Note (1): ICSI-7 conference has been
rescheduled and
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( Following Contents are Old ! )
Web site: http://www.murota.riec.tohoku.ac.jp/ICSI7/
Sponsored
by
Research Institute of Electrical Communication, Tohoku University
The ICSI-7 will provide a unique forum for reviewing and discussing novel developments in physics and device technologies of Si epitaxy, heterostructures, and nanostructures. The conference is a biannual succession of the previous ICSI conferences (1st: Miyagi Zao, Japan,1999; 2nd: Strasbourg, France, 2001; 3rd: Santa Fe, USA, 2003; 4th: Awaji Island, Japan, 2005; 5th: Marseille, France, 2007; 6th: Los Angeles, USA, 2009).
NOTE: 6th Int. Symp. on Control of Semiconductor Interfaces (ISCSI-VI, May 25-27, 2011) & some workshops will be held successively. Some focus sessions will be joint with ISCSI-VI. Website of the previous ISCSI-V is here. |
Abstract
Deadline: February 28, 2011 (Extended!)
Abstract
Deadline: February 15, 2011 (Extended!)
Abstract Deadline: February 1,
2011(Submission Site is now open !)
Proceedings
Manuscript Deadline: May 16, 2011
(Submission Site will be ready by April, 2011)
Call for Papers (uploaded on Jan. 25, 2011)
Conference Topics | Abstract Submission | Proceedings (New !) |
Registration |
Keynote
Address |
Location & Transportation |
Growth, Characterization and Modeling of Si and Group IV (C, Si, Ge, Sn) based Thin Film Materials including research on various interfaces on Si;
Formation and Characterization of Group IV based Nanostructures including quantum dots, nanowires and self-assembly processes;
Process Technologies for Group IV based Heterostructures including doping,
Source/drain and channel engineering as well as strained Si;
Electronic Properties and Device Applications such as transistors and nano-structured devices;
Optical Properties and Device Applications including solar cells of Si and Ge based heterostructures;
Germanium based semiconductor... from materials to devices;
Si(Ge)-based materials growth and device fabrication for spintronics such as spin polarized electron injection, transport, and manipulation, as well as other electron spin based phenomena;
Growth, characterization and applications of epitaxial (high-k) dielectric materials;
Emerging technologies: Hetero-Epitaxial film growths on SiGe and characterization (Graphene, III-V and others materials).
Papers to be
presented at the conference will be selected by the Program
Committee based on submitted abstracts.
Notice of acceptance will be e-mailed to the corresponding author
towards the end of March, 2011.
PDF file of Camera-ready TWO-PAGE abstract (one-page main text and one-page figures), written in English on white bond paper (A4 size; 2.5cm margin on four sides), should be prepared. The abstract is strongly recommended to be prepared in Black/White. (Abstracts will published in Black/White). The abstract should be headed by the title, author(s), affiliation(s), address, telephone number, fax number and e-mail address, and clearly describe the originality and new contributions of the work.
If you have already
prepared the PDF file, Click here !
(Abstract Submission Site)
[
NOTE: Abstract Deadline is further extended to February
28, 2011. ]
Proceedings of ICSI-7 & ISCSI-VI will
be published in the special issue of Thin Solid Films (tentatively by February of 2012).
MANUSCRIPT
SUBMISSION DEADLINE is May 16, 2011.
All manuscripts should be submitted through the Online Submission
System of Elsevier (which will be ready by April, 2011) and will
be reviewed with normal reviewing procedures by referees.
For reviewers' convenience, THREE COPIES OF MANUSCRIPTS
should be also submitted to the PUBLICATION OFFICE on the
conference site until the END OF THE LUNCH TIME on May 23, 2011.
Further information will be updated on this web site.
Registration Fee (for attending ICSI-7 & ISCSI-VI) |
Banquet Fee (for attending Banquet |
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Until April 25, 2011 for Early Registration with Discount Rate |
Registration from April 26, 2011 and On-site Registration |
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General (An abstracts book and an proceedings book are included) |
35,000 JPY | 40,000 JPY | 5,000 JPY |
Student (An abstracts book is included. A proceedings book is NOT included) |
15,000 JPY | 20,000 JPY |
Keynote Address & Invited Speakers
At ICSI-7 and ISCSI-VI, keynote address and
invited presentations will be scheduled by distinguished speakers
as follows:
Recommended for | Country /Region |
Presenter | Title (Tentative) | |
Keynote Address |
ICSI-7 | Europe | Matty
Caymax (imec, Belgium) |
"Germanium and III-V for Beyond-Si CMOS: channel materials and gate stacks" |
Japan | Masanobu
Miyao (Kyushu Univ., Japan) |
"Novel Growth-techniques of SiGe-based Hetero-structures for Post-scaling Devices" | ||
ISCSI-VI | USA | Jerry
Tersoff (IBM, USA) |
"How interfaces control nanostructure formation" | |
Invited Presentation |
ICSI-7 | Europe | Didier
Dutartre (STMicroelectronics, France) |
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Roger
Loo (imec, Belgium) |
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Maksym
Myronov (Univ. Warwick, UK) |
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Michael
Oehme (Univ. Stuttgart, Germany) |
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H.
Joerg Osten (Leibniz Universitat Hannover, Germany) |
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Ina
Ostermay (Globalfoundries, Germany) |
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Henry
Radamson (Royal Institute of Technology, Sweden) |
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Thomas
Schroeder (IHP-Microelectronics, Germany) |
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USA | Paul
R. Berger (Ohio State Univ., USA) |
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Eugene
Fitzgerald (Massachusetts Institute of Technology, USA) |
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Satheesh
Kuppurao (AMAT, USA) |
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Jurgen
Michel (Massachusetts Institute of Technology, USA) |
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James
C. Sturm (Princeton Univ., USA) |
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Kang
L. Wang (UCLA, USA) |
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Asia | Chee-Wee
Liu (National Taiwan Univ., Taiwan) |
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Chia
Yee Yeo (National Univ. Singapore, Singapore) |
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Japan | Yasuo
Kunii (Hitachi Kokusai Electric, Japan) |
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ICSI-7/ ISCSI-VI |
Asia | Jungdal
Choi (Samsung, Rep. of Korea) |
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Japan | Hiroki
Hibino (NTT, Japan) |
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Mitsuru
Funato and Yoichi Kawakami (Kyoto Univ., Japan) |
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Junichi
Motohisa (Hokkaido Univ., Japan) |
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Toshihide
Nabatame (National Institute for Materials Science, Japan) |
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Takashi
Nakayama (Chiba Univ., Japan) |
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Kyoichi
Suguro (Toshiba, Japan) |
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Satoshi Tanimoto (Nissan Motor, Japan) |
International Advisory Committee |
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M. Bauer (ASM) |
J. L. Liu (UC
Riverside) J. Murota (Tohoku Univ.) Y. Shiraki (Tokyo City Univ.) Y. H. Xie (UCLA) Y. Yasuda (Tohoku Univ.) M. Oehme (Secretary, Univ. Stuttgart) |
Organizing Committee |
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S. Zaima (Chair,
Nagoya Univ.) |
K. Washio (Hitachi) M. Sakuraba (Tohoku Univ.) O. Nakatsuka (Nagoya Univ.) |
International Technical Program Committee |
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J. Murota (Chair,
Tohoku Univ.) |
Y. Kunii (Hitachi
Kokusai Electric) |
Y. Shi (Nanjing
Univ.) |
Steering Committee |
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M. Sakuraba (Chair, Tohoku Univ.) O. Nakatsuka (Vice Chair, Nagoya Univ.) S. Higashi (Hiroshima Univ.) M. Koyama (Toshiba) K. Makihara (Hiroshima Univ.) |
H. Murakami
(Hiroshima Univ.) A. Ohta (Hiroshima Univ.) M. Sakashita (Nagoya Univ.) K. Shiojima (Fukui Univ.) W. Takeuchi (Nagoya Univ.) |
Sendai is near the Best Sightseeing Area, Matsushima, which means " Pine Islands", is about 260 islands in Bay of Matsushima in Miyagi, covered with pine trees. The harmony between islands and sea makes breathtaking beauty. It is said that even Matsuo Basho, one of the most famous haiku poet in Japan, couldn't compose good haiku, overwhelmed by the beauty.
Sendai is located 350 kilometers north of Tokyo on the pacific coast of Japan. Domestic flights to Sendai Airport from Airports of Narita, Nagoya, Osaka and so on are available. The JR Shinkansen Express (bullet train) connects major cities in Japan, and it takes only 2 hours from Tokyo to Sendai.
The trip from Narita Airport to Sendai takes around 3.5 hours by JR Narita Express (a railway between Narita Airport and Tokyo) or Keisei Line (a railway between Narita Airport and Ueno) and JR Tohoku Shinkansen Express.
Via Narita Airport: Take
either the JR Narita Express or a Airport Limousine Bus to JR
Tokyo Station, or Keisei Line (Skyliner) to JR Ueno Station.
- JR Narita Express to JR Tokyo Station is available and it takes 60
minutes at about 3000 yen.
- Airport Limousine Bus to JR Tokyo Station is also available and it takes
about 80 minutes at 3000 yen.
- Keisei
Line (Skyliner) to Keisei Ueno Station (100m away from JR Ueno
Station) is also available and it takes
about 50 minutes at 2400 yen.
Via JR Station of Tokyo or Ueno: Take the JR Tohoku Shinkansen Express to Sendai. The train is available every 15 minutes and it takes 2 hours at about 10,000-11,000 yen.
Via Sendai Airport: Railway (Sendai Airport Access Line) runs frequently to JR Sendai Station at 630 yen. Scheduled travel time is about 25 minutes.
Laboratory for Nanoelectronics
and Spintronics,
Research Institute of
Electrical Communication (RIEC),
Tohoku University