16th International WorkShop on New Group IV
Semiconductor Nanoelectronics
(Satellite
workshop of ICSI/ISTDM 2025)
November
17-18, 2025,
Conference Room
& Room A401 (4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Adopting
Sustainable Partnerships for Innovative Research Ecosystem (ASPIRE),
Japan Science and Technology Agency (JST)
-
Cooperative Research Project Program of the Research Institute of
Electrical Communication, Tohoku University
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Technical
Program
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November
17 (Monday), 2025 |
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| 08:50 - 09:00 | |||
| Introductory
Masao Sakuraba (RIEC, Tohoku Univ.) |
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[ Session 1 : Invited & Regular Talks] |
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09:00 - 09:20 (20 min) |
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| O-01. " | Introduction of the ASPIRE project: Versatile Quantum Engineering of Group-IV Alloy Materials for Semiconductor Heterogeneous Integrated Devices", | ||
| Osamu
Nakatsuka Graduate School of Engineering, Nagoya University, Japan |
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| 09:20 - 09:50 (30 min) | |||
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I-01. " |
JST / ASPIRE project Versatile Quantum Engineering of Group-IV Alloy Materials for Semiconductor Heterogeneous Integrated Devices: Imec’s involvement", | ||
| (Invited) Roger Loo 1,2, Y. Shimura 1, H. Kuwazuru 1,3, K. Yamamoto 3,4, D. Wang 3, C. Porret 1, T. Dursap 1, A. Akula 1, D. Schippers 1, O. Nakatsuka 5 and R. Langer 1 1 Imec, Belgium 2 Dep. of Solid-State Sciences, Ghent University, Belgium 3 Faculty of Eng. Science, Kyushu University, Japan 4 Kumamoto Univ., Japan 5 Graduate School of Engineering, Nagoya University, Japan |
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| 09:50 - 10:20 (30 min) | |||
| I-02. " |
Challenges and research perspectives in Aspire project", |
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| (Invited) Dan Buca 1 1 Forschungszentrum Jülich, Germany |
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| 10:20 - 10:50 (30 min) | |||
| I-03. " |
SiGe Photonic Technologies for Sustainable Sensor Applications", |
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| (Invited) Andreas Mai 1,2, Tabea Fünning 1, Christian Mai 1 and Patrick Heise 1,3 1 IHP - Leibniz-Institut für innovative Mikroelektronik,Germany 2 Technical University of Applied Science Wildau, Germany 3 Technical University of Applied Science Mittelhessen, Germany |
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| 10:50 - 11:20 (30 min) | |||
| I-04. " |
Vertically Stacked Ge Spintronics Devices on Si", |
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| (Invited) Kohei Hamaya 1,2,3, Shimon Watahiki 2, Sora Obinata 1,3, Shuya Kikuoka 4, Michihiro Yamada 4, Kentarou Sawano 4 and Shinya Yamada 1,2,3 1 Center for Spintronics Research Network, Graduate School of Engineering Science, The University of Osaka, Japan 2 Department of Systems Innovation, Graduate School of Engineering Science, The University of Osaka, Japan 3 Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka, Japan 4 Advanced Research Laboratories, Tokyo City University, Japan |
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| 11:20 - 12:20 Group Photo & Lunch | |||
| [ Session 2 : Invited & Regular Talks ] | |||
| 12:20 - 12:50 (30 min) | |||
| I-05. " | Si Atomic-Layer Epitaxy in Ge Using SiH2Cl2", | ||
| (Invited) Yuji Yamamoto 1,2, W.-C. Wen 1, M.A. Schubert 1, F. Bärwolf 1, D. Steckler 1, J. Murota 3 and B. Tillack 1,4 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany 2 Nagoya University, Japan 3 Micro System Integration Center, Tohoku University, Japan 4 Technische Universität Berlin, Germany |
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| 12:50 - 13:20 (30 min) | |||
| I-06. " | Low temperature SiGe:B source/drain epitaxy for CFET applications", | ||
| (Invited) Thomas Dursap 1, C. Porret 1, A. Merkulov 1, P. Favia 1, R. Langer 1, M.-S. Kim 1, N. Hiroguchi 1 and R. Loo 1,2, 1 Imec, Kapeldreef 75, 3001 Leuven, Belgium 2 Dep. Of Solid-State Sciences, Ghent University, Krijgslaan 285, 9000 Ghent, Belgium |
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| 13:20 - 13:50 (30 min) | |||
| I-07. " | Low Temperature Gate Stack fabrication for Ge and GeSn Novel Devices", | ||
| (Invited) Keisuke Yamamoto 1,2, Taisei Aso 2, Hajime Kuwazuru 2 and Dong Wang 2 1 REISI, Kumamoto Univ., Japan 2 Kyushu Univ., Japan |
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| 13:50 - 14:10 (20 min) | |||
| O-02. " | Formation of Ultrathin Single-Crystalline NiSi2-on-Insulator by RTA of a-Si/Ni Stacked Films Formed on SOI Substrates", | ||
| Yuki
Imai 1, Shun Tanida 1, Yuji
Yamamoto 2,1, Noriyuki Taoka 3 and
Katsunori Makihara 1,2 1 Graduate School of Engineering, Nagoya University, Japan 2 IHP – Leibniz-Institut für Innovative Mikroelektronik, Germany 3 Graduate School of Engineering, Aichi Institute of Technology, Japan |
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| 14:10 - 14:30 (20 min) | |||
| O-03. " | Epitaxial growth of Si/SiGe and Ge/SiGe stacks using isotopically purified 28SiH4 and 73Ge-depleted GeH4 for spin qubit", | ||
| Yosuke Shimura 1, R.
Loo 1,2, C. Godfrin 1, S. Kubicek 1,
D. Wan 1 and K. De Greve 1,3 1 Imec, Belgium 2 Dep. of Solid-State Sciences, Ghent University, Belgium 3 KU Leuven, Micro and Nano Systems, Belgium |
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| 14:30 - 14:50 (20 min) | |||
| O-04. " | CSiGeSn Epitaxy: Future Isovalent Isomorphism in Group-IV Materials", | ||
| Ambrishkumar J. Devaiya 1,4,
Omar Concepcion 1, Thomas Fischer 4,
Andreas Tiedemann 1, Giovanni Capellini 2,3,
Sanjay Mathur 4, Detlev Grützmacher 1
and Dan Buca 1 1 Peter Gruenberg Institute-9 and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, Germany 2 IHP - Leibniz Institut für innovative Mikroelektronik, Germany 3 Dipartimento di Scienze, Università Roma Tre, Italy 4 Institute of Inorganic and Materials Chemistry, University of Cologne, Germany |
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| 14:50 - 15:10 Break | |||
| [ Session 3 : Invited Talks ] | |||
| 15:10 - 15:40 (30 min) | |||
| I-08. " | Progress in multicrystalline informatics", | ||
| (Invited) Noritaka Usami 1,2,3 1 Graduate School of Engineering, Nagoya University, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan 3 Institutes of Innovation for Future Society, Nagoya University, Japan |
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| 15:40 - 16:10 (30 min) | |||
| I-09. " | In-situ Temperature Monitoring of Silicon Wafer During Plasma Processing by Optical Interference Contactless Thermometry", | ||
| (Invited) Seiichiro. Higashi, R. Goto, J. Yu and H. Hanafusa Graduate School of Advanced Science and Engineering, Hiroshima University, Japan |
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| 16:10 - 16:40 (30 min) | |||
| I-10. " | (111)-oriented thin body GOI n-MOSFET fabricated by wafer bonding technology", | ||
| (Invited) Shinichi Takagi 1,2, Xueyang Han 1, Kei Sumita 1, Mitsuru Takenaka 1 and Kasidit Toprasertpong 1 1 The University of Tokyo, Japan 2 Teikyo University, Japan |
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| 16:40 - 17:10 (30 min) | |||
| I-11. " | Imprinted n+-Si/p-Ge hetero-junction with a thin interface layer", | ||
| (Invited) Akira Toriumi Free Engineer, Japan |
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November
18 (Tuesday), 2025 |
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[ Session 4-1 : Short Talks for Poster ] |
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| 08:30 - 08:35 (5 min) | |||
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P-01. " |
Fabrication Process of Heavily-Doped Si Tunnel Diodes for Achieving Negative Differential Resistance for Neuromorphic Computing", | ||
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Seima
Sato 1, Masao Sakuraba 1,2 and Shigeo
Sato 1,2 1 Laboratory for Nanoelectronics and Spintronics, Research Institute Electrical Communication, Tohoku University, Japan 2 Graduate School Engineering, Tohoku University, Japan |
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| 08:35 - 08:40 (5 min) | |||
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P-02. " |
Process Development of Interface Structure Control for Next-Generation High-Performance SiC Power MOS Transistors", | ||
| Tetsuya Ueno 1,
Masao Sakuraba 1,2 and Shigeo Sato 1,2 1 Laboratory for Nanoelectronics and Spintronics, Research Institute Electrical Communication, Tohoku University, Japan 2 Graduate School Engineering, Tohoku University, Japan |
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| 08:40 - 08:45 (5 min) | |||
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P-03. " |
Measurement of thermoelectric Properties of Electrodeposited CuI and Cs-CuI membranes", | ||
| Natsuki
Oda 1, Kei Sakamoto 1, Nguyen Van
Toan 1, Jakrit Gobpant 2, Nattharika Theekhasuk 2,
Aparporn Sakulkalavek 2 and Takahito Ono 1,3 1 Graduate School of Engineering, Tohoku University, Japan 2 Department of Physics, School of Science, King Mongkut's Institute of Technology Ladkrabang, Bangkok, Thailand 3 Micro System Integration Center, Tohoku University, Japan |
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| 08:45 - 08:50 (5 min) | |||
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P-04. " |
Enhanced Thermoelectric Performance of Electrochemically Deposited Cellulose Nanofiber-Bismuth Telluride Nanocomposite", | ||
| Jianghan
Tian, Nguyen Van Toan, and Takahito Ono Graduate School of Engineering, Tohoku University, Japan |
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| 08:50 - 08:55 (5 min) | |||
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P-05. " |
Evaluation of Ge/SiGe(111) Multilayer Structures for Spintronic Applications", | ||
| Shunsuke
Tanaka 1, Sora Obinata 2, Shuya
Kikuoka 3, Kenji Oki 1,2, Kentarou
Sawano 3, Kohei Hamaya 1,2,4 1 Department of Systems Innovation, Graduate School of Engineering Science, The University of Osaka, Japan 2 Center for Spintronics Research Network, Graduate School of Engineering Science, The University of Osaka, Japan 3 Advanced Research Laboratories, Tokyo City University, Japan 4 Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka, Japan |
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| 08:55 - 09:00 (5 min) | |||
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P-06. " |
Charge Transport Properties through Multiple-Stacked Si Nanodots", | ||
| Haruto Kubota
1, Jongeun Baek 1, Yuki Imai 1,
Noriyuki Taoka 2 and Katsunori Makihara 1 1 Nagoya University, Japan 2 Aichi Institute of Technology, Japan |
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| 09:00 - 09:05 (5 min) | |||
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P-07. " |
Radical Effects on Si and Si0.7Ge0.3 during CF4/H2 Plasma Exposure", | ||
| Ibuki Saburi
1, Yuki Imai 1, Takayoshi Tsutsumi 1,2,
Kenji Ishikawa 1,2, Yuji Yamamoto 3,1,
Wei-Chen Wen 3 and Katsunori Makihara 1,3 1 Graduate School of Engineering, Nagoya University, Japan 2 Center for Low-temperature Plasma Sciences, Nagoya University, Japan 3 IHP – Leibniz-Institut für Innovative Mikroelektronik, Germany |
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| 09:05 - 09:10 (5 min) | |||
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P-08. " |
Evaluation of Si-Nanosheets Formed by CF4/H2 Plasma Etching of Si0.7Ge0.3/Si/Si0.7Ge0.3 Stacked Structures", | ||
| Kotaro
Ozaki 1, Yusuke Imai 1, Yuki Imai
1, Takayoshi Tsutsumi 2, Kenji Ishikawa 2, Yuji Yamamoto 3,1, Wei-Chen Wen 3, Ibuki Saburi 1 and Katsunori Makihara 1,3 1 Graduate School of Engineering, Nagoya University, Japan 2 Center for Low-temperature Plasma Sciences, Nagoya University, Japan 3 IHP-Leibniz-Institut für Innovative Mikroelektronik, Germany |
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| 09:10 - 09:15 (5 min) | |||
| P-09. " | Analysis of Interfacial Passivation Mechanism of Niobium Titanium Oxide on Silicon", | ||
| Shohei Fukaya 1,
Kazuhiro Gotoh 1,2,3, Yasuyoshi Kurokawa 1,4,
and Noritaka Usami 1,4,5 1 Graduate School of Engineering, Nagoya University, Japan 2 Graduate School of Science and Technology, Niigata University, Japan 3 Interdisciplinary Research Center for Carbon-Neutral Technologies, Niigata University, Japan 4 Institutes of Innovation for Future Society, Nagoya University, Japan 5 Institute of Materials and Systems for Sustainability, Nagoya University, Japan |
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| 09:15 - 09:20 (5 min) | |||
| P-10. " | Strain Effects on the Photoluminescence of Ge QDs on Si Nanotips: Modeling and Experimental Analysis", | ||
| Diana Ryzhak 1, Petr
Klenovský 2, Johannes Aberl 3, Enrique
Prado-Navarrete 3, Lada Vukušić 3,
Oliver Skibitzki 1, Marvin Hartwig Zoellner 1,
Markus Andreas Schubert 1, Moritz Brehm 3,
Davide Spirito 4 and Giovanni Capellini 1,5 1 IHP – Leibniz Institute or High Performance Microelectronics, Germany 2 Department of Condensed Matter Physics, Faculty of Science, Masaryk University, Czech Republic 3 Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, Austria 4 BCMaterials, Basque Center for Materials, Applications and Nanostructures, Spain 5 Dipartimento di Scienze, Università Roma Tre, Italy |
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| 09:20 - 09:25 (5 min) | |||
| P-11. " | Growth of Vertically Oriented Ge Wires on Quartz Substrate by Plasma Enhanced CVD", | ||
| Michael Uematsu and Shin-ichi
Kobayashi Graduate School of Engineering, Tokyo Polytechnic University, Japan |
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| 09:25 - 09:30 (5 min) | |||
| P-12. " | Effects of Post-Annealing on Sn-Doped Poly-Ge Thin Films on Insulating Substrates", | ||
| Reo Imada 1, Takuto
Watanabe 1, Takashi Kajiwara 1, and
Taizoh Sadoh 2 1 Department of Electronics, Kyushu University, Japan 2 Center for Semiconductor and Device Ecosystem, Kyushu University, Japan |
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| 09:30 - 09:35 (5 min) | |||
| P-13. " | Large-Grain Crystallization of Si Thin Films on Insulator by Sn-Doping", | ||
| Tomoki Tokunaga 1,
Shuma Akiyoshi 1, Takashi Kajiwara 1,
and Taizoh Sadoh 2 1 Department of Electronics, Kyushu University, Japan 2 Center for Semiconductor and Device Ecosystem, Kyushu University, Japan |
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| 09:35 - 09:40 (5 min) | |||
| P-14. " | Low-Temperature Fabrication of GeSn Photodiodes Featuring a Metal/Ultra-Thin Oxide/Semiconductor/Metal Structure", | ||
| Yajun Feng 1, Genya
Kuroeda 1, Keisuke Yamamoto 2,3,
Shigehisa Shibayama 4, Osamu Nakatsuka 4,5,
and Dong Wang 1,3 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Japan 2 Research and Education Institute for Semiconductors and Informatics, Kumamoto University, Japan 3 Faculty of Engineering Sciences, Kyushu Univ., Japan 4 Graduate School of Engineering, Nagoya Univ., Japan 5 IMaSS, Nagoya Univ., Japan |
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| 09:40 - 09:45 (5 min) | |||
| P-15. " | Improvement of Electrical Properties and VFB Control of SiO2/GeO2 Gate Stack in Low Temperature Process", | ||
| Hajime Kuwazuru 1, Dong
Wang 2 and Keisuke Yamamoto 2,3 1 Interdisciplinary Graduate School of Engineering Science, Kyushu University, Japan 2 Faculty of Engineering Science, Kyushu University, Japan 3 Research and Education Institute for Semiconductors and Informatics, Kumamoto University, Japan |
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| 09:45 - 09:50 (5 min) | |||
| P-16. " | Fabrication and Characterization of Ge Photodetectors with a Metal/Ge/Ultra-Thin Oxide/Metal Structure for CMOS Compatible Optoelectronic Integration", | ||
| Genya Kuroeda
1, Yajun Feng 1, Keisuke Yamamoto 2,3
and Dong Wang 3 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Japan 2 Research and Education Institute for Semiconductors and Informatics, Kumamoto University, Japan 3 Faculty of Engineering Sciences, Kyushu University, Japan |
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| 09:50 - 09:55 (5 min) | |||
| P-17. " | Atomic Layer Deposition of GeO2 for Surface Passivation in GeSn/Ge pn Diodes", | ||
| Yoshiki Kato 1, Mitsuo
Sakashita 1, Masashi Kurosawa 1, Osamu
Nakatsuka 1,2 and Shigehisa Shibayama 1 1 Graduate School of Engineering, Nagoya University, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan |
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| 09:55 - 10:00 (5 min) | |||
| P-18. " | Epitaxial growth of Ge1−xSnx layers with various Sn composition on Si substrates using sputtering method", | ||
| Kousaku Goto
1, Shigehisa Shibayama 1, Mitsuo
Sakashita 1, Masashi Kurosawa 1 and
Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Japan 2 IMaSS, Nagoya Univ., Japan |
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| 10:00 - 10:05 (5 min) | |||
| P-19. " | Phonon-drag effect observed for phosphorus-doped Si films and FZ-Si(001) substrates interface", | ||
| Yuki Kimura 1,
Shigehisa Shibayama 1, Mitsuo Sakashita 1,
Osamu Nakatsuka 1,2, Yasuyoshi Kurokawa 1,3,
Noritaka Usami 1,2,3, Takayoshi Katase 4
and Masashi Kurosawa 1 1 Graduate School of Engineering, Nagoya University, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan 3 Institutes of Innovation for Future Society, Nagoya University, Japan 4 Materials and Structures Laboratory, Institute of Integrated Research, Institute of Science Tokyo, Japan |
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| 10:05 - 10:10 (5 min) | |||
| P-20. " | Synthesis of GeH layers on Ge/Si(111) at room temperature", | ||
| Kaito Nakajima
1, Atsuki Nakayama 1, Wei-Chen Wen 2,
Yuji Yamamoto 2, Shigehisa Shibayama 1,
Mitsuo Sakashita 1, Osamu Nakatsuka 1,3,
Masaaki Araidai 1,3 and Masashi Kurosawa 1 1 Graduate School of Engineering, Nagoya University, Japan 2 IHP – Leibniz Institute for High Performance Microelectronics, Germany 3 Institute of Materials and Systems for Sustainability, Nagoya University, Japan |
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| 10:10 - 10:15 (5 min) | |||
| P-21. " | Examination of the transfer process of a Ge layer on sapphire substrates", | ||
| Mahiro Tanaka 1,
Wei-Chen Wen 2, Yuji Yamamoto 2,
Shigehisa Shibayama 1, Mitsuo Sakashita 1,
Osamu Nakatsuka 1,3 and Masashi Kurosawa 1 1 Grad. Sch. of Eng., Nagoya Univ., Japan 2 IHP-Leibniz Institute for High Performance Microelectronics, Germany 3 IMaSS, Nagoya Univ., Japan |
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| 10:15 - 10:20 (5 min) | |||
| P-22. " | Formation of Ge epitaxial layer on Si(111) substrate using sputtering method", | ||
| Taichi Okuda 1, Akio
Ohta 2, Ryo Yokogawa 3,4,5, Mitsuo
Sakashita 1, Masashi Kurosawa 1, Osamu
Nakatsuka 1 and Shigehisa Shibayama 1 1 Grad. Sch. of Eng., Nagoya University, Japan 2 Faculty of Sci., Fukuoka University, Japan 3 MREL, Meiji University, Japan 4 RISE, Hiroshima University, Japan 5 Grad. Sch. of Adv. Sci. and Eng., Hiroshima University, Japan |
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| 10:20 - 10:25 (5 min) | |||
| P-23. " | Demonstration of Epitaxial Growth of Ultra-High Sn Composition Ge1−xSnx on GaSb(111)", | ||
| Kaito Shibata 1,
Shigehisa Shibayama 1, Mitsuo Sakashita 1,
Masashi Kurosawa 1 and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya University, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan |
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| [ Session 4-2 : Poster Presentation ] | |||
| 10:30 - 11:50 Poster Presentation (P-01 ~ P-23, 80 min, Room A401 + ... ) | |||
| 11:50 - 13:10 Lunch | |||
| [ Session 5: Invited & Regular Talks ] | |||
| 13:10 - 13:40 (30 min) | |||
| I-12 " | Development of GeSn/GeSiSn resonant tunneling diode operating at room temperature", | ||
| (Invited) Shigehisa Shibayama 1, Shota Torimoto 1, Shuto Ishimoto 1, Yoshiki Kato 1, Mitsuo Sakashita 1, Masashi Kurosawa 1 and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya University, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan |
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| 13:40 - 14:10 (30 min) | |||
| I-13 " | Semiconductor-Like Bio-Composite Films for Resistive Biosensing Applications", | ||
| (Invited) Takahito Ono 1, Yi-Hsiu Kao 1, Reo Takahashi 1, Rahul Kumar 1, Truong Thi Kim Tuoi 1, Nguyen Van Toan 1, Mikio Fukuhara 2, Tetsuo Samoto 2, Toshiyuki Hashida 2 and Takaaki Abe 3 1 Department of Mechanical Systems Engineering, Tohoku University, Japan 2 New Industry Creation Hatchery Centre, Tohoku University, Japan 3 School of Medicine, Tohoku University, Japan |
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| 14:10 - 14:40 (30 min) | |||
| I-14. " | Development of High-Performance Group-IV Semiconductor Devices for Robust Neuromorphic Computing Integrated Circuits", | ||
| (Invited) Masao Sakuraba 1,2, Shigeo Sato 1,2 and Hiroyuki Nagasawa 3 1 Laboratory for Nanoelectronics and Spintronics, Research Institute Electrical Communication, Tohoku University, Japan 2 Gradaduate School of Engineering, Tohoku University, Japan 3 CUSIC Inc., Japan |
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| 14:40 - 15:00 (20 min) | |||
| O-05. " | Room-temperature Spin Injection and Transport in Ge/SiGe Multilayer Structures", | ||
| Sora Obinata 1, Kenji
Oki 1,2, Shunsuke Tanaka 1,2, Shuya,
Kikuoka 3, Kentarou Sawano 3 and Kohei
Hamaya 1,2,4 1 Center for Spintronics Research Network, Graduate School of Engineering Science, The University of Osaka, Japan 2 Department of Systems Innovation, Graduate School of Engineering Science, The University of Osaka, Japan 3 Advanced Research Laboratories, Tokyo City University, Japan 4 Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka, Japan |
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| 15:00 - 15:20 (20 min) | |||
| O-06. " | Control of Localized SiGe Nanodot Formation in Si/SiGe superlattices via Strain Engineering", | ||
| Wei-Chen Wen 1,
Katsunori Makihara 2,1, Andreas Mai 1,3,
Bernd Tillack 1,4 and Yuji Yamamoto 1,2 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany 2 Nagoya University, Japan 3 Technical University of Applied Science Wildau, Germany 4 Technische Universität Berlin, Germany |
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| 15:20 - 15:30 Closing Remarks & Group Photo | |||