| Link to
"7th International WorkShop on New Group IV Semiconductor Nanoelectronics" |
Link to "JSPS Core-to-Core Program : ICRC-ACP4ULSI" |
January
27-28, 2014,
Conference Room (4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Japan Society for the
Promotion of Science (JSPS): Core-to-Core Program "Atomically
Controlled Processing for Ultralarge Scale Integration"
- Japan Society for the
Promotion of Science (JSPS): 154th Committee on Semiconductor
Interfaces and Their Applications in University-Industry Cooperative
Research Committees
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Technical
Program
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January 27 (Monday) |
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| 13:30 - 13:40 | ||
| Opening
Remarks Junichi Murota (RIEC, Tohoku Univ.) |
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Abstract |
[ Session I ] |
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13:40 - 14:10 (30 min) |
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| I-1. " | B and P Atomic Layer Doping of Si / SiGe / Ge for Advanced Process Technology", | |
| (Invited) Yuji Yamamoto 1, Junichi Murota 2 and Bernd Tillack 1, 3 1 IHP (Germany) 2 Research Institute of Electrical Communication, Tohoku University (Japan) 3 Technische Universität Berlin (Germany) |
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| 14:10 - 14:40 (30 min) | ||
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I-2. " |
Fabrication of MOS and Light Emitting Devices Using Contacts with Low Electron and Hole Barrier Heights", | |
| (Invited) Hiroshi Nakashima 1, Keisuke Yamamoto 1 and Dong Wang 2 1 Art, Science and Technology Center for Cooperative Research, Kyushu University (Japan) 2 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) |
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| 14:40 - 15:10 (30 min) | ||
| I-3. " |
Orientation-Controlled Large-Grain SiGe Crystal on Flexible Substrate by Low-Temperature Metal-Induced Crystallization", |
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| (Invited) T. Sadoh, J.-H. Park and M. Miyao Department of Electronics, Kyushu University (Japan) |
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15:10 - 15:30 (20 min) |
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| O-1. " | Formation and Electrical Property of Epitaxial NiGe/Ge(110) Schottky Contacts", | |
| Deng Yunsheng, Osamu Nakatsuka, Noriyuki Taoka and Shigeaki Zaima Graduate School of Engineering, Nagoya University (Japan) |
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| 15:30 - 15:50 Break (20 min) | ||
| Abstract ↓ |
[ Session II ] | |
| 15:50 - 16:20 (30 min) | ||
| I-4. " | Dopant atom devices based on Si nanostructures", | |
| (Invited) Michiharu Tabe 1, Daniel Moraru 1, Earfan Hamid 1, Arup Samanta 1, Le The Anh 2, Takeshi Mizuno 1 and Hiroshi Mizuta 2,3 1 Research Institute of Electronics, Shizuoka University (Japan) 2 School of Materials Science, Japan Advanced Institute of Science and Technology (Japan) 3 University of Southampton (United Kingdom) |
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| 16:20 - 16:50 (30 min) | ||
| I-5. " | SiGe Processes and Their Device Applications Using Sputter Epitaxy Method", | |
| (Invited) Yoshiyuki Suda 1, Takahiro Tsukamoto 1, Sohei Fujimura 1, Satoshi Tamanyu 1, Akira Motohashi 1, Midori Ikeda 1, Nobumitsu Hirose 2, Akifumi Kasamatsu 2, Takashi Mimura 2 and Toshiaki Matsui 2 1 Graduate School of Engineering, Tokyo University of Agriculture and Technology (Japan) 2 National Inst. of Information and Communications Technology (Japan) |
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| 16:50 - 17:20 (30 min) | ||
| I-6. " | Self-Assembly of a Monolayer Graphene Oxide Film Based on Surface-Modification of Substrates", | |
| (Invited) T. Ogino and T. Takami Yokohama National University (Japan) |
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| 17:20 - 17:40 (20 min) | ||
| O-2. " | Steep Slope Ge-Source Tunnel FETs with Biaxial Tensile Strain Si Channels", | |
| Minsoo Kim 1, 2, Yuki Wakabayashi 1, Ryosho Nakane 1, Masafumi Yokoyama 1, Mitsuru Takenaka 1, 2 and Shinichi Takag 1, 2 1 The Univ. of Tokyo (Japan) 2 JST-CREST (Japan) |
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| 17:40 - 18:00 (20 min) | ||
| O-3. " | Electron emission from metal-oxide-semiconductor cathode based on nanocrystalline silicon", | |
| H. Shimawaki 1, Y. Neo 2, H. Mimura 2, F. Wakaya 3 and M. Takai 3 1 Department of System and Information Engineering, Hachinohe Institute of Technology (Japan) 2 Research Institute of Electronics, Shizuoka University (Japan) 3 Center for Quantum Science and Technology under Extreme Conditions, Osaka University (Japan) |
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January 28 (Tuesday) |
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Abstract |
[ Session III : Short Talk for Poster ] |
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| 08:45 - 08:50 (5 min) | ||
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P-01. " |
Dynamic control of lateral crystallization for Group IV mixed-crystal semiconductor on insulating substrate", | |
| Ryo Matsumura, Hironori Chikita, Taizoh Sadoh and Masanobu Miyao Department of Electronics, Kyushu University (Japan) |
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| 08:50 - 08:55 (5 min) | ||
| P-02. " | Influences of Sn on low-temperature crystallization of a-GeSn mixed or a-Ge/Sn stacked layer on crystal substrate", | |
| H. Chikita, R. Matsumura, Y. Kinoshita, A. Ooato, T. Sadoh and M. Miyao Department of Electronics, Kyushu University (Japan) |
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| 08:55 - 09:00 (5 min) | ||
| P-03. " | Characterization of Crystalline Structures of SiGe Substrate Formed by Traveling Liquidus-Zone Method and Fabrication of Strained Ge Layer", | |
| Takashi Yamaha 1, Osamu Nakatsuka 1, Noriyuki Taoka 1, Kyoichi Kinoshita 2, Shinichi Yoda 2 and Shigeaki Zaima 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency (Japan) |
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| 09:00 - 09:05 (5 min) | ||
| P-04. " | Substrate Orientation Dependence of Crystalline Structures of Epitaxial GeSn Layers", | |
| Takanori Asano 1, Shohei Kidowaki 1, Masashi Kurosawa 1,2, Noriyuki Taoka 1, Osamu Nakatsuka 1 and Shigeaki Zaima 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Research Fellow of the JSPS (Japan) |
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| 09:05 - 09:10 (5 min) | ||
| P-05. " | High Density Formation of FePt Alloy Nanodots Induced by Remote Hydrogen Plasma and Characterization of Their Magnetic Properties", | |
| Ryo Fukuoka, Hai Zhang, Katsunori Makihara, Yoshihiro Tokuoka, Takeshi Kato, Satoshi Iwata and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 09:10 - 09:15 (5 min) | ||
| P-06. " | Characterization of Local Electronic Transport through Si-Nanocrystals/ Si-Nanocolumnar Structures by Non-contact Conductive Atomic ForceMicroscopy", | |
| Daichi Takeuchi 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Graduate School of Advanced Science of Matter, Hiroshima University (Japan) |
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| 09:15 - 09:20 (5 min) | ||
| P-07. " | Impact of Pulsed Bias Application on Electroluminescence Properties from One-dimensionally Self-Aligned Si-based Quantum Dots", | |
| Yoshihisa Suzuki 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Graduate School of Advanced Science of Matter, Hiroshima University (Japan) |
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| 09:20 - 09:25 (5 min) | ||
| P-08. " | Evaluation of Chemical Bonding Features and Resistive Switching in TiOx/SiOx Stack in Ti Electrode MIM Diodes", | |
| Takashi Arai 1, Chong Liu 1, Akio Ohta 1, 2, Katsunori Makihara 1 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Venture Business Laboratory, Nagoya University (Japan) |
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| 09:25 - 09:30 (5 min) | ||
| P-09. " | Electroluminescence from Multiply-Stacking B-doped Si Quantum Dots", | |
| Takahisa Yamada 1, Katsunori Makihara 1, Yoshihisa Suzuki 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Graduate School of Advanced Science of Matter, Hiroshima University (Japan) |
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| 09:30 - 09:35 (5 min) | ||
| P-10. " | Formation of High-Density Magnetic Nanodots on Ultrathin SiO2 Induced by Remote H2 Plasma", | |
| Yuuki Kabeya, Hai Zhang, Ryo Fukuoka, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering,Nagoya University (Japan) |
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| 09:35 - 09:40 (5 min) | ||
| P-11. " | Direct Band Gap Modulation in Ultra-thin Highly Doped n-type GeOI", | |
| Shoichi Kabuyanagi 1, 2, Tomonori Nishimura 1, 2, Kosuke Nagashio 1, 2 and Akira Toriumi 1, 2 1 Department of Materials Engineering, The University of Tokyo (Japan) 2 JST-CREST (Japan) |
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| 09:40 - 09:45 (5 min) | ||
| P-12. " | Selection of desirable trivalent metal oxides as doping material into GeO2", | |
| C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio and A. Toriumi The University of Tokyo (Japan), JST-CREST (Japan) |
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| 09:45 - 09:50 (5 min) | ||
| P-13. " | Characterization of Interface State properties of Strained-Si MOS Interfaces by Conductance Method", | |
| W.-L. Cai, M. Takenaka and S. Takagi School of Engineering, The University of Tokyo (Japan), JST CREST (Japan) |
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| 09:50 - 09:55 (5 min) | ||
| P-14. " | Formation of Ge quantum dots using in-situ post annealing amorphous Ge/C structure", | |
| Shinji Hatakeyama, Yuhki Itoh, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 09:55 - 10:00 (5 min) | ||
| P-15. " | Effect of carbon binding states on Ge growth on Si(100) substrate", | |
| Yuhki Itoh, Shinji Hatakeyama, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
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| 10:00 - 10:05 (5 min) | ||
| P-16. " | high-speed single flux quantum parallel multiplier using Dadda type partial product addition", | |
| Akifumi Yamada 1, Takeshi Onomi 2 and Kouji Nakajima 2 1 Graduate School of Information Sciences, Tohoku University (Japan) 2 Reseach Institute of Electrical Communication, Tohoku University (Japan) |
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| 10:05 - 10:10 (5 min) | ||
| P-17. " | FPGA Implementation of the Discrete Inverse-function Delayed Neural Network with High Order Synaptic Connections", | |
| K. Matsui 1, Y. Hayakawa 2, S. Sato 1 and K. Nakajima 1 1 Laboratoey for Brainware/Laboratory for Nanoelectronics and Spintronics, Reseach Institute of Electrical Communication, Tohoku University (Japan) 2 Sendai National College of Technology (Japan) |
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| 10:10 - 10:15 (5 min) | ||
| P-18. " | Effect of hydrogen treatment on characteristics of titanium oxide nanotube micro hydrogen gas sensors", | |
| Tsubasa Tobe, Ryota Kojima, Yasuo Kimura and Michio Niwano Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Japan) |
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| 10:15 - 10:20 (5 min) | ||
| P-19. " | Effect of slow cooling on field-effect mobility of P3HT films", |
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| Shohei Iino, Daisuke Tadaki, Yasuo Kimura and Michio Niwano Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Japan) |
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| 10:20 - 10:25 (5 min) | ||
| P-20. " | Low-Temperature Reduction of Ge Oxide by Si and SiH4 in Low-Pressure H2 and Ar Environment", | |
| Kaichiro Minami 1, 2, Atsushi Moriya 2, Kazuhiro Yuasa 2, Kiyohiko Maeda 2, Masayuki Yamada 2, Yasuo Kunii 2, Michio Niwano 1 and Junichi Murota 1 1 Research Institute of Electrical Communication, Tohoku University (Japan) 2 Hitachi Kokusai Electric Inc. (Japan) |
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| 10:25 - 10:30 (5 min) | ||
| P-21. " | Characterization of Strain in Si1-xGex Films Epitaxially Grown on Si(100) by ECR Ar Plasma CVD without Substrate Heating", | |
| Naofumi Ueno 1, Masao Sakuraba 1, Junichi Murota 2 and Shigeo Sato 1 1 Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University (Japan) 2 Research Institute of Electrical Communication, Tohoku University (Japan) |
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| [ Session IV : Poster Presentation ] | ||
| 10:30 - 12:00 (90 min) | ||
| P-01 ~ P-21 |
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| 12:00 - 13:30 Lunch | ||
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Abstract |
[ Session V ] |
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| 13:30 - 14:00 (30 min) | ||
| I-7. " | Scanning Pulsed Laser Induced Epitaxy of (Si)GeSn alloys", | |
| (Invited) Stefan Stefanov 1, Carmen Serra 2, Alessandro Benedetti 2, Michael Oehme 3, Jӧrg Schulze 3, Stephan Wirths 1, Dan Buca 4 and Stefano Chiussi 1 1 Dpto. Física Aplicada, Univ. de Vigo (Spain) 2 CACTI, Univ. de Vigo (Spain) 3 Institut für Halbleitertechnik (IHT), Univ. Stuttgart (Germany) 4 Peter Grünberg Institute 9 and JARA - FIT, Forschungszentrum - Jülich (Germany) |
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| 14:00 - 14:20 (20 min) | ||
| O-4. " | Fabrication of Metal-Nitride/Ge Contacts with Extremely Low Electron Barrier Height and Its Clarification of the Physical Origin", | |
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Keisuke Yamamoto 1, Dong Wang 2 and Hiroshi Nakashima 1 1 Art, Science and Technology Center for Cooperative Research, Kyushu University (Japan) 2 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) |
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| 14:20 - 14:40 (20 min) | ||
| O-5. " | Comparison of the properties of traps in Ge-MIS structures by conductance method and deep level transient spectroscopy (DLTS)", | |
| H. Okamoto 1, H. Narita 1, T. Ono 1, Y. Fukuda 2, Y. Otani 2, T. Sato 3, H. Toyota 4, M. Sakuraba 5, J. Murota 5, and M. Niwano 5 1 Hirosaki University (Japan) 2 Tokyo University of Science, Suwa (Japan) 3 University of Yamanashi (Japan) 4 Hiroshima Institute of Technology (Japan) 5 Tohoku University (Japan) |
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| 14:40 -15:00 (20 min) | ||
| O-6. " | Alignment Control and Electrical Coupling of Si-based Quantum Dots", | |
| Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 15:00 - 15:20 Break (20 min) | ||
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Abstract |
[ Session VI ] | |
| 15:20 - 15:50 (30 min) | ||
| I-8. " | Si/O superlattice growth: structural insights and epitaxial process optimization", | |
| (Invited) M. Caymax 1, S. Jayachandran 1,2, A. Delabie 1,3, M. Heyns 1,2 1 imec (Belgium) 2 Department of Metallurgy and Materials Engineering, Catholic University of Leuven (Belgium) 3 Department of Chemistry, University of Leuven (Belgium) |
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| 15:50 - 16:10 (20 min) | ||
| O-7. " | Sn-assisted low temperature crystallization of polycrystalline Ge1-xSnx thin-films on insulating surfaces", | |
| Masashi Kurosawa 1, 2, Takashi Yamaha 1, Wakana Takeuchi 1, Noriyuki Taoka 1, Osamu Nakatsuka 1, Hiroshi Ikenoue 3, and Shigeaki Zaima 1 1 Nagoya University (Japan) 2 JSPS Research Fellow (Japan) 3 Kyushu University (Japan) |
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| 16:10 - 16:30 (20 min) | ||
| O-8. " | Enhancement of High-Ns Electron Mobility in Ge(111) n-MOSFETs by the Formation of Atomically Flat GeO2/Ge Interface", | |
| C. H. Lee 1, 2, T. Nishimura 1, 2, C. Lu 1, 2, W. F. Zhang 1, 2, K. Nagashio 1, 2, and A. Toriumi 1, 2 1 Department of Materials Engineering, The University of Tokyo (Japan) 2 JST-CREST (Japan) |
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| 16:30 - 16:50 (20 min) | ||
| O-9. " | Characterization of low-carrier thick n-GaN Schottky diodes on GaN free-standing substrates ", | |
| Kenji Shiojima 1, Yuhei Kihara 1, Toshichika Aoki 1, Naoki Kaneda 1, 2, and Tomoyoshi Mishima 2 1 Graduate School of Engineering, University of Fukui (Japan) 2 Cable Materials Research Lab., Hitachi Metals Ltd. (Japan) |
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| 16:50 - 17:00 Closing Remarks | ||
| 18:00
- 20:00 Banquet (Hotel Bel Air Sendai) |
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