January 11-12, 2016,
Conference Room (4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Japan Society for the
Promotion of Science (JSPS): Core-to-Core Program "Atomically
Controlled Processing for Ultralarge Scale Integration"
- Japan Society for the
Promotion of Science (JSPS): 154th Committee on Semiconductor
Interfaces and Their Applications in University-Industry Cooperative
Research Committees
- Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University
| >>> Program & Abstracts (PDF, 13 MB) <<< |
| >>> Program (PDF, 150 KB) <<< |
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Technical
Program
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January 11 (Monday), 2016 |
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| 10:00 - 10:10 | ||
| Introductory Junichi Murota (Tohoku Univ.) |
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[ Session I: Invited & Regular Talks ] |
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10:10 - 10:40 (30 min) |
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| I-01. " | Ge Epitaxial Growth in View of Optical Device Applications", | |
| (Invited) Roger Loo 1, Srinivasan Ashwyn Srinivasan 1,2,3, Yosuke Shimura 1,4, Clement Porret 1, Dries Van Thourhout 2,3, Rik Van Deun 5, Toma Stoica 6, Dan Buca 6 and Joris Van Campenhout 1 1 imec (Belgium) 2 Photonics Research Group (INTEC), Ghent University-IMEC (Belgium) 3 Center for Nano- and Biophotonics (NB-Photonics), Ghent University (Belgium) 4 Instituut voor Kern- en Stralingsfysica, KU Leuven (Belgium) 5 L3 – Luminescent Lanthanide Lab, Department of Inorganic and Physical Chemistry, Ghent University (Belgium) 6 Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich (Germany) |
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| 10:40 - 11:10 (30 min) | ||
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I-02. " |
N-type Atomic-Layer-Doping for Group IV Semiconductor Materials", | |
| (Invited) Y. Yamamoto 1, J. Murota 2 and B. Tillack 1,3 1 IHP (Germany) 2 Micro System Integration Center, Tohoku University (Japan) 3 Technische Universität Berlin (Germany) |
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| 11:10 - 11:30 (20 min) | ||
| O-01. " |
Structural and Electrical Properties of Low Temperature CVD-Grown SiGe Epitaxial Layers", |
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| Shinichi Ike 1,2, Eddy Simoen 3, Yosuke Shimura 1, Andriy Hikavyy 3, Wilfried Vandervorst 3,4, Roger Loo 3, Wakana Takeuchi 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,5 1 Graduate School of Engineering, Nagoya University (Japan) 2 Research Fellow of the Japan Society for the Promotion of Science (Japan) 3 imec (Belgium) 4 Instituut voor Kern- en Stralingsfysica, KU Leuven (Belgium) 5 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
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11:30 - 11:50 (20 min) |
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| O-02. " | Mechanism of mobility enhancement in Ge p-MOSFET due to introduction of Al atoms in SiO2/GeO2 gate stacks", | |
| Yuta Nagatomi 1, Shintaro Tanaka 1, Tomoki Tateyama 1, Keisuke Yamamoto 2, Dong Wang 1 and Hiroshi Nakashima 2 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) 2 Art, Science and Technology Center for Cooperative Research, Kyushu University (Japan) |
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| 11:50 - 13:00 Lunch | ||
| [ Session II: Invited & Regular Talks ] | ||
| 13:00 - 13:30 (30 min) | ||
| I-03. " | High active Phosphorus concentration in in-situ doped Ge CVD layers using low growth temperature and high order Ge precursors: toward Group-IV optical interconnects", | |
| (Invited) Yosuke Shimura 1,2,*, Srinivasan Ashwyn Srinivasan 1,3,4, Dries Van Thourhout 3,4, Rik Van Deun 5, Marianna Pantouvaki 1, Joris Van Campenhout 1 and Roger Loo 1 1 Imec (Belgium) 2 Instituut voor Kern- en Stralingsfysica, KU Leuven (Belgium) 3 Photonics Research Group (INTEC), Ghent University-IMEC (Belgium) 4 Center for Nano- and Biophotonics (NB-Photonics), Ghent University (Belgium) 5 L3 – Luminescent Lanthanide Lab, Department of Inorganic and Physical Chemistry, Ghent University (Belgium) * Present affiliation: Graduate School of Engineering, Nagoya University (Japan) |
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| 13:30 - 14:00 (30 min) | ||
| I-04. " | Effects of postdeposition treatments on the electrical properties of Al2O3/GeO2 gate stack grown on Ge substrate by radical-enhanced atomic layer deposition", | |
| (Invited) Hiroshi Okamoto 1, Daichi Yamada 2, Hidefumi Narita 1, Yohei Otani 2, Chiaya Yamamoto 3, Junji Yamanaka 4, Tetsuya Sato 3 and Yukio Fukuda 2 1 Hirosaki University (Japan) 2 Tokyo University of Science, Suwa (Japan) 3 University of Yamanashi (Japan) 4 University of Yamanashi (Japan) |
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| 14:00 - 14:20 (20 min) | ||
| O-03. " | Control of slow traps of ALD Al2O3/Ge-based gate stacks with post plasma process", | |
| M. Ke 1,2, X. Yu 1,2, M. Takenaka 1,2 and S. Takagi 1,2 1 School of Engineering, the University of Tokyo (Japan) 2 JST-CREST (Japan) |
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| 14:20 - 14:40 (20 min) | ||
| O-04. " | Study of local polarization in ferroelectric HfO2 films with piezo-response force microscope (PFM)", | |
| Shigehisa Shibayama 1,2, Lun Xu 1, Shinji Migita 3 and Akira Toriumi 1 1 The University of Tokyo (Japan) 2 Research Fellow of Japan Society for the Promotion of Science (Japan) 3 National Institute of Advanced Industrial Science & Technology (AIST) (Japan) |
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| 14:40 - 15:00 Break (20 min) | ||
| [ Session III: Invited & Regular Talks ] | ||
| 15:00 - 15:30 (30 min) | ||
| I-05. " | Excimer Laser assisted dopant diffusion and crystallization in a-Si:H/nc-Si:H multilayer", | |
| (Invited) S. Stefanov 1, E. Martín 2, C. Serra 3, A. Benedetti 3, P. Alpuim 4, S. Chiussi 1 1 Applied Physics Department, University of Vigo (Spain) 2 Dpto. Mecánica, Máquinas, Motores Térmicos y Fluidos, University of Vigo (Spain) 3 CACTI, University of Vigo (Spain) 4 Department of Physics, University of Minho (Portugal) |
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| 15:30 - 16:00 (30 min) | ||
| I-06. " | Optically modulated electron emission from volcano-structured silicon field emitter arrays", | |
| (Invited) H. Shimawaki 1, M. Nagao 2, Y. Neo 3, H. Mimura 3, F. Wakaya 4 and M. Takai 4 1 Department of System and Information Engineering, Hachinohe Institute of Technology (Japan) 2 National Institute of Advanced Industrial Science and Technology (Japan) 3 Research Institute of Electronics, Shizuoka University (Japan) 4 Graduate School of Engineering Science, Osaka University (Japan) |
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| 16:00 - 16:20 (20 min) | ||
| O-05. " | Thermodynamic Control of GeOx Growth Suppression in SiGe Oxidation", | |
| Woojin Song and Akira Toriumi Department of Materials Engineering, The University of Tokyo (Japan) |
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| 16:20 - 16:40 (20 min) | ||
| O-06. " | Evaluation of Electronic Properties of Si/SiGe/Si(100) Heterostructures Formed by ECR Ar Plasma CVD", | |
| Naofumi Ueno, Masao Sakuraba, Hisanao Akima and Shigeo Sato Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Japan) |
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| 18:00
- 20:00 Banquet (Hotel Bel Air Sendai, 1st Floor Restaurant) |
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January 12 (Tuesday), 2016 |
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[ Session IV : Short Talks for Poster ] |
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| 09:00 - 09:05 (5 min) | ||
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P-01. " |
Characterization of defects in Ge substrates using deep-level transient spectroscopy (DLTS)", | |
| Hiroki Ikegaya, Tomonori Nishimura and Akira Toriumi Department of Materials Engineering, The University of Tokyo (Japan) |
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| 09:05 - 09:10 (5 min) | ||
| P-02. " | Raman and XRD analysis of ferroelectric-phase HfO2 films", | |
| Kazutaka Izukashi 1, Tomonori Nishimura 1, Shinji Migita 2 and Akira Toriumi 1 1 Department of Materials Engineering, The University of Tokyo (Japan) 2 National Institute of Advanced Industrial Science & Technology (AIST) (Japan) |
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| 09:10 - 09:15 (5 min) | ||
| P-03. " | C-mediated Ge quantum dot growth on Si (100) substrate", | |
| Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 09:15 - 09:20 (5 min) | ||
| P-04. " | Ge(111) growth in rhombohedral alignment on c-plane sapphire substrate", | |
| Yamato Kawaguchi, Yuhki Itoh, Tomoyuki Kawashima, Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 09:20 - 09:25 (5 min) | ||
| P-05. " | Phosphorus doping into Ge with low electrical damage by liquid immersion laser doping", | |
| Kouta Takahashi 1, Masashi Kurosawa 1,2,3, Hiroshi Ikenoue 4, Mitsuo Sakashita 1, Wakana Takeuchi 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,2 1 Graduate School of Eng., Nagoya Univ. (Japan) 2 Inst. of Mater. and Sys. for Sustainability, Nagoya Univ. (Japan) 3 Inst. for Advanced Research, Nagoya University (Japan) 4 Graduate School of Info. Sci. and Elec. Eng., Kyushu Univ. (Japan) |
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| 09:25 - 09:30 (5 min) | ||
| P-06. " | Crystalline and Electrical Properties of in-situ Sb-Doped Ge1-xSnx Epitaxial Layers", | |
| Jihee Jeon 1, Takanori Asano 1,2, Yosuke Shimura 1, Wakana Takeuchi 1, Masashi Kurosawa 1,3, Mitsuo Sakashita 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 Research Fellow of the Japan Society for the Promotion of Science (Japan) 3 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
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| 09:30 - 09:35 (5 min) | ||
| P-07. " | Formation of GeSn layer sandwiched with strain-controlled GeSiSn layers", | |
| Masahiro Fukuda 1, Takashi Yamaha 1,2, Takanori Asano 1,2, Syunsuke Fujinami 1, Yosuke Shimura 1, Masashi Kurosawa 1,3, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Grad. Sc. of Eng., Nagoya Univ. (Japan) 2 JSPS Research Fellow (Japan) 3 IMaSS, Nagoya Univ. (Japan) |
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| 09:35 - 09:40 (5 min) | ||
| P-08. " | Formation of poly-Si1-x-ySnxCy ternary alloy layer and characterization of its crystalline and optical properties", | |
| Shota Yano 1, Takashi Yamaha 1,2, Yosuke Shimura 1, Wakana Takeuchi 1, Mitsuo Sakashita 1, Masashi Kurosawa 1,3, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 Resarch Fellow of JSPS (Japan) 3 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
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| 09:40 - 09:45 (5 min) | ||
| P-09. " | Influences of metal/Ge contact and surface passivation on direct band gap light emission and detection for asymmetric metal/Ge/metal diodes", | |
| Takayuki Maekura 1 Chisato Motoyama 1, Keisuke Yamamoto 2, Hiroshi Nakashima 2 and Dong Wang 1 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) 2 Art, Science and Technology Center for Cooperative Research, Kyushu University (Japan) |
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| 09:45 - 09:50 (5 min) | ||
| P-10. " | Formation of GeSn Crystals with High Sn Concentration on Insulating Substrate by Pulsed Laser-Annealing", | |
| K. Moto 1, R. Matsumura 1,2, T. Sadoh 1, H. Ikenoue 3 and M. Miyao 1 1 Dept. of Electronics, Kyushu Univ. (Japan) 2 JSPS Research Fellow (Japan) 3 Dept. of Gigaphoton Next GLP, Kyushu Univ. (Japan) |
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| 09:50 - 09:55 (5 min) | ||
| P-11. " | Low Temperature (~150oC) Au-Induced Lateral Growth of a-GeSn on Insulator", | |
| T. Sakai 1, R. Matsumura 1,2, T. Sadoh 1 and M. Miyao 1 1 Department of Electronics, Kyushu University (Japan) 2 JSPS Research Fellow (Japan) |
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| 09:55 - 10:00 (5 min) | ||
| P-12. " | Impact of Ge Capping Layer on Ta Nanodots Formation Induced by Remote Hydrogen Plasma", | |
| Yaping Wang, Daichi Takeuchi, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 10:00 - 10:05 (5 min) | ||
| P-13. " | Evaluation of Electronic States of Thermally-grown SiO2/4H-SiC", | |
| Hiromasa Watanabe, Akio Ohta, Nobuyuki Fujimura, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 10:05 - 10:10 (5 min) | ||
| P-14. " | High Density Ti Nanodots Formation and Improvement of ReRAM Characteristics by Embedding Ti Nanodots", | |
| Yusuke Kato, Akio Ohta, Katsunori Makihara and Seiichi Miyazaki Grad. Sch. of Eng., Nagoya Univ. (Japan) |
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| 10:10 - 10:15 (5 min) | ||
| P-15. " | Characterization of Electronic Charged States of FePt-NDs Stacked Structures by Kelvin Force Microscopy", | |
| Taiga Kawase, Yuusuke Mitsuyuki, Akio Ohta, Katsunori Makihara, Takeshi Kato, Satoshi Iwata and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 10:15 - 10:20 (5 min) | ||
| P-16. " | Current and voltage dependence of STM induced hydrogen desorption on Si(111)", | |
| Wu Li, Shigeo Sato, Hisanao Akima and Masao Sakuraba Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Japan) |
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| 10:20 - 10:25 (5 min) | ||
| P-17. " | Characteristics of B Doping in Si Epitaxial Growth on Si(100) Using ECR Ar Plasma CVD", | |
| Koya Motegi, Masao Sakuraba, Hisanao Akima and Shigeo Sato Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Japan) |
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| 10:25 - 10:40 Break (15 min) | ||
| [ Session V : Poster Presentation ] | ||
| 10:40 - 11:50 Poster Presentation (P-01 ~ P-17, 70 min) | ||
| 11:50 - 13:00 Lunch | ||
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[ Session VI: Invited & Regular Talks ] |
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| 13:00 - 13:30 (30 min) | ||
| I-07. " | SiGeSn - A direct semiconductor compound for electronic device applications?", | |
| (Invited) J. Schulze Univ. Stuttgart (Germany) |
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| 13:30 - 14:00 (30 min) | ||
| I-08. " | Investigation of binary and ternary SiGeSn MOS structures", | |
| (Invited) C. Schulte-Braucks 1, T. Lehndorff 1, S. Glass 1, N. von den Driesch 1, S. Wirths 1, J.M. Hartmann 2,3, Z. Ikonic 4, S. Mantl 1, D. Buca 1 1 Peter Grünberg Institute (PGI 9) and JARA-FIT, Forschungszentrum Jülich GmbH (Germany) 2 Univ. Grenoble Alpes (France) 3 CEA, LETI (France) 4 Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds (UK) | ||
| 14:00 - 14:20 (20 min) | ||
| O-07. " | Control of Schottky barrier height at metal/Ge interface by insertion of Ge1-xSnx layer", | |
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Akihiro Suzuki 1, Osamu Nakatsuka 1, Shigehisa Shibayama 1,2, Mitsuo Sakashita 1, Wakana Takeuchi 1, Masashi Kurosawa 1,3 and Shigeaki Zaima 1,3 1 Grad. Sch. of Eng., Nagoya Univ. (Japan) 2 The Research Fellow of JSPS (Japan) 3 IMaSS, Nagoya Univ. (Japan) |
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| 14:20 - 14:40 (20 min) | ||
| O-08. " | Determination of Electron Affinity of Si-based Materials using by X-ray Photoelectron Spectroscopy", | |
| Nobuyuki Fujimura, Akio Ohta, Katsunori Makihara and Seiichi Miyazaki Grad. Sch. of Eng., Nagoya Univ. (Japan) |
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| 14:40 -15:00 (20 min) | ||
| O-09. " | Study of Electron Field Emission from Multiply-Stacking Si Quantum Dots", | |
| Daichi Takeuchi, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 15:00 -15:20 (20 min) | ||
| O-10. " | Analysis of carbon mediation in Ge quantum dot formation on Si(100) substrate", | |
| Yuhki Itoh, Yuhki Satoh, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 15:20
- 15:40
Closing Remarks & Group Photo |
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