17th International WorkShop on New Group IV Semiconductor Nanoelectronics
November 9(Mon.)-10(Tues.), 2026
Sakura
Hall (2F Conference Room & 1F Lounge),
Katahira Campus, Tohoku University, Sendai, Japan
Co-sponsored
by
- Adopting
Sustainable Partnerships for Innovative Research Ecosystem (ASPIRE),
Japan Science and Technology Agency (JST)
-
Research Institute of Electrical Communication, Tohoku University
-
Cooperative Research Project Program of the Research Institute of
Electrical Communication, Tohoku University
|
Technical
Program (Version 2026-11/02)
|
|||
|
November
9 (Monday), 2026 |
|||
| 09:30 - 09:40 | |||
| Introductory
(Masao Sakuraba, Tohoku Univ., Japan) |
|||
|
[ Session 1 : Invited & Regular Talks] |
|||
| 09:40 - 10:10 (30 min) | |||
|
I-01. " |
Epitaxially grown {Si1-xGex/Si} multi-layers for 3D DRAM applications: impact of growth conditions on material quality", | ||
| (Invited) Roger Loo 1,2, M. Beggiato 1, Y. Shimura 1, D. Schippers 1, N. Rassoul 1, W. Vanherle 1, F. Seidel 1, K. Paulussen 1, J. Bogdanowicz 1, A. Merkulov 1, M. Ayyad 1, A. Belmonte 1, and R. Langer 1 1 Imec, Belgium 2 Dep. of Solid-State Sciences, Ghent University, Belgium |
|||
| 10:10 - 10:40 (30 min) | |||
| I-02. " |
Advanced Epitaxy Processes for State-of-the-Art SiGe:C BiCMOS and ePIC integration", |
||
| (Invited) Yuji Yamamoto 1,2, W.-C Wen 1, K. Kiyose 1, H. Rücker 1, S. Lischke 1, D. Steckler 1 and A. Mai 1,3 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany 2 Nagoya Univ., Japan 3 Tech. Univ. Appl. Sci. Wildau, Germany |
|||
| 10:40 - 11:00 (20 min) | |||
| O-01. " |
IHPs Advanced SiGe Device & Technology Developments", |
||
| Andreas
Mai 1,2 1 IHP - Leibniz-Institut für innovative Mikroelektronik,Germany 2 Tech. Univ. Appl. Sci. Wildau, Germany |
|||
| 11:00 - 11:20 (20 min) | |||
| O-02. " |
(tbd)", |
||
| Dan
Buca Forschungszentrum Jülich, Germany |
|||
| 11:20 - 11:30 Group Photo | |||
| 11:30 - 13:00 Lunch | |||
| [ Session 2 : Invited & Regular Talks ] | |||
| 13:00 - 13:30 (30 min) | |||
| I-03. " | SiGe Photonics platform with bandwidth beyond 110 GHz", | ||
| (Invited) D. Steckler 1, S. Lischke 1, Y. Yamamoto 1, A. Peczek 1, K. Kiyose 1 and L. Zimmermann 1,2 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany 2 Tech. Univ. Berlin, Germany |
|||
| 13:30 - 14:00 (30 min) | |||
| I-04. " | Semiconductor photocathode based on p-type GOS heterostructure", | ||
| (Invited) H. Shimawaki 1, M. Nagao 2 and K. Murakami 2, 1 Graduate School of Engineering, Hachinohe Inst. Technol., Japan 2 Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Japan |
|||
| 14:00 - 14:20 (20 min) | |||
| O-03. " | Local Charge Injection and Retention in Epitaxially Grown Si/SiGe Nanodot/Si Structures", | ||
| Jongeun Baek 1, Yuki
Imai 1, Yuji Yamamoto 1,2 and Katsunori
Makihara 1,2 1 Nagoya Univ., Japan 2 IHP Leibniz-Institut für innovative Mikroelektronik, Germany |
|||
| 14:20 - 14:40 Break | |||
| [ Session 3 : Invited Talks ] | |||
| 14:40 - 15:10 (30 min) | |||
| I-05. " | Challenges in reducing n+/p junction leakage current in Ge", | ||
| (Invited) Akira Toriumi Free Engineer, Japan |
|||
| |
|||
| 15:10 - 15:40 (30 min) | |||
| I-06. " | Characterization of slow traps in Ge MOS gate stacks and understanding of their physical origins", | ||
| (Invited) Shinichi Takagi 1,2, Mengnan Ke 2,3, Mitsuru Takenaka 2, and Kasidit Toprasertpong 2 1 Teikyo Univ., Japan 2 Univ. Tokyo, Japan 3 Yokohama National Univ., Japan |
|||
| 15:40 - 16:10 (30 min) | |||
| I-07. " | Magnetic Resonance and Rapid Scan ESR: Current Applications and Future Directions", | ||
| (Invited) O. Laguta, A. Sojka, J. Dubský, M. Šedivý, A. Solodovnyk, J. Dubnicka Midlikova, I. Zdeg, J. Hrubý, A. Marko, V.T. Santana and Petr Neugebauer Central European Institute of Technology, Brno Univ. Technol., Czech Republic |
|||
|
November
10 (Tuesday), 2026 |
|||
|
[ Session 4-1 : Short Talks for Poster ] |
|||
| 09:00 - 09:05 (5 min) | |||
|
P-01. " |
PFAS-Free Dry Etching of Epitaxial Si0.7Ge0.3 Using HBr Plasma", | ||
|
Sota
Ishii 1, Kotaro Ozaki 1,2, Eita
Yano 1, Ibuki Saburi 1, Yuki Imai 1,
Yuji Yamamoto 1,2 and Katsunori Makihara 1,2 1 Grad. School of Eng., Nagoya Univ., Japan 2 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany |
|||
| 09:05 - 09:10 (5 min) | |||
|
P-02. " |
Chemical Bonding States at AlN/GaN Interfaces Studied by X-ray Photoelectron Spectroscopy", | ||
| Sora Oya 1,
Yuki Imai 1, Kotaro Ozaki 1, Kenji Ito 2
and Katsunori Makihara 1 1 Grad. School of Eng., Nagoya Univ., Japan 2 IMaSS, Nagoya Univ., Japan |
|||
| 09:10 - 09:15 (5 min) | |||
|
P-03. " |
Impact of a Cyclic Process Sequence on the Structural and Luminescence Properties of Fe-silicide/Si Core-Shell Quantum Dots", | ||
| Eita
Yano 1, Yuki Imai 1, Yuji Yamamoto
1,2, Markus Andreas Schübert 2 and
Katsunori Makihara 1,2 1 Grad. School of Eng., Nagoya Univ., Japan 2 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany |
|||
| 09:15 - 09:20 (5 min) | |||
|
P-04. " |
Enhanced Thermoelectric and Mechanical Performance of Electrochemically Deposited Bismuth Telluride-Based Compounds Incorporating Biopolymers", | ||
| Jianghan
Tian, Nguyen
Van Toan and Takahito Ono Graduate School of Engineering, Tohoku Univ., Japan |
|||
| 09:20 - 09:25 (5 min) | |||
|
P-05. " |
Deposition of PtSe2 2D Films and Measurement of Their Piezo-Resistance", | ||
| Joichiro
Suo 1, Hiroaki Tamura 2, Ryuji
Hokari 2 and Takahito Ono 1 1 Tohoku Univ., Japan 2 NIDEC COMPONENTS CORPORATION, Japan |
|||
| 09:25 - 09:30 (5 min) | |||
|
P-06. " |
Enhancement of Crystal Growth via Acetonitrile Addition for Copper Iodide Electrodeposition", | ||
| Natsuki Oda 1,
Nguyen Van Toan 1 and Takahito Ono 1,2 1 Graduate School of Engineering, Tohoku Univ., Japan 2 Micro System Integration Center, Tohoku Univ., Japan |
|||
| |
|||
| 09:30 - 09:35 (5 min) | |||
|
P-07. " |
Effect of Fluid Temperature on Electromotive Force at the Graphene-Fluid Interface", | ||
| Shun Nishiya
1, Mitsuhiro Honda 2, Masaki Tanemura 2,
Ichiro Yamashita 3, Atsuki Komiya 4 and
Takeru Okada 1 1 Graduate School of Engineering, Tohoku Univ., Japan 2 Department of Physical Science and Engineering, Nagoya Institute of Technology, Japan 3 Graduate School of Engineering, Osaka University, Japan 4 Institute of Fluid Science, Tohoku University, Japan |
|||
| 09:35 - 09:40 (5 min) | |||
|
P-08. " |
Accurate Extraction of Ultra-Low Specific Contact Resistivity in ZrN/n-Ge Contacts", | ||
| Yajun
Feng 1, Chia-Yuan Kao 1,
Chao-Ching Cheng 2, Iuliana Radu 2,
Guang-Li Luo 3, Keisuke Yamamoto 4,5 and
Dong Wang 1,5 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu Univ., Japan 2 Corporate Research, Taiwan Semiconductor Manufacturing Company, Taiwan 3 Taiwan Semiconductor Research Institute, NIAR, Taiwan 4 Research and Education Institute for Semiconductors and Informatics, Kumamoto Univ., Japan 5 Faculty of Engineering Sciences, Kyushu Univ., Japan |
|||
| 09:40 - 09:45 (5 min) | |||
| P-09. " | Ge-MOSFET Phototransistors with Gate Architectures for CMOS-Compatible NIR Detection", | ||
| Kai Hsiang Liao 1,
Yajun Feng 1 and Dong Wang 1,2 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu Univ., Japan 2 Faculty of Engineering Sciences, Kyushu Univ., Japan |
|||
|
|
|||
| 09:45 - 09:50 (5 min) | |||
| P-10. " | Crystallinity improvement of Ge0.80Sn0.20 epitaxial layer on Si(001) substrate using a sputtering method", | ||
| Kousaku Goto 1,
Shigehisa Shibayama 1, Tomo Tanaka 2,
Yasutomo Omori 2, Rahmat Hadi Saputro 3,
Hiroyuki Ishii 3, Tatsuro Maeda 3,
Mitsuo Sakashita 1, Masashi Kurosawa 1
and Osamu Nakatsuka 1,4 1 Graduate School of Engineering, Nagoya Univ., Japan 2 NEC corporation, Japan 3 National Institute of Advanced Industrial Science and Technology (AIST), Japan 4 IMaSS, Nagoya Univ., Japan |
|||
|
|
|||
| 09:50 - 09:55 (5 min) | |||
| P-11. " | Pulsed Laser Annealing for Recrystallization and Dopant Activation in Ion-Implanted High-Sn-Composition Ge1−xSnx Layers", | ||
| Taehan Kim 1, Shigehisa
Shibayama 1, Ryoji Katsube 1, Noritaka
Usami 1,2,3, Mitsuo Sakashita 1, Masashi Kurosawa 1, and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Japan 2 IMaSS, Nagoya Univ., Japan 3 InFuS, Nagoya Univ., Japan |
|||
|
|
|||
| 09:55 - 10:00 (5 min) | |||
| P-12. " | Suppression of the leakage current in Ge1−xSnx/n-Ge diodes with steep mesa structure", | ||
| Kei Yamamoto 1,
Shigehisa Shibayama 1, Mitsuo Sakashita 1,
Masashi Kurosawa 1 and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Japan 2 IMaSS, Nagoya Univ., Japan |
|||
|
|
|||
| 10:00 - 10:05 (5 min) | |||
| P-13. " | Pattern Transfer Deviation in Photolithography on 3C/4H-SiC Hybrid Substrate with Trench Structures", | ||
| Tetsuya Ueno 1,2, Masao
Sakuraba 1,2 and Shigeo Sato 1,2 1 Laboratory for Nanoelectronics and Spintronics, Research Institute Electrical Communication, Tohoku Univ., Japan 2 Graduate School Engineering, Tohoku Univ., Japan |
|||
|
|
|||
| 10:05 - 10:10 (5 min) | |||
| P-14. " | Electrical Characteristics of P-Doped Si1-xCx Films Using Electron-Cyclotron-Resonance Ar Plasma Enhanced Chemical Vapor Deposition", | ||
| Hiroto Kawakami 1,2,
Tetsuya Ueno 1,2, Masao Sakuraba 1,2 and
Shigeo Sato 1,2 1 Laboratory for Nanoelectronics and Spintronics, Research Institute Electrical Communication, Tohoku Univ., Japan 2 Graduate School Engineering, Tohoku Univ., Japan |
|||
|
|
|||
| [ Session 4-2 : Poster Presentation ] | |||
| 10:10 - 11:20 Poster Presentation (P-01 ~ P-14, 70 min, 1F Lounge ) | |||
| 11:20 - 12:30 Lunch | |||
| [ Session 5: Invited & Regular Talks ] | |||
| 12:30 - 13:00 (30 min) | |||
| I-08 " | Low Temperature Gate Stack fabrication for Ge and GeSn Novel Devices", | ||
| (Invited) Keisuke Yamamoto 1,2, Taisei Aso 2, Hajime Kuwazuru 2 and Dong Wang 2 1 REISI, Kumamoto Univ., Japan 2 Kyushu Univ., Japan |
|||
| 13:00 - 13:30 (30 min) | |||
| I-09 " | Fabrication of n-GeSn-based Lateral Spin-Valve Devices with Co-Based Heusler Alloy Electrodes", | ||
| (Invited) Takamasa Usami 1,2, Shumpei Fujii 3, Kenji Oki 3, Natsuru Sayo 3, Sora Obinata 1,2,3, Shinya Yamada 1,2,3, Ambrishkumar J. Devaiya 4, Qing-Tai Zhao 4, Dan Buca 4 and Kohei Hamaya 1,2,3 1 Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Univ. Osaka, Japan 2 Center for Spintronics Research Network, Graduate School of Engineering Science, Univ. Osaka, Japan 3 Department of Systems Innovation, Graduate School of Engineering Science, Univ. Osaka, Japan 4 Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, Germany |
|||
| 13:30 - 13:50 (20 min) | |||
| O-04. " | Pure Spin Current Transport in Ge/SiGe Multilayer Structures with Different Band Profiles", | ||
| Sora
Obinata 1, Kenji Oki 1,2, Shunsuke
Tanaka 1,2, Shuya, Kikuoka 3, Michihiro
Yamada 3, Kentarou Sawano 3 and Kohei
Hamaya 1,2,4 1 Center for Spintronics Research Network, Graduate School of Engineering Science, Univ. Osaka, Japan 2 Department of Systems Innovation, Graduate School of Engineering Science, Univ. Osaka, Japan 3 Advanced Research Laboratories, Tokyo City Univ., Japan 4 Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Univ. Osaka, Japan |
|||
| 13:50 - 14:10 (20 min) | |||
| O-05. " | Structural and Magnetic Characterization of Low-Temperature-Grown MnGa/Ge/MnGa Vertical Stacks", | ||
| M. Nishioka 1, D. Kumar
3, T. Usami 2,4, S. Yamada 1,2,4,
S. Mizukami 3,5 and K. Hamaya 1,2,4 1 Grad. Sch. Eng. Sci., Univ. Osaka, Japan 2 CSRN, Grad. Sch. Eng. Sci., Univ. Osaka, Japan 3 WPI-AIMR, Tohoku Univ., Japan 4 OTRI-SPIN, Univ. Osaka, Japan 5 CSIS, Tohoku Univ., Japan |
|||
| 14:10 - 14:20 Closing Remarks (Masao Sakuraba, Tohoku Univ., Japan) | |||
| 14:20 - 14:30 Group Photo | |||