February 13-14, 2017,
Conference Room (4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Japan Society for the
Promotion of Science (JSPS): Core-to-Core Program "Atomically
Controlled Processing for Ultralarge Scale Integration"
- Japan Society for the
Promotion of Science (JSPS): 154th Committee on Semiconductor
Interfaces and Their Applications in University-Industry Cooperative
Research Committees
- Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University
| >>> Program & Abstracts (PDF, 13 MB) <<< |
| >>> Program (PDF, 140 KB) <<< |
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Technical
Program
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February 13 (Monday), 2017 |
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| 09:20 - 09:30 | ||
| Introductory Junichi Murota (Tohoku Univ.) |
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[ Session 1-1 : Invited & Regular Talks ] |
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09:30 - 10:00 (30 min) |
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| I-01. " | Progress on Laser processing of Group-IV semiconductors at the New Materials Group of the University of Vigo", | |
| (Invited) S. Chiussi 1, S. Stefanov 1, E. Martin 2, C. Serra 3, A. Benedetti 3, Ralph Delmdahl 4, P. Gonzalez 1 1 Dpto. Fisica Aplicada, E. I. Industrial, Univ. de Vigo (Spain) 2 Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, Univ. de Vigo (Spain) 3 CACTI, Univ. de Vigo (Spain) 4 Coherent Laser Systems GmbH & Co. KG (Germany) |
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| 10:00 - 10:30 (30 min) | ||
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I-02. " |
Effect of Oxynitridation Annealing for SiO2/SiC Interface on Defects Properties", | |
| (Invited) Wakana Takeuchi 1, Kensaku Yamamoto 2, Mitsuo Sakashita 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 DENSO CORPORATION (Japan) 3 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
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| 10:30 - 10:50 (20 min) | ||
| O-01. " |
Effect of n-type doping level on direct band gap light emission intensity for asymmetric metal/Ge/metal diodes", |
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| Takayuki Maekura 1, Chisato Motoyama 1, Kentaro Tanaka 1, Keisuke Yamamoto 1, Hiroshi Nakashima 2 and Dong Wang 1 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) 2 Global Innovation Center, Kyushu University (Japan) |
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10:50 - 11:10 (20 min) |
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| O-02. " | In situ phosphorus doping of Ge and Ge1-xSnx epitaxial layers by low-temperature metal-organic chemical vapor deposition", | |
| Shinichi Ike 1,2, Wakana Takeuchi 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 Research Fellow of the Japan Society for the Promotion of Science (Japan) 3 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
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11:10 - 11:30 (20 min) |
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| O-03. " | Influence of ALD High-k film deposition on plasma oxidation GeOx/Ge gate stacks", | |
| M. Ke, M. Takenaka and S. Takagi Department of Electrical Engineering, Graduate School of Engineering, The University of Tokyo (Japan) |
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| 11:30 - 12:50 Lunch | ||
| [ Session 1-2 : Short Talks for Poster ] | ||
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12:50 - 12:55 (5 min) |
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| P-01. " | Suppression effect of secondary phase formation on solid-phase crystallization in V-doped ZnO thin films", | |
| Akihiro Watanabe, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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12:55 - 13:00 (5 min) |
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| P-02. " | IR spectroscopic study during air-exposure of silicon nitride films grown at a low substrate temperature using VHF-PECVD", | |
| Shin-ichi Kobayashi Department of Electronics and Mechatoronics, Tokyo Polytechnic University (Japan) |
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13:00 - 13:05 (5 min) |
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| P-03. " | High-quality ZnO thin films grown by V and N co-doping at room temperature", | |
| Tomoya Suzuki, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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13:05 - 13:10 (5 min) |
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| P-04. " | Solid phase crystallization of Ge0.98Sn0.02 layers on various insulating substrates", | |
| Isao Yoshikawa 1, Masashi Kurosawa 1,2, Wakana Takeuchi 1, Mitsuo Sakashita 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Graduate School of Eng., Nagoya University (Japan) 2 PRESTO, Japan Science and Technology Agency (Japan) 3 Inst. of Mater. and Sys. for Sustainability, Nagoya University (Japan) |
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13:10 - 13:15 (5 min) |
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| P-05. " | Rhombohedrally aligned growth of Ge(111) film on c-plane sapphire substrate", | |
| Yamato Kawaguchi 1, Yuhki Itoh 1,2,3, Tomoyuki Kawashima 1 and Katsuyoshi Washio 1 1 Graduate School of Engineering, Tohoku University (Japan) 2 Division for International Advanced Research and Education, Tohoku University (Japan) 3 Japan Society for the Promotion of Science Research Fellow for young Scientists (Japan) |
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13:15 - 13:20 (5 min) |
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| P-06. " | Influence of atomic layer deposition temperature of GeO2 layer on electrical properties of Ge and Ge1-xSnx gate stack", | |
| Yuichi Kaneda 1, Masayuki Kanematsu 1, Mitsuo Sakashita 1, Wakana Takeuchi 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,2 1 Graduate School of Eng., Nagoya University (Japan) 2 Inst. of Mater. and Sys. for Sustainability, Nagoya University (Japan) |
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13:20 - 13:25 (5 min) |
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| P-07. " | Influence of carbon binding states at Ge/Si(100) interface on Ge quantum dot formation via carbon mediation", | |
| Kosuke Yasuta 1, Yuhki Itoh 1,2,3, Tomoyuki Kawashima 1 and Katsuyoshi Washio 1 1 Graduate School of Engineering, Tohoku University (Japan) 2 Division for International Advanced Research and Education, Tohoku University (Japan) 3 Japan Society for the Promotion of Science Research Fellow for young Scientists (Japan) |
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| [ Session 1-3 : Poster Presentation ] | ||
| 13:25
- 14:15 Poster Presentation (P-01 ~ P-07, 50 min) |
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| [ Session 1-4 : Invited & Regular Talks ] | ||
| 14:20 - 14:50 (30 min) | ||
| I-03. " | Strain relaxation in GeSn alloys", | |
| (Invited) N. von den Driesch 1, D. Rainko 1, S. Wirths 1, A.T. Tiedemann 1, U. Breuer 2, G. Mussler 1, J.M. Hartmann 3, S. Mantl 1, D. Grützmacher 1 and D. Buca 1 1 Peter Gruenberg Institute (PGI 9-IT) and JARA – Fundamentals of Future Information Technologies, Forschungszentrum Jülich (Germany) 2 Central Institute for Engineering, Electronics and Analytics (ZEA), Forschungszentrum Jülich (Germany) 3 Univ. Grenoble Alpes and CEA, LETI, MINATEC Campus (France) |
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| 14:50 - 15:20 (30 min) | ||
| I-04. " | Optical properties of gated silicon field emitter array", | |
| (Invited) H. Shimawaki 1, M. Nagao 2, Y. Neo 3 and H. Mimura 3 1 Department of System and Information Engineering, Hachinohe Institute of Technology (Japan) 2 Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (Japan) 3 Research Institute of Electronics, Shizuoka University (Japan) |
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| 15:20 - 15:40 (20 min) | ||
| O-04. " | Carbon-mediated Ge quantum dot formation via c(4x4) surface reconstruction and solid-phase epitaxy", | |
| Yuhki Itoh 1, 2, 3, Tomoyuki Kawashima 1 and Katsuyoshi Washio 1 1 Graduate School of Engineering, Tohoku University (Japan) 2 Division for International Advanced Research and Education, Tohoku University (Japan) 3 Japan Society for the Promotion of Science Research Fellow for Young Scientists (Japan) |
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| 15:40 - 16:00 Break (20 min) | ||
| [ Session 1-5 : Invited & Regular Talks ] | ||
| 16:00 - 16:30 (30 min) | ||
| I-05. " | Achievement of Ultralow Contact Resistivity of Metal/Ge Contacts with Zr-N-Ge Amorphous Interlayer", | |
| (Invited) Keisuke Yamamoto, Hayato Okamoto, Dong Wang and Hiroshi Nakashima 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) 2 Global Innovation Center, Kyushu University (Japan) |
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| 16:30 - 16:50 (20 min) | ||
| O-05. " | Deposition and solid-phase crystallization of amorphous CuCrO2:N thin films on c-face sapphire substrate", | |
| Hiroshi Chiba 1,2, Naotoshi Hosaka 1, Tomoyuki Kawashima 1 and Katsuyoshi Washio 1 1 Graduate School of Engineering, Tohoku University (Japan) 2 Research Fellow of Japan Society for the Promotion of Science (Japan) |
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| 16:50 - 17:10 (20 min) | ||
| O-06. " | Fabrication and characterization of P3HT polymer-based organic thin film transistors with electrodes of highly doped P3HT", | |
| Daisuke Tadaki 1, Teng Ma 1, Jinyu Zhang 1, Shohei Iino 1, Ayumi Hirano-Iwata 1,2, Yasuo Kimura 3, Richard A. Rosenberg 4 and Michio Niwano 1 1 Research Institute of Electrical Communication, Tohoku University (Japan) 2 Advanced Institute for Materials Research, Tohoku University (Japan) 3 Tokyo University of Technology (Japan) 4 Advanced Photon Source, Argonne National Laboratory (USA) |
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| 18:00
- 20:00 Banquet (Hotel Bel Air Sendai, 1st Floor Restaurant) |
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February 14 (Tuesday), 2017 |
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[ Session 2-1 : Short Talks for Poster ] |
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| 09:00 - 09:05 (5 min) | ||
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P-08. " |
Evaluation of Dielectric Function of Oxide Thin Films from Photoemission Measurements", | |
| Taishi Yamamoto, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 09:05 - 09:10 (5 min) | ||
| P-09. " | Low-Temperature (~250°C) Growth of Large-Grain Sn-Doped Ge (100) on Insulator by Al-Induced Crystallization for Flexible Electronics", | |
| M. Sasaki, M. Miyao and T. Sadoh Department of Electronics, Kyushu University (Japan) |
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| 09:10 - 09:15 (5 min) | ||
| P-10. " | Luminescence Studies of High Density Si Quantum Dots with Ge core", | |
| Kentaro Yamada, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 09:15 - 09:20 (5 min) | ||
| P-11. " | Chemical Analysis of Epitaxial Ag(111) Surface formed on Group-IV Semiconductors", | |
| K. Ito 1, A. Ohta 1,2, M. Kurosawa 1,2, M. Araidai 1,2,3, M. Ikeda 1, K. Makihara 1 and S. Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Institute for Advanced Research, Nagoya University (Japan) 3 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
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| 09:20 - 09:25 (5 min) | ||
| P-12. " | Microwire-embedded flexible pressure sensor with poly(vinylidene fluoride) thin film ", | |
| Ryohei Abe 1, Daisuke Tadaki 1, Teng Ma 1, Yuji Imai 2, Ayumi Hirano-Iwata 1,3 and Michio Niwano 1 1 RIEC, Tohoku Univ. (Japan) 2 Sendai National College of Technology (Japan) 3 AIMR, Tohoku Univ. (Japan) |
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| 09:25 - 09:30 (5 min) | ||
| P-13. " | Characterization of Field Electron Emission from Multiply-Stacking Si Quantum Dots", | |
| Yuta Nakashima 1, Daichi Takeuchi 1,2, Katsunori Makihara 1, Akio Ohta 1, Mitsuhisa Ikeda 1 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 The Research Fellow of Japan Society for the Promotion of Science (Japan) |
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| [ Session 2-2 : Poster Presentation ] | ||
| 09:30 - 10:20 Poster Presentation (P-08 ~ P-13, 50 min) | ||
| [ Session 2-3: Invited & Regular Talks ] | ||
| 10:25 - 10:55 (30 min) | ||
| I-06 " | Photoluminescence of in-situ Phosphorus Doped Epitaxial Ge", | |
| (Invited) Yuji Yamamoto 1, Michael Reiner Barget 2, Giovanni Capellini 1,3, Michele Virgilio 4, Peter Zaumseil 1, Anne Hesse 1, Thomas Schroeder 1,5 and Bernd Tillack 1,6 1 IHP (Germany) 2 Dipartimento di Scienza dei Materiali, Università Milano-Bicocca (Italy) 3 Dipartimento di Scienze, Università degli Studi Roma Tre (Italy) 4 Dipartimento di Fisica ‘E Fermi’, Università di Pisa (Italy) 5 BTU Cottbus-Senftenberg (Germany) 6 Technische Universität Berlin (Germany) |
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| 10:55 - 11:25 (30 min) | ||
| I-07. " | Total Photoelectron Yield Spectroscopy of Electronic States of Oxide Thin Films and Wide Bandgap Semiconductors", | |
| (Invited) Akio Ohta 1,2, Taishi Yamamoto 1, Nguyen Xuan Truyen 1, Mitsuhisa Ikeda 1, Katsunori Makihara 1 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya Univ. (Japan) 2 Institute for Advanced Research, Nagoya Univ. (Japan) |
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| 11:25 - 11:45 (20 min) | ||
| O-07. " | Formation of Si-based Quantum Dots on Sub-micron patterned Si Substrates", | |
| Mitsuhisa Ikeda, Lei Gao, Kentaro Yamada, Katsunori Makihara, Akio Ohta and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 11:45 - 12:05 (20 min) | ||
| O-08. " | Electrical Characteristics of Epitaxial p-n Junctions of Si and SiGe Formed by Plasma CVD without Substrate Heating", | |
| Naofumi Ueno, Masao Sakuraba, Hisanao Akima and Shigeo Sato Research Institute of Electrical Communication, Tohoku University (Japan) |
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| 12:05 - 13:10 Lunch | ||
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[ Session 2-4 : Invited & Regular Talks ] |
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| 13:10 - 13:40 (30 min) | ||
| I-08. " | Fabrication and characterization of high quality perovskite films", | |
| (Invited) Teng Ma 1, Ayumi Hirano-Iwata 1,2 and Michio Niwano 1 1 RIEC, Tohoku Univ. (Japan) 2 AIMR, Tohoku Univ. (Japan) |
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| 13:40 - 14:00 (20 min) | ||
| O-09. " | Characterization of Remote Plasma CVD SiO2 on GaN(0001)", | |
| N. Truyen, A. Ohta, M. Ikeda, K. Makihara and S. Miyazaki Graduate School of Engineering, Nagoya University (Japan) | ||
| 14:00 - 14:20 (20 min) | ||
| O-10. " | Potential Change and Electrical Dipole at Ultrathin Oxide/Semiconductor Interfaces as Evaluated by XPS", | |
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Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 14:20 - 14:40 Break (20 min) | ||
| [ Session 2-5 : Invited Talks ] | ||
| 14:40 -15:10 (30 min) | ||
| I-09. " | Multifunction ZnO films via vanadium doping", | |
| (Invited) Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 15:10 -15:40 (30 min) | ||
| I-10. " | Physical implication of metal wave function evanescent at metal/Ge interface", | |
| (Invited) Tomonori Nishimura, Soshi Matsumoto, Takeaki Yajima and Akira Toriumi Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo (Japan) |
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| 15:40
- 15:50
Closing Remarks & Group Photo |
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