December 6-7,
2018,
Conference Room
(4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Cooperative Research Project Program of the
Research Institute of Electrical Communication, Tohoku University
- Japan Society for the Promotion of
Science (JSPS): 154th Committee on Semiconductor Interfaces and Their
Applications in University-Industry Cooperative Research Committees
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Technical Program
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December
6 (Thursday), 2018 |
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| 10:00 - 10:10 | ||
| Introductory
Junichi Murota (Tohoku Univ.) |
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[ Session 1 : Invited Talks ] |
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10:10 - 10:40 (30 min) |
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| I-01. " | Formation and magnetic properties of self-assembled GeMn/Si quantum dots", | |
| (Invited) Son Tung Pham 1, Lisa Michez 1, Sylvain Bertaina 2, Thi Kim Phuong Luong 3 and Vinh Le Thanh 1 1 Aix-Marseille Université, CNRS CINaM-UMR 7325, France 2 Aix-Marseille Université, CNRS IM2NP-UMR 7334, France 3 Hong Duc University, Vietnam |
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| 10:40 - 11:10 (30 min) | ||
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I-02. " |
Impact of tensile strain in GeSn/SiGeSn structures for lasing", | |
| (Invited) Detlev Grützmacher 1, Denis Rainko 1, D. Buca 1, Nils von den Driesch 1, Daniela Stange 1, Z. Ikonic 2, J.M. Hartmann 3, Philippe Boucaud 4, Moustafa El Kurdi 4 1 Institute of Semiconductor Nanoelectronics, PGI-9, Forschungszentrum Jülich, Germany 2 Pollard Institute, School of Electronics and Electrical Engineering, University of Leeds, United Kingdom 3 Univ. Grenoble Alpes, CEA, LETI, France 4 Center for Nanoscience and Nanotechnologies, C2N UMR 9001 CNRS-Université Paris-Sud, Université Paris-Saclay, France |
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| 11:10 - 11:40 (30 min) | ||
| I-03. " |
GeSn-related group-IV semiconductor heterostructures for electronic and optoelectronic applications", |
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| (Invited) Osamu Nakatsuka 1,2, M. Fukuda 1, M. Kurosawa 1, M. Sakashita 1 and S. Zaima 3 1 Graduate School of Engineering, Nagoya University, Japan 2 Institute of Materials and Systems for Sustainability, Nagoya University, Japan 3 Institute of Innovation for Future Society, Nagoya University, Japan |
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| 11:40 - 12:50 Lunch | ||
| [ Session 2 : Invited & Regular Talks ] | ||
| 12:50 - 13:20 (30 min) | ||
| I-04. " | Photoemission Study of Gate Dielectrics - Quantitative Characterizations of Dielectric Functions, Interface Dipoles and Electronic Defect States", | |
| (Invited) Seiichi Miyazaki and Akio Ohta Graduate School of Engineering, Nagoya University, Japan |
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| 13:20 - 13:50 (30 min) | ||
| I-05. " | Low-Temperature Solid-Phase Crystallization of Sn-Doped Ge on Insulator for Advanced Thin-Film Devices", | |
| (Invited) Taizoh Sadoh, C. Xu and M. Miyao Department of Electronics, Kyushu University, Japan |
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| 13:50 - 14:20 (30 min) | ||
| I-06. " | Understanding of ferroelectric phase formation mechanism for un-doped ZrO2", | |
| (Invited) Shigehisa Shibayama 1, Tomonori Nishimura 1, Shinji Migita 2 and Akira Toriumi 1 1 Department of Materials Engineering, The University of Tokyo, Japan 2 National Institute of Advanced Industrial Science & Technology (AIST), Japan |
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| 14:20 - 14:40 (20 min) | ||
| O-01. " | Ar Plasma Irradiation Effect upon Electrical Activation of B Atoms Doped in Epitaxial Si Thin Film Grown by ECR Ar Plasma CVD", | |
| Wu Li,
Masao Sakuraba and Shigeo Sato Research Institute of Electrical Communication, Tohoku University, Japan |
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| 14:40 - 15:00 Break (20 min) | ||
| [ Session 3 : Invited & Regular Talks ] | ||
| 15:00 - 15:30 (30 min) | ||
| I-07. " | Alignment Control of Vertical / Body-Centered-Tetragonal SiGe Nanodot", | |
| (Invited) Yuji Yamamoto 1, Yuhki Itoh 2,3, Peter Zaumseil 1, Markus Andreas Schubert 1, Giovanni Capellini 1,4, Katsuyoshi Washio 2 and Bernd Tillack 1,5 1 IHP - Leibniz-Institut für innovative Mikroelektronik, Germany 2 Graduate School of Engineering, Tohoku University, Japan 3 JSPS Research Fellow, Japan 4 Dipartimento di Scienze, Università degli Studi Roma Tre, Italy 5 Technische Universität Berlin, Germany |
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| 15:30 - 16:00 (30 min) | ||
| I-08. " | Fabrication of Ge MOS Capacitor by Metal Yttrium Oxidation", | |
| (Invited) Keisuke Yamamoto 1, Kentaro Akiyama 1, Kento Iseri 1, Wei-Chen Wen 1, Dong Wang 1 and Hiroshi Nakashima 2 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Japan 2 Global Innovation Center, Kyushu University, Japan |
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| 16:00 - 16:30 (30 min) | ||
| I-09. " | Nanoengineering in thermoelectric material processing for microsystem applications", | |
| (Invited) Takahito Ono 1,2, Nguyen Huu Trung 1, Khairul Fadzli Bin Samat 1, Nguyen Van Toan 1 1 Graduate School of Engineering, Tohoku University, Japan 2 Micro System Integration Center (μSIC), Tohoku University, Japan |
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| 16:30 - 16:50 (20 min) | ||
| O-02. " | Border trap evaluation using deep-level transient spectroscopy for SiO2/GeO2/Ge gate stacks", | |
| Wei-Chen
Wen 1, Keisuke Yamamoto 1, Dong
Wang 1, Hiroshi Nakashima 2 1 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Japan 2 Global Innovation Center, Kyushu University, Japan |
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| 16:50 - 17:00 Group Photo | ||
| 18:00 - 19:30 Banquet (Restaurant HAGI (2F) at North Gate of Katahira Campus : "レストラン萩") |
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December
7 (Friday), 2018 |
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[ Session 4-1 : Short Talks for Poster ] |
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| 09:15 - 09:20 (5 min) | ||
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P-01. " |
Formation and Magnetic Characterization of High Density FePt Nanodots Induced by Remote H2 Plasma", | |
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Yasushi
Hashimoto, Katsunori Makihara, Akio Ohta and Seiichi
Miyazaki Graduate School of Engineering, Nagoya University, Japan |
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| 09:20 - 09:25 (5 min) | ||
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P-02. " |
Thermal solid-phase crystallization of amorphous ZnO/V-doped ZnO/ZnO stacked film on a-face sapphire substrate", | |
| Kenta Shito,
Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University, Japan |
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| 09:25 - 09:30 (5 min) | ||
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P-03. " |
Deposition of transparent conductive Al and V co-doped ZnO thin films by RF reactive sputtering at room temperature", | |
| Chisato Tateyama, Tomoyuki Kawashima and
Katsuyoshi Washio Graduate School of Engineering, Tohoku University, Japan |
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| 09:30 - 09:35 (5 min) | ||
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P-04. " |
Depth Profile of Carrier Concentration in In-Situ P-Doped Si Thin Films Epitaxially Grown by ECR Ar Plasma CVD without Substrate Heating", | |
| Nagafumi
Kato, Masao Sakuraba and Shigeo Sato Research Institute of Electrical Communication, Tohoku University, Japan |
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| 09:35 - 09:40 (5 min) | ||
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P-05. " |
Selective Growth of Si for the Formation of Si-QDs with Ge Core and Their Photoluminescence Properties", | |
| Shuntaro Fujimori, Ryo Nagai, Mitsuhisa
Ikeda, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
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| 09:40 - 09:45 (5 min) | ||
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P-06. " |
Characterization of Electron Field Emission from Multiple-Stacked Ge Core Si-QDs", | |
| Yuto Futamura,
Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi
Miyazaki Graduate School of Engineering, Nagoya University, Japan |
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| 09:45 - 09:50 (5 min) | ||
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P-07. " |
Strain Analysis on Vertically Stacked Ge Quantum Dots with Si or Si1-xCx Spacers", | |
| Yuhki Inoue,
Makoto Arita, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University, Japan |
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| 09:50 - 09:55 (5 min) | ||
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P-08. " |
Characterization of solid-phase crystallized CuCrO2 thin film via forming gas annealing", | |
| Kohtaroh Ohno, Tomoyuki Kawashima and
Katsuyoshi Washio Graduate School of Engineering, Tohoku University, Japan |
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| 09:55 - 10:00 (5 min) | ||
| P-09. " | Formation of p-CuCrO2/i-ZnO/n-ZnO heterostructure and its rectifying characteristics", | |
| Masahiro Sasaki, Tomoyuki Kawashima and
Katsuyoshi Washio Graduate School of Engineering, Tohoku University, Japan |
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| 10:00 - 10:05 (5 min) | ||
| P-10. " | Study of factors to limit increasing Sn content in Ge1-xSnx for MOCVD method", | |
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Yusuke Miki
1, Wakana Takeuchi 1,2, Shigehisa
Shibayama 1, Osamu Nakatsuka 1,3 and
Shigeaki Zaima 4 1 Graduate School of Engineering Nagoya University, Japan 2 Aichi Institute of Technology, Japan 3 Institute of Materials and Systems for Sustainability, Nagoya University, Japan 4 Institute of Innovation for Future Society, Nagoya University, Japan |
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| [ Session 4-2 : Poster Presentation ] | ||
| 10:15 - 11:30 Poster Presentation (P-01 ~ P-10, 75 min) | ||
| 11:30 - 12:50 Lunch | ||
| [ Session 5: Invited & Regular Talks ] | ||
| 12:50 - 13:20 (30 min) | ||
| I-10 " | Ultra-rapid Phase Transformation of Amorphous Germanium Thin-Films on Insulator Induced by Atmospheric Pressure Thermal Plasma Jet Irradiation", | |
| (Invited) Seiichiro Higashi Graduate School of Advanced Sciences of Matter, Hiroshima University, Japan |
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| 13:20 - 13:50 (30 min) | ||
| I-11. " | Energy Harvesting Application of Nitrogen-doped Graphene", | |
| (Invited) Takeru Okada, Golap Kalita, Masaki Tanemura, Ichiro Yamashita, Fumio Ohuchi, M Meyyappan and Seiji Samukawa Department of Electronic Engineering, Tohoku University, Japan |
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| 13:50 - 14:10 (20 min) | ||
| O-03. " | Formation of Nickel Stanogermanide/Heavily Doped n+-Ge1−xSnx Structure with Ultra-Low Contact Resistivity", | |
| Jihee
Jeon 1, Akihiro Suzuki 2,3,
Shigehisa Shibayama 1, Osamu Nakatsuka 1,4,
and Shigeaki Zaima 5 1 Department of Materials Physics, Graduate School of Engineering, Nagoya University, Japan 2 Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Japan 3 Research Fellow of Japan Society for the Promotion of Science, Japan 4 Institute of Materials and Systems for Sustainability, Nagoya University, Japan 5 Institute of Innovation for Future Society, Nagoya University, Japan |
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| 14:10 - 14:30 Closing Remarks | ||