January 23-24,
2023,
Conference Room
(4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Cooperative Research Project Program of the
Research Institute of Electrical Communication, Tohoku University
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Technical Program
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January
23 (Monday), 2023 |
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| 09:30 - 09:40 | |||
| Introductory
Junichi Murota (Tohoku Univ.) |
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[ Session 1 : Invited Talks ] |
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09:40 - 10:10 (30 min) |
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| I-01. " | SiGe- and Ge-based Devices as Key Enabler of High Performance RF Electronic and Photonic Technologies", | ||
| (Invited) Andreas Mai 1,2 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany 2 Technical University of Applied Science Wildau, Germany |
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| 10:10 - 10:40 (30 min) | |||
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I-02. " |
Ge-on-Nothing as an alternative template to thin Ge wafers", | ||
| (Invited) Valérie Depauw 1,2,3, Clément Porret 2, Jinyoun Cho 4, Kristof Dessein 4, and Roger Loo 2 1 University of Hasselt, Belgium 2 imec, Belgium 3 EnergyVille, Belgium 4 Umicore, Electro-Optic Materials, Belgium |
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| 10:40 - 11:10 (30 min) | |||
| I-03. " |
Ge-on-Insulator from Ge-on-Nothing and Layer Transfer", |
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| (Invited) Keisuke Yamamoto 1, Dong Wang 1, Roger Loo 2, Clément Porret 2, Jinyoun Cho 3, Kristof Dessein 3, and Valérie Depauw 2 1 Faculty of Engineering Sciences, Kyushu Univ., Japan 2 imec, Belgium 3 Umicore, Electro-Optic Materials, Belgium1 |
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| 11:10 - 11:40 (30 min) | |||
| I-04. " |
Thermal oxidation kinetics of germanium", |
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| (Invited) Akira Toriumi Univ. Tokyo, Japan |
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| 11:40 - 13:00 Lunch | |||
| [ Session 2 : Invited & Regular Talks ] | |||
| 13:00 - 13:30 (30 min) | |||
| I-05. " | Progress on SiGeSn light emitters and detectors on Si", | ||
| (Invited) D. Buca 1, T. Liu 1, O. Concepción 1, M. El Kurdi 2, Yuji Yamamoto 3, G. Capellini 3, G. Isella 4, and D. Grützmacher 1 1 Peter Grünberg Institute-9 and JARA-FIT, Forschungszentrum Jülich, Germany 2 Université Paris-Saclay, CNRS, C2N, France 3 Leibniz-Institut für innovative Mikroelektronik GmbH (IHP), Germany 4 LNESS Dipartimento di Fisica, Politecnico di Milano, Italy |
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| 13:30 - 14:00 (30 min) | |||
| I-06. " | Challenge and new opportunity of Ge1-x-ySixSny/Ge1-xSnx heterostructures for optoelectronic and electronic device applications", | ||
| (Invited) Shigehisa Shibayama 1, Shiyu Zhang 1, Mitsuo Sakashita 1, Masashi Kurosawa 1, and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan |
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| 14:00 - 14:20 (20 min) | |||
| O-01. " | N-type characteristics of undoped GeSn in the low Sn concentration region", | ||
| N. Shimizu 1, Y. Wang 1,
A. Honda 1, K. Yamamoto 1, S. Zhang 2,
S. Shibayama 2, O. Nakatsuka 2,3, and D.
Wang 1 1 IGSES, Kyushu Univ., Japan 2 GS of Eng., Nagoya Univ., Japan 3 IMaSS, Nagoya Univ., Japan |
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| 14:20 - 14:40 (20 min) | |||
| O-02. " | Polycrystalline Thin-Film Transistor Based on Solid-Phase Crystallized Ge and GeSn", | ||
| Kenta
Moto 1,2, Keisuke Yamamoto 1, and
Kaoru Toko 3 1 Kyushu Univ., Japan 2 JSPS Research Fellow, Japan 3 Univ. Tsukuba, Japan |
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| 14:40 - 15:00 Break (20 min) | |||
| [ Session 3 : Invited & Regular Talks ] | |||
| 15:00 - 15:30 (30 min) | |||
| I-07. " | Epitaxial Germanide/Germanium Contact: Its Impact on Schottky Barrier Height", | ||
| (Invited) Osamu Nakatsuka 1,2, Shigehisa Shibayama 1, Mitsuo Sakashita 1, and Masashi Kurosawa 1 1 Graduate School of Engineering, Nagoya Univ., Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan |
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| 15:30 - 16:00 (30 min) | |||
| I-08. " | Microfabrication of thermoelectric devices and
applications to autonomous IoT sensing", |
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| (Invited) Takahito Ono 1,2 1 Graduate School of Engineering, Tohoku Univ., Japan 2 Micro System Integration Center (μSIC), Tohoku Univ., Japan |
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| 16:00 - 16:20 (20 min) | |||
| O-03. " | Formation of Fe3Si Nanodots and Characterization of Their Magnetoelectronic Transport Properties", | ||
| Jialin Wu 1, Hai Zhang 2,
Katsunori Makihara 1, Noriyuki Taoka 1,
and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya Univ., Japan 2 Inner Mongolia Univ. of Technology, China |
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January
24 (Tuesday), 2023 |
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[ Session 4-1 : Short Talks for Poster ] |
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| 09:00 - 09:05 (5 min) | |||
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P-01. " |
Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization", | ||
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Linyu
Huang 1, Kenta Moto 1,2, Takamitsu
Ishiyama 3, Kaoru Toko 3, Dong Wang 1,
and Keisuke Yamamoto 1 1 Kyushu Univ., Japan 2 JSPS Research Fellow, Japan 3 Univ. of Tsukuba, Japan |
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| 09:05 - 09:10 (5 min) | |||
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P-02. " |
Heteroepitaxy of Ge1-xSnx with a high Sn content over 25% on InP(001) toward group-IV infrared detector", | ||
| Komei Takagi
1, Shigehisa Shibayama 1, Mitsuo
Sakashita 1, Masashi Kurosawa 1, and
Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan |
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| 09:10 - 09:15 (5 min) | |||
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P-03. " |
Change of Surface Morphology, Chemical Bonding Features and Crystalline Phases of Ultra-thin NixSi1-x Layers Due to Thinning", | ||
| K. Kimura, N. Taoka, S. Nishimura, A.
Ohta, K. Makihara, and S. Miyazaki Graduate School of Engineering, Nagoya Univ., Japan |
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| 09:15 - 09:20 (5 min) | |||
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P-04. " |
Study on the Performance of Metal S/D Ge n-MOSFET with Recessed Channel Structure", | ||
| Hajime Kuwazuru 1, Shingo Nasu
1, Dong Wang 2, and Keisuke Yamamoto 2 1 Interdisciplinary Graduate School of Engineering Science, Kyushu Univ., Japan 2 Faculty of Engineering Sciences, Kyushu Univ., Japan |
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| 09:20 - 09:25 (5 min) | |||
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P-05. " |
Crystalline and electrical properties of Ge1-x-ySixSny epitaxial layers - Effect of Si incorporation and H2 irradiation -", | ||
| Kohei Nishizawa 1, Shigehisa
Shibayama
1, Taichi Mori 1,
Mitsuo Sakashita 1, Masashi Kurosawa 1,
and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan |
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| 09:25 - 09:30 (5 min) | |||
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P-06. " |
Formation of Fe-silicide-NDs and Characterization of Their PL Properties", | ||
| Haruto Saito
1, Katsunori Makihara 1, Yoshiaki Hara 2,
Shuntaro Fujimori 1, Yuki Imai 1, Noriyuki Taoka 1, Akio Ohta 1, and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya Univ., Japan 2 National Institute of Technology, Ibaraki College, Japan |
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| 09:30 - 09:35 (5 min) | |||
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P-07. " |
Fabrication Process of Double-Implanted
Metal-Oxide-Semiconductor Field Effect Transistor of 4H-SiC Utilizing Wet Oxidation", |
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| Yusuke Sato 1,2,
Satoshi Watanabe 2, Masao Sakuraba 1,2,
and Shigeo Sato 1,2 1 Graduate School of Engineering, Tohoku Univ., Japan 2 Laboratory for Nanoelectronics and Spintronics, Res. Inst. Electr. Comm., Tohoku Univ., Japan |
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| 09:35 - 09:40 (5 min) | |||
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P-08. " |
Development of accurate characterization technique of electrical properties in Ge1-xSnx-based group-IV epitaxial layers", | ||
| Taichi Mori 1, Shigehisa
Shibayama 1, Kohei Nishizawa 1, Mitsuo
Sakashita 1, Masashi Kurosawa 1, and
Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan |
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| 09:40 - 09:45 (5 min) | |||
| P-09. " | Ultrathin Si Segregated Layer Formation on Al/Si(111)", | ||
| Taiki Sakai, Akio Ohta, Keigo Matsushita,
Noriyuki Taoka, Katsunori Makihara, and Seiichi Miyazaki Graduate School of Engineering, Nagoya Univ., Japan |
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| 09:45 - 09:50 (5 min) | |||
| P-10. " | Arising ferroelectric properties in ZrO2 thin film down to 4 nm", | ||
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Shota
Ikeguchi 1, Jotaro Nagano 1,
Mitsuo Sakashita 1, Masashi Kurosawa 1,
Osamu Nakatsuka 1,2, and Shigehisa
Shibayama
1 1 Graduate School of Engineering, Nagoya Univ., Japan 2 Institute of Materials and Systems for Sustainability, Nagoya Univ., Japan |
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| [ Session 4-2 : Poster Presentation ] | |||
| 10:00 - 11:20 Poster Presentation (P-01 ~ P-10, 80 min) | |||
| 11:20 - 12:30 Lunch | |||
| [ Session 5: Invited & Regular Talks ] | |||
| 12:30 - 13:00 (30 min) | |||
| I-09 " | 3-D Imaging of Temperature Variations in 4H-SiC Schottky Barrier Diode under Operation based on Optical Interference Contactless Thermometry", | ||
| (Invited) S. Higashi, K. Fujimoto, and H. Hanafusa Graduate School of Advanced Science and Engineering, Hiroshima Univ., Japan |
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| 13:00 - 13:30 (30 min) | |||
| I-10 " | Group-IV Heteroepitaxy for Novel and Emerging Device Applications", | ||
| (Invited) Yuji Yamamoto 1, Wei-Chen Wen 1, and Bernd Tillack 1,2 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany 2 Technische Universität Berlin, Germany |
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| 13:30 - 13:50 (20 min) | |||
| O-04. " | Electronic Charged States of High Density Self-aligned Si-based Quantum Dots as Evaluated by Using an AFM/Kelvin Probe Technique", | ||
| Yuki Imai, Katsunori Makihara, Noriyuki
Taoka, Akio Ohta, and Seiichi Miyazaki Graduate School of Engineering, Nagoya Univ., Japan |
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| 13:50 - 14:20 (30 min) | |||
| I-11. " | Toward Steep Slope Cryogenic Transistors for Quantum Computing", | ||
| (Invited) Yi Han, Jingxuan Sun, Detlev Grützmacher, and Qing-Tai Zhao Peter-Grünberg-Institute (PGI 9), Forschungszentrum Jülich, Germany |
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| 14:20 - 14:50 (30 min) | |||
| I-12. " | Superiority of extremely-thin body GOI channels in nano-sheet MOSFETs", | ||
| (Invited) Shinichi Takagi, Chia-Tsong Chen, Xueyang Han, Kei Sumita, Kasidit Toprasertpong, and Mitsuru Takenaka Univ. Tokyo, Japan |
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| 14:50 - 15:00 Closing Remarks & Group Photo | |||