Link to "6th International WorkShop on
New Group IV Semiconductor Nanoelectronics"
  Link to "JSPS Core-to-Core Program : ICRC-ACP4ULSI"


6th International WorkShop on New Group IV Semiconductor Nanoelectronics
and
JSPS Core-to Core Program Joint Seminar
"Atomically Controlled Processing for Ultralarge Scale Integration"

February 22-23, 2013,
Conference Room, Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai, Japan

Co-sponsored by RIEC and JSPS Core-to-Core Program

 

   

Technical Program




     
 

February 22 (Friday)




     
  13:25 - 13:30
    Opening Remarks     Michio Niwano (RIEC, Tohoku Univ.)
   
     

Abstract

[ Session A ]

     
 

13:30 - 14:00 (30 min)

PDF

A-1. " Light Emitting Diodes Based on Ge Quantum Dots Embedded in Micro-Cavities",
    (Keynote)
Y. Shiraki, X. Xu and T Maruizumi,
Advanced Research Laboratories, Tokyo City University (Japan)
     
  14:00  -14:20 (20 min)

PDF

A-2. "

High-density Formation and Characterization of Nanodots for Their Electron Device Application",
    (Invited)
Katsunori Makihara and Seiichi Miyazaki,
Nagoya University (Japan)
     
  14:20 - 14:40 (20 min)
PDF A-3. "

Heteroepitaxial growth of 3C-SiC on Si and Graphene-on-Silicon technology",

    (Invited)
Maki Suemitsu and Hirokazu Fukidome,
RIEC, Tohoku University (Japan)
 
     
 

14:40 - 15:00 (20 min)

PDF A-4. " Characterization of Interfaces, Direct Growth and Patterning of Graphene Films on Sapphire Substrates",


(Invited)
T. Ogino, K. Saito, Y. Iida, T. Kase and K. Yamazaki,
Yokohama National University (Japan)




15:00 - 15:20 Break (20 min)






Abstract
[ Session B ]




15:20 - 15:50 (30 min)
PDF B-1. " Ge:Mn materials for spin injection into group-IV semiconductors: Overview and Perspectives",


(Keynote)
V. Le Thanh, M. T. Dau, A. Spiesser, T. G Le, L. A. Michez, M. Petit,
Aix-Marseille University, CINaM-CNRS (France)




15:50 - 16:10 (20 min)
PDF B-2. " Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator",


(Invited)
Taizoh Sadoh and Masanobu Miyao,
Department of Electronics, Kyushu University (Japan)




16:10 - 16:30 (20 min)
PDF B-3. " Laser-assisted Electron emission from nanocrystalline silicon based planar cathodes",


(Invited)
H. Shimawaki 1, Y. Neo 2, H. Mimura 2, F. Wakaya 3 and M. Takai 3,
1 Department of System and Information Engineering, Hachinohe Institute of Technology (Japan)
2 Research Institute of Electronics, Shizuoka University (Japan)
3 Center for Quantum Science and Technology under Extreme Conditions, Osaka University (Japan)




16:30 - 16:50 (20 min)
PDF B-4. " SiGe Processes and Devices Using Sputter Epitaxy Method",


(Invited)
Yoshiyuki Suda and Takahiro Tsukamoto,
Graduate School of Engineering, Tokyo University of Agriculture and Technology (Japan)



     
  18:00 - 20:00
    Banquet
     
     
 

February 23 (Saturday)




     

Abstract

[ Session C ]


   
  9:30 - 10:00 (30 min)
PDF C-1. " Silicon and oxygen CVD layer growth for 2D epitaxial Si/O nano-lattices",
    (Keynote)
Matty Caymax, Suseendran Jayachandren, Jens Maggen, Roger Loo, Johan Meersschaut, Annelies Delabie, Wilfried Vandervorst and Marc Heyns,
imec  (Belgium)
     
  10:00 - 10:20 (20 min)
PDF C-2. " Impact of Ultra-thin Insulator Insertion on Ge/Metal Interaction",
    (Invited)
T. Nishimura and A. Toriumi,
The University of Tokyo (Japan)
     
  10:20 - 10:40 (20 min)
PDF C-3. " High Mobility Ge MOSFETs using 0.7 nm EOT HfO2/Al2O3/GeOx/Ge Gate Stacks",
    (Invited)
S. Takagi, R. Zhang and M. Takenaka,
The University of Tokyo (Japan)
     
  10:40 - 11:00 (20 min)

PDF

C-4. "

Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits",
    (Invited)
N. Taoka 1, M. Kurosawa 1,2, K. Kato 1,2, S. Shibayama 1, M. Sakashita 1, O. Nakatsuka 1 and S. Zaima 1,
1 Nagoya University (Japan),
2
JSPS (Japan)






Abstract


[ Poster Session ]
     
  11:00 - 12:30 (90 min)

PDF

(1) "

Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn)",
    M. Kurosawa 1,2, N. Taoka 1, M. Sakashita 1, O. Nakatsuka 1, M. Miyao 3 and S. Zaima 1,
1 Nagoya University
(Japan)
2 JSPS (Japan)
3 Kyushu University (Japan)



PDF (2) " Control of Interfacial Reactions in Al2O3/Ge Structures",


S. Shibayama 1, K. Kato 1,2, M. Sakashita 1, W. Takeuchi 1, N. Taoka 1, O. Nakatsuka 1 and S. Zaima 1,
1 Nagoya University
(Japan)
2 JSPS (Japan)



PDF (3) " Crystalline Properties of Ge1-xSnx Epitaxial Layers on Ge(110)",


T. Asano 1, M. Kurosawa 1,2, N. Taoka 1, O. Nakatsuka 1 and S. Zaima 1,
1 Nagoya University
(Japan)
2 JSPS (Japan)



PDF (4) " Growth and Characterization of Ge1-x-ySixSny Epitaxial Layers for Solar Cell",


T. Yamaha, O. Nakatsuka, N. Taoka, W. Takeuchi and S. Zaima,
Nagoya University
(Japan)
    
PDF (5) " Crystalline and Electrical Properties of Ni germanium/Ge(110) Contacts",


O. Nakatsuka, J. Yokoi, Y.S. Deng, N. Taoka and S. Zaima,
Nagoya University
(Japan)



PDF (6) " Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices",


Seiichi Miyazaki 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Hideki Murakami 2,
1 Nagoya University
(Japan)
2 Hiroshima University (Japan)



PDF (7) " Electroluminescence Study of Self-aligned Si-based Quantum Dots",


Hiroki Takami 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1,
1 Nagoya University
(Japan)
2 Hiroshima University  (Japan)



PDF (8) " Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots",


Yoshihisa Suzuki 1, Katsunori Makihara 1, Hiroki Takami 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1,
1 Nagoya University
(Japan)
2 Hiroshima University (Japan)



PDF (9) " Spatially-controlled Charge Storage and Charge Dispersion in High Density Self-aligned Si-based Quantum Dots",


Naoki Tsunekawa 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1,
1 Nagoya University
(Japan)
2 Hiroshima University (Japan)



PDF (10) " High Density Formation and Characterization of CoPt Alloy Nanodots as Memory Nodes",


Ryo Fukuoka 1, Hai Zhang 1, Yuuki Kabeya 1, Katsunori Makihara 1, Akio Ohta 2 and Seiichi Miyazaki 1,
1 Nagoya University
(Japan)
2 Hiroshima University (Japan)



PDF (11) " Characterization of Resistive Switching of Si-rich Oxides",


Motoki Fukusima 1, Akio Ohta 2, Katsunori Makihara 1and Seiichi Miyazaki 1,
1 Nagoya University
(Japan)
2 Hiroshima University (Japan)



PDF (12) " Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy",


Daichi Takeuchi 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2, Seiichi Miyazaki 1, Hirokazu Kaki 3 and Tsukasa Hayashi 3,
1 Nagoya University
(Japan)
2 Hiroshima University (Japan)
3 Nissin Electric Co., Ltd. (Japan)



PDF (13) " Substrate-oxide-sensitive Ge TFT Characteristics",


S. Kabuyanagi, T. Nishimura, K. Nagashio and A. Toriumi,
The University of Tokyo
(Japan)



PDF (14) " Structural information from IR spectroscopy on SiNx:H deposited from SiH4-N2 gas mixture using VHF-PECVD",


Shin-ichi Kobayashi,
Department of Electronics and Mechatronics, Tokyo Polytechnic University
(Japan)



PDF (15) " Nitrogen Doping into Si Barriers and Modulation of Hole Tunneling Characteristics in Si1-xGex/Si Resonant Tunneling Diode",
    Tomoyuki Kawashima, Masao Sakuraba and Junichi Murota,
RIEC, Tohoku University
(Japan)
     
PDF (16) " Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH4-B2H6-H2 Gas Mixture without Substrate Heating",
    Yusuke Abe, Masao Sakuraba and Junichi Murota,
RIEC, Tohoku University
(Japan)
     
PDF (17) " Epitaxial Growth of Si1-xGex on Si(100) by ECR Ar Plasma CVD from SiH4-GeH4 Gas Mixture without Substrate Heating",
    Naofumi Ueno, Masao Sakuraba, Junichi Murota and Shigeo Sato,
RIEC, Tohoku University
(Japan)
     
PDF (18) " Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH4-B2H6-H2 Gas Mixture without Substrate Heating",
    Shuji Kubota, Masao Sakuraba, Junichi Murota and Shigeo Sato,
RIEC, Tohoku University
(Japan)
     
PDF (19) " Suppression of P diffusion in Ge by Si delta layer",
    Yuji Yamamoto 1, Peter Zaumseil 1, Rainer Kurps 1 Junichi Murota 2 and Bernd Tillack 1,3,
1 IHP
(Germany)
2 RIEC, Tohoku University (Japan)
3 Technische Universität Berlin (Germany)



PDF (20) " Tensile-strained and n-doped Ge epilayers grown on Si(001) by molecular-beam epitaxy",


T. K. P. Luong 1, M. T. Dau 1, A. Ghrib 2, M. A. Zrir 1, M. Petit 1, M. El Kurdi 2, P. Boucaud 2, V. Le Thanh 1, J. Murota 3,
1 CINaM  UMR-CNRS 7325, Université d’Aix-Marseille
(France)
2 Institut d'Electronique Fondamentale UMR-CNRS (France)
3 RIEC, Tohoku University (Japan)
     
PDF (21) " Initial stage of ohmic formation for Ti/Al contacts on GaN and AlGaN/GaN",
    K. Shiojima 1, H. Yokohama 2 and G. Araki 2,
1 University of Fukui
(Japan)
2 Optorans (Japan)
     
     
  12:30 - 13:30 Lunch
     
   

Abstract

[ Session D ]

     
  13:30 - 14:00 (30 min)
PDF D-1. " SiGe BiCMOS -Baseline Technology for MORE THAN MOORE Functional Diversification of Opto-and Microelectronic Devices and Circuits",


(Keynote)
B. Tillack 1,2, B. Heinemann
1, M. Kaynak 1, D. Knoll 1, H. Rücker 1, Y. Yamamoto 1 and L. Zimmermann 1,
1 IHP
(Germany)
2
Technische Universität Berlin (Germany)




14:00 - 14:20 (20 min)
PDF D-2. " Contact Formations for Schottky Source/Drain Ge-CMOS",


(Invited)
Hiroshi Nakashima, Keisuke Yamamoto and Dong Wang,
Kyushu University
(Japan)




14:20 - 14:40 (20 min)
PDF D-3. " Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors",


(Invited)
Masao Sakuraba and Junichi Murota,
RIEC, Tohoku University (Japan)




14:40 -15:00 (20 min)
PDF D-4. " Detail analysis of electrical characteristics of metal/low-Mg-doped p-GaN interfaces",


(Invited)
Kenji Shiojima,
University of Fukui
(Japan)
     




15:00 - 15:05 Closing Remarks



     

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