| Link to
"6th International WorkShop on New Group IV Semiconductor Nanoelectronics" |
Link to "JSPS Core-to-Core Program : ICRC-ACP4ULSI" |
February
22-23, 2013,
Conference Room, Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by RIEC and JSPS Core-to-Core Program
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Technical Program |
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February 22 (Friday) |
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| 13:25 - 13:30 | ||
| Opening
Remarks Michio Niwano (RIEC, Tohoku Univ.) |
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Abstract |
[ Session A ] |
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13:30 - 14:00 (30 min) |
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| A-1. " | Light Emitting Diodes Based on Ge Quantum Dots Embedded in Micro-Cavities", | |
| (Keynote) Y. Shiraki, X. Xu and T Maruizumi, Advanced Research Laboratories, Tokyo City University (Japan) |
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| 14:00 -14:20 (20 min) | ||
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A-2. " |
High-density Formation and Characterization of Nanodots for Their Electron Device Application", | |
| (Invited) Katsunori Makihara and Seiichi Miyazaki, Nagoya University (Japan) |
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| 14:20 - 14:40 (20 min) | ||
| A-3. " |
Heteroepitaxial growth of 3C-SiC on Si and Graphene-on-Silicon technology", |
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| (Invited) Maki Suemitsu and Hirokazu Fukidome, RIEC, Tohoku University (Japan) |
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14:40 - 15:00 (20 min) |
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| A-4. " | Characterization of Interfaces, Direct Growth and Patterning of Graphene Films on Sapphire Substrates", | |
| (Invited) T. Ogino, K. Saito, Y. Iida, T. Kase and K. Yamazaki, Yokohama National University (Japan) |
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| 15:00 - 15:20 Break (20 min) | ||
| Abstract ↓ |
[ Session B ] | |
| 15:20 - 15:50 (30 min) | ||
| B-1. " | Ge:Mn materials for spin injection into group-IV semiconductors: Overview and Perspectives", | |
| (Keynote) V. Le Thanh, M. T. Dau, A. Spiesser, T. G Le, L. A. Michez, M. Petit, Aix-Marseille University, CINaM-CNRS (France) |
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| 15:50 - 16:10 (20 min) | ||
| B-2. " | Recent Progress of Rapid-Melting-Growth for Laterally-Graded, Ge-Based Mixed-Crystals on Insurator", | |
| (Invited) Taizoh Sadoh and Masanobu Miyao, Department of Electronics, Kyushu University (Japan) |
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| 16:10 - 16:30 (20 min) | ||
| B-3. " | Laser-assisted Electron emission from nanocrystalline silicon based planar cathodes", | |
| (Invited) H. Shimawaki 1, Y. Neo 2, H. Mimura 2, F. Wakaya 3 and M. Takai 3, 1 Department of System and Information Engineering, Hachinohe Institute of Technology (Japan) 2 Research Institute of Electronics, Shizuoka University (Japan) 3 Center for Quantum Science and Technology under Extreme Conditions, Osaka University (Japan) |
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| 16:30 - 16:50 (20 min) | ||
| B-4. " | SiGe Processes and Devices Using Sputter Epitaxy Method", | |
| (Invited) Yoshiyuki Suda and Takahiro Tsukamoto, Graduate School of Engineering, Tokyo University of Agriculture and Technology (Japan) |
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| 18:00 - 20:00 | ||
| Banquet | ||
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February 23 (Saturday) |
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Abstract |
[ Session C ] |
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| 9:30 - 10:00 (30 min) | ||
| C-1. " | Silicon and oxygen CVD layer growth for 2D epitaxial Si/O nano-lattices", | |
| (Keynote)
Matty Caymax, Suseendran Jayachandren, Jens Maggen, Roger Loo, Johan Meersschaut, Annelies Delabie, Wilfried Vandervorst and Marc Heyns, imec (Belgium) |
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| 10:00 - 10:20 (20 min) | ||
| C-2. " | Impact of Ultra-thin Insulator Insertion on Ge/Metal Interaction", | |
| (Invited) T. Nishimura and A. Toriumi, The University of Tokyo (Japan) |
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| 10:20 - 10:40 (20 min) | ||
| C-3. " | High Mobility Ge MOSFETs using 0.7 nm EOT HfO2/Al2O3/GeOx/Ge Gate Stacks", | |
| (Invited) S. Takagi, R. Zhang and M. Takenaka, The University of Tokyo (Japan) |
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| 10:40 - 11:00 (20 min) | ||
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C-4. " |
Feasibility of Ge Device Fabrication by Low Temperature Processes on ULSI Circuits", | |
| (Invited) N. Taoka 1, M. Kurosawa 1,2, K. Kato 1,2, S. Shibayama 1, M. Sakashita 1, O. Nakatsuka 1 and S. Zaima 1, 1 Nagoya University (Japan), 2 JSPS (Japan) |
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Abstract |
[ Poster Session ] | |
| 11:00 - 12:30 (90 min) | ||
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(1) " |
Low temperature crystallization of group-IV semiconductors induced by eutectic metals (Al, Sn)", | |
| M.
Kurosawa 1,2, N. Taoka 1, M. Sakashita 1, O. Nakatsuka 1, M. Miyao 3 and S. Zaima 1, 1 Nagoya University (Japan) 2 JSPS (Japan) 3 Kyushu University (Japan) |
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| (2) " | Control of Interfacial Reactions in Al2O3/Ge Structures", | |
| S. Shibayama 1, K. Kato 1,2, M. Sakashita 1, W. Takeuchi 1, N. Taoka 1, O. Nakatsuka 1 and S. Zaima 1, 1 Nagoya University (Japan) 2 JSPS (Japan) |
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| (3) " | Crystalline Properties of Ge1-xSnx Epitaxial Layers on Ge(110)", | |
| T. Asano 1, M. Kurosawa 1,2, N. Taoka 1, O. Nakatsuka 1 and S. Zaima 1, 1 Nagoya University (Japan) 2 JSPS (Japan) |
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| (4) " | Growth and Characterization of Ge1-x-ySixSny Epitaxial Layers for Solar Cell", | |
| T. Yamaha, O. Nakatsuka, N. Taoka, W.
Takeuchi and S. Zaima, Nagoya University (Japan) |
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| (5) " | Crystalline and Electrical Properties of Ni germanium/Ge(110) Contacts", | |
| O. Nakatsuka, J. Yokoi, Y.S. Deng, N.
Taoka and S. Zaima, Nagoya University (Japan) |
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| (6) " | Electronic and Optoelectronic Response of Hybrid Nanodots Floating Gate MOS Devices", | |
| Seiichi Miyazaki 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Hideki Murakami 2, 1 Nagoya University (Japan) 2 Hiroshima University (Japan) |
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| (7) " | Electroluminescence Study of Self-aligned Si-based Quantum Dots", | |
| Hiroki Takami 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1, 1 Nagoya University (Japan) 2 Hiroshima University (Japan) |
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| (8) " | Transient Characteristics of Electroluminescence from Self-aligned Si-based Quantum Dots", | |
| Yoshihisa Suzuki 1, Katsunori Makihara 1, Hiroki Takami 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1, 1 Nagoya University (Japan) 2 Hiroshima University (Japan) |
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| (9) " | Spatially-controlled Charge Storage and Charge Dispersion in High Density Self-aligned Si-based Quantum Dots", | |
| Naoki Tsunekawa 1, Katsunori Makihara 1, Mitsuhisa Ikeda 2 and Seiichi Miyazaki 1, 1 Nagoya University (Japan) 2 Hiroshima University (Japan) |
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| (10) " | High Density Formation and Characterization of CoPt Alloy Nanodots as Memory Nodes", | |
| Ryo Fukuoka 1, Hai Zhang 1, Yuuki Kabeya 1, Katsunori Makihara 1, Akio Ohta 2 and Seiichi Miyazaki 1, 1 Nagoya University (Japan) 2 Hiroshima University (Japan) |
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| (11) " | Characterization of Resistive Switching of Si-rich Oxides", | |
| Motoki Fukusima 1, Akio Ohta 2, Katsunori Makihara 1and Seiichi Miyazaki 1, 1 Nagoya University (Japan) 2 Hiroshima University (Japan) |
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| (12) " | Characterization of Electron Emission from Si-Nanocrystals/Si-Nanocolumnar Structures by Conductive-Probe Atomic Force Microscopy", | |
| Daichi Takeuchi 1, Katsunori
Makihara
1, Mitsuhisa Ikeda 2, Seiichi Miyazaki 1, Hirokazu Kaki 3 and Tsukasa Hayashi 3, 1 Nagoya University (Japan) 2 Hiroshima University (Japan) 3 Nissin Electric Co., Ltd. (Japan) |
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| (13) " | Substrate-oxide-sensitive Ge TFT Characteristics", | |
| S. Kabuyanagi, T. Nishimura, K. Nagashio
and A. Toriumi, The University of Tokyo (Japan) |
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| (14) " | Structural information from IR spectroscopy on SiNx:H deposited from SiH4-N2 gas mixture using VHF-PECVD", | |
| Shin-ichi Kobayashi, Department of Electronics and Mechatronics, Tokyo Polytechnic University (Japan) |
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| (15) " | Nitrogen Doping into Si Barriers and Modulation of Hole Tunneling Characteristics in Si1-xGex/Si Resonant Tunneling Diode", | |
| Tomoyuki
Kawashima, Masao Sakuraba and Junichi Murota, RIEC, Tohoku University (Japan) |
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| (16) " | Epitaxial Growth of B-Doped Si on Si(100) by ECR Ar Plasma CVD from SiH4-B2H6-H2 Gas Mixture without Substrate Heating", | |
| Yusuke
Abe, Masao Sakuraba and Junichi Murota, RIEC, Tohoku University (Japan) |
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| (17) " | Epitaxial Growth of Si1-xGex on Si(100) by ECR Ar Plasma CVD from SiH4-GeH4 Gas Mixture without Substrate Heating", | |
| Naofumi
Ueno, Masao Sakuraba, Junichi Murota and Shigeo Sato, RIEC, Tohoku University (Japan) |
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| (18) " | Epitaxial Growth of B-Doped Ge on Si(100) by ECR Ar Plasma CVD from GeH4-B2H6-H2 Gas Mixture without Substrate Heating", | |
| Shuji
Kubota, Masao Sakuraba, Junichi Murota and Shigeo Sato, RIEC, Tohoku University (Japan) |
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| (19) " | Suppression of P diffusion in Ge by Si delta layer", | |
| Yuji
Yamamoto
1, Peter Zaumseil 1, Rainer Kurps 1 Junichi Murota 2 and Bernd Tillack 1,3, 1 IHP (Germany) 2 RIEC, Tohoku University (Japan) 3 Technische Universität Berlin (Germany) |
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| (20) " | Tensile-strained and n-doped Ge epilayers grown on Si(001) by molecular-beam epitaxy", | |
| T. K. P. Luong 1, M. T. Dau 1, A. Ghrib 2, M. A. Zrir 1, M. Petit 1, M. El Kurdi 2, P. Boucaud 2, V. Le Thanh 1, J. Murota 3, 1 CINaM UMR-CNRS 7325, Université d’Aix-Marseille (France) 2 Institut d'Electronique Fondamentale UMR-CNRS (France) 3 RIEC, Tohoku University (Japan) |
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| (21) " | Initial stage of ohmic formation for Ti/Al contacts on GaN and AlGaN/GaN", | |
| K. Shiojima 1, H. Yokohama 2 and G. Araki 2, 1 University of Fukui (Japan) 2 Optorans (Japan) |
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| 12:30 - 13:30 Lunch | ||
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Abstract |
[ Session D ] |
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| 13:30 - 14:00 (30 min) | ||
| D-1. " | SiGe BiCMOS -Baseline Technology for MORE THAN MOORE Functional Diversification of Opto-and Microelectronic Devices and Circuits", | |
| (Keynote) B. Tillack 1,2, B. Heinemann 1, M. Kaynak 1, D. Knoll 1, H. Rücker 1, Y. Yamamoto 1 and L. Zimmermann 1, 1 IHP (Germany) 2 Technische Universität Berlin (Germany) |
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| 14:00 - 14:20 (20 min) | ||
| D-2. " | Contact Formations for Schottky Source/Drain Ge-CMOS", | |
| (Invited) Hiroshi Nakashima, Keisuke Yamamoto and Dong Wang, Kyushu University (Japan) |
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| 14:20 - 14:40 (20 min) | ||
| D-3. " | Atomically Controlled Plasma CVD Processing for Quantum Heterointegration of Group IV Semiconductors", | |
| (Invited) Masao Sakuraba and Junichi Murota, RIEC, Tohoku University (Japan) |
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| 14:40 -15:00 (20 min) | ||
| D-4. " | Detail analysis of electrical characteristics of metal/low-Mg-doped p-GaN interfaces", | |
| (Invited) Kenji Shiojima, University of Fukui (Japan) |
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| 15:00 - 15:05 Closing Remarks | ||