Note (1): ISCSI-VI has been cancelled
due to the current difficult situation in Japan.

Note (2): ICSI-7 conference has been rescheduled and
will now be organized in Leuven, Belgium,
from August 28 - September 1, 2011.

>> See New ICSI-7 Web Site: http://www.icsi7.com <<

( Following Contents are Old ! )

6th International Symposium on
Control of Semiconductor Interfaces
(ISCSI-VI)

May 25(Wed) - 27(Fri), 2011

Research Institute of Electrical Communication (RIEC)
Tohoku University, Sendai, Japan

Web site: http://www.murota.riec.tohoku.ac.jp/ISCSI6/

Sponsored by
Japan Society for the Promotion of Science (JSPS)

The Sixth International Symposium on Control of Semiconductor Interfaces (ISCSI-VI) will be held at Tohoku University in Sendai, Japan, on May 25-27, 2011. ISCSI was established by the 154 Committee on Semiconductor Interfaces and Their Application, the University-Industry Cooperative Research Committee, The Japan Society for the Promotion of Science (JSPS), following a series of highly successful meetings held at Karuizawa, Japan, in 1993, 1996, 1999, 2002, and at Hachiohji, Japan, in 2007. The aim of this symposium is primarily to bring together leading-edge researchers and other interested parties in the field of science and engineering of semiconductor interfaces and related matters.

NOTE: ISCSI-VI will be collocated with the 7th International Conference on Silicon Epitaxy and Heterostructures (ICSI-7), May 22(Sun)-26(Thu), 2011. Some focus sessions will be jointed with ICSI-7.

　

Abstract Deadline: February 28, 2011 (Extended!)
Abstract Deadline: February 15, 2011 (Extended!)
Abstract Deadline: February 1, 2011
(Submission Site is now open !)

Proceedings Manuscript Deadline: May 16, 2011
(Submission Site will be ready by April, 2011)

Call for Papers (uploaded on Jan. 25, 2011)

　

Topic Areas Submission of Papers Proceedings
(New !)		 Registration

Keynote Address
& Invited Speakers
(New !)

Committee

Location &
Transportation

 Link


Topic Areas

Thin Film Growth and Characterization

Si, Strained Si, Ge, SiGe(C), SiC, Diamond, Silicide, Compound semiconductors, III-nitrides, Oxide semiconductors,
High-k insulator, Low-k insulator
CVD, MBE, Selective epitaxy, Atomic layer control, Novel growth technique
Band engineering, Defect engineering, Simulation and modeling

Surface and Interface Control

Surface passivation and modification, Surface and interface chemistry
Schottky and ohmic contacts
Atomic scale characterization of surfaces and interfaces
Surface/interface issues in advanced devices

Formation and Characterization of Nanostructures

Nanodots, Nanowires, Superlattice
Self-assembling, Self-organization
Nanoscale characterization, In-situ characterization

Process and Device Technology

Impurity diffusion, Dry etching, Microfabrication, Isolation
SiGe gate, Source/drain and channel engineering, Base/emitter engineering
SOI, SGOI, III-V on Si, Wafer bonding, Virtual substrates and their Manufacturing
CMOS, HBT, BiCMOS, FeRAM, MODFET, SET, RTD, LED, LD, OEIC

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Submission of Papers

Papers to be presented at the conference will be selected by the Program Committee based on submitted abstracts.
Notice of acceptance will be e-mailed to the corresponding author towards the end of March, 2011.

The work must be original and unpublished. Prospective authors should submit abstract(s) (only in PDF file), TWO PAGES in length including all figures and tables, by February 28, 2011, to the following submission World Wide Web site.
The TWO-PAGE ABSTRACT must be written in English and typed in an area of A4 size. The first page must be headed by the title of the paper, author(s), affiliation(s), address, telephone number, fax number, e-mail address of the corresponding author. The text of the abstract must clearly and concisely state the specific results of the work and its originality. Please refer to the sample abstract (PDF file) for detailed format information. If you use, please download the abstract template (Microsoft Word) and prepare your abstract following the instructions.

If you have already prepared the PDF file, Click here ! (Abstract Submission Site)
[ NOTE: Abstract Deadline is further extended to February 28, 2011. ]

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Proceedings

Proceedings of ICSI-7 & ISCSI-VI will be published in the special issue of Thin Solid Films (tentatively by February of 2012).

MANUSCRIPT SUBMISSION DEADLINE is May 16, 2011.

All manuscripts should be submitted through the Online Submission System of Elsevier (which will be ready by April, 2011) and will be reviewed with normal reviewing procedures by referees.

For reviewers' convenience, THREE COPIES OF MANUSCRIPTS should be also submitted to the PUBLICATION OFFICE on the conference site until the END OF THE LUNCH TIME on May 23, 2011.

Further information will be updated on this web site.

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Registration

Registration Fee

(for attending ICSI-7 & ISCSI-VI)

Banquet Fee

(for attending Banquet
on May 25, 2011
near the conference site)
　 Until April 25, 2011
for Early Registration
with Discount Rate		 Registration from
April 26, 2011
and
On-site Registration
General
(An abstracts book and an proceedings book
are included)		 35,000 JPY 40,000 JPY 5,000 JPY
Student
(An abstracts book is included. A proceedings book
is NOT included)		 15,000 JPY 20,000 JPY

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Keynote Address & Invited Speakers

At ICSI-7 and ISCSI-VI, keynote address and invited presentations will be scheduled by distinguished speakers as follows:

　 Recommended for Country
/Region		 Presenter Title (Tentative)
Keynote
Address		 ICSI-7 Europe Matty Caymax
(imec, Belgium)		 "Germanium and III-V for Beyond-Si CMOS: channel materials and gate stacks"
Japan Masanobu Miyao
(Kyushu Univ., Japan) 		"Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices"
ISCSI-VI USA Jerry Tersoff
(IBM, USA) 		"How interfaces control nanostructure formation"
Invited
Presentation		 ICSI-7 Europe Didier Dutartre
(STMicroelectronics, France) 		　
Roger Loo
(imec, Belgium) 		　
Maksym Myronov
(Univ. Warwick, UK) 		　
Michael Oehme
(Univ. Stuttgart, Germany) 		　
H. Joerg Osten
(Leibniz Universitat Hannover, Germany) 		　
Ina Ostermay
(Globalfoundries, Germany) 		　
Henry Radamson
(Royal Institute of Technology, Sweden) 		　
Thomas Schroeder
(IHP-Microelectronics, Germany) 		　
USA Paul R. Berger
(Ohio State Univ., USA) 		　
Eugene Fitzgerald
(Massachusetts Institute of Technology, USA) 		　
Satheesh Kuppurao
(AMAT, USA) 		　
Jurgen Michel
(Massachusetts Institute of Technology, USA) 		　
James C. Sturm
(Princeton Univ., USA) 		　
Kang L. Wang
(UCLA, USA) 		　
Asia Chee-Wee Liu
(National Taiwan Univ., Taiwan) 		　
Chia Yee Yeo
(National Univ. Singapore, Singapore) 		　
Japan Yasuo Kunii
(Hitachi Kokusai Electric, Japan) 		　
ICSI-7/
ISCSI-VI		 Asia Jungdal Choi
(Samsung, Rep. of Korea) 		　
Japan Hiroki Hibino
(NTT, Japan) 		　
Mitsuru Funato and Yoichi Kawakami
(Kyoto Univ., Japan) 		　
Junichi Motohisa
(Hokkaido Univ., Japan) 		　
Toshihide Nabatame
(National Institute for Materials Science, Japan) 		　
Takashi Nakayama
(Chiba Univ., Japan) 		　
Kyoichi Suguro
(Toshiba, Japan) 		　
Satoshi Tanimoto
(Nissan Motor, Japan) 		　

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Committee

International Advisory Committee

J. Nishizawa (Chair, Sophia Univ.)
A. Hiraki (Osaka Univ.)
Y. Yasuda (Tohoku Univ.)
M. Caymax (imec)

 K. Oura (Osaka Univ.)
Y. Shiraki (Tokyo City Univ.)
B. Tillack (IHP Microelectronics)
Y. H. Xie (UCLA)

　

Organizing Committee

J. Murota (Chair, Tohoku Univ.)
S. Miyazaki (Nagoya Univ.)
K. Shiojima (Fukui Univ.)
T. Okumura (Tokyo Metropolitan Univ.)
A. Toriumi (Univ. Tokyo)

 K. Washio (Hitachi)
T. Ogino (Yokohama National Univ.)
S. Zaima (Nagoya Univ.)
T. Ito (Osaka Univ.)
T. Katoda (Kochi Univ. Tech.)

　

International Technical Program Committee

T. Okumura (Chair, Tokyo Metropolitan Univ.)
A. Toriumi (Co-Chair, Univ. Tokyo)
K. Washio (Vice Chair, Hitachi)
T. Ogino
(Vice Chair, Yokohama National Univ.)
T. Asano (Kyushu Univ.)
T. Chikyow (NIMS)
S. Chiussi (Univ. Vigo)
E. A. Fitzgerald (MIT)
S. Fukatsu (Univ. Tokyo)
T. Fukui (Hokkaido Univ.)
D. Gruetzmacher
(Forschungszentrum Juelich)
T. Hashizume (Hokkaido Univ.)
R. Hatakeyama (Tohoku Univ.)
K. Hirakawa (Univ. Tokyo)
T. Hiramoto (Univ. Tokyo)
F. Hirose (Yamagata Univ.)
M. Hori (Nagoya Univ.)
J. L. Hoyt (MIT)
T. Ito (Osaka Univ.)

T. Kikkawa (Fujitsu)
T. Kimoto (Kyoto Univ.)
Y. Kiyota (Sony)
K. Kobayashi (Tokai Univ.)
Y. Koide (NIMS)
N. Koshida (Tokyo Univ. Agri. Tech.)
Y. Kunii (Hitachi Kokusai Electric)
C. W. Liu (National Taiwan Univ.)
R. Loo (imec)
M. Miyao (Kyushu Univ.)
S. Miyazaki (Nagoya Univ.)
H. Nakashima (Kyushu Univ.)
Y. Okada (Univ. Tokyo)
H. Omi (NTT)
N. Ohtani (Kwansei Gakuin Univ.)
D. J. Paul (Univ. Glasgow)
W. Saito (Toshiba)
A. Sakai (Osaka Univ.)
S. Sakai (Tokushima Univ.)
K. Shiraishi (Tsukuba Univ.)
J. Suda (Kyoto Univ.)

Y. Suda (Tokyo Univ. Agri. Tech.)
M. Suemitsu (Tohoku Univ.)
M. Tabe (Shizuoka Univ.)
S. Takagi (Univ. Tokyo)
Y. Takahashi (Hokkaido Univ.)
N. Tamura (Fujitsu Lab.)
H. Tatsuoka (Shizuoka Univ.)
T. Teraji (NIMS)
T. Tezuka (Toshiba)
T. Tsuchiya (Shimane Univ.)
K. Tsutsui (Tokyo Inst. Tech.)
N. Usami (Tohoku Univ.)
H. von Kaenel (ETH Zurich)
A. Wakahara (Toyohashi Univ. Tech.)
K. Yamabe (Tsukuba Univ.)
A. Yamada (Tokyo Inst. Tech.)
K. Yamada (Waseda Univ.)
S. Yamasaki (AIST)
H. Yokoyama (NTT)

　

Steering Committee
S. Miyazaki (Chair, Nagoya Univ.)
K. Shiojima (Vice Chair, Fukui Univ.)
S. Higashi (Hiroshima Univ.)
M. Koyama (Toshiba)
K. Makihara (Hiroshima Univ.)
H. Murakami (Hiroshima Univ.)		 O. Nakatsuka (Nagoya Univ.)
A. Ohta (Hiroshima Univ.)
M. Sakashita (Nagoya Univ.)
M. Sakuraba (Tohoku Univ.)
W. Takeuchi (Nagoya Univ.)

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Location & Transportation

Sendai is near the Best Sightseeing Area, Matsushima, which means " Pine Islands", is about 260 islands in Bay of Matsushima in Miyagi, covered with pine trees. The harmony between islands and sea makes breathtaking beauty. It is said that even Matsuo Basho, one of the most famous haiku poet in Japan, couldn't compose good haiku, overwhelmed by the beauty.

Sendai is located 350 kilometers north of Tokyo on the pacific coast of Japan. Domestic flights to Sendai Airport from Airports of Narita, Nagoya, Osaka and so on are available. The JR Shinkansen Express (bullet train) connects major cities in Japan, and it takes only 2 hours from Tokyo to Sendai.

The trip from Narita Airport to Sendai takes around 3.5 hours by JR Narita Express (a railway between Narita Airport and Tokyo) or Keisei Line (a railway between Narita Airport and Ueno) and JR Tohoku Shinkansen Express.

Via Narita Airport:  Take either the JR Narita Express or a Airport Limousine Bus to JR Tokyo Station, or Keisei Line (Skyliner) to JR Ueno Station.
- JR Narita Express to JR Tokyo Station is available and it takes 60 minutes at about 3000 yen.
- Airport Limousine Bus to JR Tokyo Station is also available and it takes about 80 minutes at 3000 yen.
- Keisei Line (Skyliner) to Keisei Ueno Station (100m away from JR Ueno Station) is also available and it takes about 50 minutes at 2400 yen.

Via JR Station of Tokyo or Ueno: Take the JR Tohoku Shinkansen Express to Sendai. The train is available every 15 minutes and it takes 2 hours at about 10,000-11,000 yen.

Via Sendai Airport: Railway (Sendai Airport Access Line) runs frequently to JR Sendai Station at 630 yen. Scheduled travel time is about 25 minutes.

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Link

Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC),
Tohoku University

　

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