Note (1): ICSI-7 conference has been rescheduled and
will now be organized in
Leuven, Belgium,
from August 28 - September 1, 2011

Note (2): ISCSI-VI has been cancelled
due to the current difficult situation in Japan.

>> See New ICSI-7 Web Site: <<

( Following Contents are Old ! )

7th International Conference on
Si Epitaxy and Heterostructures

May 22(Sun) - 26(Thu), 2011

Research Institute of Electrical Communication (RIEC)
Tohoku University, Sendai, Japan

Web site:

Sponsored by
Research Institute of Electrical Communication, Tohoku University


The ICSI-7 will provide a unique forum for reviewing and discussing novel developments in physics and device technologies of Si epitaxy, heterostructures, and nanostructures. The conference is a biannual succession of the previous ICSI conferences (1st: Miyagi Zao, Japan,1999; 2nd: Strasbourg, France, 2001; 3rd: Santa Fe, USA, 2003; 4th: Awaji Island, Japan, 2005; 5th: Marseille, France, 2007; 6th: Los Angeles, USA, 2009).

NOTE: 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI, May 25-27, 2011) & some workshops will be held successively. Some focus sessions will be joint with ISCSI-VI. Website of the previous ISCSI-V is here.


Abstract Deadline: February 28, 2011 (Extended!)
Abstract Deadline: February 15, 2011 (Extended!)
Abstract Deadline: February 1, 2011
(Submission Site is now open !)

Proceedings Manuscript Deadline: May 16, 2011
(Submission Site will be ready by April, 2011)

Call for Papers (uploaded on Jan. 25, 2011)


Conference Topics Abstract Submission Proceedings
(New !)

Keynote Address
& Invited Speakers
(New !)


  Location &


Conference Topics

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Abstract Submission

Papers to be presented at the conference will be selected by the Program Committee based on submitted abstracts.
Notice of acceptance will be e-mailed to the corresponding author towards the end of March, 2011.

PDF file of Camera-ready TWO-PAGE abstract (one-page main text and one-page figures), written in English on white bond paper (A4 size; 2.5cm margin on four sides), should be prepared. The abstract is strongly recommended to be prepared in Black/White. (Abstracts will published in Black/White). The abstract should be headed by the title, author(s), affiliation(s), address, telephone number, fax number and e-mail address, and clearly describe the originality and new contributions of the work.

If you have already prepared the PDF file, Click here ! (Abstract Submission Site)
[ NOTE: Abstract Deadline is further extended to February 28, 2011. ]

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Proceedings of ICSI-7 & ISCSI-VI will be published in the special issue of Thin Solid Films (tentatively by February of 2012).


All manuscripts should be submitted through the Online Submission System of Elsevier (which will be ready by April, 2011) and will be reviewed with normal reviewing procedures by referees.

For reviewers' convenience, THREE COPIES OF MANUSCRIPTS should be also submitted to the PUBLICATION OFFICE on the conference site until the END OF THE LUNCH TIME on May 23, 2011.

Further information will be updated on this web site.

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Registration Fee

(for attending ICSI-7 & ISCSI-VI)

Banquet Fee

(for attending Banquet
on May 25, 2011
near the conference site)

  Until April 25, 2011
for Early Registration
with Discount Rate
Registration from
April 26, 2011
On-site Registration
(An abstracts book and an proceedings book
are included)
35,000 JPY 40,000 JPY 5,000 JPY
(An abstracts book is included. A proceedings book
is NOT included)
15,000 JPY 20,000 JPY

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Keynote Address & Invited Speakers

At ICSI-7 and ISCSI-VI, keynote address and invited presentations will be scheduled by distinguished speakers as follows:

  Recommended for Country
Presenter Title (Tentative)
ICSI-7 Europe Matty Caymax
(imec, Belgium)
"Germanium and III-V for Beyond-Si CMOS: channel materials and gate stacks"
Japan Masanobu Miyao
(Kyushu Univ., Japan)
"Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices"
ISCSI-VI USA Jerry Tersoff
"How interfaces control nanostructure formation"
ICSI-7 Europe Didier Dutartre
(STMicroelectronics, France)
Roger Loo
(imec, Belgium)
Maksym Myronov
(Univ. Warwick, UK)
Michael Oehme
(Univ. Stuttgart, Germany)
H. Joerg Osten
(Leibniz Universitat Hannover, Germany)
Ina Ostermay
(Globalfoundries, Germany)
Henry Radamson
(Royal Institute of Technology, Sweden)
Thomas Schroeder
(IHP-Microelectronics, Germany)
USA Paul R. Berger
(Ohio State Univ., USA)
Eugene Fitzgerald
(Massachusetts Institute of Technology, USA)
Satheesh Kuppurao
Jurgen Michel
(Massachusetts Institute of Technology, USA)
James C. Sturm
(Princeton Univ., USA)
Kang L. Wang
Asia Chee-Wee Liu
(National Taiwan Univ., Taiwan)
Chia Yee Yeo
(National Univ. Singapore, Singapore)
Japan Yasuo Kunii
(Hitachi Kokusai Electric, Japan)
Asia Jungdal Choi
(Samsung, Rep. of Korea)
Japan Hiroki Hibino
(NTT, Japan)
Mitsuru Funato and Yoichi Kawakami
(Kyoto Univ., Japan)
Junichi Motohisa
(Hokkaido Univ., Japan)
Toshihide Nabatame
(National Institute for Materials Science, Japan)
Takashi Nakayama
(Chiba Univ., Japan)
Kyoichi Suguro
(Toshiba, Japan)
Satoshi Tanimoto
(Nissan Motor, Japan)

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International Advisory Committee

M. Bauer (ASM)
M. Caymax (imec)
Z. M. Jiang (Fudan Univ.)
E. Kasper (Stuttgart Univ.)
V. Le Thanh (CINaM-CNRS)

J. L. Liu (UC Riverside)
J. Murota (Tohoku Univ.)
Y. Shiraki (Tokyo City Univ.)
Y. H. Xie (UCLA)
Y. Yasuda (Tohoku Univ.)
M. Oehme (Secretary, Univ. Stuttgart)


Organizing Committee

S. Zaima (Chair, Nagoya Univ.)
J. Murota (Vice Chair, Tohoku Univ.)
S. Miyazaki (Vice Chair, Nagoya Univ.)
S. Takagi (Tokyo Univ.)

K. Washio (Hitachi)
M. Sakuraba (Tohoku Univ.)
O. Nakatsuka (Nagoya Univ.)


International Technical Program Committee

J. Murota (Chair, Tohoku Univ.)
S. Miyazaki (Co-Chair, Nagoya Univ.)
S. Takagi (Vice Chair, Tokyo Univ.)
K. Washio (Vice Chair, Hitachi)
J. Baumgartl (Infineon Technologies)
I. Berbezier (Univ. Marseille)
J. C. Bean (Univ. Virginia)
S. Chiussi (Univ. Vigo)
C. Dubourdieu (IBM and CNRS)
D. Dutartre (STMicroelectronics)
K. Eberl (Lumics)
D. Enicks (ATMEL)
I. Eisele (Univ. Bundeswehr)
E. Fitzgerald (MIT)
M. M. Frank (IBM)
D. Gruetzmacher
(Forschungszentrum Juelich)
J.-M. Hartmann (LETI-CEA)
J. Holt (IBM Microelectronics)
J. Hoyt (MIT)
K. M. Itoh (Keio Univ.)
H. Itokawa (Toshiba)
T. Kamins (Stanford Univ.)
J. Kim (IBM T.J. Watson Research Center)
N. Koshida (Tokyo Univ. Agri. Tech.)

Y. Kunii (Hitachi Kokusai Electric)
M. L. Lee (Yale Univ.)
C. W. Liu (National Taiwan Univ.)
R. Loo (imec)
M. Masi (Univ. Milan)
Y. Miyanami (Sony)
M. Miyao (Kyushu Univ.)
M. Myronov (Univ. Warwick)
K. Nakagawa (Yamanashi Univ.)
H. Nakashima (Kyushu Univ.)
M. Niwano (Tohoku Univ.)
W. X. Ni (Linkoping Univ.)
A. I. Nikiforov (Russian Academy Sci.)
S. Oda (Tokyo Inst. Tech.)
M. C. Ozturk (North Carolina State Univ.)
D. J. Paul (Univ. Glasgow)
T. Peaker (Univ. Manchester)
C. Pirri (Univ. Haute Alsace)
A. Reznicek
(IBM Thomas J. Watson Research Center)
H. S. Rhee (Samsung Electronics)
A. Sakai (Osaka Univ.)
T. Schroeder (IHP Microelectronics)

Y. Shi (Nanjing Univ.)
E. Simoen (imec)
P. Storck (Siltronic AG)
J. C. Sturm (Princeton Univ.)
M. Suemitsu (Tohoku Univ.)
M. Tabe (Shizuoka Univ.)
Y. Takahashi (Hokkaido Univ.)
T. Tezuka (Toshiba Corp.)
P.E. Thompson (Naval Research Lab.)
B. Tillack (IHP Microelectronics)
S. Thomas (ASM)
A. Toriumi (Univ. Tokyo)
N. Usami (Tohoku Univ.)
H. von Kaenel (ETH Zurich)
B. Voigtloender
(Forschungszentrum Juelich)
A. F. Vyatkin (Inst. Microelectronics)
K. L. Wang (UCLA)
D. Webb (MEMC Electronic Materials)
R. Wise (Texas Instruments)
Q. Xiang (Altera)
A. Yamada (Tokyo Inst. Tech.)
T. S. Yoon (Myongji Univ.)
S. Zaima (Nagoya Univ.)


Steering Committee

M. Sakuraba (Chair, Tohoku Univ.)
O. Nakatsuka (Vice Chair, Nagoya Univ.)
S. Higashi (Hiroshima Univ.)
M. Koyama (Toshiba)
K. Makihara (Hiroshima Univ.)
H. Murakami (Hiroshima Univ.)
A. Ohta (Hiroshima Univ.)
M. Sakashita (Nagoya Univ.)
K. Shiojima (Fukui Univ.)
W. Takeuchi (Nagoya Univ.)

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Location & Transportation

Sendai is near the Best Sightseeing Area, Matsushima, which means " Pine Islands", is about 260 islands in Bay of Matsushima in Miyagi, covered with pine trees. The harmony between islands and sea makes breathtaking beauty. It is said that even Matsuo Basho, one of the most famous haiku poet in Japan, couldn't compose good haiku, overwhelmed by the beauty.

Sendai is located 350 kilometers north of Tokyo on the pacific coast of Japan. Domestic flights to Sendai Airport from Airports of Narita, Nagoya, Osaka and so on are available. The JR Shinkansen Express (bullet train) connects major cities in Japan, and it takes only 2 hours from Tokyo to Sendai.

The trip from Narita Airport to Sendai takes around 3.5 hours by JR Narita Express (a railway between Narita Airport and Tokyo) or Keisei Line (a railway between Narita Airport and Ueno) and JR Tohoku Shinkansen Express.

Via Narita Airport:  Take either the JR Narita Express or a Airport Limousine Bus to JR Tokyo Station, or Keisei Line (Skyliner) to JR Ueno Station.
JR Narita Express to JR Tokyo Station is available and it takes 60 minutes at about 3000 yen.
Airport Limousine Bus to JR Tokyo Station is also available and it takes about 80 minutes at 3000 yen.
Keisei Line (Skyliner) to Keisei Ueno Station (100m away from JR Ueno Station) is also available and it takes about 50 minutes at 2400 yen.

Via JR Station of Tokyo or Ueno: Take the JR Tohoku Shinkansen Express to Sendai. The train is available every 15 minutes and it takes 2 hours at about 10,000-11,000 yen.

Via Sendai Airport: Railway (Sendai Airport Access Line) runs frequently to JR Sendai Station at 630 yen. Scheduled travel time is about 25 minutes.

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Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC),
Tohoku University


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