February
23-24, 2018,
Conference Room
(4th Floor),
Laboratory for Nanoelectronics and Spintronics,
Research Institute of Electrical Communication (RIEC), Tohoku
University, Sendai, Japan
Co-sponsored
by
- Cooperative Research Project
Program of the Research Institute of Electrical Communication, Tohoku
University
-
Japan Society for the
Promotion of Science (JSPS): 154th Committee on Semiconductor
Interfaces and Their Applications in University-Industry Cooperative
Research Committees
|
Technical
Program
|
||
|
February
23 (Friday), 2018 |
||
| 09:40 - 09:50 | ||
| Introductory Junichi Murota
(Tohoku Univ.) |
||
|
[ Session 1 : Invited Talks ] |
||
|
09:50 - 10:20 (30 min) |
||
| I-01. " | Si-Ge-Sn-based heterostructures for integratable light emitters", | |
| (Invited) Nils von den Driesch 1,2, Daniela Stange 1, Denis Rainko 1, Ivan Povstugar 3, Jean-Michel Hartmann 4, Giovanni Capellini 5, Siegfried Mantl 1, Dan Buca 1, Detlev Grützmacher 1 1 Peter Grünberg Institute 9 (PGI 9) and JARA – FIT, Forschungszentrum Jülich (Germany) 2 JARA-Institute Green IT, RWTH Aachen (Germany) 3 Central Institute for Engineering, Electronics and Analytics, Forschungszentrum Jülich (Germany) 4 CEA, LETI, MINATEC Campus, Grenoble (France) 5 IHP (Germany) |
||
| 10:20 - 10:50 (30 min) | ||
|
I-02. " |
Fermi-level pinning at metal/SiGe interface", | |
| (Invited) Xuan Luo, Tomonori Nishimura and Akira Toriumi Department of Materials Engineering, The University of Tokyo (Japan) |
||
| 10:50 - 11:20 (30 min) | ||
| I-03. " |
Heterostructure Engineering of GeSn and SiGeSn Group-IV Alloy Semiconductor Layers", |
|
| (Invited) Osamu Nakatsuka 1,2, Masashi Kurosawa 1, Wakana Takeuchi 1, Mitsuo Sakashita 1 and Shigeaki Zaima 2 1 Graduate School of Engineering, Nagoya University (Japan) 2 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
||
|
11:20 - 11:50 (30 min) |
||
| I-04. " | Micro/Nanoelectromechanical Resonant Resonators for Sensing Applications", | |
| (Invited) Takahito Ono 1,2, Masaya Toda 1, Naoki Inomata 1 and Nguyen Van Toan 1 1 Graduate School of Engineering, Tohoku University (Japan) 2 Micro System Integration Center (μSIC), Tohoku University (Japan) |
||
| 11:50 - 13:00 Lunch | ||
| [ Session 2 : Invited Talks ] | ||
| 13:00 - 13:30 (30 min) | ||
| I-05. " | Body-centered tetragonal SiGe nanodot fabrication by RPCVD", | |
| (Invited) Yuji Yamamoto 1, Peter Zaumseil 1, Giovanni Capellini 1,2, Anne Hesse 1, Marco Albani 3, Francesco Montalenti 3, Thomas Schroeder 1,4 and Bernd Tillack 1,5 1 IHP (Germany) 2 Dipartimento di Scienze, Universita degli Studi Roma Tre (Italy) 3 Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano-Bicocca (Italy) 4 BTU Cottbus-Senftenberg (Germany) 5 Technische Universitat Berlin (Germany) |
||
| 13:30 - 14:00 (30 min) | ||
| I-06. " | Near-interface border-traps characterization by deep-level transient spectroscopy for GeO2/Ge gate stacks", |
|
| (Invited) Hiroshi Nakashima 1, Wei-Chen Wen 2, Keisuke Yamamoto 2 and Dong Wang 2 1 Global Innovation Center, Kyushu University (Japan) 2 Interdisciplinary Graduate School of Engineering Sciences, Kyushu University (Japan) |
||
| 14:00 - 14:30 (30 min) | ||
| I-07. " | Crystallization of Group IV Semiconductor Thin-Films by Atmospheric Pressure Thermal Plasma Jet", | |
| (Invited) Seiichiro Higashi Graduate School of Advanced Sciences of Matter, Hiroshima University (Japan) |
||
| 14:30 - 14:50 Break (20 min) | ||
| [ Session 3 : Invited Talks ] | ||
| 14:50 - 15:20 (30 min) | ||
| I-08. " | Epitaxial Growth Schemes for Fin and Gate-All-Around Devices", | |
| (Invited) Roger Loo 1, Andriy Hikavyy 1, Erik Rosseel 1, Clement Porret 1, Anurag Vohra 1,2, David Kohen 3,4, Joe Margetis 4, John Tolle 4 and Robert Langer 1 1 Imec (Belgium) 2 Instituut voor Kern- en Stralingsfysica, KU Leuven (Belgium) 3 ASM (Belgium) 4 ASM (USA) |
||
| 15:20 - 15:50 (30 min) | ||
| I-09. " | Luminescence Studies of Multiply Stacked Si Quantum Dots with Ge Core", | |
| (Invited) Katsunori Makihara, Mitsuhisa Ikeda and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
||
| 15:50 - 16:20 (30 min) | ||
| I-10. " | Low-Temperature Crystallization of Group IV Semiconductors on Insulator Using Catalysis", | |
| (Invited) Taizoh Sadoh 1, M. Miyao 1 and I. Tsunoda 2 1 Department of Electronics, Kyushu University (Japan) 2 National Institute of Technology, Kumamoto College (Japan) |
||
| 18:00
- 19:30
Banquet (Restaurant HAGI (2F) at North Gate of Katahira Campus : "レストラン萩") |
||
|
February
24 (Saturday), 2018 |
||
|
[ Session 4-1 : Short Talks for Poster ] |
||
| 09:00 - 09:05 (5 min) | ||
|
P-01. " |
Self-organization of thermoelectric Si1-xGex (0 ≤ x ≤ 1) thin films on insulators using Al-induced layer exchange", | |
| Kinta Kusano 1, A. Yamamoto 2, T. Suemasu 1 and K. Toko 1,3 1 Univ. of Tsukuba (Japan) 2 AIST (Japan) 3 JST PRESTO (Japan) |
||
| 09:05 - 09:10 (5 min) | ||
|
P-02. " |
Reduction of carrier scattering factors in solid-phase crystallized Ge on an insulator leading to high hole mobility (450 cm2/Vs)", | |
| Ryota Yoshimine, K. Moto, T. Suemasu and K. Toko Institute of Applied Physics, Univ. of Tsukuba (Japan) |
||
| 09:10 - 09:15 (5 min) | ||
|
P-03. " |
Composition-dependent electrical properties of solid-phase crystallized SiGe thin film on insulator", | |
| Daichi Takahara, R. Yoshimine, T. Suemasu, and K. Toko Institute of Applied Physics, Univ. of Tsukuba (Japan) |
||
| 09:15 - 09:20 (5 min) | ||
|
P-04. " |
Low-Temperature Formation of n-Type Ge on Insulator by Sb-Induced Layer Exchange Crystallization", | |
| Hongmiao Gao, Masanobu Miyao and Taizoh Sadoh Department of Electronics, Kyushu University (Japan) |
||
| 09:20 - 09:25 (5 min) | ||
|
P-05. " |
Electroluminescence from Si-QDs with Ge Core", | |
| Ryo Nagai, Kentaro Yamada, Shuntaro Fujimori, Mitsuhisa Ikeda, Akio Ohta, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
||
| 09:25 - 09:30 (5 min) | ||
|
P-06. " |
Insights into Growth of Two-Dimensional Ge Crystal on Epitaxial Ag/Ge(111) by Thermal Annealing", | |
| Koichi Ito 1, A. Ohta 1,2, M. Kurosawa 1,2, M. Araidai 1,2,3, M. Ikeda 1, K. Makihara 1, S. Miyazaki 1 1 Graduate School of Engineering, Nagoya University (Japan) 2 Institute for Advanced Research, Nagoya University (Japan) 3 Institute of Materials and Systems for Sustainability, Nagoya University (Japan) |
||
| 09:30 - 09:35 (5 min) | ||
|
P-07. " |
XPS Study on High-k/SiO2 Interface -Correlation between Electrical Dipole and Oxygen Density -", | |
| Nobuyuki Fujimura, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
||
| 09:35 - 09:40 (5 min) | ||
|
P-08. " |
Evaluation of Potential Distribution in Multiply-Stacked Si Quantum Dots Structure by Hard X-ray Photoelectron Spectroscopy", | |
| Yuto Futamura, Yuta Nakashima, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda and Seiichi Miyazaki Graduate School of Engineering, Nagoya University (Japan) |
||
| 09:40 - 09:45 (5 min) | ||
| P-09. " | Low-Temperature Chemical Vapor Deposition of SiC Thin Film Using Vinylsilane for Metal Surface Coating", | |
| Takuma Doi 1, Wakana Takeuchi 1, Yong Jin 2, Hiroshi Kokubun 2, Shigeo Yasuhara 2, Osamu Nakatsuka 1,3 and Shigeaki Zaima 3 1 Graduate School of Engineering, Nagoya University (Japan) 2 Japan Advanced Chemicals Ltd. (Japan) 3 IMaSS, Nagoya University (Japan) |
||
| 09:45 - 09:50 (5 min) | ||
| P-10. " | Oxidation-induced strained Ge precipitation on SiGe", | |
| Yusuke Noma, W. Song, T. Nishimura, T. Yajima and A. Toriumi Department of Materials Engineering, The University of Tokyo (Japan) |
||
| 09:50 - 09:55 (5 min) | ||
| P-11. " | Formation of multi-stacked Ge quantum dot structure via carbon-mediated solid-phase epitaxy", | |
| Kaito Takeshima 1, Yuhki Itoh 1,2,3, Tomoyuki Kawashima 1 and Katsuyoshi Washio 1 1 Graduate School of Engineering, Tohoku University (Japan) 2 Division for International Advanced Research and Education, Tohoku University (Japan) 3 Japan Society for the Promotion of Science Research Fellow for Young Scientists |
||
| 09:55 - 10:00 (5 min) | ||
| P-12. " | Effects of introducing V and N co-doped ZnO buffer layer on ZnO thin film growth on c-face sapphire substrate", | |
| Tomohiro Kanematsu, Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
||
| 10:00 - 10:05 (5 min) | ||
| P-13. " | Growth of ZnO on CuCrO2 thin films fabricated by solid-phase crystallization", | |
| Hiroshi Chiba 1,2, Masahiro Sasaki 3, Tomoyuki Kawashima 1 and Katsuyoshi Washio 1 1 Graduate School of Engineering, Tohoku University (Japan) 2 Research Fellow of Japan Society for the Promotion of Science 3 Tohoku University (Japan) |
||
| 10:05 - 10:10 (5 min) | ||
| P-14. " | Influence of Crystallinity Improvement in B-Doped Si upon Si-Ge p+-n Junctions Formed by ECR Ar Plasma CVD", | |
| Wu Li, Nagafumi Kato, Masao Sakuraba, Hisanao Akima and Shigeo Sato Research Institute of Electrical Communication, Tohoku Univ. (Japan) |
||
| 10:10 - 10:15 (5 min) | ||
| P-15. " | Epitaxial Growth of In-Situ P-Doped Si Films by ECR Ar Plasma CVD without Substrate Heating", | |
| Nagafumi Kato, Wu Li, Masao Sakuraba, Hisanao Akima and Shigeo Sato Research Institute of Electrical Communication, Tohoku Univ. (Japan) |
||
| [ Session 4-2 : Poster Presentation ] | ||
| 10:15 - 11:30 Poster Presentation (P-01 ~ P-15, 75 min) | ||
| 11:30 - 12:30 Lunch | ||
| 12:30 - 12:40 Group Photo | ||
| [ Session 5: Invited Talks ] | ||
| 12:40 - 13:10 (30 min) | ||
| I-11 " | Extremely-Thin Body GOI structures and MOSFETs", | |
| (Invited) Shinichi Takagi, Wu-Kang Kim, Kwangwon Jo, Xiao Yu and Mitsuru Takenaka The University of Tokyo (Japan) |
||
| 13:10 - 13:40 (30 min) | ||
| I-12. " | Formation and properties of luminescent oxide films on SiO2", | |
| (Invited) Tomoyuki Kawashima and Katsuyoshi Washio Graduate School of Engineering, Tohoku University (Japan) |
||
| 13:40 - 14:10 (30 min) | ||
| I-13. " | Insulator/GaN Interface Control for Intelligent Power Integrated Circuit", | |
| (Invited) Noriyuki Taoka 1, T. Kobayashi 2, M. Nakamura 2, T. Sagawa 2, N. X. Truyen 1,3, A. Ohta 3, H. Yamada 1, T. Takahashi 1, M. Ikeda 3, K. Makihara 3, T. Kubo 4, T. Yamada 1, T. Egawa 4, S. Miyazaki 3, S. Motoyama 2 and M. Shimizu 1 1 GaN-OIL, National Institute of Advanced Industrial Science and Technology, Akasaki Institute 4F(Japan) 2 Samco Inc. (Japan) 3 Nagoya University (Japan) 4 Nagoya Institute of Technology (Japan) |
||
| 14:10 - 14:40 (30 min) | ||
| I-14. " | Epitaxy and In-Situ Doping of Group-IV Semiconductors by Low-Energy Plasma CVD for Nanoelectronics", | |
| (Invited) Masao Sakuraba, Hisanao Akima and Shigeo Sato Research Institute of Electrical Communication, Tohoku University (Japan) |
||
| 14:40 - 14:50 Closing Remarks | ||