October 21-22,
2024,
Conference Room
& Room A401 (4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Cooperative Research Project
Program of the Research Institute of Electrical Communication, Tohoku
University
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Technical
Program
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October
21 (Monday), 2024 |
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| 08:50 - 09:00 | |||
| Introductory
Masao Sakuraba (RIEC, Tohoku Univ.) |
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[ Session 1 : Invited & Regular Talks] |
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09:00 - 09:30 (30 min) |
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| I-01. " | Group IV-based Devices Integration for Functional and Sustainable Technologies – Benefits and Drawbacks of Monolithic and Hybrid Integration Approaches", | ||
| (Invited) Andreas Mai 1,2, Sebastian Schulze 1, and Christian Mai 1 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 2 Technical Univ. of Applied Science Wildau, Hochschulring 1, 15745 Wildau, Germany |
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| 09:30 - 10:00 (30 min) | |||
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I-02. " |
Comparative Study of GOI Fabrication Methods for High Electrical Properties", | ||
| (Invited) Keisuke Yamamoto 1,2, Noboru Shimizu 2, Dong Wang 2, Hiroshi Nakashima 2, Roger Loo 3,4, Clément Porret 3, Jinyoun Cho 5, Kristof Dessein 5, and Valérie Depauw 3 1 Kumamoto Univ., 2-39-1 Kurokami, Chuo-ku, Kumamoto, Japan 3 imec, Kapeldreef 75, 3001 Leuven, Belgium 4 Ghent University, Department of Solid-State Sciences, Krijgslaan 281, building S1, 9000 Ghent, Belgium 5 Umicore, Electro-Optic Materials, Watertorenstraat 33, 2250 Olen, Belgium |
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| 10:00 - 10:20 (20 min) | |||
| O-01. " |
Low temperature fabrication of SiO2/GeO2/Ge gate stack and its electrical/structural analysis", |
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| Hajime Kuwazuru 1,
Taisei Aso 1, Dong Wang 2, and Keisuke
Yamamoto 2,3 1 IGSES, Kyushu Univ., 6-1 Kasuga-koen, Kasuga , Fukuoka 815-8580, Japan 2 FES, Kyushu Univ., 6-1 Kasuga-koen, Kasuga , Fukuoka 815-8580, Japan 3 REISI, Kumamoto Univ., 2-39-1 Kurokami, Chuo-ku, Kumamoto 860-8555, Japan |
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| 10:20 - 10:50 (30 min) | |||
| I-03. " |
Formation and Light Emission Properties of Fe-silicide-Core/Si-Shell Quantum Dots", |
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| (Invited) Katsunori Makihara Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan |
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| 10:50 - 11:20 (30 min) | |||
| I-04. " |
Explorer and Development of Very-High-Sn-Content Ge1−xSnx Epitaxy for Electronic and Optoelectronic Applications", |
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| (Invited) Osamu Nakatsuka 1,2, Shigehisa Shibayama 1, Masashi Kurosawa 1, and Mitsuo Sakashita 1 1 Grad. Sch. of Eng., Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan |
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| 11:20 - 12:20 Lunch | |||
| [ Session 2 : Invited & Regular Talks ] | |||
| 12:20 - 12:50 (30 min) | |||
| I-05. " | Thermoelectric properties of CMOS-compatible GeSn binary alloys at room temperature", | ||
| (Invited) J. Tiscareño-Ramírez 1, O. Concepción 1, F. Rivadulla 2, D. Grützmacher 1, and Dan Buca 1 1 Peter-Grünberg-Institute (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, Willhelm-Johnen-Strasse, Jülich 52428, Germany 2 Centro Singular de Investigación en Química Biológica y Materiales Moleculares (CiQUS), Universidad de Santiago de Compostela, Spain |
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| 12:50 - 13:20 (30 min) | |||
| I-06. " | Giant thermoelectric power observed in group-IV-based films with high carrier concentrations at low temperatures", | ||
| (Invited) Masashi Kurosawa 1, Takayoshi Katase 2, Shigehisa Shibayama 1, Mitsuo Sakashita 1, Osamu Nakatsuka 1,3 1 Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan 2 MDX Research Center for Element Strategy, Institute of Integrated Research, Inst. Sci. Tokyo, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8501, Japan 3 Institute of Materials and Systems for Sustainability, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan |
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| 13:20 - 13:40 (20 min) | |||
| O-02. " | The Dependence of Effective Barrier Height on Thickness of Various Oxide Films in Metal Insulator Germanium Structures", | ||
| Yajun Feng, Noboru Shimizu, Keisuke
Yamamoto, and Dong Wang Interdisciplinary Graduate School of Engineering Sciences, Kyushu Univ., 6-1, Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan |
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| 13:40 - 14:00 (20 min) | |||
| O-03. " | Selective Growth of Self-Assembling Si Quantum Dots on SiO2 Line Patterns", | ||
| Jingeun
Baek, Ryoya Tsuji, Yuki Imai, Seiichi Miyazaki, and
Katsunori Makihara Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan |
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| 14:00 - 14:30 (30 min) | |||
| I-07. " | Deoxidation of semiconductors and metals by controlling oxygen pressure", | ||
| (Invited) Kazuhiko Endo Institute of Fluid Science, Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan |
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| 14:30 - 14:50 Group Photo & Break (20 min) | |||
| [ Session 3 : Invited & Regular Talks ] | |||
| 14:50 - 15:20 (30 min) | |||
| I-08. " | Impact of free carriers on electronic structure of germanium - Beyond the rigid band model -", | ||
| (Invited) Akira Toriumi Free Engineer, Yokohama, Japan |
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| 15:20 - 15:50 (30 min) | |||
| I-09. " | Approach to mobility enhancement in extremely-thin body Ge-On-Insulator MOSFETs", | ||
| (Invited) Shinichi Takagi, Xueyang Han, Chia-Tsong Chen, Kei Sumita, Mitsuru Takenaka and Kasidit Toprasertpong Univ. Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 Japan |
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| 15:50 - 16:20 (30 min) | |||
| I-10. " | Recent progress on Ge spintronic technologies", | ||
| (Invited) Kohei Hamaya 1.2 1 Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka Univ., 1-3 Machikaneyama, Toyonaka 560-8531, Japan 2 Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, Osaka Univ., Yamadaoka 2-1, Suita, Osaka 565-0871, Japan |
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| 16:20 - 16:50 (30 min) | |||
| I-11. " | Low-Temperature Growth of High-Quality Poly-Crystalline Group-IV Thin-Films on Insulator by Solid-Phase Crystallization Combined with Sn-Doping", | ||
| (Invited) Shuma Akiyoshi 1, Takuto Watanabe 1, Ryu Hashimoto 1, Takeshi Kajiwara 1, Kenta Moto 2, Keisuke Yamamoto 2, and Taizoh Sadoh 1 1 Department of Electronics, Kyushu Univ., 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan 2 IGSES, Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan |
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| 16:50 - 17:10 (20 min) | |||
| O-04. " | Fabrication of CMOS Inverter on Polycrystalline Ge Formed by Solid phase Crystallization on Glass Substrate", | ||
| Atsuki Morimoto 1,
Linyu Huang 1, Kota Igura 2, Takamitsu
Ishiyama 2, Kaoru Toko 2, Dong Wang 1,
and Keisuke Yamamoto 1 1 Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka, 816-8580, Japan 2 Univ. Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan |
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October
22 (Tuesday), 2024 |
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[ Session 4-1 : Short Talks for Poster ] |
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| 09:00 - 09:05 (5 min) | |||
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P-01. " |
Nonheated Atomic Layer Deposition for Germanium Gate Stack", | ||
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Taisei
Aso, Hajime Kuwazuru Dong Wang, and Keisuke Yamamoto Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka, Japan |
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| 09:05 - 09:10 (5 min) | |||
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P-02. " |
Evaluation on Selectivity by Dry Etching using CF4/H2 Plasma for Epitaxially Grown Si0.7Ge0.3 and Si", | ||
| Kotaro Ozaki 1,
Noriharu Takada 2, Yusuke Imai 2,
Takayoshi Tsutsumi 2, Kenji Ishikawa 2,
Yuji Yamamoto 3, Wei-Chen Wen 3, and
Katsunori Makihara 1 1 Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan. 2 Center for Low-temperature Plasma Scienes, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan. 3 IHP - Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany |
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| 09:10 - 09:15 (5 min) | |||
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P-03. " |
Fabrication and I-V characteristic evaluation of Pt/TiO2/Ge capacitors", | ||
| Hiroto
Shinmura 1, Tetsuya Sato 2,
and Yohei Otani 1 1 Suwa Univ. Science, 5000-1, Toyohira, Chino, Nagano 391-0292, Japan 2 Univ. Yamanashi, 4-3-11, Takeda, Kofu, Yamanashi 400-8511, Japan |
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| 09:15 - 09:20 (5 min) | |||
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P-04. " |
Room-Temperature PL Properties of Si-Quantum-Dots with Ge-Core Embedded in Microdisk", | ||
| Koki
Hosoi 1, Yuji Yamamoto 2, Wei-Chen
Wen 2, and Katsunori Makihara 1 1 Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan 2 IHP - Innovations for High Performance Microelectronics, Im Technologiepark 25, 15236 Frankfurt, Germany |
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| 09:20 - 09:25 (5 min) | |||
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P-05. " |
Ultra-Large Grain Si Thin Films on Insulator by Solid-Phase Crystallization Combined with Sn-Doping", | ||
| Shuma
Akiyoshi, Yuki Hanafusa, Takashi Kajiwara, and Taizoh
Sadoh Department of Electronics, Kyushu Univ., 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan |
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| 09:25 - 09:30 (5 min) | |||
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P-06. " |
Formation of methylated germanane multilayers from CaGe2 epitaxial layers on Ge(111)", | ||
| Atsuki Nakayama
1, Kazuho Matsumoto 1, Shigehisa
Shibayama 1, Mitsuo Sakashita 1, Osamu
Nakatsuka 1,2, and Masashi Kurosawa 1 1 Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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| 09:30 - 09:35 (5 min) | |||
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P-07. " |
Study of gate dielectric formation process and evaluation of electrical characteristics for high performance 4H-SiC-MOSFETs", | ||
| Tatsunori Oki
1, Masao Sakuraba 1,2, and Shigeo Sato 1,2 1 Graduate School of Engineering, Tohoku Univ., 6-6 Aramaki-aza Aoba, Aoba-Ku, Sendai 980-8579, Japan 2 Laboratory for Nanoelectronics and Spintronics, Res. Inst. Electr. Comm., Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
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| 09:35 - 09:40 (5 min) | |||
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P-08. " |
Segregation induced GeSn nanosheet formation through Al and Ge1−xSnx epitaxial layers", | ||
| Taiga
Matsumoto 1, Akio Ohta 2, Ryo
Yokogawa 3,4, Mitsuo Sakashita 1,
Masashi Kurosawa 1, Osamu Nakatsuka 1,
and Shigehisa Shibayama 1 1 Grad. Sch. of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603 Japan 2 Faculty of Science, Fukuoka Univ., 8-19-1 Nanakuma, Jonan-ku, Fukuoka, 814-0180 Japan 3 Department of Electronics and Bioinformatics, Sch. of Science and Technology, Meiji Univ., 1-1-1 Higashi-mita, Tama-ku, Kawasaki-shi, Kanagawa, 214-8571 Japan 4 MREL, Meiji Univ., 1-1-1 Higashi-mita, Tama-ku, Kawasaki-shi, Kanagawa, 214-8571 Japan |
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| 09:40 - 09:45 (5 min) | |||
| P-09. " | Defect Passivation in Sn-Doped Poly-Ge Thin-Films on Insulator by Post-Annealing", | ||
| Takuto Watanabe 1, Ryu
Hashimoto 1, Takashi Kajiwara 1, Kenta
Moto 2, Keisuke Yamamoto 2, and Taizoh
Sadoh 1 1 Department of Electronics, Kyushu Univ., 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan 2 IGSES, Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan |
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| [ Session 4-2 : Poster Presentation ] | |||
| 10:00 - 11:20 Poster Presentation (P-01 ~ P-09, 80 min, Room A401) | |||
| 11:20 - 12:20 Lunch | |||
| [ Session 5: Invited & Regular Talks ] | |||
| 12:20 - 12:50 (30 min) | |||
| I-12 " | Nanosecond electron emission from silicon field emitter array", | ||
| (Invited) Hidetaka Shimawaki 1, Katsuhisa Murakami 2, and Masayoshi Nagao 2 1 Hachinohe Inst. Tech., 88-1 Ohbiraki, Myo, Hachinohe 031-8501, Japan 2 National Inst. Advanced Industrial Sci. and Technol., Tsukuba 305-8568, Japan |
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| 12:50 - 13:20 (30 min) | |||
| I-13 " | New interests of Ge1−x−ySixSny/Ge1−xSnx heterostructures for electronic device applications", | ||
| (Invited) Shigehisa Shibayama 1, Shuto Ishimoto 1, Yoshiki Kato 1, Mitsuo Sakashita 1, Masashi Kurosawa 1, and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan |
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| 13:20 - 13:40 (20 min) | |||
| O-05. " | Study on Silicidation Reaction of Ultrathin Ni Films by SiH4 Exposure", | ||
| Shun Tanida
1, Noriyuki Taoka 2, and Katsunori
Makihara 1 1 Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603 Japan 2 Aichi Inst. Tech., 1247, Yachigusa, Yakusa-cho, Toyota, 470-0392, Japan |
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| 13:40 - 14:00 (20 min) | |||
| O-06. " | High Performance 3C-SiC n-MOSFET with Optimized Channel Structure and Forming Gas Annealing Effect", | ||
| Rima Nishizaki, Dong Wang, and
Keisuke Yamamoto Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan |
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| 14:00 - 14:30 (30 min) | |||
| I-14. " | Evaluation of Piezo Electric Properties of Epitaxial SiGe for Strain Sensor Application", | ||
| (Invited) Yuji Yamamoto 1,2, W.-C. Wen 1, N. Inomata 3, A.A. Corley-Wiciak 1,4, D. Ryzhak 1, C. Corley-Wiciack 5, Z. Zhizian 3, R. Sorge 1, B. Tillack 1,6 and T. Ono 3 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany 2 Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan 3 Grad. School of Eng., Tohoku Univ., 6-6-01, Aramaki aza-Aoba, Aoba-ku, Sendai, 980-8579, Japan 4 RWTH Aachen Univ., 52056, Aachen, Germany 5 ESRF – 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France 6 Tech. Univ. Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany |
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| 14:30 - 15:00 (30 min) | |||
| I-15. " | MoS2 thin films for piezoresistive strain sensors", | ||
| (Invited) Takahito Ono, Minjie Zhu, and Naoki Inomata G Graduate School of Engineering, Tohoku Univ., Aramaki Aza-Aoba 6-6-01, Aoba-ku, Sendai 980-8579, Japan |
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| 15:00 - 15:10 Closing Remarks & Group Photo | |||