of Times New Roman Font and Single Spacing is recommended) should be submitted by December 10, 2002 to the following address. Abstract submission as E-MAIL-ATTACHED WORD-file or PDF-file is also available.
Abstract Submission Address | Prof. Junichi
Murota Research Institute of Electrical Communication, Tohoku University Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan. E-Mail: SiGe@murota.riec.tohoku.ac.jp. |
The abstract text (in normal 12-point font) should be headed by the Title (in bold 14-point font), Author(s), Affiliation(s), Address, Telephone number, Fax number and E-mail address (in normal 12-point font), and clearly describes the new contributions of the work.
The submission notification included Title, Author(s), Affiliation(s), Address, Telephone number, Fax number and E-mail address should be also sent by E-mail.
Papers to be presented at the meeting will be selected by the Program Committee based on the submitted abstracts. The notice of acceptance and the advanced program will be e-mailed to one of the authors by the middle of November 2002.
Issue of the ISTDM 2003 Proceedings will be
published in a special issue of Applied Surface
Science.
The publication schedule will be updated here.
Receiptance of manuscripts for the
Proceedings was finished on Jan. 15, 2003.
The manuscripts are now in 2nd reviewing procedure.
"Guide for Preparation of Manuscript" is now distributed. --> <MS Word File> <PDF File>
ONE ORIGINAL and THREE COPIES of the manuscript should be submitted to the PUBLICATION OFFICE by one of the authors until the END OF THE LUNCH TIME ON JANUARY 15, 2003 (the first day of the ISTDM2003). Any manuscript that is not submitted by one of the authors until the deadline will not be included in the Proceedings. IN ADDITION, in order to perform rapid editorial works in publication, the manuscript SHOULD BE SENT BY E-MAIL to SiGe@riec.tohoku.ac.jp until January 15, 2003.
All manuscripts will be reviewed with normal refereeing procedures during the ISTDM.
Number of the pages printed on Applied Surface Science is assigned as follows:
Plenary Paper : 8 pages/paper
Invited Paper : 6 pages/paper
Contributed Paper : 4 pages/paper
Registration Fee |
Banquet Fee |
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before Dec. 10, 2002 |
after Dec. 10, 2002 |
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Regular |
25,000 Japanese yen |
30,000 Japanese yen |
5,000 Japanese yen |
Student |
12,000 Japanese yen |
15,000 Japanese yen |
5,000 Japanese yen |
Accompanying |
------ |
3,000 Japanese yen |
Your completed registration form should be sent to Prof. Y. Yasuda for advanced registration. Payment must be made in Japanese yen by bank transfer or credit card. If paying by bank transfer, please pay your bank commission charge and send a copy of your receipt together with the registration form. Accepted credit cards are VISA, Master, American Express, JCB, UFJ, and Million. Personal checks and bank checks are NOT ACCEPTABLE.
"Registration Form" (MS WORD File) | Bank
Transfer (Please pay your bank commission
charge.) Account Name: ISTDM2003 Yukio Yasuda Account Number: 4581507 Bank: UFJ Bank, Hoshigaoka Branch 14-14 Hoshigaoka-Motomachi, Chikusa-ku, Nagoya 464-0802, Japan |
"Registration Form" (PDF File) |
Meeting Site:
Nagoya University Symposion, Furo-cho, Chikusa-ku,
Nagoya, Japan
Transportation |
Hotel
Map (for Screen-Preview) |
Meeting Site Map |
Motoyama Station |
Map & Transportation |
JTB Corp. has been appointed as the official travel agent for the meeting and will handle accommodations.
JTB Convention Support Center (c/o JTB Event & Convention Service)
"ISTDM" DESK
Koutsu Bldg.6F, 3-13-26 Meieki, Nakamura-ku,Nagoya,450-0002 JAPAN
Phone:(81)52-541-2521, Fax:(81)52-541-2520, E-mail: jtbecs@cjn.or.jp
Detail Informations about Hotel Reservation are described in the following "Hotel Infomation".
"Hotel Information" | MS WORD File / PDF File |
"Hotel Application Form" | MS WORD File / PDF File |
Participants wishing to make reservations for accommodations should complete the above "Hotel Application Form" and return it to JTB no later than December 25, 2002. Applications for hotel accommodations should be accompanied by a deposit of one night room charge plus a handling charge of 500 Japanese Yen per one room in advance. Please pay for the balance when checking out the hotel.
Payments must be made by either one of the following:
Bank transfer
Please remit a deposit of one night room charge plus a handling charge to the following account.
Bank: UFJ Bank, Nagoya Ekimae Branch (Please pay your bank commission charge.)
Account Name: JCSC
Account Number: 2354117Credit cards
Visa, MasterCard, American Express, Diners Club, JCB are available. Please fill in the Credit Card Authorization in the application form and return it to JTB.
NOTE: Personal checks are not acceptable. We would appreciate your kindly sending us a photo-copy of the bank's receipt for your remittance.
CANCELLATION: If you decided to make any changes or cancellations, please inform JTB by FAX or E-mail. JTB accept only written notification. The cancellation fees apply according to the date of your notification.
A banquet will be held on January 15, 2003. Please make your reservation by using the attached registration form. Tickets can also be purchased at the registration desk.
For further information, please contact to:
Prof. Junichi Murota,
Chair of the International Technical Program Committee,
Research Institute of Electrical Communication, Tohoku University
2-1-1, Katahira, Aoba-ku, Sendai, 980-8577, Japan
Tel.&Fax: +81-22-217-5548
E-mail:SiGe@murota.riec.tohoku.ac.jp
URL: http://www.murota.riec.tohoku.ac.jp/ISTDM2003Jan
INTERNATIONAL ADVISORY COMMITTEE
P. Ashburn (Southampton Univ., UK) |
D. Gruetzmacher (PSI, Switzerland) |
Y. Shiraki (Univ. Tokyo, Japan) |
INTERNATIONAL TECHNICAL PROGRAM COMMITTEE
J.
Murota (Chair, Tohoku Univ., Japan) B. Tillack (Vice Chair, IHP, Germany) J.C. Sturm (Vice Chair, Princeton Univ., USA) M.R. Caymax (Publication; IMEC, Belgium) T. Abe (Shin-Etsu Handotai, Japan) W. Arden (Infineon, Germany) J. Arndt (Atmel, Germany) S. Banerjee (Univ. Texas at Austin, USA) D. Bouchier (UMR CNRS, France) M. Carroll (USA) A. Chantre (STMicroelectronics, France) S.-C. Chen (TSMC, Taiwan) J.D. Cressler (Georgia Inst. Tech., USA) M. Currie (AmberWave Systems, USA) D. Dutartre (STMicroelectronics, France) I. Eisele (Univ. Bundeswehr, Germany) J.M. Hartmann (CEA LETI, France) D. Houghton (Aixtron-Canada, Canada) V. Ilderem (Motorola, USA) H. von Kaenel (ETH Zurich, Switzerland) |
T.-J.
King (UC Berkeley, USA) J. Kolodzey (Univ. Delaware, USA) Y. Kunii (Hitachi Kokusai Electric, Japan) H. Kurino (Tohoku Univ., Japan) C.W. Liu (National Taiwan Univ., Taiwan) B. Meinerzhagen (Univ. Bremen, Germany) T. Mimura (Fujitsu Laboratories, Japan) M. Miyao (Kyushu Univ., Japan) M. Nakamae (Sumitomo Mitsubishi Silicon, Japan) M. Nakamura (SONY, Japan) J. Osten (Univ. Hannover, Germany) R. Plana (LAAS-CNRS, France) J. Ramm (Unaxis, Liechtenstein) H.-M. Rein (Ruhr-Univ. Bochum, Germany) F.M. Ross (IBM T.J. Watson Research Center, USA) H. Ruecker (IHP, Germany) J. Sakai (Anelva, Japan) A. Samoilov (Applied Materials, USA) K. Saraswat (Stanford Univ., USA) |
S.
Selberherr (Tech. Univ. Vienna, Austria) D. Singh (IBM T.J. Watson Research Center, USA) J.W. Slotboom (Philips, The Netherlands) Y. Suda (Tokyo Univ. Agric. and Tech., Japan) N. Suematsu (Mitsubishi Electric, Japan) S. Takagi (Toshiba, Japan) T. Takagi (Matsushita Electric, Japan) T. Tatsumi (NEC, Japan) H.C. Tseng (UMC, Taiwan) T. Tsuchiya (Shimane Univ., Japan) L. Vescan (Forschungszentrum Julich, Germany) K. Washio (Hitachi, Japan) J. Wen (ASM America, USA) M. Willander (Chalmers Univ. Tech., Sweden) Y.-H. Xie (UCLA, USA) T. Yoshikawa (Matsushita Electric, Japan) Y.-D. Zheng (Nanjing Univ., China) |
ORGANIZING COMMITTEE for the 1st Meeting | STEERING COMMITTEE for the 1st Meeting |
Y. Yasuda (Chair, Nagoya Univ.,
Japan) Y. Shiraki (Vice Chair, Univ. Tokyo, Japan) A. Ourmazd (Vice Chair, IHP, Germany) J. Murota (Secretary, Tohoku Univ., Japan) B. Tillack (Secretary, IHP, Germany) S. Zaima (Secretary, Nagoya Univ., Japan) |
S. Zaima (Chair, Nagoya Univ.,
Japan) A. Sakai (Nagoya Univ., Japan) M. Sakuraba (Tohoku Univ., Japan) O. Nakatsuka (Nagoya Univ., Japan) S. Takehiro (Tohoku Univ., Japan) |