| Link to
"8th International WorkShop on New Group IV Semiconductor Nanoelectronics" |
Link to "JSPS Core-to-Core Program : ICRC-ACP4ULSI" |
January
29-30, 2015,
Conference Room (4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Japan Society for the
Promotion of Science (JSPS): Core-to-Core Program "Atomically
Controlled Processing for Ultralarge Scale Integration"
- Japan Society for the
Promotion of Science (JSPS): 154th Committee on Semiconductor
Interfaces and Their Applications in University-Industry Cooperative
Research Committees
| >>> Program & Abstracts (PDF, 13 MB) <<< |
| >>> Program (PDF, 82 KB) <<< |
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Technical
Program (Tentative, Jan. 21, 2015)
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January 29 (Thursday), 2015 |
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| 10:00 - 10:10 | ||
| Introductory Junichi Murota (Tohoku Univ.) |
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[ Session I: Invited & Regular Talks ] |
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10:10 - 10:40 (30 min) |
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| I-01. " | High quality local GeOI fabrication by lateral selective growth of Germanium", | |
| (Invited) Yuji Yamamoto 1, Markus Andreas Schubert 1, Christian Reich 1 and Bernd Tillack 1,2 1 IHP (Germany) 2 Technische Universität Berlin (Germany) |
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| 10:40 - 11:00 (20 min) | ||
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O-01. " |
Effects of strain, interface states and back bias on electrical characteristics of Ge-source UTB strained-SOI tunnel FETs", | |
| Minsoo Kim 1,2, Yuki K. Wakabayashi 1, Ryosho Nakane 1, Masafumi Yokoyama 1,2, Mitsuru Takenaka 1,2 and Shinichi Takagi 1,2 1 The Univ. of Tokyo (Japan) 2 JST-CREST (Japan) |
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11:00 - 11:20 (20 min) |
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| O-02. " | Characterization of Electroluminescence from Multiply-Stack of Doped Si Quantum Dots", | |
| Takahisa Yamada 1, Katsunori Makihara 1, Mitsuhisa Ikada 2 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Graduate School of Advanced Sciences of Matter, Hiroshima University (Japan) |
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| 11:20 - 11:40 (20 min) | ||
| O-03. " |
Characterization of Electron Field Emission from High Density Self-aligned Si-based Quantum Dots", |
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| Daichi Takeuchi 1, Katsunori Makihara 1, Akio Ohta 2, Mitsuhisa Ikeda 3 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 VBL, Nagoya University (Japan) 3 Graduate School of Advanced Sciences of Matter, Hiroshima University (Japan) |
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11:40 - 12:00 (20 min) |
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| O-04. " | Study of Raman Peak Shift in Heavily Doped Germanium - A new research opportunity using ultra-thin GeOI", | |
| Shoichi Kabuyanagi 1, 2, Tomonori Nishimura 1, 2, Takeaki Yajima 1, 2 and Akira Toriumi 1, 2 1 Department of Materials Engineering, The University of Tokyo (Japan) 2 JST-CREST (Japan) |
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| 12:00 - 13:20 Lunch | ||
| [ Session II: Invited & Regular Talks ] | ||
| 13:20 - 13:50 (30 min) | ||
| I-02. " | Growth of Germanium-Lead Alloys by Pulsed Laser Induced Epitaxy", | |
| (Invited) Stefan Stefanov 1, Carmen Serra 2, Alessandro Benedetti 2, E. Martín 3, Peter Zaumseil 4, Dan Buca 5 and Stefano Chiussi 1 1 Dpto. Física Aplicada, E. I. Industrial, Univ. de Vigo (Spain) 2 CACTI, Univ. de Vigo (Spain) 3 Dpto. Mecánica, Máquinas, Motores Térmicos y Fluidos, Univ. de Vigo (Spain) 4 IHP (Germany) 5 Peter Grünberg Institute 9 and JARA-FIT, Forschungszentrum-Jülich (Germany) |
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| 13:50 - 14:10 (20 min) | ||
| O-05. " | Impact of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage and Electron Mobility in Ge n-MOSFETs", | |
| C. H. Lee 1,2, T. Nishimura 1,2, C. Lu 1,2, S. Kabuyanagi 1,2, and A. Toriumi 1,2 1 Department of Materials Engineering, The University of Tokyo (Japan) 2 JST-CREST (Japan) |
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| 14:10 - 14:30 (20 min) | ||
| O-06. " | Composition-controlled SiGe crystals on insulator by rapid-melting growth -Analysis and control of SiGe segregation-", | |
| Ryo Matsumura 1,2, Taizoh Sadoh 1, and Masanobu Miyao 1 1 Department of Electronics, Kyushu University (Japan) 2 JSPS Research Fellow (Japan) |
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| 14:30 - 14:50 (20 min) | ||
| O-07. " | Impact of Post Metallization Annealing on Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack", | |
| Akio Ohta 1, Hideki Murakami 2, Katsunori Makihara 3, and Seiichi Miyazaki 3 1 Venture Business Laboratory, Nagoya University (Japan) 2 Graduate School of Advanced Science of Matter, Hiroshima University (Japan) 3 Graduate School of Engineering, Nagoya University (Japan) |
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| 14:50 - 15:10 Break (20 min) | ||
| [ Session III: Invited & Regular Talks ] | ||
| 15:10 - 15:40 (30 min) | ||
| I-03. " | Electrical Properties of Metal/Ge contacts with Nitrogen-Contained Amorphous Interlayers", | |
| Keisuke Yamamoto 1, Ryutaro Noguchi 1, Masatoshi Mitsuhara 1, Minoru Nishida 1, Toru Hara 2, Dong Wang 1 and Hiroshi Nakashima 1 1 Kyushu University (Japan) 2 National Institute for Materials Science (Japan) |
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| 15:40 - 16:00 (20 min) | ||
| O-08. " | Dielectric Film Engineering for Ge-rich SiGe MOS Gate Stacks", | |
| C-T. Chang, T. Nishimura and A. Toriumi Department of Materials Engineering, The University of Tokyo (Japan) |
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| 16:00 - 16:20 (20 min) | ||
| O-09. " | Fabrication and Characterization of n+Si/pGe Heterojunctions by Narrow Membrane Bonding", | |
| Tony C. Liu 1, 2, Shoichi Kabuyanagi 1, 2, Tomonori Nishimura 1, 2 and Akira Toriumi 1, 2 1 Department of Materials Engineering, The University of Tokyo (Japan) 2 JST-CREST (Japan) |
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| 16:20 - 16:40 (20 min) | ||
| O-10. " | Crystal growth of Si1-xSnx alloys with high Sn contents", | |
| Masashi Kurosawa 1,2, Motohiro Kato 1, Yuki Nagae 1, Takashi Yamaha 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 JSPS Research Fellow (Japan) |
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| 18:00
- 20:00 Banquet (Hotel Bel Air Sendai, 2nd Floor) |
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January 30 (Friday), 2015 |
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[ Session IV : Short Talks for Poster ] |
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| 09:30 - 09:35 (5 min) | ||
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P-01. " |
Epitaxial Growth of Ge1-xSnx Thin Films by using Metal-Organic Chemical Vapor Deposition", | |
| Yuki Inuzuka 1, Shinichi Ike 1,2, Takanori Asano 1,2, Wakana Takeuchi 1, Osamu Nakatsuka 1, and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 Research Fellow of the Japan Society for the Promotion of Science (Japan) 3 EcoTopia Science Institute, Nagoya University (Japan) |
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| 09:35 - 09:40 (5 min) | ||
| P-02. " | Ultra-Low-Temperature Crystallization of a-GeSn on Insulator for Flexible Electronics", | |
| H. Chikita 1, R. Matsumura 1,2, Y. Kai 1, T. Sadoh 1 and M. Miyao 1 1 Department of Electronics, Kyushu University (Japan) 2 JSPS Research Fellow (Japan) |
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| 09:40 - 09:45 (5 min) | ||
| P-03. " | High Density Formation of Mn-Ge Nanodots Induced by Remote Hydrogen Plasma", | |
| Y. Wen, K. Makihara, A. Ohta and S. Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 09:45 - 09:50 (5 min) | ||
| P-04. " | Formation of strain-free Si1-x-yGexSny layers on Ge surfaces by using solid-liquid coexisting annealing", | |
| Motohiro Kato 1, Masashi Kurosawa 1,2, Takashi Yamaha 1, Noriyuki Taoka 1,†, Osamu Nakatsuka 1 and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 JSPS (Japan) 3 EcoTopia Science Institute, Nagoya University (Japan) † Present affiliation: IHP (Germany) |
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| 09:50 - 09:55 (5 min) | ||
| P-05. " | Impact of Magnetic-Field Application on Electron Transport Through FePt Alloy Nanodots", | |
| Yuuki Kabeya, Hai Zhang, Akio Ohta, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 09:55 - 10:00 (5 min) | ||
| P-06. " | Formation and Characterization of High Density FePt Alloy Nanodots Induced by Remote Hydrogen Plasma", | |
| Yusuke Mitsuyuki, Yuuki Kabeya, Katsunori Makihara, Takeshi Kato, Satoshi Iwata and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 10:00 - 10:05 (5 min) | ||
| P-07. " | Effect of Si(100)c(4×4) surface reconstruction on Ge dots formation", | |
| Yuhki Satoh, Yuhki Itoh, Tomoyuki Kawashima, and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 10:05 - 10:10 (5 min) | ||
| P-08. " | Impact of Remote Hydrogen Plasma on Micro-roughness and Electronic States at 4H-SiC(0001) Surface", | |
| Truyen xuan Nguyen 1, Akio Ohta 2, Daichi Takeuchi 1, Hai Zhang 1, Katsunori Makihara 1 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Venture Business Laboratory, Nagoya University (Japan) |
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| 10:10 - 10:15 (5 min) | ||
| P-09. " | Photoluminescence Properties of Si Quantum Dots with Ge Core", | |
| Keigo Kondo, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 10:15 - 10:20 (5 min) | ||
| P-10. " | Influence of Partial Pressures upon Rate Coefficients of SiH4 and GeH4 in ECR Ar Plasma CVD of Si1-xGex on Si(100) without Substrate Heating", | |
| Naofumi Ueno, Masao Sakuraba and Shigeo Sato Laboratory for Nanoelectronics and Spintronics,Research Institute of Electrical Communication, Tohoku University (Japan) |
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| [ Session V : Poster Presentation ] | ||
| 10:20 - 11:50 Poster Presentation (P-01 ~ P-10, 90 min) | ||
| 11:50 - 13:10 Lunch | ||
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[ Session VI: Invited & Regular Talks ] |
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| 13:10 - 13:40 (30 min) | ||
| I-04. " | Formation mechanism of aluminum germanate layer on germanium substrate by radical-enhanced atomic layer deposition", | |
| (Invited) Hiroshi Okamoto 1, Tomoya Yokohira 2, Kosei Yanachi 2, Chiaya Yamamoto 3, Byeonghaku Yoo 3, Junji Yamanaka 4, Tetsuya Sato 3, Toshiyuki Takamatsu 5, Hidefumi Narita 1 and Yukio Fukuda 2 1 Hirosaki University (Japan) 2 Tokyo University of Science, Suwa (Japan) 3 University of Yamanashi (Japan) 4 University of Yamanashi (Japan) 5 SST Inc. (Japan) |
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| 13:40 - 14:00 (20 min) | ||
| O-11. " | Effect of Al post metallization annealing on Al2O3/GeOX/Ge gate stack", | |
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Yuta Nagatomi 1, Yuichi Nagaoka 1, Sintaro Tanaka 1, Keisuke Yamamoto 2, Dong Wang 1 and Hiroshi Nakashima 2 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) 2 Art, Science and Technology Center for Cooperative Research, Kyushu University (Japan) |
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| 14:00 - 14:20 (20 min) | ||
| O-12. " | Crystalline and Optical Properties of Ge1-x-ySixSny Ternary Alloy Layers for Solar Cell Application", | |
| Takashi Yamaha 1, Shunsuke Asaba 1, Tatsuya Terashima 1, Takanori Asano 1, 2, Wakana Takeuchi 1, Mitsuo Sakashita 1, Noriyuki Taoka 1, Osamu Nakatsuka 1, and Shigeaki Zaima 1,3 1 Graduate School of Engineering, Nagoya University (Japan) 2 JSPS Research Fellow (Japan) 3 EcoTopia Science Institute, Nagoya University (Japan) |
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| 14:20 -14:40 (20 min) | ||
| O-13. " | High Density Formation of Fe-Silicide Nanodots Induced by Remote Hydrogen Plasma", | |
| Hai Zhang 1, Katsunori Makihara 1, Akio Ohta 2, Mitsuhisa Ikeda 3 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Ventur Busines Laboratory, Nagoya University (Japan) 3 Graduate School of Advanced Science of Matter, Hiroshima University (Japan) |
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| 14:40 - 15:00 Break (20 min) | ||
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[ Session VII: Invited & Regular Talks ] | ||
| 15:00 - 15:30 (30 min) | ||
| I-05. " | Behaviors of tin related defects in Sb doped n-type germanium", | |
| (Invited) W. Takeuchi 1, N. Taoka 1, M. Sakashita 1, O. Nakatsuka 1 and S. Zaima 1,2 1 Grad. Sc. of Eng., Nagoya Univ. (Japan) 2 EcoTopia Science Institute, Nagoya Univ. (Japan) |
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| 15:30 - 15:50 (20 min) | ||
| O-14. " | Effect of sub-monolayer carbon on Ge/Si(100) layer on Ge dot formation", | |
| Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 15:50 - 16:10 (20 min) | ||
| O-15. " | Photoluminescence Property of Ge1−xSnx Epitaxial Layers Grown on Ge(001) substrates", | |
| Takanori
Asano 1,2, Koya Hozaki 1, Takeshi Koyama 3, Noriyuki Taoka 1,†, Osamu
Nakatsuka 1, Hideo Kishida 3 and Shigeaki Zaima 1,4 1 Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University (Japan) 2 Research Fellow of the Japan Society for the Promotion of Science (Japan) 3 Department of Applied Physics, Graduate School of Engineering, Nagoya University (Japan) 4 EcoTopia Science Institute, Nagoya University (Japan) † Present affiliation: IHP (Germany) |
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| 16:10 - 16:30 Closing Remarks | ||