Centennial Hall,
School of Medicine , Kyushu
University, Fukuoka, Japan
Technical Program |
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June 6 (Thursday) |
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09:10 - 09:15 | ||
C1-1. | Opening |
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Abstract |
[ Session C1 ] |
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09:15 - 09:45 (30 min) |
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C1-2. " | Oxidation of Germanium - What is different from Oxidation of Silicon ? -", | |
(Invited) Akira Toriumi, Univ. Tokyo (Japan) |
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09:45 - 10:15 (30 min) | ||
C1-3. " |
High Quality Ge Gate Stacks Technologies by Using Plasma Oxidation", | |
(Invited) Shinichi Takagi, Rui Zhang and Mitsuru Takenaka, Univ. Tokyo (Japan) |
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10:15 - 10:45 (30 min) | ||
C1-4. " |
Formation and Characterization of Hybrid Nanodots Floating Gate for Optoelectronic Devices", |
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(Invited) Seiichi Miyazaki 1), Katsunori Makihara 1) and Mitsuhisa Ikeda 2), 1) Nagoya Univ. (Japan), 2) Hiroshima Univ. (Japan) |
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10:45 - 11:15 (30 min) |
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C1-5. " | Comparing Photoluminescence Measurements with Theoretical Predictions for Transition Energies in Ge Quantum Dot Structures", | |
(Invited) Inga A. Fischer 1), Filipe Oliveira 1), Erlend Rolseth 1), Olaf Kirfel 1), Petru Tighineanu 2), Kurt Busch 3), Matthias Paul 1), Michael Jetter 1), Peter Michler 1), and Jorg Schulze 1), 1) Univ. Stuttgart (Germany), 2) Univ. Copenhagen (Denmark), 3) Humboldt-Universität zu Berlin, Institut für Physik, AG Theoretische Optik & Photonik, and Max-Born-Institut (Germany), |
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11:15 - 11:45 Break (30 min) | ||
Abstract ↓ |
[ Session C2 ] | |
11:45 - 12:15 (30 min) | ||
C2-1. " | High Quality Ge Grown on Si for Photonics Device Integration into BiCMOS", | |
(Invited) Y. Yamamoto 1), P. Zaumseil 1), S. Lischke 1), D. Knoll 1), L. Zimmermann 1), J. Murota 2) and B. Tillack 1,3), 1) IHP (Germany), 2) Tohoku Univ. (Japan), 3) TU. Berlin (Germany) |
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12:15 - 12:45 (30 min) | ||
C2-2. " | Atomically Controlled Processing of Group IV Semiconductors by CVD for Ultralarge Scale Integration", | |
(Invited) J. Murota 1), M. Sakuraba 1), B. Tillack 2,3), 1) Tohoku Univ. (Japan), 2) IHP (Germany), 3) TU Berlin (Germany) |
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12:45 - 14:15 Lunch Break (90 min) | ||
Abstract |
[ Session C3 ] |
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14:15 - 14:45 (30 min) | ||
C3-1. " | The effect of carbon on the magnetic properties of MnGe and Mn segregation", | |
(Invited)
V. Le Thanh, A. Spiesser, M.T. Dau, L.A. Michez, M. Petit, Aix-Marseille Univ. (France) |
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14:45 - 15:15 (30 min) | ||
C3-2. " | Dopant diffusion and activation in Excimer laser annealed Group IV semiconductors", | |
(Invited) S. Stefanov 1), F. Gontad 1), J.C. Conde 1), C. Serra 1), A. Benedetti 1), G.V. Luong 2), S. Wirths 2), U. Breuer 2), P. Alpuim 3), D. Buca 2), S. Chiussi 1), 1) Univ. Vigo (Spain), 2) Forschungszentrum Juelich (Germany), 3) Univ. Minho (Portugal) |
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15:15 - 15:30 (15 min) | ||
Abstract |
[ Session C4 ] | |
15:30 - 16:00 (30 min) | ||
C4-1. " |
Potential of GeSn and GeSiSn for Future Nanoelectronic Device Applications", | |
(Invited) Shigeaki Zaima 1), Osamu Nakatsuka 1), Noriyuki Taoka 1), Takanori Asano 1), Takashi Yamaha 1), Masashi Kurosawa 2), Mitsuo Sakashita 1), 1) Nagoya University (Japan), 2) JSPS Research Fellow (Japan) |
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16:00 - 16:30 (30 min) | ||
C4-2. " | Oxygen in Si Epitaxial Growth: from Interface Contamination to Si/O Superlattice Engineering", | |
(Invited) M. Caymax, S. Jayachandran, Lu Augustin, A. Delabie, R. Loo, A. Hikavyy, G. Pourtois, W. Vandervorst, M. Heyns, imec (Belgium) |
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16:30 - 16:50 (20 min) | ||
C4-3. " | MBE growth of tensile-strained and n-doped Ge/Si heterosctructures using decomposition of GaP", | |
(Invited) T.K.P. Luong 1), A. Ghrib 1), M.T. Dau 1), M.A. Zrir 1), V. Le Thanh 1), M. Petit 1), M. El Kurdi 2), P. Boucaud 2), J. Murota 3) 1) Aix-Marseille University (France), 2) University of Paris-Sud 11 (France), 3) Tohoku University (Japan) |
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16:50 - 16:55 Closing | ||