December
14-15, 2023,
Conference Room
& Room A401 (4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Cooperative Research Project
Program of the Research Institute of Electrical Communication, Tohoku
University
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Technical
Program
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December
14 (Thursday), 2023 |
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| 09:20 - 09:30 | |||
| Introductory
Masao Sakuraba (RIEC, Tohoku Univ.) |
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[ Session 1 : Invited & Regular Talks] |
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09:30 - 10:00 (30 min) |
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| I-01. " | Epitaxial SiGe/Si Multi-Stacks for Complementary FET Devices", | ||
| (Invited) Roger Loo 1,2, Anjani Akula 1, Clement Porret 1, Dong Wang 3, Keisuke Yamamoto 3, Tamás Sipőcz 4, Árpád Kerekes 4, Alex Merkulov 1, Mustafa Ayyad 1, Han Han 1, Olivier Richard 1, Andrea Impagnatiello 1, Andriy Hikavyy 1,5, and Yosuke Shimura 1 1 Imec, Kapeldreef 75, 3001 Leuven, Belgium 2 Ghent University, Department of Solid-State Sciences, Krijgslaan 281, building S1, 9000 Ghent, Belgium 3 Kyushu University, Faculty of Engineering Sciences, 6-1 Kasuga-koen, Kasuga, Fukuoka, Japan 4 Semilab Semiconductor Physics Laboratory Co. Ltd., Prielle Kornélia u. 2. H 1117 Budapest, Hungary 5 Currently at Soitec, 922 Parc technologique des Fontaines, Chem. des Franques, 38190 Bernin, France |
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| 10:00 - 10:20 (20 min) | |||
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O-01. " |
Formation and Local Electron Charging Properties of One-Dimensionally Self-Aligned Si-QDs", | ||
| Yuki
Imai 1, Katsunori Makihara 1,2,
Yuji Yamamoto 2, Wei-Chen Wen 2, Markus
Andreas Schubert 2, Jongeun Baek 1,
Ryoya Tsuji 2, Noriyuki Taoka 3, Akio
Ohta 4, and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan 2 IHP-Leibniz-Institut für Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 3 Graduate School of Engineering, Aichi Institute of Technology, 1247 Yachigusa, Yakusa-cho, Toyoya, Aichi 470-0392, Japan 4 Faculty of Science, Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka 814-0180, Japan |
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| 10:20 - 10:50 (30 min) | |||
| I-02. " |
Epitaxy studies of C-Si-Ge-Sn Layer for photonics applications", |
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| (Invited) Omar Concepción 1, M. H. Zoellner 2, G. Capellini 2,3, Q. T. Zhao 1, D. Grützmacher 1, and D. Buca 1 1 Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich, Germany 2 IHP - Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany 3 Dipartimento di Scienze, Università Roma Tre, 00146 Roma, Italy |
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| 10:50 - 11:10 (20 min) | |||
| O-02. " |
Polarized-resolved Raman scattering of epitaxially grown (Si)GeSn layers", |
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| Agnieszka
Anna Corley-Wiciak 1, Shunda Chen 2,
Omar Concepción 3, Marvin Hartwig Zoellner 1,
Detlev Grützmacher 3, Dan Buca 3,
Tianshu Li 2, Giovanni Capellini 1,4,
and Davide Spirito 1 1 IHP-Leibniz Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany 2 Department of Civil and Environmental Engineering, George Washington University, Washington, DC 20052, USA 3 Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich, 52428 Jülich, Germany 4 Dipartimento di Scienze, Università Roma Tre, V.le G. Marconi 446, 00146 Roma, Italy |
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| 11:10 - 11:30 (20 min) | |||
| O-03. " |
Observation of acceptor-type defect levels using low-temperature Hall effect measurement for GeSn layers fabricated by molecular beam epitaxy", |
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| Akira
Honda 1, N. Shimizu 1, Y. J. Feng
1, K. Yamamoto 1, S. Shibayama 2,
O. Nakatsuka 2,3, and D. Wang 1 1 IGSES, Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka, Japan 2 G. S. of Eng., Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Japan 3 IMaSS, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Japan |
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| 11:30 - 12:40 Lunch | |||
| [ Session 2 : Invited & Regular Talks ] | |||
| 12:40 - 13:10 (30 min) | |||
| I-03. " | Crucial roles of oxygen involved in Ge substrate in electrical properties of Ge FETs", | ||
| (Invited) Akira Toriumi Free Engineer, Yokohama, Japan |
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| 13:10 - 13:30 (20 min) | |||
| O-04. " | Inversion Mode n-channel TFT Fabricated on Solid-Phase Crystallized Polycrystalline Ge at Low Temperature Improved by Metal Induced Dopant Activation", | ||
| Linyu Huang 1, Kenta
Moto 1, Kota Igura 2, Takamitsu Ishiyama
2, Kaoru Toko 2, Dong Wang 1,
and Keisuke Yamamoto 1 1 Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka, 816-8580, Japan 2 Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan |
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| 13:30 - 13:50 (20 min) | |||
| O-05. " | Selective Epitaxy of Germanium by Reduced Pressure Chemical Vapor Deposition: Effect of Area Growth Size on Morphology, Strain, and Optical Emission", | ||
| Diana Ryzhak 1,
Agnieszka Anna Corley-Wiciak 1, Patrick Steglich 1,
Yuji Yamamoto 1, Jacopo Frigerio 2,
Andrea De Iacovo 3, Davide Spirito 1,
and Giovanni Capellini 1,4 1 IHP – Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 2 L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como, Italy 3 Dipartimento di Ingegneria Industriale, Elettronica e Meccanica - Università Roma Tre, Via Vito Volterra 62, 00146, Roma, Italy 4 Dipartimento di Scienze, Università Roma Tre, V.le G. Marconi 446, 00146 Roma, Italy |
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| 13:50 - 14:20 (30 min) | |||
| I-04. " | Electrical and Structural Characterization of Thermally Oxidized Yttrium Oxide on Germanium", | ||
| (Invited) Keisuke Yamamoto 1, Wei-Chen Wen 2, Dong Wang 1, and Hiroshi Nakashima 3 1 Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka, Japan 2 Currently working at IHP, Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 3 Currently working at National Institute of Technology (KOSEN), Sasebo College, Okishinmachi 1-1, Sasebo, Nagasaki 857–1193, Japan |
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| 14:20 - 14:40 (20 min) | |||
| O-06. " | Fabrication of a Ge gate stack using plasma irradiation and low-temperature annealing for Ge applications", | ||
| Hajime Kuwazuru 1, Dong
Wang 2, and Keisuke Yamamoto 2 1 Interdisciplinary Graduate School of Engineering Science, Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka, Japan 2 Faculty of Engineering Sciences, Kyushu Univ., 6-1 Kasuga-koen, Kasuga, Fukuoka, Japan |
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| 14:40 - 15:00 Break (20 min) | |||
| [ Session 3 : Invited & Regular Talks ] | |||
| 15:00 - 15:30 (30 min) | |||
| I-05. " | A new challenge in group-IV materials: energy harvesting application & 2D crystal synthesizing", | ||
| (Invited) Masashi Kurosawa 1, Akio Ohta 2, Masaaki Araidai 1,3, Shigehisa Shibayama 1, Mitsuo Sakashita 1, and Osamu Nakatsuka 1,2 1 Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan 2 Faculty of Science, Fukuoka Univ., 8-19-1 Nanakuma, Jonan-ku , Fukuoka 814-0180, Japan 3 Institute of Materials and Systems for Sustainability, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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| 15:30 - 16:00 (30 min) | |||
| I-06. " | Lateral Selective Epitaxial SiGe Growth for Locally Dislocation-Free Virtual Substrate Fabrication", | ||
| (Invited) Yuji Yamamoto 1, Wei-Chen Wen 1, Markus Andreas Schubert 1, Agnieszka Anna Corley-Wiciak 1,2, Sho Sugawa 3, Yuta Ito 3, Ryo Yokogawa 3, Han Han 3, Roger Loo 4,5, Atsushi Ogura 3, and Bernd Tillack 1,6 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 2 RWTH Aachen University, 52056, Aachen, Germany 3 School of Sci. and Technol., Meiji Univ., 1-1-1 Higashimita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan 4 imec, vzw, Kapeldreef 75, 3001 Leuven, Belgium 5 Ghent University, Department of Solid-State Sciences, Krijgslaan 281, building S1, 9000 Ghent, Belgium 6 Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany |
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| 16:00 - 16:20 (20 min) | |||
| O-07. " | Revealing the Full Strain Tensor in Functional Group IV Devices by Nanobeam Scanning X-ray Diffraction Microscopy", | ||
| Cedric Corley-Wiciak 1,
M. H. Zoellner 2, E. Zatterin 1, A. A.
Corley-Wiciak 2,3, W.-C. Wen 2, C.-H. Lu
4, K. Anand 2, I. Zaitsev 2,
C. L. Manganelli 2, F. Rovaris 5, A.
Marzegalli 5, F. Montalenti 5, M.
Virgilio 6, Y. Yamamoto 2, T. U. Schulli
1, G. Capellini 2,7, and C. Richter 4 1 ESRF – European Synchrotron Radiation Facility, 71, avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France 2 IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 3 RWTH Aachen, Aachen, Germany 4 IKZ – Leibniz -Institut für Kristallzüchtung, Max-Born-Straße 2, D-12489 Berlin, Germany 5 L-NESS and Department of Materials Science, University of Milano-Bicocca, Via Roberto Cozzi 55, I-20125 Milano, Italy 6 Department of Physics Enrico Fermi, Università di Pisa, Pisa 56126, Italy 7 Dipartimento di Scienze, Universita Roma Tre, Roma 00146, Italy |
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December
15 (Friday), 2023 |
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[ Session 4-1 : Short Talks for Poster ] |
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| 09:20 - 09:25 (5 min) | |||
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P-01. " |
Impacts of Initial Si/Ni/Si Structure Formed on SiO2 on Surface Morphology and Composition Ratio of Ultra-thin Ni-Silicide Layer", | ||
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Keisuke
Kimura 1, Noriyuki Taoka 2, Akio
Ohta 3, Katsunori Makihara 1, and
Seiichi Miyazaki 1 1 Nagoya University , Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan 2 Aichi Institute of Technology, Yachigusa 1247, Yakusa-cho, Toyota, Aichi 470-0392, Japan 3 Fukuoka University, 8-19-1 Nanakuma, Jonan-ku , Fukuoka 814-0180, Japan |
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| 09:25 - 09:30 (5 min) | |||
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P-02. " |
Effects of Capping Layers on Solid-Phase Crystallization of Sn-Doped Ge Thin Films on Insulators", | ||
| Ryu Hashimoto 1,
Taishiro Koga 1, Takaya Nagano 1, Kenta
Moto 2, Keisuke Yamamoto 2, and Taizoh
Sadoh 1 1 Department of Electronics, Kyushu University, 744 Motooka, Nisi-ku, Fukuoka 819-0395, Japan 2 IGSES, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan |
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| 09:30 - 09:35 (5 min) | |||
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P-03. " |
Study on Photoluminescence from β-FeSi2 NDs", | ||
| Haruto
Saito 1, Katsunori Makihara 1,
Noriyuki Taoka 2, and Seiichi Miyazaki 1 1 Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya Aichi 464-8601, Japan 2 Aichi Institute of Tech. Tech., Yachigusa 1247, Yakusa-cho, Toyota, Aichi, 470-0392 Japan |
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| 09:35 - 09:40 (5 min) | |||
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P-04. " |
Electrical activation of implanted phosphorus in GeSn epitaxial layers grown on Si(111) substrate", | ||
| Yoshiki
Kato 1, Masahiro Fukuda 1,
Shigehisa Shibayama 1, Mitsuo Sakashita 1,
Masashi Kurosawa 1, and Osamu Nakatsuka 1,2 11 Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan |
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| 09:40 - 09:45 (5 min) | |||
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P-05. " |
Effect of Ni Electrode Formation and Annealing on Crystalline Phases and Chemical Bonding Features of HfZr-oxide layer", | ||
| Yunosuke
Sano 1, Noriyuki Taoka 2, Akio
Ohta 3, Katsunori Makihara 1, and
Seiichi Miyazaki 1 1 Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan 2 Aichi Institute of Technology, 1247 Yachigusa, Yakusa-cho, Toyota, Aichi 470-0356, Japan 3 Fukuoka University, 8-19-1 Nanakuma, Jonan-ku, Fukuoka, 814-0180, Japan |
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| 09:45 - 09:50 (5 min) | |||
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P-06. " |
Fabrication of Al2O3 film on Ge substrate at 190K and its electrical properties", | ||
| Ayato Nishizaki
1, Kaito Nakao 1, Takeshi Miyairi 1,
Tatsuya Yokohira 1, Daichi Yamada 1,
Atsuki Okawa 2, Tetsuya Sato 2, and
Yohei Otani 1 1 Suwa University of Science, 5000-1, Toyohira, Chino, Nagano 391-0292, Japan 2 University of Yamanashi, 4-3-11, Takeda, Kofu, Yamanashi 400-8511, Japan |
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| 09:50 - 09:55 (5 min) | |||
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P-07. " |
Formation of One-Dimensionally Aligned Si-QDs on SiO2 Line Patterns", | ||
| Ryoya Tsuji,
Yuki Imai, Jongeun Baek, Katsunori Makihara, and Seiichi
Miyazaki Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan |
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| 09:55 - 10:00 (5 min) | |||
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P-08. " |
Thermoelectric properties of Sb-doped Ge1-x-ySixSny ternary alloy layers lattice matched to GaAs substrates", | ||
| Itsuki
Sugimura 1, Masaya Nakata 1,
Shigehisa Shibayama 1, Mitsuo Sakashita 1,
Osamu Nakatsuka 1,2, Takayoshi Katase 3,
and Masashi Kurosawa 1 1 Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan 3 MDX Research Center for Element Strategy, International Research Frontiers Initiative, Tokyo Institute of Technology, Yokohama, Kanagawa 226-8503, Japan |
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| 10:00 - 10:05 (5 min) | |||
| P-09. " | SNDM study of MOS interface state densities on 3C-SiC and 4H-SiC stacked structure", | ||
| Hiroyuki Nagasawa 1, Y.
Cho 2, M. Abe 3, T. Tanno 3,
M. Musya 3, M. Sakuraba 3,4, Y. Sato 3,4,
and S. Sato 3,4 1 CUSIC Inc., 2-2-10 Chuo, Aoba-ku, Sendai, Miyagi 980-0021, Japan 2 NICHe, Tohoku Univ., 6-6-10 Aramaki Aza Aoba, Aoba-ku, Sendai, 980-8579, Japan 3 RIEC, Tohoku Univ., 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan 4 Grad. Sch. Eng., Tohoku Univ., 6-6 Aramaki Aza Aoba, Aoba-ku, Sendai 980-8579, Japan |
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| [ Session 4-2 : Poster Presentation ] | |||
| 10:20 - 11:40 Poster Presentation (P-01 ~ P-10, 80 min, Room A401) | |||
| 11:40 - 12:40 Lunch | |||
| [ Session 5: Invited & Regular Talks ] | |||
| 12:40 - 13:10 (30 min) | |||
| I-07 " | Optically induced electron emission from graphene-oxide-semiconductor electron source", | ||
| (Invited) Hidetaka Shimawaki 1, M. Nagao 2, and K. Murakami 2 1 Hachinohe Institute of Technology, 88-1 Ohbiraki, Myo, Hachinohe 031-8501, Japan 2 National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba 305-8568, Japan |
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| 13:10 - 13:40 (30 min) | |||
| I-08 " | Strain Effect on Three-Dimensional Self-Aligned Ge Nanodot on SiGe Virtual Substrate", | ||
| (Invited) Wei-Chen Wen 1, Bernd Tillack 1,2, and Yuji Yamamoto 1 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany 2 Technische Universität Berlin, HFT4, Einsteinufer 25, 10587 Berlin, Germany |
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| 13:40 - 14:00 (20 min) | |||
| O-08. " | Self-Assembling Mechanism of Si-QDs on Thermally-Grown SiO2", | ||
| Jongeun Baek, Yuki Imai, Ryoya
Tsuji, Katsunori Makihara, and Seiichi Miyazaki Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi, 464-8603, Japan |
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| 14:00 - 14:30 (30 min) | |||
| I-09. " | Magneto-Mechanical Thin-Film Actuators", | ||
| (Invited) Takahito Ono 1,2 1 Graduate School of Engineering, Tohoku University, Aramaki Aza-Aoba 6-6-01, Aoba-ku, Sendai 980-8579, Japan 2 Micro System Integration Center (μSIC), Tohoku University, Aramaki Aza-Aoba 519-1176, Aoba-ku, Sendai 980-8579, Japan |
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| 14:30 - 14:40 Closing Remarks & Group Photo | |||